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1.发明申请公开(公告)号：US20240397828A1
公开(公告)日：2024-11-28
申请号：US18321268
申请日：2023-05-22
Inventor： Ching-Hui Lin , Yi-Hsien Chang , Chun-Ren Cheng , Shih-Fen Huang , Fu-Chun Huang , Chao-Hung Chu , Po-Chen Yeh
IPC: H10N30/87 , H10N30/057 , H10N30/063 , H10N30/072 , H10N30/50
Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric device including a piezoelectric structure over a substrate. A first conductive structure is disposed on a lower surface of the piezoelectric structure. The first conductive structure includes one or more first movable elements directly contacting the piezoelectric structure. A second conductive structure is disposed on an upper surface of the piezoelectric structure. The second conductive structure includes one or more second movable elements directly contacting the piezoelectric structure. The one or more second movable elements directly overlie the one or more first movable elements.
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2.发明授权公开(公告)号：US12082505B2
公开(公告)日：2024-09-03
申请号：US17881934
申请日：2022-08-05
Inventor： Alexander Kalnitsky , Chun-Ren Cheng , Chi-Yuan Shih , Kai-Fung Chang , Shih-Fen Huang , Yi-Chuan Teng , Yi Heng Tsai , You-Ru Lin , Yan-Jie Liao
IPC: H10N30/04 , G01N25/58 , H10N30/00 , H10N30/067 , H10N30/87 , H10N30/063
CPC classification number: H10N30/10513 , G01N25/58 , H10N30/04 , H10N30/067 , H10N30/877 , H10N30/063
Abstract: In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.
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公开(公告)号：US20230373780A1
公开(公告)日：2023-11-23
申请号：US18366151
申请日：2023-08-07
Inventor： Fan Hu , Chun-Ren Cheng , Hsiang-Fu Chen , Wen-Chuan Tai
CPC classification number: B81B3/0013 , B81C1/00968 , B81B2203/04 , B81B2207/012 , B81B2203/0109 , B81B2207/03 , B81B2207/07
Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure
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公开(公告)号：US11768170B2
公开(公告)日：2023-09-26
申请号：US17221441
申请日：2021-04-02
Inventor： Yi-Shao Liu , Chun-Ren Cheng , Chun-Wen Cheng
IPC: G01N27/414 , G03F7/20 , G03F7/00 , B01L3/00 , G01N33/543
CPC classification number: G01N27/4145 , B01L3/502715 , G01N33/54373 , G03F7/0035 , G03F7/20 , B01L3/502707 , B01L2200/12 , B01L2300/0636 , B01L2300/0645 , B01L2300/0819 , B01L2300/0887
Abstract: A biochip including a fluidic substrate having an opening extending completely through the fluidic substrate. The biochip further includes a silicon oxide coating on the fluidic substrate. The biochip further includes a plurality of sidewalls on the fluidic substrate, wherein the plurality of sidewalls defines a channel in fluid communication with the opening, the silicon oxide coating is between adjacent sidewalls of the plurality of sidewalls, and each of the plurality of sidewalls comprises polydimethylsiloxane (PDMS). The biochip further includes a detection substrate spaced from the fluidic substrate.
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5.发明授权公开(公告)号：US11767219B2
公开(公告)日：2023-09-26
申请号：US16932622
申请日：2020-07-17
Inventor： Wei-Cheng Shen , Yi-Hsien Chang , Yi-Heng Tsai , Chun-Ren Cheng
IPC: B81C1/00
CPC classification number: B81C1/00825 , B81B2203/0323 , B81C2203/0785
Abstract: A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer, wherein the formation of the plurality of scribe lines includes removing portions of the second wafer from the second surface towards the first surface to form a third surface between the first surface and the second surface, and the plurality of scribe lines protrudes from the third surface of the second wafer.
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Patent Agency Ranking
公开(公告)号：US11708262B2
公开(公告)日：2023-07-25
申请号：US17687230
申请日：2022-03-04
Inventor： Yi-Hsien Chang , Chun-Ren Cheng , Wei-Cheng Shen , Wen-Chien Chen
CPC classification number: B81B3/0072 , B81B3/0013 , B81C1/00476 , B81C1/00666 , B81C1/00968 , B81C1/00984 , B81B2201/0257 , B81B2207/012 , B81C2201/0105 , B81C2201/017 , B81C2201/0109 , B81C2201/0128 , B81C2201/0147 , B81C2201/0163 , B81C2201/053 , B81C2203/0792 , H04R2201/003
Abstract: A method of manufacturing a semiconductor structure includes following operations. A first substrate is provided. A plate is formed over the first substrate. The plate includes a first tensile member, a second tensile member, a semiconductive member between the first tensile member and the second tensile member, and a plurality of apertures penetrating the first tensile member, the semiconductive member and the second tensile member. A membrane is formed over and separated from the plate. The membrane include a plurality of holes. A plurality of conductive plugs passing through the plate or membrane are formed. A plurality of semiconductive pads are formed over the plurality of conductive plugs. The plate is bonded to a second substrate. The second substrate includes a plurality of bond pads, and the semiconductive pads are in contact with the bond pads.
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公开(公告)号：US11703475B2
公开(公告)日：2023-07-18
申请号：US16588088
申请日：2019-09-30
Inventor： Yi-Shao Liu , Fei-Lung Lai , Chun-Ren Cheng , Chun-Wen Cheng
IPC: G01N27/414 , G01N21/75 , G01N33/543 , G01N27/327 , B01L3/00 , B01L9/00
CPC classification number: G01N27/4145 , B01L3/502707 , B01L9/527 , G01N21/75 , G01N27/3275 , G01N33/5438 , B01L2200/025 , B01L2200/027 , B01L2200/10 , B01L2200/143 , B01L2300/0645 , G01N27/3271 , Y10T29/49
Abstract: A method includes mounting an integrated electro-microfluidic probe card to a device area on a bio-sensor device wafer, wherein the electro-microfluidic probe card has a first major surface and a second major surface opposite the first major surface. The method further includes electrically connecting at least one electronic probe tip extending from the first major surface to a corresponding conductive area of the device area. The method further includes stamping a test fluid onto the device area. The method further includes measuring via the at least one electronic probe tip a first electrical property of one or more bio-FETs of the device area based on the test fluid.
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公开(公告)号：US20220376164A1
公开(公告)日：2022-11-24
申请号：US17880773
申请日：2022-08-04
Inventor： Ching-Hui Lin , Chun-Ren Cheng , Shih-Fen Huang , Fu-Chun Huang
IPC: H01L41/113 , G01N27/414 , H01L41/33 , H01L41/053 , H01L41/27 , H01L41/047
Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.
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公开(公告)号：US11353421B2
公开(公告)日：2022-06-07
申请号：US16577928
申请日：2019-09-20
Inventor： Yi-Hsien Chang , Chun-Ren Cheng , Shih-Wei Lin , Yi-Shao Liu
IPC: G01N27/414 , H01L21/8234 , H01L21/311 , H01L21/768 , H01L21/285 , H01L21/3213 , H01L27/28
Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.
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10.发明授权公开(公告)号：US11280786B2
公开(公告)日：2022-03-22
申请号：US16207490
申请日：2018-12-03
Inventor： Chia-Hua Chu , Allen Timothy Chang , Ching-Ray Chen , Yi-Hsien Chang , Yi-Shao Liu , Chun-Ren Cheng , Chun-Wen Cheng
IPC: G01N33/543 , H01L21/00
Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.
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