公开(公告)号：US5876819A

公开(公告)日：1999-03-02

申请号：US554509

申请日：1995-11-07

申请人： Yasuhiro Kimura ,  Keiji Yamauchi ,  Hidekazu Yamamoto ,  Shigehisa Yamamoto ,  Masafumi Katsumata ,  Yasukazu Mukogawa ,  Hajime Watanabe

发明人： Yasuhiro Kimura ,  Keiji Yamauchi ,  Hidekazu Yamamoto ,  Shigehisa Yamamoto ,  Masafumi Katsumata ,  Yasukazu Mukogawa ,  Hajime Watanabe

IPC分类号： C30B33/00 ,  G03F9/00 ,  H01L23/544 ,  B32B3/02

CPC分类号： C30B29/06 ,  C30B33/00 ,  G03F9/7003 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/975 ,  Y10T428/21 ,  Y10T428/216 ,  Y10T428/219

摘要： A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.

摘要翻译： 获得了不降低有效使用面积和机械强度以及抗蚀剂膜厚度的不均匀性的半导体衬底及其制造和使用方法。 在硅晶片的预定区域处形成用于检测具有整个圆形轮廓的外周的硅晶片的晶体取向的检测标记。 半导体晶片的晶体取向可以容易地被检测到外周仍然采取圆形轮廓。 因此，可以避免在具有取向平面或缺口的常规半导体衬底中遇到的各种问题，例如机械强度降低和有效使用面积，以及抗蚀剂膜的不均匀性。

公开(公告)号：US5928786A

公开(公告)日：1999-07-27

申请号：US595145

申请日：1996-02-01

申请人： Yasukazu Mukogawa ,  Yasuhiro Kimura

发明人： Yasukazu Mukogawa ,  Yasuhiro Kimura

IPC分类号： C23C8/10 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/76 ,  H01L27/12 ,  H01L29/78 ,  B32B9/00

CPC分类号： H01L21/28211 ,  C23C8/10 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  Y10T428/31

摘要： A monocrystalline silicon wafer is improved so as not to cause enhanced oxidation at the time of forming a gate oxide film. The monocrystalline silicon wafer includes a monocrystalline silicon substrate. The monocrystalline silicon substrate has potassium concentration of at most 2.times.10.sup.11 atoms/cm.sup.2 at an outer surface thereof.

摘要翻译： 提高了单晶硅晶片，以便在形成栅极氧化膜时不会引起增强的氧化。 单晶硅晶片包括单晶硅衬底。 单晶硅衬底在其外表面具有至多2×10 11原子/ cm 2的钾浓度。

公开(公告)号：US4786473A

公开(公告)日：1988-11-22

申请号：US911353

申请日：1986-09-24

申请人： Yasukazu Mukogawa ,  Katsuhikoa Tamura ,  Takaaki Fukumoto

发明人： Yasukazu Mukogawa ,  Katsuhikoa Tamura ,  Takaaki Fukumoto

IPC分类号： G01N15/02 ,  G01N15/06 ,  G01N15/14 ,  G01N33/18

CPC分类号： G01N15/06 ,  G01N2015/0662 ,  Y10T436/118339

摘要： An apparatus for measuring the concentration of solids in a flow of water is described. Water in a sampling pipe 2 is divided into two paths by a branch pipe. Water flowing through respective paths then passes through respective filters having different pore sizes. Then, the flow rates of the water passing through each of the filters 9a and 9b is measured by flow meters. An operation circuit successively calculates the relative ratio of the time dependent change of the output from each of the flow meters based on the outputs from each of the flow meters 10a and 10b. The successive ratios are indirectly related to the concentration of solids in the stream large enough to be captured by the smallest pore size filter.

摘要翻译： 描述了用于测量水流中固体浓度的装置。 采样管2中的水由分支管道分成两条路径。 然后流过相应路径的水通过具有不同孔径的相应过滤器。 然后，通过流量计测量通过每个过滤器9a和9b的水的流量。 操作电路根据每个流量计10a和10b的输出，连续地计算每个流量计的输出的时间相关变化的相对比例。 连续的比率间接地与流中的固体的浓度相关，其足够大以被最小的孔径过滤器捕获。

