公开(公告)号：US07790626B2

公开(公告)日：2010-09-07

申请号：US11577505

申请日：2005-10-18

申请人： Taro Ikeda ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Taro Ikeda ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/00

CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/3471 ,  H01J37/34 ,  H01J2237/3327 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： The present invention relates to a technology for depositing a thin metal film by using a plasma sputtering technique on a top surface of a target object, e.g., a semiconductor wafer or the like, and on a surface of a recess opened at the top surface. The film deposition method is characterized in that a film deposition process to deposit a metal film on a sidewall of the recess by generating metal ions by way of making a metal target sputter with a plasma generated from a discharge gas in the processing container and by applying to the mounting table a bias power to cause a metal film deposition based on a metal ion attraction and a sputter etching based on the plasma generated from the discharge gas simultaneously on the top surface of the target object.

摘要翻译： 本发明涉及通过使用等离子体溅射技术在目标物体（例如半导体晶片等）的顶面上以及在顶面开口的凹部的表面上沉积金属薄膜的技术。 膜沉积方法的特征在于，通过使金属靶溅射在处理容器中由放电气体产生的等离子体溅射金属离子，并且通过应用 在安装台上施加基于金属离子吸引的金属膜沉积和基于从放电气体产生的等离子体在目标物体的顶面上产生的溅射蚀刻的偏置功率。

公开(公告)号：US20080200002A1

公开(公告)日：2008-08-21

申请号：US11577535

申请日：2005-10-18

申请人： Kenji Suzuki ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Kenji Suzuki ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/02 ,  H01L21/44 ,  C23C14/34

CPC分类号： H01L21/2855 ,  C03C17/09 ,  C03C2218/153 ,  C03C2218/33 ,  C23C14/046 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/32706 ,  H01J37/34 ,  H01L21/2885 ,  H01L21/76877

摘要： A method for generating metal ions by sputtering a metal target (56) by plasma, attracting the metal ions by bias power to a target object S which is to be processed and is mounted on a mounting table (20) in a processing vessel, and depositing a metal film (74) on the target object having a recess (2) thus filling the recess. The bias power is set to realize such a state as the metal deposition rate by attraction of metal ions is substantially balanced with the etching rate of plasma sputter etching on the surface of the target object. Consequently, the recess in the target object can be filled with metal without causing such a defect as void.

摘要翻译： 一种通过用等离子体溅射金属靶（56）来产生金属离子的方法，通过偏置功率将金属离子吸引到待处理的目标物体S上并安装在处理容器中的安装台（20）上，以及 在具有凹部（2）的目标物体上沉积金属膜（74），从而填充凹部。 偏置功率被设定为实现这样的状态，即通过金属离子的吸引的金属沉积速率与目标物体的表面上的等离子体溅射蚀刻的蚀刻速率基本平衡。 因此，目标物体中的凹部可以用金属填充，而不会造成空隙的缺陷。

公开(公告)号：US20100167540A1

公开(公告)日：2010-07-01

申请号：US12223781

申请日：2007-02-09

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768 ,  C23C14/34

CPC分类号： C23C14/046 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883

摘要： Disclosed is a technique for embedding metal in a recess provided in the surface of a process object, such as a semiconductor wafer W, only by plasma sputtering. The metal is copper as a typical example. The recess has a microscopic hole or trench having a diameter or width of 100 nm or less as a typical example. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of a metal film in the recess. The diffusion step moves the deposited metal film toward the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer W is set to a value ensuring that, on the surface of the wafer W, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer W is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

摘要翻译： 公开了一种仅通过等离子体溅射将金属嵌入设置在诸如半导体晶片W的处理对象表面的凹部中的技术。 金属是铜，作为典型的例子。 该凹部具有作为典型实例的直径或宽度为100nm或更小的微孔或沟槽。 交替进行成膜步骤和扩散步骤。 成膜步骤在凹槽中沉积少量的金属膜。 扩散步骤将沉积的金属膜移向凹部的底部。 在成膜步骤中，施加到用于支撑晶片W的载物台的偏置功率被设定为确保在晶片W的表面上由金属颗粒的吸入引起的金属沉积速率为 基本上等于通过等离子体的溅射蚀刻的速率。 在扩散步骤中，晶片W保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

公开(公告)号：US20090183984A1

公开(公告)日：2009-07-23

申请号：US12223383

申请日：2007-01-26

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： C23C14/34 ,  C23C14/14

CPC分类号： C23C14/046 ,  C23C14/345 ,  H01J37/321 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76873 ,  H01L2221/1089

摘要： The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs.The seed film forming method of depositing a seed film for plating includes the steps of: producing metal ions by ionizing a metal target with a plasma in a processing vessel that can be evacuated; and depositing a metal film on a surface provided with recesses of a workpiece mounted on a stage placed in the processing vessel by supplying bias power to the workpiece to attract the metal ions to the workpiece; wherein a film deposition step of depositing the metal film by using the bias power determined so that the metal film deposited on the surface of the workpiece may not be sputtered, and a film deposition interrupting step of interrupting the deposition of the metal film by stopping producing the metal ions are repeated alternately by a number of cycles.

