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公开(公告)号:US20190027700A1
公开(公告)日:2019-01-24
申请号:US16066858
申请日:2017-01-19
Applicant: TORAY INDUSTRIES, INC.
Inventor: Hiroji SHIMIZU , Seiichiro MURASE , Daisuke SAKAII
Abstract: An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.
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2.
公开(公告)号:US20140061629A1
公开(公告)日:2014-03-06
申请号:US14073651
申请日:2013-11-06
Applicant: Toray Industries, Inc.
Inventor: Seiichiro MURASE , Kazumasa NAGAO , Kazunori SUGIMOTO
CPC classification number: H01L51/0054 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1088 , C09K2211/1092 , H01L51/0058 , H01L51/0059 , H01L51/006 , H01L51/0067 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0077 , H01L51/50 , H01L2251/308 , H05B33/14
Abstract: A light emitting device material containing a pyrene compound of general formula (1) and a light emitting device. In formula (1), R1 to R18 are the same or different and are selected from hydrogen, alkyl, cycloalkyl, heterocyclic, alkenyl, cycloalkenyl, alkynyl, alkoxy, alkylthio, arylether, arylthioether, aryl, heteroaryl, halogen, carbonyl, a carboxyl, oxycarbonyl, carbamoyl, amino, phosphine oxide and silyl; adjacent substituents among R1 to R18 may be combined with each other to form a ring; n is an integer of 1 to 3; X is —O—, —S— or —NR19—; R19 is hydrogen, alkyl, cycloalkyl, heterocyclic, alkenyl, cycloalkenyl, alkynyl, aryl, heteroaryl or amino; R19 may be combined with R11 or R18 to form a ring; Y is a single bond, arylene or heteroarylene; and n substituents among R1 to R10 and any one of R11 to R19 are used for linkage with Y
Abstract translation: 含有通式(1)的芘化合物和发光装置的发光装置材料。 在式(1)中,R 1至R 18相同或不同,选自氢,烷基,环烷基,杂环,烯基,环烯基,炔基,烷氧基,烷硫基,芳基醚,芳硫醚,芳基,杂芳基,卤素, ,氧羰基,氨基甲酰基,氨基,氧化膦和甲硅烷基; R 1〜R 18中的相邻取代基可以相互结合形成环; n为1〜3的整数。 X是-O - , - S-或-NR 19 - ; R19是氢,烷基,环烷基,杂环,烯基,环烯基,炔基,芳基,杂芳基或氨基; R19可以与R11或R18结合形成环; Y是单键,亚芳基或亚杂芳基; R 1〜R 10中的任意1个以及R 11〜R 19中的任意一个与Y连接
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公开(公告)号:US20210083214A1
公开(公告)日:2021-03-18
申请号:US16630759
申请日:2018-09-25
Applicant: TORAY INDUSTRIES, INC.
Inventor: Daisuke SAKII , Seiichiro MURASE , Junji WAKITA
IPC: H01L51/05 , H01L51/00 , H01L51/10 , C08G77/58 , C08G77/44 , C08K3/22 , C08K3/04 , C08K3/08 , G06K19/07
Abstract: A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.
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4.
公开(公告)号:US20200244182A1
公开(公告)日:2020-07-30
申请号:US16652579
申请日:2018-10-25
Applicant: TORAY INDUSTRIES, INC.
Inventor: Hiroji SHIMIZU , Seiichiro MURASE
IPC: H02M7/48 , G06K19/02 , G06K19/07 , H01L27/088 , H01L27/10 , H01L29/786 , C01B32/158
Abstract: An object of the present invention is to provide an excellent integrated circuit by a simple process. The present invention is an integrated circuit, which includes at least a memory array that stores data, a rectifying circuit that rectifies an alternating current and generates a direct-current voltage, and a logic circuit that reads data stored in a memory and in which the memory array includes a first semiconductor element having a first semiconductor layer, the rectifying circuit includes a second semiconductor element having a second semiconductor layer, the logic circuit includes a third semiconductor element having a third semiconductor layer, the first semiconductor element is a memory element, the second semiconductor element is a rectifying element, the third semiconductor element is a logic element, the second semiconductor layer is a functional layer exhibiting a rectifying action, the third semiconductor layer is a channel layer of a logic element, and all of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer and all of the functional layer exhibiting a rectifying action and the channel layer are formed of the same material including at least one selected from an organic semiconductor, a carbon nanotube, graphene, or fullerene.
