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公开(公告)号:US10714528B2
公开(公告)日:2020-07-14
申请号:US16178483
申请日:2018-11-01
Applicant: XINTEC INC.
Inventor: Hsin Kuan , Shih-Kuang Chen , Chin-Ching Huang , Chia-Ming Cheng
IPC: H01L27/146 , H01L23/00 , H01L23/31 , H01L21/56
Abstract: A chip package includes a chip structure, a molding material, a conductive layer, a redistribution layer, and a passivation layer. The chip structure has a front surface, a rear surface, a sidewall, a sensing area, and a conductive pad. The molding material covers the rear surface and the sidewall. The conductive layer extends form the conductive pad to the molding material located on the sidewall. The redistribution layer extends form the molding material that is located on the rear surface to the molding material that is located on the sidewall. The redistribution layer is in electrical contact with an end of the conductive layer facing away from the conductive pad. The passivation layer is located on the molding material and the redistribution layer. The passivation layer has an opening, and a portion of the redistribution layer is located in the opening.
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2.
公开(公告)号:US20130168868A1
公开(公告)日:2013-07-04
申请号:US13727976
申请日:2012-12-27
Applicant: Xintec Inc.
Inventor: Yeh-Shih Ho , Hsin Kuan , Long-Sheng Yeou , Tsang-Yu Liu , Chia-Ming Cheng
CPC classification number: H01L21/82 , B81B7/007 , B81B2207/096 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/14 , H01L23/147 , H01L24/08 , H01L24/24 , H01L24/80 , H01L24/82 , H01L24/92 , H01L24/97 , H01L2221/68304 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68368 , H01L2224/08145 , H01L2224/08225 , H01L2224/24011 , H01L2224/24051 , H01L2224/24146 , H01L2224/80006 , H01L2224/92 , H01L2224/97 , H01L2924/1461 , H01L2224/82 , H01L2224/80 , H01L21/78
Abstract: A fabrication method of a semiconductor stack structure mainly includes: singulating a wafer of a first specification into a plurality of chips; rearranging the chips into a second specification of a wafer so as to stack the chips on a substrate of the second specification through a plurality of blocks; forming a redistribution layer on the chips; and performing a cutting process to obtain a plurality of semiconductor stack structures. Therefore, the present invention allows a wafer of a new specification to be processed by using conventional equipment without the need of new factory buildings or equipment. As such, chip packages can be timely supplied to meet the replacement speed of electronic products.
Abstract translation: 半导体堆叠结构的制造方法主要包括:将第一规格的晶片分割成多个芯片; 将芯片重新排列成晶片的第二规格,以通过多个块将芯片堆叠在第二规格的基板上; 在芯片上形成再分配层; 并执行切割处理以获得多个半导体堆叠结构。 因此,本发明允许通过使用常规设备来处理新规格的晶片,而不需要新的工厂建筑物或设备。 因此,可以及时提供芯片封装以满足电子产品的更换速度。
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公开(公告)号:US10109663B2
公开(公告)日:2018-10-23
申请号:US15258594
申请日:2016-09-07
Applicant: XINTEC INC.
Inventor: Yu-Lung Huang , Tsang-Yu Liu , Yi-Ming Chang , Hsin Kuan
IPC: H01L27/146
Abstract: A chip package including a substrate is provided. The substrate has a first surface and a second surface opposite thereto. The substrate includes a sensing region. A cover plate is on the first surface and covers the sensing region. A shielding layer covers a sidewall of the cover plate and extends towards the second surface. The shielding layer has an inner surface adjacent to the cover plate and has an outer surface away from the cover plate. The length of the outer surface extending towards the second surface is less than that of the inner surface extending towards the second surface, and is not less than that of the sidewall of the cover plate. A method of forming the chip package is also provided.
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公开(公告)号:US10347616B2
公开(公告)日:2019-07-09
申请号:US15590302
申请日:2017-05-09
Applicant: XINTEC INC.