摘要翻译： 本发明涉及能够在不形成突出端的情况下在凹陷中形成种子膜的种子膜形成方法。 沉积用于电镀的种子膜的种子膜形成方法包括以下步骤：通过在能够被抽真空的处理容器中用等离子体电离金属靶产生金属离子; 以及通过向所述工件提供偏置功率以将金属离子吸引到所述工件上，在安装在放置在所述处理容器中的工作台上的工件的设置有凹部的表面上沉积金属膜; 其中，通过使用确定为使得沉积在所述工件的表面上的金属膜不会被溅射的偏置功率来沉积所述金属膜的膜沉积步骤，以及通过停止产生来中断所述金属膜的沉积的膜沉积中断步骤 金属离子交替重复多次。

公开(公告)号：US20090087583A1

公开(公告)日：2009-04-02

申请号：US12226610

申请日：2007-04-10

申请人： Takashi Sakuma ,  Osamu Yokoyama ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Osamu Yokoyama ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76873 ,  H01L2221/1089

摘要： An object to be processed (e.g., semiconductor wafer W) having a recess formed in a surface thereof is placed on a stage 34 disposed in a processing vessel 24 capable of being vacuumized. Thereafter, a plasma is generated in the processing vessel 24, so that a metal target 70 is ionized by the plasma to generate metal ions in the processing vessel 24. Then, a thin film is deposited on the surface of the object to be processed including a surface in the recess, by supplying a bias power to the stage 34 so as to draw the metal ions into the object to be processed placed on the stage 34 by the supplied bias power. In the present invention, a wattage of the bias power is varied within a range in which the surface of the object to be processed is not substantially sputtered.

摘要翻译： 将具有在其表面形成的凹部的待处理物体（例如，半导体晶片W）放置在能够被真空化的处理容器24中的台34上。 此后，在处理容器24中产生等离子体，使得金属靶70被等离子体离子化，以在处理容器24中产生金属离子。然后，在待处理物体的表面上沉积薄膜，其中包括 通过向台34提供偏置功率以便通过所提供的偏置功率将金属离子拉入放置在载物台34上的被处理物体中，从而在凹部中的表面。 在本发明中，偏置功率的功率在被处理物体的表面基本上不被溅射的范围内变化。

公开(公告)号：US08026176B2

公开(公告)日：2011-09-27

申请号：US12223781

申请日：2007-02-09

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/311

CPC分类号： C23C14/046 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883

摘要： A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

摘要翻译： 通过等离子体溅射将金属嵌入设置在处理对象（例如半导体晶片）的表面中的微观凹槽中的技术。 交替进行成膜步骤和扩散步骤。 成膜步骤在凹槽中沉积少量的金属膜。 扩散步骤将沉积的金属膜移向凹部的底部。 在成膜步骤中，施加到用于支撑晶片的载物台的偏置功率被设定为确保在晶片的表面上由于金属颗粒的吸入引起的金属沉积速率基本相等的值 到等离子体的溅射蚀刻速率。 在扩散步骤中，晶片保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

公开(公告)号：US20090227104A1

公开(公告)日：2009-09-10

申请号：US11922918

申请日：2006-06-28

申请人： Taro Ikeda ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Takashi Sakuma

发明人： Taro Ikeda ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Takashi Sakuma

IPC分类号： H01L21/768 ,  C23C14/34 ,  C23C14/38

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  H01J37/321 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844

摘要： The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

摘要翻译： 本发明是一种金属膜的成膜方法，包括以下步骤：将处理容器内的台阶上形成有凹部的被处理物放置在其表面; 抽出处理容器以在其中产生真空; 在真空处理容器中电离金属靶，通过由惰性气体制备等离子体形成的等离子体产生包含金属离子的金属颗粒; 并且通过向被放置在台架上的待加工物体施加偏置电力，以将等离子体和金属颗粒拉入待加工物体，刮掉凹部的底部以形成刮削凹部，并且沉积金属膜 在待处理物体的整个表面上，包括凹部和刮削凹槽中的表面。

公开(公告)号：US08029873B2

公开(公告)日：2011-10-04

申请号：US11922918

申请日：2006-06-28

申请人： Taro Ikeda ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Takashi Sakuma

发明人： Taro Ikeda ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Takashi Sakuma

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  H01J37/321 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844

摘要： The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

摘要翻译： 本发明是一种金属膜的成膜方法，包括以下步骤：将处理容器内的台阶上形成有凹部的被处理物放置在其表面; 抽出处理容器以在其中产生真空; 在真空处理容器中电离金属靶，通过由惰性气体制备等离子体形成的等离子体产生包含金属离子的金属颗粒; 并且通过向被放置在台架上的待加工物体施加偏置电力，以将等离子体和金属颗粒拉入待加工物体，刮掉凹部的底部以形成刮削凹部，并且沉积金属膜 在待处理物体的整个表面上，包括凹部和刮削凹槽中的表面。

公开(公告)号：US08859422B2

公开(公告)日：2014-10-14

申请号：US13359138

申请日：2012-01-26

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara ,  Kenzi Suzuki

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara ,  Kenzi Suzuki

IPC分类号： H01L21/44

CPC分类号： H01L21/02104 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  C23C14/5806 ,  C23C16/16 ,  H01J37/32899 ,  H01J37/34

摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.

摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。

公开(公告)号：US20130203250A1

公开(公告)日：2013-08-08

申请号：US13566515

申请日：2012-08-03

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenzi Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenzi Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768

CPC分类号： H01L21/76841 ,  C23C14/02 ,  C23C14/046 ,  C23C16/02 ,  C23C16/045 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.

摘要翻译： 半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态 是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。 该方法还包括在凹槽中形成导电路径的铜。