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公开(公告)号:US20190285576A1
公开(公告)日:2019-09-19
申请号:US16340937
申请日:2017-10-13
Applicant: TORAY INDUSTRIES, INC.
Inventor: Kojiro NAITO , Kazumasa NAGAO , Seiichiro MURASE
IPC: G01N27/414 , G01N33/543 , H01L51/00
Abstract: A semiconductor sensor includes: a substrate; a first electrode; a second electrode; and a semiconductor layer located between the first electrode and the second electrode. The semiconductor layer includes a semiconducting component to which target recognition molecules are bonded or attached, the target recognition molecule includes at least a target capture body X and a linking group L2, the target capture body X is a protein or nucleic acid having a molecular weight of 20,000 or higher and 200,000 or lower, and number of atom(s) N from the atom bonded to the semiconducting component or from the atom bonded to the group attached to the semiconducting component to the atom bonded to the atom originated from the target capture body X in the linking group L2 is 5 or more and 30 or less.
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公开(公告)号:US20180371269A1
公开(公告)日:2018-12-27
申请号:US15777072
申请日:2016-11-24
Applicant: TORAY INDUSTRIES, INC.
Inventor: Yuichi TSUJI , Takejiro INOUE , Seiichiro MURASE
IPC: C09D11/101 , B41M1/06 , C09D11/107
Abstract: Provided is a lithographic ink having superior surface staining resistance and fluidity. Also provided is a method for manufacturing a printed material using the lithographic ink. The lithographic ink has all of a viscosity (A) at a rotational speed of 0.5 rpm, a viscosity (B) at a rotational speed of 20 rpm, and a viscosity (C) at a rotational speed of 50 rpm of 5 Pa·s or more and 100 Pa·s or less, the viscosities (A), (B), and (C) being measured by using a cone-plate rotating viscometer at 25° C., and has a viscosity ratio (C)/(B) of 0.8 or more and 1.0 or less.
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公开(公告)号:US20220149286A1
公开(公告)日:2022-05-12
申请号:US17436221
申请日:2020-02-06
Applicant: TORAY INDUSTRIES, INC.
Inventor: Takayoshi HIRAI , Hidekazu NISHINO , Seiichiro MURASE
IPC: H01L51/00 , C01B32/174 , C08F292/00 , H01L51/05
Abstract: A carbon nanotube composition capable of producing an FET having improved mobility is provided. The carbon nanotube composition of the present invention is a halogen-free carbon nanotube composition comprising a carbon nanotube having the following features (1) and (2).
(1) A dispersion liquid obtained by dispersing the carbon nanotube in a solution containing a cholic acid derivative and water has, in the absorption spectrum in the wavelength range of 300 nm to 1100 nm measured by an ultraviolet/visible/near-infrared spectroscopy, the minimum absorbance in the range of 600 nm to 700 nm and the maximum absorbance in the range of 900 nm to 1050 nm; wherein the ratio of the minimum absorbance and the maximum absorbance is 2.5 or more and 4.5 or less; and (2) the dispersion liquid has the height ratio of the G-band and the D-band (value of (D/G)×100) of 3.33 or less, as measured by a Raman spectrophotometer, using light having a wavelength of 532 nm as excitation light.-
公开(公告)号:US20200321399A1
公开(公告)日:2020-10-08
申请号:US16303873
申请日:2017-05-29
Applicant: TORAY INDUSTRIES, INC.
