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公开(公告)号：US20180158671A1
公开(公告)日：2018-06-07
申请号：US15835157
申请日：2017-12-07
发明人： Ayuta SUZUKI , Kosuke YAMAMOTO , Kazuyoshi MATSUZAKI , Munehito KAGAYA , Tsuyoshi MORIYA , Tadashi MITSUNARI , Atsushi KUBO
IPC分类号： H01L21/02 , H01L21/67 , C23C16/448 , C23C16/458 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/448 , C23C16/45525 , C23C16/45565 , C23C16/4582 , G05D16/00 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/67017 , H01L21/68742
摘要： A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.
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2.发明申请METHOD FOR FORMING BASE FILM OF GRAPHENE, GRAPHENE FORMING METHOD, AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE 有权用于形成石墨基膜的方法，用于形成石墨的方法和用于形成石墨基膜的装置公开(公告)号：US20160042958A1
公开(公告)日：2016-02-11
申请号：US14819038
申请日：2015-08-05
IPC分类号： H01L21/285 , C23C16/52 , H01L21/67 , C23C16/18 , C23C16/26 , C23C16/46 , C23C16/455
CPC分类号： C23C16/26 , C01B31/0453 , C01B32/186 , C23C16/0218 , C23C16/0281 , C23C16/18 , C23C16/45523 , C23C16/46 , C23C16/56 , H01L21/28556 , H01L21/67103 , H01L21/68742 , H01L21/76864 , H01L21/76876 , H01L23/53276 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
摘要翻译： 形成石墨烯基膜的方法包括：通过使用氢气和氨气的有机金属化合物的化学气相沉积（CVD）在基板上形成作为石墨烯的基膜的金属膜; 将基板加热至除去形成的金属膜中的杂质作为气体的温度; 并将基板加热到金属膜中生长金属晶粒的温度，其中将基板加热到基板的温度达到在金属膜中生长金属晶粒的温度高于 在将衬底加热时的衬底的温度作为气体除去形成的金属膜中包含的杂质的温度。
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公开(公告)号：US20220403515A1
公开(公告)日：2022-12-22
申请号：US17756094
申请日：2020-11-12
发明人： Munehito KAGAYA
IPC分类号： C23C16/455 , C23C16/44 , C23C16/34 , C23C16/52 , C23C16/505 , H01L21/02 , H01J37/32
摘要： A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.
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公开(公告)号：US20220333249A1
公开(公告)日：2022-10-20
申请号：US17754373
申请日：2020-09-29
发明人： Munehito KAGAYA
摘要： A substrate processing method and a substrate processing device capable of obtaining good embedding characteristics are provided. The substrate processing method includes: embedding a first insulating film in a recess of a substrate by repeating forming an adsorption layer on the substrate by supplying a silicon-containing gas and causing plasma of a reaction gas to react with the adsorption layer by generating the plasma of the reaction gas; and etching the first insulating film by generating plasma of an etching gas, wherein a shape of the first insulating film embedded in the recess after etching is controlled by controlling plasma generation parameters in the causing the plasma to react with the adsorption layer.
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公开(公告)号：US20160075560A1
公开(公告)日：2016-03-17
申请号：US14947659
申请日：2015-11-20
CPC分类号： C01B32/186 , C01B2204/32 , C23C16/0281 , C23C16/26 , C23C16/452 , C23C16/45565 , C23C16/45574
摘要： A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.
摘要翻译： 能够增加石墨烯每个畴的尺寸的石墨烯制造方法。 一种激活形成在晶片上的催化剂金属层的等离子体CVD膜形成装置; 将其改变为活化的催化剂金属层; 在与晶片相对的空间中通过等离子体分解C2H4气体作为低反应性含碳气体; 并通过空间中的热量将C2H2气体分解为高反应性含碳气体。
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公开(公告)号：US20230077599A1
公开(公告)日：2023-03-16
申请号：US17931936
申请日：2022-09-14
发明人： Yuji OTSUKI , Munehito KAGAYA , Yusuke SUZUKI
IPC分类号： H01L21/02 , H01J37/32 , C23C16/34 , C23C16/455
摘要： There is provided a film forming method of forming a film in a recess formed on a surface of a substrate. The film forming method includes: forming an adsorption-inhibiting region by supplying an adsorption-inhibiting gas to the substrate; adsorbing a silicon-containing gas to a region other than the adsorption-inhibiting region by supplying the silicon-containing gas to the substrate; and forming a silicon nitride film by exposing the substrate to a nitrogen-containing gas so that the nitrogen-containing gas reacts with the adsorbed silicon-containing gas, wherein the adsorbing the silicon-containing gas includes controlling a dose amount of the silicon-containing gas to be supplied to be equal to or greater than an adsorption saturation amount of the silicon-containing gas to be adsorbed on the substrate on which no adsorption-inhibiting region is formed.
