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公开(公告)号：US20130126941A1
公开(公告)日：2013-05-23
申请号：US13613177
申请日：2012-09-13
IPC分类号： H01L31/105
CPC分类号： G02B6/122 , G02B6/29352 , G02B2006/121 , G02F1/025 , H01L31/105
摘要： A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.
摘要翻译： 半导体光学器件包括第一覆盖层，第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层，其中，光波导层包括第一半导体层，第二半导体层，设置在第一覆盖层 半导体层并且沿一个方向延伸，以及覆盖第二半导体层的顶表面的第三半导体层，并且其中第一半导体层包括设置在第二半导体层一侧的n型区域，p型区域 设置在第二半导体层的另一侧，以及设置在n型区域和p型区域之间的i型区域，并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。
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公开(公告)号：US08809906B2
公开(公告)日：2014-08-19
申请号：US13613177
申请日：2012-09-13
IPC分类号： H01L31/102
CPC分类号： G02B6/122 , G02B6/29352 , G02B2006/121 , G02F1/025 , H01L31/105
摘要： A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.
摘要翻译： 半导体光学器件包括第一覆盖层，第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层，其中，光波导层包括第一半导体层，第二半导体层，设置在第一覆盖层 半导体层并且沿一个方向延伸，以及覆盖第二半导体层的顶表面的第三半导体层，并且其中第一半导体层包括设置在第二半导体层一侧的n型区域，p型区域 设置在第二半导体层的另一侧，以及设置在n型区域和p型区域之间的i型区域，并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。
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公开(公告)号：US08472109B2
公开(公告)日：2013-06-25
申请号：US12636209
申请日：2009-12-11
CPC分类号： H01S5/0288 , H01S5/0268 , H01S5/06817 , H01S5/101 , H01S5/1032 , H01S5/2206 , H01S5/34 , H01S5/50 , H01S5/5045 , H01S2301/02
摘要： A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light.
摘要翻译： 半导体光放大器包括半导体衬底; 包括形成在所述半导体衬底上的有源层的光波导; 以及波长选择反射膜，其形成在信号光入射到光波导上的端面上，所述波长选择反射膜允许信号光的透射，并且反射除了信号光之外的任何波长的光。
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公开(公告)号：US20100245990A1
公开(公告)日：2010-09-30
申请号：US12636209
申请日：2009-12-11
CPC分类号： H01S5/0288 , H01S5/0268 , H01S5/06817 , H01S5/101 , H01S5/1032 , H01S5/2206 , H01S5/34 , H01S5/50 , H01S5/5045 , H01S2301/02
摘要： A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light.
摘要翻译： 半导体光放大器包括半导体衬底; 包括形成在所述半导体衬底上的有源层的光波导; 以及波长选择反射膜，其形成在信号光入射到光波导上的端面上，所述波长选择反射膜允许信号光的透射，并且反射除了信号光之外的任何波长的光。
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公开(公告)号：US07852894B2
公开(公告)日：2010-12-14
申请号：US12199099
申请日：2008-08-27
申请人： Shigeaki Sekiguchi
发明人： Shigeaki Sekiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , H01S5/0425 , H01S5/06258 , H01S5/124
摘要： A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and provided along the optical waveguide over the overall length of the optical waveguide on the semiconductor substrate. The semiconductor laser is configured such that a Bragg wavelength in a region in the proximity of each of the opposite ends of the optical waveguide is longer than a Bragg wavelength in a region in the proximity of the phase shift in a state in which current injection is not performed for the optical waveguide.
