Electronic component-incorporating substrate

    公开(公告)号:US11367626B2

    公开(公告)日:2022-06-21

    申请号:US16499501

    申请日:2018-03-16

    Abstract: A first insulating layer, a conductor layer included on a first main surface, an electronic component included on the first main surface and a second insulating layer stacked on the first insulating layer are included, a stacking direction of the first insulating layer and the second insulating layer is the same as a stacking direction of a first electrode layer, a second electrode layer, and the dielectric layer in the electronic component, and a height position of a main surface of the electronic component on an opposite side from a side of the first main surface is different from a height position of a main surface of the conductor layer adjacent to the electronic component on an opposite side from a side of the first main surface in the stacking direction.

    Etching manufacturing method of thin film capacitor

    公开(公告)号:US11195661B2

    公开(公告)日:2021-12-07

    申请号:US16294139

    申请日:2019-03-06

    Abstract: Provided is a manufacturing method of a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, the manufacturing method including a lamination process of alternately laminating the plurality of electrode layers and a dielectric film and forming a laminated body which will be the capacitance portion, a first etching process of forming an opening extending in a laminating direction with respect to the laminated body and exposing the dielectric film laminated directly on one of the plurality of electrode layers on a bottom surface of the opening, and a second etching process of exposing the one electrode layer at the bottom surface of the opening. In the second etching process, an etching rate of the one electrode layer is lower than an etching rate of the dielectric film.

    Thin-film capacitor
    3.
    发明授权

    公开(公告)号:US10529495B2

    公开(公告)日:2020-01-07

    申请号:US15725571

    申请日:2017-10-05

    Abstract: A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.

    Thin-film capacitor
    4.
    发明授权

    公开(公告)号:US10319524B2

    公开(公告)日:2019-06-11

    申请号:US15725654

    申请日:2017-10-05

    Abstract: A thin-film capacitor includes electrode layers stacked in a stacking direction; dielectric layers stacked between the electrode layers; an opening portion that includes a side surface penetrating at least a part of the electrode layers and at least a part of the dielectric layers in the stacking direction from a top side and a bottom surface exposing one of the electrode layers; and a wiring portion disposed in the opening portion to be separated from the side surface of the opening portion, and electrically connected to the electrode layer exposed from the bottom surface of the opening portion. The dielectric layer that is stacked immediately on the electrode layer exposed from the bottom surface of the opening portion among the dielectric layers includes an extension portion extending in the opening portion from the side surface of the opening portion to the wiring portion side.

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