Inventor: Shota KAWAI , Seiichiro MURASE , Hiroji SHIMIZU
IPC: H01L27/28 , G06K19/077 , H01L51/00 , H01L51/10
Abstract: A memory array includes: a plurality of first wires; at least one second wire crossing the first wires; and a plurality of memory elements provided in correspondence with respective intersections of the first wires and the at least one second wire and each having a first electrode and a second electrode arranged spaced apart from each other, a third electrode connected to one of the at least one second wire, and an insulating layer that electrically insulates the first electrode and the second electrode and the third electrode from each other, the first wires, the at least one second wire, and the first wires, the at least one second wire, and the memory elements being formed on a substrate.
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公开(公告)号:US20180327530A1
公开(公告)日:2018-11-15
申请号:US15774936
申请日:2016-11-21
Applicant: TORAY INDUSTRIES, INC.
Inventor: Junji WAKITA , Hiroji SHIMIZU , Shota KAWAI , Seiichiro MURASE
IPC: C08F220/14 , H01L51/00 , C08F220/32 , C08G18/71 , C08G18/34 , C08F212/08 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/40 , H01L27/28 , H01L51/05 , G06K19/077
CPC classification number: C08F220/14 , C08F212/08 , C08F220/32 , C08F2220/1841 , C08F2220/325 , C08F2800/20 , C08G18/34 , C08G18/71 , G03F7/004 , G03F7/038 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/322 , G03F7/40 , G06K19/07773 , H01B1/22 , H01B5/16 , H01L21/288 , H01L27/105 , H01L27/11507 , H01L27/1159 , H01L27/28 , H01L27/283 , H01L29/786 , H01L51/004 , H01L51/0043 , H01L51/0048 , H01L51/05 , H01L51/0558
Abstract: An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.
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公开(公告)号:US20180210337A1
公开(公告)日:2018-07-26
申请号:US15743199
申请日:2016-08-10
Applicant: TORAY INDUSTRIES, INC.
Inventor: Junji WAKITA , Hiroji SHIMIZU , Seiichiro MURASE
IPC: G03F7/031 , G03F7/095 , G03F7/09 , G03F7/20 , G03F7/004 , G03F7/16 , G03F7/32 , H01L23/66 , H01L21/48 , G06K19/077 , H01Q1/38
CPC classification number: G03F7/031 , B82Y30/00 , B82Y40/00 , G03F7/0035 , G03F7/0045 , G03F7/0047 , G03F7/027 , G03F7/0388 , G03F7/094 , G03F7/095 , G03F7/16 , G03F7/168 , G03F7/2002 , G03F7/2022 , G03F7/322 , G06K19/077 , G06K19/07722 , H01L21/4853 , H01L21/4867 , H01L23/66 , H01L29/786 , H01L51/0036 , H01L51/0043 , H01L51/0048 , H01L51/05 , H01L2223/6677 , H01P11/00 , H01Q1/2208 , H01Q1/38 , H01Q7/00 , H05K1/09 , H05K1/16 , Y10S977/742 , Y10S977/842 , Y10S977/954
Abstract: An object of the present invention is to provide a method for accurately forming an antenna substrate as well as an antenna substrate with wiring line and electrode by a coating method. One aspect of the present invention provides a method for producing an antenna substrate with wiring line and electrode including the steps of: (1) forming a coating film using a photosensitive paste containing a conductive material and a photosensitive organic component on an insulating substrate; (2-A) processing the coating film into a pattern corresponding to an antenna by photolithography; (2-B) processing the coating film into a pattern corresponding to a wiring line; (2-C) processing the coating film into a pattern corresponding to an electrode; (3-A) curing the pattern corresponding to an antenna into an antenna; (3-B) curing the pattern corresponding to a wiring line into a wiring line; and (3-C) curing the pattern corresponding to an electrode into an electrode.
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