Inventor: Hsin Kuan , Chin-Ching Huang , Chia-Ming Cheng
IPC: H01L25/16 , H01L31/0203 , H01L23/538 , H01L23/00 , H01L27/146 , H01L23/051
Abstract: A chip package includes a sensing chip, a computing chip, and a protective layer annularly surrounding the sensing chip and the computing chip. The sensing chip has a first conductive pad, a sensing element, a first surface and a second surface opposite to each other. And the sensing element is disposed on the first surface. The computing chip has a second conductive pad and a computing element. The protective layer is formed by lamination and at least exposes the sensing element. The chip package further includes a conductive layer underneath the second surface of the sensing chip and extending to be in contact with the first conductive pad and the second conductive pad.
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公开(公告)号:US09761555B2
公开(公告)日:2017-09-12
申请号:US14604525
申请日:2015-01-23
Applicant: XINTEC INC.
Inventor: Jiun-Yen Lai , Yu-Wen Hu , Bai-Yao Lou , Chia-Sheng Lin , Yen-Shih Ho , Hsin Kuan
IPC: H01L31/00 , H01L23/00 , H01L23/522 , H01L49/02
CPC classification number: H01L24/81 , H01L23/5227 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/48 , H01L28/10 , H01L2224/03462 , H01L2224/0347 , H01L2224/03902 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05005 , H01L2224/05007 , H01L2224/05022 , H01L2224/05026 , H01L2224/05027 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05562 , H01L2224/05564 , H01L2224/05571 , H01L2224/05583 , H01L2224/05644 , H01L2224/13021 , H01L2224/1308 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13562 , H01L2224/13644 , H01L2224/48 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/014
Abstract: A manufacturing method of a passive component structure includes the following steps. A protection layer is formed on a substrate, and bond pads of the substrate are respectively exposed through protection layer openings. A conductive layer is formed on the bond pads and the protection layer. A patterned photoresist layer is formed on the conductive layer, and the conductive layer adjacent to the protection layer openings is exposed through photoresist layer openings. Copper bumps are respectively electroplated on the conductive layer. The photoresist layer and the conductive layer not covered by the copper bumps are removed. A passivation layer is formed on the copper bumps and the protection layer, and at least one of the copper bumps is exposed through a passivation layer opening. A diffusion barrier layer and an oxidation barrier layer are chemically plated in sequence on the copper bump.
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6.
公开(公告)号:US09177862B2
公开(公告)日:2015-11-03
申请号:US13727976
申请日:2012-12-27
Applicant: Xintec Inc.
Inventor: Yen-Shih Ho , Hsin Kuan , Long-Sheng Yeou , Tsang-Yu Liu , Chia-Ming Cheng
IPC: H01L21/56 , H01L23/498 , H01L21/78 , H01L23/48 , H01L23/28 , H01L21/82 , H01L23/14 , H01L21/683 , H01L21/768 , B81B7/00 , H01L23/00
CPC classification number: H01L21/82 , B81B7/007 , B81B2207/096 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/14 , H01L23/147 , H01L24/08 , H01L24/24 , H01L24/80 , H01L24/82 , H01L24/92 , H01L24/97 , H01L2221/68304 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68368 , H01L2224/08145 , H01L2224/08225 , H01L2224/24011 , H01L2224/24051 , H01L2224/24146 , H01L2224/80006 , H01L2224/92 , H01L2224/97 , H01L2924/1461 , H01L2224/82 , H01L2224/80 , H01L21/78
Abstract: A fabrication method of a semiconductor stack structure mainly includes: singulating a wafer of a first specification into a plurality of chips; rearranging the chips into a second specification of a wafer so as to stack the chips on a substrate of the second specification through a plurality of blocks; forming a redistribution layer on the chips; and performing a cutting process to obtain a plurality of semiconductor stack structures. Therefore, the present invention allows a wafer of a new specification to be processed by using conventional equipment without the need of new factory buildings or equipment. As such, chip packages can be timely supplied to meet the replacement speed of electronic products.
Abstract translation: 半导体堆叠结构的制造方法主要包括:将第一规格的晶片分割成多个芯片; 将芯片重新排列成晶片的第二规格,以通过多个块将芯片堆叠在第二规格的基板上; 在芯片上形成再分配层; 并执行切割处理以获得多个半导体堆叠结构。 因此,本发明允许通过使用常规设备来处理新规格的晶片,而不需要新的工厂建筑物或设备。 因此,可以及时提供芯片封装以满足电子产品的更换速度。
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