公开(公告)号：US20230094053A1

公开(公告)日：2023-03-30

申请号：US17934668

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA ,  TAKASHI SAKUMA ,  Osamu YOKOYAMA ,  Kwangpyo CHOI

IPC: H01L21/02 ,  H01L21/306

Abstract: A substrate processing method includes: preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer; forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion rather than a side wall of the penetration portion; and forming a metal film on the silicon film formed on the surface of the epitaxial layer rather than the side wall of the penetration portion, and causing the silicon film to react with the metal film to form a metal silicide film.

公开(公告)号：US20210193503A1

公开(公告)日：2021-06-24

申请号：US17116799

申请日：2020-12-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA

IPC: H01L21/687

Abstract: A substrate processing apparatus for processing a substrate, includes a stage including a through-hole vertically penetrating the stage, a pin inserted into the through-hole, and a support member configured to support the pin. The pin has a protrusion configured to protrude from the upper surface of the stage through the through-hole, and a large diameter portion located below the protrusion and formed thicker than the protrusion. The stage further includes a lateral hole formed to extend from a side surface of the stage so as to intersect with the through-hole. The support member is inserted into the lateral hole. The support member is configured to support the pin by an engagement with the large diameter portion while the support member is inserted into the lateral hole. An upper opening end of the through-hole is thinner than the large diameter portion.

公开(公告)号：US20190309420A1

公开(公告)日：2019-10-10

申请号：US16371818

申请日：2019-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA ,  Ken ITABASHI ,  Satoshi TAKAGI ,  Masahisa WATANABE ,  Keisuke FUJITA ,  Tatsuya MIYAHARA ,  Hiroyuki HAYASHI

IPC: C23C16/455 ,  H01L21/673 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.

公开(公告)号：US20150125606A1

公开(公告)日：2015-05-07

申请号：US14528047

申请日：2014-10-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahisa WATANABE ,  Hiroshi KUBOTA ,  Kazuaki CHIBA

IPC: C23C16/04 ,  C23C16/458 ,  C23C16/52 ,  C23C16/46 ,  C23C16/08 ,  C23C16/24

CPC classification number: C23C16/4583 ,  C23C16/08 ,  C23C16/24 ,  H01L21/31144

Abstract: A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.

Abstract translation: 在含有硅和氧的绝缘膜上形成蚀刻掩模结构的方法包括在形成在基板上的绝缘膜上形成第一硅膜，在第一硅膜的表面层上形成反应阻挡层，形成第二硅 膜上反应阻挡层; 以及通过将含有钨化合物的处理气体供给到所述第二硅膜上，用钨代替所述第二硅膜的硅来形成钨膜。

公开(公告)号：US20240128081A1

公开(公告)日：2024-04-18

申请号：US18481492

申请日：2023-10-05

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Toru KANAZAWA ,  Yosuke WATANABE ,  Tatsuya MIYAHARA ,  Yuki TANABE ,  Daisuke SUZUKI ,  Masahisa WATANABE ,  Keisuke SUZUKI ,  Tuhin Shuvra Basu

IPC: H01L21/02 ,  C23C16/24

CPC classification number: H01L21/02672 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592

Abstract: A film forming method includes preparing a substrate having an amorphous silicon film on a surface thereof, diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film, and forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.

公开(公告)号：US20210005505A1

公开(公告)日：2021-01-07

申请号：US16915046

申请日：2020-06-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro WAGATSUMA ,  Kentaro ASAKURA ,  Tetsuya SAITOU ,  Masahisa WATANABE

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/67

Abstract: A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

公开(公告)号：US20230392261A1

公开(公告)日：2023-12-07

申请号：US18032544

申请日：2021-10-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA

IPC: C23C16/458 ,  C23C16/46 ,  C23C16/56 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/56 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/52 ,  C23C16/45565

Abstract: A substrate treatment method of a substrate treatment device, which includes a stage on which a substrate is mounted, a heating element provided on the stage, and a rotation mechanism that rotates the stage, includes: mounting the substrate on the stage; and performing a process on the substrate, wherein the performing the process on the substrate has a plurality of steps, and wherein each of the plurality of steps includes controlling the heating element and controlling the rotation mechanism.

公开(公告)号：US20210398817A1

公开(公告)日：2021-12-23

申请号：US17304116

申请日：2021-06-15

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Masahisa WATANABE

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/306

Abstract: A method of removing a phosphorus-doped silicon film doped with phosphorus, includes: forming a silicon oxide film by oxidizing the phosphorus-doped silicon film in a substrate including the phosphorus-doped silicon film and an undoped silicon film which is not been doped with the phosphorus, wherein at least the phosphorus-doped silicon film is exposed to a surface of the substrate; and selectively etching and removing the silicon oxide film from the silicon oxide film and the undoped silicon film.

公开(公告)号：US20210005482A1

公开(公告)日：2021-01-07

申请号：US16918774

申请日：2020-07-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hachishiro IIZUKA ,  Masahisa WATANABE ,  Yuichiro WAGATSUMA

IPC: H01L21/67

Abstract: A sealing structure of a gas supply line assembly connected to a processing chamber for processing a substrate in a vacuum atmosphere is provided. The sealing structure includes a first pipe member constituting the gas supply line assembly and having an end surface where an opening communicating with the processing chamber is formed, a second pipe member constituting the gas supply line assembly and having a facing surface facing the end surface of the first pipe member, and a sealing member made of an elastomer disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround the opening. The sealing structure further includes a sheet-shaped porous member disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround a vicinity of the sealing member.

公开(公告)号：US20180179625A1

公开(公告)日：2018-06-28

申请号：US15852668

申请日：2017-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Katsuhiko KOMORI ,  Mitsuhiro OKADA ,  Masahisa WATANABE ,  Kazuya TAKAHASHI ,  Kazuki YANO ,  Keisuke FUJITA

IPC: C23C16/24 ,  H01L21/22 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/455

CPC classification number: C23C16/24 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/46 ,  H01L21/205 ,  H01L21/22 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67303

Abstract: There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.