公开(公告)号：US07518247B2

公开(公告)日：2009-04-14

申请号：US10536993

申请日：2003-12-01

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

摘要翻译： 存在微观化导致布线结构的电阻增加和电子迁移阻力降低以及耐应力迁移阻力的问题。 本发明提供即使当半导体器件微型化，电子迁移和应力迁移，并且具有高可靠性及其制造方法时，具有低电阻的半导体器件的布线结构。 具有布线或连接插头的半导体装置及其制造方法，所述布线或连接插头由在制造半导体芯片的基板上的绝缘膜中的布线槽或通孔中的金属和碳纳米管的混合物构成， 。

公开(公告)号：US20060091557A1

公开(公告)日：2006-05-04

申请号：US10536993

申请日：2003-12-01

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

公开(公告)号：USRE42040E1

公开(公告)日：2011-01-18

申请号：US12169902

申请日：2004-07-16

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Hiroshi Sunamura

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Hiroshi Sunamura

IPC分类号： G11C11/00

CPC分类号： G11C13/0011 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/1633

摘要： A switching element has an ion conductor capable of conducting metal ions for use in an electrochemical reaction therein, a first electrode and a second electrode which are disposed in contact with said ion conductor and spaced a predetermined distance from each other, and a third electrode disposed in contact with the ion conductor. When a voltage for causing the switching element to transit to an on state is applied to the third electrode, metal is precipitated between the first electrode and the second electrode by metal ions, electrically interconnecting the first electrode and the second electrode. When a voltage for causing the switching element to transit to an off state is applied to the third electrode, the precipitated metal is dissolved to electrically disconnect the first electrode and the second electrode from each other.

摘要翻译： 开关元件具有能够导电金属离子用于其中的电化学反应的离子导体，第一电极和第二电极，它们设置成与所述离子导体接触并彼此隔开预定的距离，第三电极被设置 与离子导体接触。 当用于使开关元件转换到导通状态的电压被施加到第三电极时，金属通过金属离子在第一电极和第二电极之间沉淀，将第一电极和第二电极互连。 当用于使开关元件转移到关闭状态的电压被施加到第三电极时，沉淀的金属被溶解以将第一电极和第二电极彼此电断开。

公开(公告)号：US20090020742A1

公开(公告)日：2009-01-22

申请号：US11814053

申请日：2006-01-16

申请人： Hiroshi Sunamura ,  Naoya Inoue ,  Toshitsugu Sakamoto ,  Hisao Kawaura

发明人： Hiroshi Sunamura ,  Naoya Inoue ,  Toshitsugu Sakamoto ,  Hisao Kawaura

IPC分类号： H01L45/00

CPC分类号： H01L45/1675 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/1625

摘要： The switching element of the present invention is of a configuration that includes: a first electrode (14) and a second electrode (15) provided separated by a prescribed distance; a solid electrolyte layer (16) provided in contact with the first electrode (14) and the second electrode (15); a third electrode (18) that can supply metal ions and that is provided in contact with the solid electrolyte layer (16); and a metal diffusion prevention film (17) that covers points of the surface of the solid electrolyte layer (16) that are not in contact with the first electrode (14), the second electrode (15) or the third electrode (18). This configuration prevents the adverse effect of metal ions upon other elements.

摘要翻译： 本发明的开关元件具有如下结构：第一电极（14）和第二电极（15），隔开规定的距离; 设置成与所述第一电极（14）和所述第二电极（15）接触的固体电解质层（16）。 可以提供与固体电解质层（16）接触的金属离子的第三电极（18）; 以及覆盖与第一电极（14），第二电极（15）或第三电极（18）不接触的固体电解质层（16）的表面的点的金属扩散防止膜（17）。 这种配置防止了金属离子对其它元素的不利影响。

公开(公告)号：US20050127524A1

公开(公告)日：2005-06-16

申请号：US10512571

申请日：2003-04-25

申请人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Hiroshi Sunamura ,  Hisao Kawaura ,  Naohiko Sugibayashi

发明人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Hiroshi Sunamura ,  Hisao Kawaura ,  Naohiko Sugibayashi