公开(公告)号：US4765963A

公开(公告)日：1988-08-23

申请号：US911354

申请日：1986-09-24

申请人： Yasukazu Mukogawa ,  Katsuhiko Tamura ,  Takaaki Fukumoto

发明人： Yasukazu Mukogawa ,  Katsuhiko Tamura ,  Takaaki Fukumoto

IPC分类号： G01N15/06 ,  G01N31/02 ,  G01N33/18 ,  G01N35/08

CPC分类号： G01N15/06 ,  G01N2015/0662 ,  Y10T436/117497

摘要： A sampled flow of water is extracted from a water conduit 1 carrying impure water by a sampling tube 2, the pressure at a point in the sampling tube is kept constant by a constant pressure maintaining valve 4, and the sampled water passed through a filter 7. The flow rate of sampled water passing through the filter 7 is measured by a flow meter 8. A value corresponding to the total amount or level of impurity in the sampled water is evaluated by an operation circuit 9 at a prescribed time interval, based on the time-dependent change in the result of measurement of the flow meter 8 and the total amount or level of impurities in pure water is thus measured indirectly.

摘要翻译： 从采样管2携带不纯水的水管道1抽取取样的水流，采样管中的一点处的压力通过恒压保持阀4保持恒定，并且取样的水通过过滤器7 通过流量计8测量通过过滤器7的取样水的流量。对应于取样水中的杂质总量或水平的值，由操作电路9以规定的时间间隔基于 因此间接地测量流量计8的测量结果的时间依赖性变化和纯水中杂质的总量或水平。

公开(公告)号：US5844850A

公开(公告)日：1998-12-01

申请号：US619396

申请日：1996-03-21

申请人： Toshikazu Tsutsui ,  Tohru Koyama ,  Fumihito Ohta ,  Yasukazu Mukogawa ,  Masaaki Furuta ,  Yohji Mashiko

发明人： Toshikazu Tsutsui ,  Tohru Koyama ,  Fumihito Ohta ,  Yasukazu Mukogawa ,  Masaaki Furuta ,  Yohji Mashiko

IPC分类号： G01R31/26 ,  G01N21/88 ,  G01N21/94 ,  G01N21/956 ,  G01R31/28 ,  G06F11/22 ,  H01L21/02 ,  H01L21/66

CPC分类号： H01L22/20 ,  G01R31/2831 ,  G06F11/2205 ,  H01L2924/0002

摘要： Data containing defect position coordinates obtained based on the result of physical inspection of a foreign material, a defect and the like at a surface of a semiconductor wafer by a defect inspecting apparatus is stored in storage means. Data of physical position coordinates obtained based on fail bit data from a tester is stored in storage means. Data indicating an additional failure region is produced by additional failure region estimating means based on the fail bit data, and is stored in storage means. Collating means produces data of corrected physical position coordinates by adding the data of limitation by failure mode stored in storage means to the data of physical position coordinates stored in storage means, and collates the data of corrected physical position coordinates with data of defect position coordinates stored in storage means. Accordingly, accuracy in collation is improved, and therefore, a failure can be analyzed even if the failure is not caused by a defect located at an address of the failure obtained by the fail bit data but by a defect relating to the defect located at the address of a failure. As a result, accuracy in estimation is improved.

摘要翻译： 通过缺陷检查装置将基于异物的物理检查结果，缺陷等的缺陷位置坐标数据存储在半导体晶片的表面。 基于来自测试器的故障位数据获得的物理位置坐标的数据被存储在存储装置中。 指示附加故障区域的数据由附加故障区域估计装置基于故障位数据产生，并存储在存储装置中。 整理装置通过将存储在存储装置中的故障模式的限制数据与存储在存储装置中的物理位置坐标的数据相加来产生经校正的物理位置坐标的数据，并将校正的物理位置坐标的数据与存储的缺陷位置坐标数据进行比较 在存储装置中。 因此，排序规则的精度提高，因此，即使故障不是由故障位数据所获得的故障的地址的缺陷引起的，也是由位于 失败的地址 结果，提高了估计精度。

公开(公告)号：US5511569A

公开(公告)日：1996-04-30

申请号：US160753

申请日：1993-12-03

申请人： Yasukazu Mukogawa

发明人： Yasukazu Mukogawa

IPC分类号： B08B3/04 ,  B08B3/08 ,  H01L21/00 ,  H01L21/304 ,  B08B3/02

CPC分类号： H01L21/67057 ,  B08B3/04 ,  B08B3/08 ,  Y10S134/902

摘要： An improved cleaning apparatus preventing new cleaning chemicals form contamination at the time of exchanging used cleaning chemicals with the new chemicals is provided. The apparatus includes a cleaning chemicals tank storing new chemicals and a cleaning vessel. A first cleaning chemicals supply conduit supplying new chemicals from tank into vessel is coupled to cleaning chemicals tank. A waste fluid conduit externally discharging used cleaning chemicals is provided at the bottom of vessel. Vessel is provided with wetting agent supply means supplying a wetting agent to wet the inner wall surface 8a of vessel.

