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    Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen
    1.
    发明授权
    Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen 失效
    具有由虹膜或钌形成的电容器电极和一定量的氧的半导体器件

    公开(公告)号：US6015989A

    公开(公告)日：2000-01-18

    申请号：US770510

    申请日：1996-12-20

    申请人： Tsuyosi Horikawa ,  Tetsuro Makita ,  Takeharu Kuroiwa ,  Noboru Mikami ,  Teruo Shibano

    发明人： Tsuyosi Horikawa ,  Tetsuro Makita ,  Takeharu Kuroiwa ,  Noboru Mikami ,  Teruo Shibano

    IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L27/10852 ,  H01L28/60

    摘要： A semiconductor device includes a semiconductor substrate having a major surface; a first interlayer insulating film formed on the semiconductor substrate and having an opening defined therein so as to open at the major surface of the semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening; a lower capacitor electrode connected electrically with the major surface of the semiconductor substrate through the connecting member; a capacitor dielectric film formed on the lower capacitor electrode; an upper capacitor electrode formed on the capacitor dielectric film; and a second interlayer insulating film formed on the capacitor upper electrode. The lower capacitor electrode referred to above is made of a principal component selected from the group consisting of ruthenium and iridium and contains oxygen in a quantity of 0.001 to 0.1% by atom and/or at least one impurity element in a quantity of 0.1 to 5% by atom. The impurity element is selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum.

    摘要翻译： 半导体器件包括具有主表面的半导体衬底; 形成在所述半导体衬底上并具有限定在其中的开口以在所述半导体衬底的主表面上开口的第一层间绝缘膜; 以Si为主要成分并嵌入开口的连接件; 通过连接构件与半导体衬底的主表面电连接的下电容器电极; 形成在下电容器电极上的电容器电介质膜; 形成在电容器电介质膜上的上电容器电极; 以及形成在电容器上电极上的第二层间绝缘膜。 上述下部电容器电极由选自钌和铱的主要成分制成，并且含有0.001至0.1原子％的氧和/或0.1至5的至少一种杂质元素 按原子计。 杂质元素选自钛，铬，钨，钴，钯和钼。

    Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium
    3.
    发明授权
    Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium 失效
    制造半导体器件的方法，其包括具有由铱或钌形成的下电极的电容器

    公开(公告)号：US06420191B2

    公开(公告)日：2002-07-16

    申请号：US09768552

    申请日：2001-01-25

    申请人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Tetsuro Makita ,  Noboru Mikami ,  Teruo Shibano

    发明人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Tetsuro Makita ,  Noboru Mikami ,  Teruo Shibano

    IPC分类号： H01G706

    CPC分类号： H01L28/60 ,  H01L27/10852 ,  H01L28/55

    摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.

    摘要翻译： 诸如包括电容器的DRAM的半导体器件，其中电容器的下电极是金属电极，金属电极主要由钌或铱组成，并且通过没有氧化物层的材料直接连接到电容器电介质膜 金属电极形成在金属电极的表面上。 与使用铂形成电极的常规情况相比，由铱或钌制成的下电极可以容易地被处理，并且当形成电容器电介质膜时也不能被氧化，因此可以防止电容的减小。

    Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element
    9.
    发明授权
    Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element 失效
    用含有卤素和惰性元素的等离子体气体蚀刻具有高各向异性的晶片的方法

    公开(公告)号：US5304775A

    公开(公告)日：1994-04-19

    申请号：US710988

    申请日：1991-06-06

    申请人： Nobuo Fujiwara ,  Kyusaku Nishioka ,  Teruo Shibano

    发明人： Nobuo Fujiwara ,  Kyusaku Nishioka ,  Teruo Shibano

    IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B23K9/00

    CPC分类号： H01L21/31111 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32137

    摘要： Fine processing is performed by using gas which contains halogen in such a manner that halogen ions contributing to an etching process and ions of a light element, the mass of which is smaller than that of the halogen ion and which does not react with a semiconductor wafer, are present in a plasma generated due to electron cyclotron resonance. Since energy in the plasma is in inverse proportion to the mass, the disorder motion of the halogen ions having large mass can be restrained. Therefore, the halogen ions can be made perpendicularly incident upon the surface of the semiconductor wafer. Consequently, etching process revealing high anisotropy can be performed.

    摘要翻译： 通过使用含有卤素的气体，使得有助于蚀刻工艺的卤素离子和轻质元素的离子质量小于卤素离子的离子并且不与半导体晶片反应来进行精细加工 存在于由于电子回旋共振而产生的等离子体中。 由于等离子体中的能量与质量成反比，所以可以抑制具有大质量的卤素离子的无序运动。 因此，卤素离子可以垂直入射在半导体晶片的表面上。 因此，可以进行显示高各向异性的蚀刻工艺。

    Semiconductor wafer treating device utilizing ECR plasma
    10.
    发明授权
    Semiconductor wafer treating device utilizing ECR plasma 失效
    采用ECR等离子体的半导体晶片处理装置

    公开(公告)号：US4915979A

    公开(公告)日：1990-04-10

    申请号：US279016

    申请日：1988-12-02

    申请人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

    发明人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

    CPC分类号： H01J37/32357

    摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

    摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。 将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。 因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。 因此，提高了晶片上的处理的均匀性。