High-frequency semiconductor device and mounted structure thereof
    1.
    发明授权
    High-frequency semiconductor device and mounted structure thereof 失效
    高频半导体器件及其安装结构

    公开(公告)号:US5952709A

    公开(公告)日:1999-09-14

    申请号:US884223

    申请日:1997-06-27

    摘要: A high-frequency semiconductor device contains a semiconductor element in a cavity formed by a dielectric board and a cap. A first high-frequency transmission line connected to the semiconductor element is formed on the surface of said dielectric board in said cavity and a second high-frequency transmission line is formed on the bottom surface of said dielectric board, so that said first high-frequency transmission line and said second high-frequency transmission line are electromagnetically coupled together. In this semiconductor devise in which the first transmission line and the second transmission line are electromagnetically coupled together, the transmission lines need not be passed over the side wall of the cap, and neigther reflection loss or radiation loss takes place on the side wall. Besides, transmission loss of high-frequency signals is caused by neigther through-holes or via-holes, and is effectively suppressed.

    摘要翻译: 高频半导体器件在由电介质板和盖形成的空腔中包含半导体元件。 连接到半导体元件的第一高频传输线形成在所述空腔中的所述电介质板的表面上,并且在所述电介质板的底表面上形成第二高频传输线,使得所述第一高频 传输线和所述第二高频传输线电磁耦合在一起。 在第一传输线和第二传输线电磁耦合在一起的半导体装置中,传输线不需要通过盖的侧壁,并且在侧壁上发生相互反射损失或辐射损失。 此外,高频信号的传输损耗由相邻的通孔或通孔引起,并被有效地抑制。

    Slot antenna
    3.
    发明授权
    Slot antenna 有权
    插槽天线

    公开(公告)号:US06188368B1

    公开(公告)日:2001-02-13

    申请号:US09258830

    申请日:1999-02-26

    IPC分类号: H01Q1300

    摘要: A slot antenna comprising a dielectric substrate, a high-frequency signal transmission line formed on one surface of said dielectric substrate and having an open end, and a ground layer formed on the other surface of said dielectric substrate, said ground layer having a slot at a position opposed to the open end of said transmission line, wherein a dielectric plate for impedance matching is laminated on the surface of said ground layer on the side where said slot is formed so as to cover said slot. The slot antenna not only features a high antenna efficiency but also can be easily and cheaply produced by a layer-laminating method which is a generally employed technology for producing multi-layer wiring substrates. Besides, the slot antenna has a very simple structure which is small in size and is light in weight, and can be very well adapted to the systems that require these characteristics.

    摘要翻译: 一种缝隙天线,包括电介质基片,形成在所述电介质基片的一个表面上并具有开口端的高频信号传输线,以及形成在所述电介质基底的另一个表面上的接地层,所述接地层在 与所述传输线的开口端相对的位置,其中用于阻抗匹配的电介质板层叠在所述接地层的形成所述槽的一侧的表面上以覆盖所述槽。 缝隙天线不仅具有高的天线效率,而且可以通过层叠方法容易且廉价地制造,层叠方法是通常用于制造多层布线基板的技术。 此外,缝隙天线具有体积小且重量轻的非常简单的结构,并且可以非常适合于需要这些特性的系统。

    High-frequency module using slot coupling
    7.
    发明授权
    High-frequency module using slot coupling 失效
    高频模块采用槽耦合

    公开(公告)号:US06483406B1

    公开(公告)日:2002-11-19

    申请号:US09363619

    申请日:1999-07-29

    IPC分类号: H01L2312

    摘要: A high-frequency module comprising a high-frequency device-mounting package and an external circuit board, wherein said high-frequency device-mounting package includes a dielectric substrate having a first grounding layer contained therein, said dielectric substrate mounting a high-frequency device on one surface thereof and having, formed on one surface thereof, first high-frequency signal transmission lines connected to said high-frequency device, and having, formed on the other surface thereof, second high-frequency signal transmission lines coupled to said first high-frequency signal transmission lines; said external circuit board is constituted by a dielectric board having third high-frequency signal transmission lines and a second grounding layer, said third high-frequency signal transmission lines being formed on one surface of said dielectric board, and said second grounding layer being formed on the other surface of said dielectric board or inside thereof; and said high-frequency device-mounting package and said external circuit board are arranged side by side, and the second high-frequency signal transmission lines of the high-frequency package are electrically connected to the third high-frequency signal transmission lines of the external circuit board through linear electrically conducting members. The patterns of the second high-frequency signal transmission lines on the side of the high-frequency device-mounting package can be easily aligned with the patterns of the third high-frequency signal transmission lines on the side of the external circuit board, effectively reducing the transmission loss at the junction portions of the lines.

    摘要翻译: 一种包括高频器件安装封装和外部电路板的高频模块,其中所述高频器件安装封装包括其中包含第一接地层的电介质衬底,所述介质衬底安装高频器件 在其一个表面上,在其一个表面上形成有连接到所述高频装置的第一高频信号传输线,并且在其另一个表面上形成有与所述第一高频耦合的第二高频信号传输线 频率信号传输线路; 所述外部电路板由具有第三高频信号传输线和第二接地层的电介质板构成,所述第三高频信号传输线形成在所述电介质板的一个表面上,所述第二接地层形成在 所述电介质板的另一个表面或其内部; 并且所述高频器件安装封装和所述外部电路板并排布置,并且所述高频封装的第二高频信号传输线与外部的第三高频信号传输线电连接 电路板通过线性导电构件。 高频器件安装封装侧的第二高频信号传输线的图案可以容易地与外部电路板侧的第三高频信号传输线的图案对准,有效地减少 在线路的接合部分的传输损耗。

    Copper oxide superconductor, a process for its production, and a copper
used therein
    10.
    发明授权
    Copper oxide superconductor, a process for its production, and a copper used therein 失效
    氧化铜超导体,其生产方法和其中使用的铜

    公开(公告)号:US5563117A

    公开(公告)日:1996-10-08

    申请号:US357100

    申请日:1994-12-15

    摘要: In the production of a 124-type or 123-type superconductor by a sol-gel method using alkoxides of respective metals, the use of a compound wherein a secbutoxy group and a hydroxy group are coordinated with a copper atom gives a superconductor composed of flat particles having a broad C plane. The dimensional ratio defined by l/d is at least 6.7 in the case of the 124-type or is at least 8.4 in the case of the 123-type. It shows a superconducting property at a liquid nitrogen temperature. This superconductor shows a higher critical current density than one obtained by a sintering method.

    摘要翻译: 在通过使用各种金属的醇盐的溶胶 - 凝胶法制备124型或123型超导体时,使用其中二丁氧基和羟基与铜原子配位的化合物,得到由平面构成的超导体 具有宽C平面的颗粒。 在124型的情况下,由l / d定义的尺寸比例至少为6.7,在123型的情况下为至少8.4。 它在液氮温度下显示超导特性。 该超导体显示比通过烧结方法获得的密度高的临界电流密度。