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公开(公告)号:US09922854B2
公开(公告)日:2018-03-20
申请号:US13098253
申请日:2011-04-29
申请人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号: C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01J37/32 , H01L21/67 , H01L21/677
CPC分类号: H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
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公开(公告)号:US09324597B2
公开(公告)日:2016-04-26
申请号:US13098255
申请日:2011-04-29
申请人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号: H01J37/32 , H01L21/67 , C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01L21/677
CPC分类号: H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译: 本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。 多个基板设置在处理室内的处理源的相对侧上,但处理环境彼此不隔离。 处理源是水平居中的垂直等离子体发生器,其允许在等离子体发生器的任一侧上同时处理多个基板,但彼此独立。 该系统被布置为双系统,由此两个相同的处理线各自具有它们自己的处理室,彼此相邻布置。 多个机器人用于从处理系统装载和卸载基板。 每个机器人可以访问系统内的两条处理线。
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公开(公告)号:US20120031335A1
公开(公告)日:2012-02-09
申请号:US13098255
申请日:2011-04-29
申请人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号: C23C16/511 , C23C16/458 , C23C16/455
CPC分类号: H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译: 本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。 多个基板设置在处理室内的处理源的相对侧上,但处理环境彼此不隔离。 处理源是水平居中的垂直等离子体发生器,其允许在等离子体发生器的任一侧上同时处理多个基板,但彼此独立。 该系统被布置为双系统,由此两个相同的处理线各自具有它们自己的处理室,彼此相邻布置。 多个机器人用于从处理系统装载和卸载基板。 每个机器人可以访问系统内的两条处理线。
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公开(公告)号:US20120031333A1
公开(公告)日:2012-02-09
申请号:US13098253
申请日:2011-04-29
申请人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人: Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号: H01L21/677 , C23C16/511 , B25J9/00 , C23C16/44
CPC分类号: H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要: The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
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5.
公开(公告)号:US08906813B2
公开(公告)日:2014-12-09
申请号:US13886175
申请日:2013-05-02
申请人: Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
发明人: Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
IPC分类号: H01L21/31 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/511 , C23C16/54
CPC分类号: H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要: Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译: 本文描述了用于处理衬底的方法。 方法可以包括将基底定位在处理室中,将处理室保持在低于400℃的温度,使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室,施加微波功率 以从反应气体中产生微波等离子体,以及在衬底的暴露表面的至少一部分上沉积氧化硅层。
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6.
公开(公告)号:US09397380B2
公开(公告)日:2016-07-19
申请号:US13360652
申请日:2012-01-27
申请人: Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
发明人: Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
CPC分类号: H01P3/16 , H01J37/32229 , H01L21/02 , H01L21/02104 , H05H1/46 , H05H2001/4622
摘要: A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.
摘要翻译: 导波装置,其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成,并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部,并且包括在两个纵向端部之间纵向延伸的第一,第二,第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧,并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中,可以向波导介质的一个或两个纵向端提供电力,由此可以通过波导电介质的暴露侧将功率耦合到等离子体。
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公开(公告)号:US09068262B2
公开(公告)日:2015-06-30
申请号:US13110184
申请日:2011-05-18
申请人: Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
发明人: Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
IPC分类号: C23C16/455 , C23C16/509 , H01J37/32
CPC分类号: B05B1/185 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32651 , Y10T137/6851
摘要: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
摘要翻译: 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件,所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中,喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中,绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场,从而减少电弧电势。
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8.
公开(公告)号:US20130126331A1
公开(公告)日:2013-05-23
申请号:US13360652
申请日:2012-01-27
申请人: Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
发明人: Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
CPC分类号: H01P3/16 , H01J37/32229 , H01L21/02 , H01L21/02104 , H05H1/46 , H05H2001/4622
摘要: A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.
摘要翻译: 导波装置,其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成,并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部,并且包括在两个纵向端部之间纵向延伸的第一,第二,第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧,并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中,可以向波导介质的一个或两个纵向端提供电力,由此可以通过波导电介质的暴露侧将功率耦合到等离子体。
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公开(公告)号:US09048518B2
公开(公告)日:2015-06-02
申请号:US13507383
申请日:2012-06-21
申请人: Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White , Ranjit Indrajit Shinde , Seon-Mee Cho , Douglas D. Truong
发明人: Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White , Ranjit Indrajit Shinde , Seon-Mee Cho , Douglas D. Truong
IPC分类号: H01J17/26 , H01J61/28 , H01P3/00 , H05H1/24 , H01P11/00 , H01J37/32 , H05H1/46 , H01P3/06 , H01P3/08 , H01Q13/22
CPC分类号: H01J37/32082 , H01J37/3222 , H01J37/32577 , H01P3/00 , H01P3/06 , H01P3/085 , H01P11/003 , H01Q13/22 , H05H1/24 , H05H1/46 , H05H2001/463 , Y10T29/49169
摘要: A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.
摘要翻译: 用于将RF功率耦合到等离子体室中的等离子体的传输线RF施加装置和方法。 该装置包括内部导体和一个或两个外部导体。 一个或两个外部导体中的每一个的主要部分包括在外部导体的内表面和外表面之间延伸的多个孔。
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公开(公告)号:US20130221833A1
公开(公告)日:2013-08-29
申请号:US13507383
申请日:2012-06-21
申请人: Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White , Ranjit Indrajit Shinde , Seon-Mee Cho , Douglas D. Truong
发明人: Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White , Ranjit Indrajit Shinde , Seon-Mee Cho , Douglas D. Truong
CPC分类号: H01J37/32082 , H01J37/3222 , H01J37/32577 , H01P3/00 , H01P3/06 , H01P3/085 , H01P11/003 , H01Q13/22 , H05H1/24 , H05H1/46 , H05H2001/463 , Y10T29/49169
摘要: A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.
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