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    Peeling method
    1.
    发明申请
    Peeling method 有权
    剥皮方法

    公开(公告)号：US20040087110A1

    公开(公告)日：2004-05-06

    申请号：US10619074

    申请日：2003-07-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

    IPC: H01L021/46 ,  H01L021/30

    CPC classification number: H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

    Abstract: A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410null C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

    Abstract translation: 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

    Electro-optical device
    2.
    发明申请
    Electro-optical device 有权
    电光装置

    公开(公告)号：US20010040655A1

    公开(公告)日：2001-11-15

    申请号：US09835693

    申请日：2001-04-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Yuugo Goto

    IPC: G02F001/1333

    CPC classification number: G02F1/133514 ,  G02F1/133512

    Abstract: In a conventional liquid crystal display panel using a metallic film as a light shielding mask of a color filter, there arose a problem in that a parasitic capacitor with the other wiring is generated to often cause a delay in signal. Further, there arose a problem in that, if an organic film containing a black pigment is used as the light shielding film of the color filter, the manufacturing step thereof increases. In the present invention, lamination films of colored layers consisting of two layers (lamination film of a red-colored layer and a blue-colored layer, or lamination film of a red-colored layer and a green-colored layer) are formed on an opposing substrate as light shielding portions so as to overlap with TFTs on a device substrate without forming a light-shielding mask (black matrix).

    Abstract translation: 在使用金属膜作为滤色器的遮光掩模的常规液晶显示面板中，存在产生其它布线的寄生电容器经常引起信号延迟的问题。 此外，存在如下问题：如果使用含有黑色颜料的有机膜作为滤色器的遮光膜，则其制造步骤增加。 在本发明中，形成由两层（红色层和蓝色层的层叠膜，红色层和绿色层的层叠膜）构成的着色层的层压膜 相对的基板作为遮光部分，以便在不形成遮光掩模（黑矩阵）的情况下与设备基板上的TFT重叠。

    Separating method
    4.
    发明申请
    Separating method 有权
    分离方法

    公开(公告)号：US20040132265A1

    公开(公告)日：2004-07-08

    申请号：US10740437

    申请日：2003-12-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junya Maruyama ,  Yumiko Ohno ,  Toru Takayama ,  Yuugo Goto ,  Shunpei Yamazaki

    IPC: H01L021/46 ,  H01L021/30

    CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2924/3025

    Abstract: The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split.

    Abstract translation: 本发明是用于容易地分离大面积的全层释放层的分离方法。 此外，本发明是在形成剥离层期间不受使用诸如基板的基板的限制的分离方法。 一种分离方法，包括依次形成含有氢的金属膜，第一氧化物和半导体膜的步骤; 以及将载体接合到包含第一氧化物和半导体膜的剥离层，并且通过物理手段从与设置有金属层的基板分离结合到载体的剥离层。 通过分离方法，进行热处理以扩散半导体膜中所含的氢，通过还原在金属膜和第一氧化物膜之间的表面边界处形成的第二氧化物和包含第二氧化物的膜形成第三氧化物 氧化物和第三氧化物，含有第二氧化物的膜和第三氧化物的膜与金属膜之间的表面边界或含有第二氧化物的膜和第三氧化物之间的表面边界以及第一氧化物被分裂。

    Method of transferring a laminate and method of manufacturig a semiconductor device
    6.
    发明申请
    Method of transferring a laminate and method of manufacturig a semiconductor device 有权
    转印层压体的方法和制造半导体器件的方法

    公开(公告)号：US20030217805A1

    公开(公告)日：2003-11-27

    申请号：US10438854

    申请日：2003-05-16

    Applicant: Semiconductor Energy Laboratory Co. , Ltd.

    Inventor： Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    IPC: B32B031/00

    CPC classification number: H01L21/76251 ,  H01L21/2007 ,  H01L2221/68368 ,  Y10T428/14

    Abstract: An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer and an object to be peeled on a substrate; bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.

    Abstract translation: 本发明的目的是提供一种在短时间内将被剥离物转印到转印部件上而不会对层压体内被剥离对象造成损伤的方法。 另外，本发明的另一个目的是提供一种半导体器件的制造方法，其中将制造在衬底上的半导体元件转移到通常为塑料衬底的转印构件上。 该方法的特征在于包括：在基板上形成剥离层和待剥离物体; 通过双面胶带粘合要剥离的物体和支撑体; 通过使用物理方法剥离剥离层的物体，然后将被剥离物接合到转印体上; 并将支撑体和双面胶带从要剥离的物体上剥离。

    Semiconductor device, method of manufacturing the same, and method of designing the same
    9.
    发明申请
    Semiconductor device, method of manufacturing the same, and method of designing the same 失效

    公开(公告)号：US20030183854A1

    公开(公告)日：2003-10-02

    申请号：US10395310

    申请日：2003-03-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    IPC: H01L029/04

    CPC classification number: H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

    Abstract: An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

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