IPC分类号： G11C13/02 ,  H01L27/10 ,  H01L45/00 ,  H01L21/8238 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： G11C13/0011 ,  G11C2213/15 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/101 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1633 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same. A solid electrolyte switching device (10, 10′, 20, 20′) comprises a substrate (11) in which surface is coated with an insulation layer, a first interconnection layer (13) set on said substrate (11), an ion supplying layer (17) set on said first interconnection layer (13), a solid electrolyte layer (16) set on said ion supplying layer (17), an interlevel insulating layer (12) having a via hole set to cover said first interconnection layer (13), said ion supplying layer (17), and said solid electrolyte layer (16), a counter electrode layer (15) set to contact said solid electrolyte layer (16) through the via hole of said interlevel insulating layer (12), and a second interconnection layer (14) set to cover said counter electrode layer (15). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer (17) and the counter electrode layer (15), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA (30) makes it possible to provide re-programmable and fast operation FPGA (30). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

公开(公告)号：US06881315B2

公开(公告)日：2005-04-19

申请号：US10207852

申请日：2002-07-31

申请人： Kazuhiro Iida ,  Hisao Kawaura ,  Masakazu Baba ,  Toshitsugu Sakamoto ,  Toru Sano ,  Noriyuki Iguchi

发明人： Kazuhiro Iida ,  Hisao Kawaura ,  Masakazu Baba ,  Toshitsugu Sakamoto ,  Toru Sano ,  Noriyuki Iguchi

IPC分类号： B01L99/00 ,  B01L3/00 ,  G01N15/10 ,  G01N15/14 ,  G01N27/447 ,  G01N30/02 ,  G01N30/28 ,  G01N30/60 ,  C07K1/26

CPC分类号： B01L3/502761 ,  B01L3/502753 ,  B01L2200/0647 ,  B01L2200/0652 ,  B01L2400/086 ,  G01N27/44704 ,  G01N27/44773 ,  G01N30/02 ,  G01N30/6052 ,  G01N2030/285 ,  B01D15/34

摘要： A fractionating apparatus is used for fractionating sample into micro-structures different in size, and includes a fractionating unit formed with a fractionating passage; the fractionating passage is defined in a groove formed in a substrate of the fractionating unit, and pillar patches are formed in the groove at intervals wider than the gap among the pillar patches; while the sample is migrated through the fractionating passage, small-sized DNA molecules are trapped in the pillar patches, and large-sized DNA molecules are smoothly migrated through the wide intervals; this results in that the large-sized DNA molecules reaches the end of the fractionating passage faster than the small-sized DNA molecules without clogging.

摘要翻译： 分馏装置用于将样品分级成尺寸不同的微结构，并且包括由分馏通道形成的分馏单元; 分馏通道限定在形成在分馏单元的基板中的槽中，并且在凹槽中以比柱状体之间的间隙宽的间隔形成柱贴片; 当样品通过分馏通道迁移时，小尺寸的DNA分子被捕获在柱状贴片中，大尺寸的DNA分子通过宽间隔平滑地迁移; 这导致大尺寸DNA分子比小尺寸DNA分子更快地到达分级通道的末端而没有堵塞。

公开(公告)号：US07964867B2

公开(公告)日：2011-06-21

申请号：US11813075

申请日：2005-12-22

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura

IPC分类号： H01L29/10

CPC分类号： G11C13/0028 ,  G11C13/0023 ,  G11C13/02 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/105 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/145 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/1675 ,  Y10T29/49105

摘要： The switching element of the present invention includes an ion conduction layer (40) capable of conducting metal ions, a first electrode (21) and a second electrode (31) provided in contact with the ion conduction layer (40), and a third electrode (35) provided in contact with the ion conduction layer (40) and capable of supplying metal ions, and is of a configuration in which the area over which the first electrode (21) contacts the ion conduction layer (40) is smaller than the area over which the second electrode (31) contacts the ion conduction layer (40). The use of this configuration decreases the leak current in the OFF state.