摘要翻译： 提供了一种改进的清洁装置，其防止在用新的化学品更换使用的清洁化学品时新的清洁化学品形成污染。 该设备包括储存新的化学品和清洁容器的清洁化学品罐。 将清洁化学品从罐中提供到容器中的第一个清洁化学品供应管道连接到清洁化学品罐。 在容器的底部设置有外部排出废水的废液管道。 容器具有润湿剂供应装置，其供应润湿剂以润湿容器的内壁表面8a。

公开(公告)号：US06733661B2

公开(公告)日：2004-05-11

申请号：US09930132

申请日：2001-08-16

申请人： Yasukazu Mukogawa ,  Masaharu Hama

发明人： Yasukazu Mukogawa ,  Masaharu Hama

IPC分类号： C02F900

CPC分类号： C02F1/32 ,  C02F1/283 ,  C02F1/42 ,  C02F1/444 ,  C02F1/66 ,  C02F2103/04 ,  C02F2201/326 ,  C02F2209/20 ,  C02F2209/22 ,  Y10S210/90

摘要： It is an object of the present invention to provide an ultrapure water producing apparatus with reduced problems resulting from impurities generated after replacement of unit apparatuses. A TOC-UV (1), a CP (2) and a UF film (3) are provided in this order from the upstream side of a pure water supply route. Ultrapure water flowing through the UF film (3) is supplied to a use point. A branch route branched from the pure water supply route is provided downstream of the UF film (3). A dissolved oxygen concentration meter (M1) is interposed in the branch route for measuring dissolved oxygen concentration in ultrapure water passed through the UF film (3). The branch route is connected to an oxidant decomposition unit (11). Oxidants included in ultrapure water flowing through the branch route are all converted into DO at the oxidant decomposition unit (11).

摘要翻译： 本发明的目的是提供一种超纯水生产设备，其具有减少由更换单元设备后产生的杂质所导致的问题。提供TOC-UV（1），CP（2）和UF膜（3） 按照这个顺序从纯水供应路线的上游侧。 将流过UF膜（3）的超纯水供给到使用点。 从纯水供给路径分支的分支路径设置在UF膜（3）的下游。 溶解氧浓度计（M1）插入用于测量通过UF膜（3）的超纯水中的溶解氧浓度的分支路径中。 分支路径连接到氧化剂分解单元（11）。 包含在流过分支途径的超纯水中的氧化物在氧化剂分解单元（11）都被转化为DO。

公开(公告)号：US5331193A

公开(公告)日：1994-07-19

申请号：US17164

申请日：1993-02-12

申请人： Yasukazu Mukogawa

发明人： Yasukazu Mukogawa

IPC分类号： H01L27/06 ,  H01L29/360 ,  H01L29/380 ,  H01L29/730

CPC分类号： H01L27/0623

摘要： A semiconductor substrate allowing prevention of the breakdown voltage degradation of a gate oxide film and having a prescribed mechanical strength in order to cope with increase in the diameters of wafers corresponding to reduction in the dimensions of semiconductor devices and improvement in productivity, and a Bi-CMOS semiconductor device allowing electrical characteristics to be maintained in any of a bipolar transistor and a field effect transistor are provided. An epitaxial layer is formed on a silicon wafer formed by means of CZ method. A silicon wafer formed by means of FZ method is joined onto the epitaxial layer. An npn bipolar transistor is formed in the epitaxial layer. An n channel MOS transistor and a p channel MOS transistor are formed in the silicon wafer.

