Abstract:
A first insulating layer, a conductor layer included on a first main surface, an electronic component included on the first main surface and a second insulating layer stacked on the first insulating layer are included, a stacking direction of the first insulating layer and the second insulating layer is the same as a stacking direction of a first electrode layer, a second electrode layer, and the dielectric layer in the electronic component, and a height position of a main surface of the electronic component on an opposite side from a side of the first main surface is different from a height position of a main surface of the conductor layer adjacent to the electronic component on an opposite side from a side of the first main surface in the stacking direction.
Abstract:
Provided is a manufacturing method of a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, the manufacturing method including a lamination process of alternately laminating the plurality of electrode layers and a dielectric film and forming a laminated body which will be the capacitance portion, a first etching process of forming an opening extending in a laminating direction with respect to the laminated body and exposing the dielectric film laminated directly on one of the plurality of electrode layers on a bottom surface of the opening, and a second etching process of exposing the one electrode layer at the bottom surface of the opening. In the second etching process, an etching rate of the one electrode layer is lower than an etching rate of the dielectric film.
Abstract:
A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.
Abstract:
A thin-film capacitor includes electrode layers stacked in a stacking direction; dielectric layers stacked between the electrode layers; an opening portion that includes a side surface penetrating at least a part of the electrode layers and at least a part of the dielectric layers in the stacking direction from a top side and a bottom surface exposing one of the electrode layers; and a wiring portion disposed in the opening portion to be separated from the side surface of the opening portion, and electrically connected to the electrode layer exposed from the bottom surface of the opening portion. The dielectric layer that is stacked immediately on the electrode layer exposed from the bottom surface of the opening portion among the dielectric layers includes an extension portion extending in the opening portion from the side surface of the opening portion to the wiring portion side.
Abstract:
The electronic device includes a terminal structure and a printed circuit board including the terminal structure. The terminal structure includes a solder-joint conductor region placed on a wiring conductor, an intermediate layer contacting with the conductor region, and a solder region contacting with the intermediate layer. The intermediate layer includes an intermetallic compound including tin and at least one of copper and nickel as principal components. When the indentation elastic modulus of the conductor region is E1 and the indentation elastic modulus of the intermediate layer is E2, the ratio of E1 to E2 is equal to or more than 0.8 and equal to or less than 1.5.
Abstract:
Provided is a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, wherein the capacitance portion has an opening which extends in a lamination direction in which the plurality of electrode layers and the dielectric layer are laminated and through which one electrode layer of the plurality of electrode layers is exposed, the one electrode layer has an exposed portion exposed at a bottom surface of the opening, the exposed portion is in contact with a wiring layer connecting the one electrode layer and an electrode terminal, and a thickness of the exposed portion of the one electrode layer is smaller than a thickness of other portions of the one electrode layer and is 50% or more of the thickness of the other portions of the one electrode layer.
Abstract:
Disclosed herein is an electronic component that includes a substrate, a functional layer formed on the substrate and having a plurality of alternately stacked conductor layers and insulating layers, and a plurality of terminal electrodes provided on an uppermost one of the insulating layers. The uppermost one of the insulating layers has a substantially rectangular planar shape and has a protruding part protruding in a planar direction from at least one side in a plan view.
Abstract:
Disclosed herein is a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer positioned between the lower electrode layer and the upper electrode layer. The upper electrode layer has a first capacitive electrode part opposed to the lower electrode layer through the dielectric layer without being connected to the lower electrode layer and a fiducial mark part penetrating the dielectric layer to be connected to the lower electrode layer.
Abstract:
A high-frequency transmission line in which the alternating-current resistance is low is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a peripheral part 8 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.
Abstract:
A high-frequency transmission line in which the alternating-current resistance is low and that is hard to disconnect is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a central part 6 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.