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公开(公告)号：US20210301402A1
公开(公告)日：2021-09-30
申请号：US17265288
申请日：2019-07-29
发明人： Yusuke SUZUKI , Tsuyoshi MORIYA , Tadashi MITSUNARI , Shinya IWASHITA , Yoshinori MORISADA , Naotaka NORO , Munehito KAGAYA , Satoshi TANAKA
IPC分类号： C23C16/52 , C23C16/50 , C23C16/455
摘要： A film forming apparatus includes: a processing container; a support mechanism configured to support a substrate to be capable of being raised and lowered; a first gas supplier configured to supply a first gas to a front surface of the substrate supported on the support mechanism; a second gas supplier configured to supply a second gas to a rear surface of the substrate supported on the support mechanism; and a third gas supplier configured to supply a third gas to at least one of the front surface and the rear surface of the substrate supported on the support mechanism.
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8.发明申请Organic Semiconductor Film, Method for Manufacturing Same, and Transistor Structure 审中-公开有机半导体膜，其制造方法和晶体管结构公开(公告)号：US20160118589A1
公开(公告)日：2016-04-28
申请号：US14895404
申请日：2014-05-27
发明人： Munehito KAGAYA , Takashi MATSUMOTO , Taiki KATO
CPC分类号： H01L51/0056 , C07C2/76 , C07C13/64 , C07C13/70 , C07C2523/46 , C07C2523/52 , C07C2523/72 , C07C2523/75 , C07C2523/755 , C08G61/10 , C08G2261/312 , C08G2261/92 , H01L51/001 , H01L51/005 , H01L51/0057 , H01L51/0545 , H01L51/0558
摘要： Provided is an organic semiconductor film with which a desired band gap can be securely achieved. In an ultrahigh vacuum film formation device (10), 5,5′,5″,5′″,5″″,5′″″-hexabromocyclohexa-m-phenylene (CHP) powder is made to sublimate from a fuel cell (12) by the application of heat energy, bromine is made to separate out by causing the CHP molecules to collide with a catalyst metal layer (M) of a substrate (G), and a plurality of generated phenyl radicals are made to mutually bond through Ullmann reactions, thereby forming a two-dimensional network structure of carbon atoms.
摘要翻译： 提供了可以可靠地实现期望带隙的有机半导体膜。 在超高真空成膜装置（10）中，使5,5'，5“，5”“，5”“，5”“ - 六溴环六亚甲基（CHP）粉末从燃料电池 12）通过施加热能，通过使CHP分子与基板（G）的催化剂金属层（M）碰撞而使溴分离，并且使多个产生的苯基相互键合通过 乌尔曼反应，从而形成碳原子的二维网络结构。
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公开(公告)号：US20210398863A1
公开(公告)日：2021-12-23
申请号：US17303920
申请日：2021-06-10
发明人： Yuji OTSUKI , Munehito KAGAYA , Yusuke SUZUKI
IPC分类号： H01L21/66 , G01N21/3563 , G01N21/84
摘要： A film forming method includes: a first measurement process of measuring a substrate on which a pattern including recesses is formed using infrared spectroscopy; a film formation process of forming a film on the substrate after the first measurement process; a second measurement process of measuring the substrate using infrared spectroscopy after the film formation process; and an extraction process of extracting difference data between measurement data obtained in the first measurement process and measurement data obtained in the second measurement process.
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10.发明申请公开(公告)号：US20210217609A1
公开(公告)日：2021-07-15
申请号：US17058975
申请日：2019-05-27
发明人： Munehito KAGAYA
IPC分类号： H01L21/02 , C23C16/455 , C23C16/40 , C23C16/52 , H01J37/32
摘要： [Problem] To provide a technique having high film thickness control performance in the formation of a thin film on a substrate. [Solution] A method for forming a thin film on a substrate employing atomic layer epitaxy method, comprising a step of supplying a precursor that is an aminosilane having one amino group onto the substrate, wherein the time for the supply of the precursor to be employed in the step is shorter than the time required for the adsorption amount of the precursor onto the substrate to be saturated. Because an aminosilane having one amino group is selected as the precursor and the time for the supply is shorter than the time required for the adsorption amount of the precursor to be saturated, it becomes possible to improve the film thickness control performance.
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