摘要翻译： 一种半导体衬底，其能够防止栅极氧化膜的击穿电压劣化并且具有规定的机械强度，以便对应于半导体器件尺寸的减小对应的晶片直径的增加以及生产率的提高， 提供允许在双极晶体管和场效应晶体管中的任一个中保持电特性的CMOS半导体器件。 在通过CZ法形成的硅晶片上形成外延层。 通过FZ法形成的硅晶片被接合到外延层上。 在外延层中形成npn双极晶体管。 在硅晶片中形成n沟道MOS晶体管和p沟道MOS晶体管。

公开(公告)号：US6009545A

公开(公告)日：1999-12-28

申请号：US182526

申请日：1998-10-30

申请人： Toshikazu Tsutsui ,  Tohru Koyama ,  Fumihito Ohta ,  Yasukazu Mukogawa ,  Masaaki Furuta ,  Yohji Mashiko

发明人： Toshikazu Tsutsui ,  Tohru Koyama ,  Fumihito Ohta ,  Yasukazu Mukogawa ,  Masaaki Furuta ,  Yohji Mashiko

IPC分类号： G01R31/28 ,  G06F11/22 ,  H01L21/66 ,  G06F11/00

CPC分类号： H01L22/20 ,  G01R31/2831 ,  G06F11/2205

摘要： Data containing defect position coordinates obtained based on the result of physical inspection of foreign material, a defect or the like at the surface of a semiconductor wafer by a defect inspecting apparatus is stored. Also stored is data of physical coordinates obtained based on fail bit data from a tester. Data indicating an additional failure region is produced by an additional failure region estimating apparatus based on the fail bit data, and is stored. Collation produces data of corrected physical position coordinates by adding the stored data of limitation by failure mode to the stored data of physical position coordinates, and collates the data of corrected physical position coordinates with stored data of defect position coordinates. Accordingly, accuracy in collation is improved, and failure can be analyzed even if caused not by a defect located at an address of the failure obtained by the fail bit data but by a defect relating to the defect located at the address of a failure.

摘要翻译： 存储包含基于异物的物理检查结果，缺陷检查装置在半导体晶片的表面处的缺陷等的缺陷位置坐标的数据。 还存储了基于来自测试器的故障位数据获得的物理坐标的数据。 指示附加故障区域的数据由基于故障位数据的附加故障区域估计装置产生，并被存储。 通过将存储的故障模式的限制数据与所存储的物理位置坐标的数据相加，校正生成校正的物理位置坐标的数据，并且将校正的物理位置坐标的数据与存储的缺陷位置坐标的数据进行比较。 因此，排序的精度提高，即使不是由故障位数据所获得的故障的地址而是由于位于故障地址处的缺陷引起的缺陷引起的故障也可以被分析。

公开(公告)号：US5942763A

公开(公告)日：1999-08-24

申请号：US925652

申请日：1997-09-09

申请人： Yasukazu Mukogawa

发明人： Yasukazu Mukogawa

IPC分类号： H01L21/02 ,  G01N21/95 ,  H01L23/544 ,  G01N21/86

CPC分类号： G01N21/9501 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002

摘要： A wafer (1) on which an oxide film (3) is formed is disposed on a wafer stage (2), and the surface of the oxide film (3) is irradiated with a laser beam by a laser-beam irradiation unit (4). Then, the laser beam applied to a region having a concave portion (13) is scattered in the surface of the oxide film (3) due to the level difference of the concave portion (13). Accordingly, through a scanning with the laser beam, the scattered light due to the concave portion (13) is received by a scattered-light receptor (5). Subsequently, information on distribution of the scattered light received by the scattered-light receptor (5) is converted into a potential and an OCR process is performed on the potential distribution by an OCR process unit (6), to read the configuration of the concave portion (13) formed in the surface of the oxide film (3) as character information. With this structure, provided is a wafer identification apparatus which is capable of reading an engraved mark on the surface of the wafer with reliability, even if the oxide film and the like is formed on the wafer.

摘要翻译： 在其上形成有氧化膜（3）的晶片（1）设置在晶片载物台（2）上，氧化膜（3）的表面用激光束照射单元（4）照射激光 ）。 然后，施加到具有凹部（13）的区域的激光束由于凹部（13）的高低而在氧化膜（3）的表面被散射。 因此，通过利用激光的扫描，由凹部（13）引起的散射光被散射光受体（5）所接收。 随后，将由散射光接收器（5）接收的散射光的分布信息转换为电位，并通过OCR处理单元（6）对电位分布执行OCR处理，以读取凹部 在氧化膜（3）的表面形成的部分（13）作为字符信息。 利用这种结构，即使在晶片上形成氧化膜等，也可以可靠地读取晶片表面上的雕刻标记的晶片识别装置。