摘要翻译： 本发明的开关元件包括能够导电金属离子的离子传导层（40），与离子传导层（40）接触设置的第一电极（21）和第二电极（31），以及第三电极 （35），其与离子传导层（40）接触并且能够提供金属离子，并且具有其中第一电极（21）与离子传导层（40）接触的区域的结构小于 第二电极（31）与离子传导层（40）接触的区域。 这种配置的使用减少了处于OFF状态的漏电流。

公开(公告)号：US20100133501A1

公开(公告)日：2010-06-03

申请号：US12295282

申请日：2007-03-26

申请人： Toshitsugu Sakamoto ,  Noriyuki Iguchi ,  Naoki Banno ,  Hisao Kawaura

发明人： Toshitsugu Sakamoto ,  Noriyuki Iguchi ,  Naoki Banno ,  Hisao Kawaura

IPC分类号： H01L45/00 ,  H01L29/12 ,  H01L21/34 ,  H01L21/16

CPC分类号： H01L45/085 ,  G11C13/0009 ,  G11C13/02 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

摘要： A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer 54 capable of conducting metal ions, first electrode 49 arranged in contact with the ion conductive layer, and second electrode 58 for supplying metal ions to the ion conductive layer, wherein an oxygen absorption layer 55 which contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.

摘要翻译： 本发明的开关元件利用电化学反应进行操作，并且包括能够导电金属离子的离子导电层54，与离子传导层接触地布置的第一电极49和用于向离子提供金属离子的第二电极58 导电层，其中形成与第二电极接触的含有比第二电极更易于氧化的材料的氧吸收层55。

公开(公告)号：US07586091B2

公开(公告)日：2009-09-08

申请号：US10549587

申请日：2004-03-15

申请人： Katsutoshi Takahashi ,  Kazuhiro Iida ,  Masakazu Baba ,  Noriyuki Iguchi ,  Toru Sano ,  Hisao Kawaura ,  Toshitsugu Sakamoto ,  Wataru Hattori ,  Hiroko Someya

发明人： Katsutoshi Takahashi ,  Kazuhiro Iida ,  Masakazu Baba ,  Noriyuki Iguchi ,  Toru Sano ,  Hisao Kawaura ,  Toshitsugu Sakamoto ,  Wataru Hattori ,  Hiroko Someya

IPC分类号： H01J49/00

CPC分类号： H01J49/0418 ,  B01L3/502746 ,  B01L3/502753 ,  B01L2200/0663 ,  B01L2200/10 ,  B01L2300/0681 ,  B01L2300/0816 ,  B01L2300/16 ,  B01L2400/086 ,  G01N1/22 ,  G01N30/84 ,  G01N2030/8452

摘要： After a sample is previously separated into plural components in a channel formed in a microchip (353), the channel is irradiated along a separation direction with a laser beam from a laser oscillator (361) to sequentially ionize each fraction separated in the channel. The ionized fraction is detected by a mass spectrometry unit (363) and analyzed by an analytical result analyzing unit (371). The analytical result is stored in a memory (369) while associated with position information in a driver control unit (367) and information on laser beam irradiation condition in a laser control unit (373), and the analytical result is imaged by an imaging unit (375). The imaged analytical result is displayed on a display (377).

摘要翻译： 在将样品预先分离成在微芯片（353）中形成的通道中的多个部件之后，通过激光振荡器（361）的激光束沿着分离方向照射通道，以顺序地电离通道中分离的每个部分。 通过质谱分析单元（363）检测离子化分数，用分析结果分析单元（371）进行分析。 分析结果与激光控制单元（373）中的驱动器控制单元（367）中的位置信息和激光束照射条件的信息相关联地存储在存储器（369）中，并且分析结果由成像单元 （375）。 成像分析结果显示在显示器上（377）。

公开(公告)号：US20080211096A1

公开(公告)日：2008-09-04

申请号：US11813072

申请日：2005-12-22

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura

IPC分类号： H01L23/48

CPC分类号： H01L27/11803 ,  H01L27/105 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

摘要： A switching element is of a configuration that includes: an ion conduction layer (40) for conducting metal ions, a first electrode (21) and a second electrode (31) provided in contact with the ion conduction layer, a third electrode (35) that can supply metal ions to the ion conduction layer, and a diffusion prevention layer (90) provided between the ion conduction layer (40) and the third electrode (35) for preventing the diffusion of metal ions from the third electrode (35) to the ion conduction layer (40). By adopting this configuration, the set state of a switch can be maintained with greater stability.

摘要翻译： 开关元件具有：用于导电金属离子的离子传导层（40），与离子传导层接触地设置的第一电极（21）和第二电极（31），第三电极（35） 可以向离子传导层供给金属离子，以及设置在离子传导层（40）与第三电极（35）之间的扩散防止层（90），用于防止金属离子从第三电极（35）扩散到 离子传导层（40）。 通过采用这种配置，可以保持开关的设定状态，同时具有更大的稳定性。