摘要翻译： 半导体激光器包括形成在半导体衬底上并能够通过电流注入产生增益的光波导，以及具有相移的衍射光栅，并且沿着光波导在半导体衬底上的光波导的整个长度上提供。 半导体激光器被配置为使得在光波导的每个相对端附近的区域中的布拉格波长比在当前注入的状态下的相移附近的区域中的布拉格波长长 不对光波导执行。
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公开(公告)号：US20110233379A1
公开(公告)日：2011-09-29
申请号：US13152779
申请日：2011-06-03
申请人： Shigeaki Sekiguchi
发明人： Shigeaki Sekiguchi
CPC分类号： H01S5/026 , G02F1/0102 , G02F2201/58 , G02F2203/20 , G02F2203/21 , G02F2203/50 , G02F2203/70 , H01S5/0265 , H01S5/0625 , H01S5/10 , H01S5/1025 , H01S5/14
摘要： An optical signal generator includes a single-mode laser; a reflecting mirror to define another cavity different from a cavity of the single-mode laser, and reflect a part of output light from the single-mode laser to return the part of the output light to the single-mode laser; an intensity modulator provided between the single-mode laser and the reflecting mirror; and a phase adjuster, provided between the single-mode laser and the reflecting mirror, to adjust a frequency difference between a signal on state and a signal off state generated in accordance with intensity modulation by the intensity modulator.
摘要翻译： 光信号发生器包括单模激光器; 反射镜，以限定与单模激光器的腔不同的另一腔，并且反射来自单模激光器的输出光的一部分以将输出光的一部分返回到单模激光器; 设置在单模激光器和反射镜之间的强度调制器; 以及设置在单模激光器和反射镜之间的相位调节器，用于调整信号接通状态与根据强度调制器的强度调制产生的信号关闭状态之间的频率差。
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7.发明授权Optical signal generator and method for adjusting the same having a reflecting mirror to define another cavity different from the cavity of a single mode laser 有权光信号发生器及其调整方法，具有反射镜以限定与单模激光器的腔不同的另一空腔公开(公告)号：US08420993B2
公开(公告)日：2013-04-16
申请号：US13152779
申请日：2011-06-03
申请人： Shigeaki Sekiguchi
发明人： Shigeaki Sekiguchi
IPC分类号： G01J1/32
CPC分类号： H01S5/026 , G02F1/0102 , G02F2201/58 , G02F2203/20 , G02F2203/21 , G02F2203/50 , G02F2203/70 , H01S5/0265 , H01S5/0625 , H01S5/10 , H01S5/1025 , H01S5/14
摘要： An optical signal generator includes a single-mode laser; a reflecting mirror to define another cavity different from a cavity of the single-mode laser, and reflect a part of output light from the single-mode laser to return the part of the output light to the single-mode laser; an intensity modulator provided between the single-mode laser and the reflecting mirror; and a phase adjuster, provided between the single-mode laser and the reflecting mirror, to adjust a frequency difference between a signal on state and a signal off state generated in accordance with intensity modulation by the intensity modulator.
摘要翻译： 光信号发生器包括单模激光器; 反射镜，以限定与单模激光器的腔不同的另一腔，并且反射来自单模激光器的输出光的一部分以将输出光的一部分返回到单模激光器; 设置在单模激光器和反射镜之间的强度调制器; 以及设置在单模激光器和反射镜之间的相位调节器，用于调整信号接通状态与根据强度调制器的强度调制产生的信号关闭状态之间的频率差。
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公开(公告)号：US06872966B2
公开(公告)日：2005-03-29
申请号：US10620423
申请日：2003-07-17
IPC分类号： G02F1/017 , G02F1/225 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01S5/026 , H01S5/042 , H01S5/12
CPC分类号： H01S5/0265 , G02F1/2255 , G02F1/2257 , H01S5/0425 , H01S5/12 , H01S2302/00
摘要： There are provided first and second optical waveguides formed on a semiconductor substrate and having upper clad layers and core layers that are separated mutually respectively, first and second phase modulation electrodes formed on the first and second optical waveguides respectively, and first and second slot-line electrodes formed on the semiconductor substrate on both sides of the first and second optical waveguides and connected to the first and second phase modulation electrodes via air-bridge wirings separately respectively.
摘要翻译： 提供形成在半导体衬底上的第一和第二光波导，分别相互分离的上包层和芯层，分别形成在第一和第二光波导上的第一和第二相位调制电极，以及第一和第二槽线 电极，其形成在第一和第二光波导的两侧上的半导体衬底上，并分别经由空气桥接线连接到第一和第二相位调制电极。
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