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    SEMICONDUCTOR OPTICAL DEVICE
    2.
    发明申请
    SEMICONDUCTOR OPTICAL DEVICE 有权
    半导体光学器件

    公开(公告)号：US20130126941A1

    公开(公告)日：2013-05-23

    申请号：US13613177

    申请日：2012-09-13

    申请人： Lei Zhu ,  Shigeaki Sekiguchi ,  Shinsuke Tanaka ,  Kenichi Kawaguchi

    发明人： Lei Zhu ,  Shigeaki Sekiguchi ,  Shinsuke Tanaka ,  Kenichi Kawaguchi

    IPC分类号： H01L31/105

    CPC分类号： G02B6/122 ,  G02B6/29352 ,  G02B2006/121 ,  G02F1/025 ,  H01L31/105

    摘要： A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.

    摘要翻译： 半导体光学器件包括第一覆盖层，第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层，其中，光波导层包括第一半导体层，第二半导体层，设置在第一覆盖层 半导体层并且沿一个方向延伸，以及覆盖第二半导体层的顶表面的第三半导体层，并且其中第一半导体层包括设置在第二半导体层一侧的n型区域，p型区域 设置在第二半导体层的另一侧，以及设置在n型区域和p型区域之间的i型区域，并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。

    Semiconductor laser and semiconductor optical integrated device
    3.
    发明授权
    Semiconductor laser and semiconductor optical integrated device 有权
    半导体激光器和半导体光学集成器件

    公开(公告)号：US07852894B2

    公开(公告)日：2010-12-14

    申请号：US12199099

    申请日：2008-08-27

    申请人： Shigeaki Sekiguchi

    发明人： Shigeaki Sekiguchi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/12 ,  H01S5/0425 ,  H01S5/06258 ,  H01S5/124

    摘要： A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and provided along the optical waveguide over the overall length of the optical waveguide on the semiconductor substrate. The semiconductor laser is configured such that a Bragg wavelength in a region in the proximity of each of the opposite ends of the optical waveguide is longer than a Bragg wavelength in a region in the proximity of the phase shift in a state in which current injection is not performed for the optical waveguide.

    摘要翻译： 半导体激光器包括形成在半导体衬底上并能够通过电流注入产生增益的光波导，以及具有相移的衍射光栅，并且沿着光波导在半导体衬底上的光波导的整个长度上提供。 半导体激光器被配置为使得在光波导的每个相对端附近的区域中的布拉格波长比在当前注入的状态下的相移附近的区域中的布拉格波长长 不对光波导执行。

    Semiconductor optical device
    4.
    发明授权
    Semiconductor optical device 有权
    半导体光学器件

    公开(公告)号：US08809906B2

    公开(公告)日：2014-08-19

    申请号：US13613177

    申请日：2012-09-13

    申请人： Lei Zhu ,  Shigeaki Sekiguchi ,  Shinsuke Tanaka ,  Kenichi Kawaguchi

    发明人： Lei Zhu ,  Shigeaki Sekiguchi ,  Shinsuke Tanaka ,  Kenichi Kawaguchi

    IPC分类号： H01L31/102

    CPC分类号： G02B6/122 ,  G02B6/29352 ,  G02B2006/121 ,  G02F1/025 ,  H01L31/105

    摘要： A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.

    摘要翻译： 半导体光学器件包括第一覆盖层，第二覆盖层和夹在第一覆盖层和第二覆盖层之间的光波导层，其中，光波导层包括第一半导体层，第二半导体层，设置在第一覆盖层 半导体层并且沿一个方向延伸，以及覆盖第二半导体层的顶表面的第三半导体层，并且其中第一半导体层包括设置在第二半导体层一侧的n型区域，p型区域 设置在第二半导体层的另一侧，以及设置在n型区域和p型区域之间的i型区域，并且其中第二半导体层具有比第一半导体层的带隙窄的带隙 和第三半导体层。

    OPTICAL SIGNAL GENERATOR AND METHOD FOR ADJUSTING THE SAME
    5.
    发明申请
    OPTICAL SIGNAL GENERATOR AND METHOD FOR ADJUSTING THE SAME 有权
    光信号发生器及其调整方法

    公开(公告)号：US20110233379A1

    公开(公告)日：2011-09-29

    申请号：US13152779

    申请日：2011-06-03

    申请人： Shigeaki Sekiguchi

    发明人： Shigeaki Sekiguchi

    IPC分类号： G01J1/16 ,  G02F1/01 ,  G02F1/17 ,  G01D5/34

    CPC分类号： H01S5/026 ,  G02F1/0102 ,  G02F2201/58 ,  G02F2203/20 ,  G02F2203/21 ,  G02F2203/50 ,  G02F2203/70 ,  H01S5/0265 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/1025 ,  H01S5/14

    摘要： An optical signal generator includes a single-mode laser; a reflecting mirror to define another cavity different from a cavity of the single-mode laser, and reflect a part of output light from the single-mode laser to return the part of the output light to the single-mode laser; an intensity modulator provided between the single-mode laser and the reflecting mirror; and a phase adjuster, provided between the single-mode laser and the reflecting mirror, to adjust a frequency difference between a signal on state and a signal off state generated in accordance with intensity modulation by the intensity modulator.

    摘要翻译： 光信号发生器包括单模激光器; 反射镜，以限定与单模激光器的腔不同的另一腔，并且反射来自单模激光器的输出光的一部分以将输出光的一部分返回到单模激光器; 设置在单模激光器和反射镜之间的强度调制器; 以及设置在单模激光器和反射镜之间的相位调节器，用于调整信号接通状态与根据强度调制器的强度调制产生的信号关闭状态之间的频率差。

    Optical signal generator and method for adjusting the same having a reflecting mirror to define another cavity different from the cavity of a single mode laser
    7.
    发明授权
    Optical signal generator and method for adjusting the same having a reflecting mirror to define another cavity different from the cavity of a single mode laser 有权
    光信号发生器及其调整方法，具有反射镜以限定与单模激光器的腔不同的另一空腔

    公开(公告)号：US08420993B2

    公开(公告)日：2013-04-16

    申请号：US13152779

    申请日：2011-06-03

    申请人： Shigeaki Sekiguchi

    发明人： Shigeaki Sekiguchi

    IPC分类号： G01J1/32

    CPC分类号： H01S5/026 ,  G02F1/0102 ,  G02F2201/58 ,  G02F2203/20 ,  G02F2203/21 ,  G02F2203/50 ,  G02F2203/70 ,  H01S5/0265 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/1025 ,  H01S5/14

    摘要： An optical signal generator includes a single-mode laser; a reflecting mirror to define another cavity different from a cavity of the single-mode laser, and reflect a part of output light from the single-mode laser to return the part of the output light to the single-mode laser; an intensity modulator provided between the single-mode laser and the reflecting mirror; and a phase adjuster, provided between the single-mode laser and the reflecting mirror, to adjust a frequency difference between a signal on state and a signal off state generated in accordance with intensity modulation by the intensity modulator.

    摘要翻译： 光信号发生器包括单模激光器; 反射镜，以限定与单模激光器的腔不同的另一腔，并且反射来自单模激光器的输出光的一部分以将输出光的一部分返回到单模激光器; 设置在单模激光器和反射镜之间的强度调制器; 以及设置在单模激光器和反射镜之间的相位调节器，用于调整信号接通状态与根据强度调制器的强度调制产生的信号关闭状态之间的频率差。