公开(公告)号：US07915068B2

公开(公告)日：2011-03-29

申请号：US12076244

申请日：2008-03-14

申请人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

发明人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

IPC分类号： H01L21/00 ,  H01L27/14 ,  H01L31/0232

CPC分类号： H01G9/20 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/776 ,  Y10S977/777 ,  Y10S977/81 ,  Y10S977/948

摘要： There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

摘要翻译： 公开了以纳米金属晶体的形式制造具有致敏量子点的太阳能电池的方法。 首先，提供第一基板。 然后，在第一基板的一侧上生长硅基膜。 执行图案掩模处理以蚀刻硅基膜的区域。 在从硅基膜暴露的第一基板的区域上设置纳米金属颗粒。 金属电极附接到第一基板的相对侧。 提供第二基板。 在第二基板上生长透明导电膜。 在透明导电膜上生长金属催化膜。 第二基板，透明导电膜和金属催化膜一起形成层压体。 将层压体倒置并设置在第一基板上。 最后，在第一基板和金属催化膜之间提供电解质。

公开(公告)号：US20110027931A1

公开(公告)日：2011-02-03

申请号：US12076244

申请日：2008-03-14

申请人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

发明人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

IPC分类号： H01L31/18

CPC分类号： H01G9/20 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/776 ,  Y10S977/777 ,  Y10S977/81 ,  Y10S977/948

摘要： There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

公开(公告)号：US20100279029A1

公开(公告)日：2010-11-04

申请号：US11907523

申请日：2007-10-12

申请人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

发明人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

IPC分类号： H05H1/24

CPC分类号： B82Y30/00 ,  B22F7/04 ,  B22F9/04 ,  B22F2998/00 ,  B82Y40/00 ,  C23C14/0005 ,  C23C14/18 ,  C23C14/5806 ,  B22F2301/25 ,  B22F2301/255

摘要： There is disclosed a method for coating nanometer metal particles. The step includes three steps. At the first step, a substrate is provided. At the second step, the substrate is coated with a metal layer. At the third step, the metal layer is annealed so that the metal layer is transformed into nanometer metal particles.

摘要翻译： 公开了一种涂覆纳米金属颗粒的方法。 该步骤包括三个步骤。 在第一步骤中，提供基板。 在第二步骤中，衬底被涂覆有金属层。 在第三步骤中，金属层被退火，使得金属层转变成纳米金属颗粒。

公开(公告)号：US07666706B2

公开(公告)日：2010-02-23

申请号：US11987803

申请日：2007-12-04

申请人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

发明人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

IPC分类号： H01L21/00

CPC分类号： H01L31/182 ,  H01L21/02532 ,  H01L21/02667 ,  Y02E10/546 ,  Y02P70/521

摘要： A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p− poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p− poly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.

摘要翻译： 公开了制造薄膜多晶硅太阳能电池的方法。 在该方法中，通过用透明导电ITO膜涂覆玻璃基板来提供ITO玻璃基板。 在ITO玻璃基板上生长非晶硅膜。 在非晶硅膜上生长铝膜。 铝膜和非晶硅膜退火，因此分别转换和交换成铝 - 硅合金膜和p +多晶硅膜。 在低温等离子体沉积工艺中，在p +多晶硅膜上涂覆p多晶硅膜，在p多晶硅膜上涂覆n +多晶硅膜。 在透明导电ITO膜上提供欧姆接触。 其他欧姆接触提供在n +多晶硅膜上。 在n +多晶硅膜上涂布防反射膜。

公开(公告)号：US20090142877A1

公开(公告)日：2009-06-04

申请号：US11987803

申请日：2007-12-04

申请人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

发明人： Yu-Hsiang Huang ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Chien-Te Ku ,  Meng-Chu Chen ,  Zhen-Yu Li

IPC分类号： H01L21/00

CPC分类号： H01L31/182 ,  H01L21/02532 ,  H01L21/02667 ,  Y02E10/546 ,  Y02P70/521

摘要： A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film arte annealed and therefore converted into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p− poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p− poly-crystalline silicon film. An ohm contact is provided on the transparent and conductive ITO film. Other ohm contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.

摘要翻译： 公开了制造薄膜多晶硅太阳能电池的方法。 在该方法中，通过用透明导电ITO膜涂覆玻璃基板来提供ITO玻璃基板。 在ITO玻璃基板上生长非晶硅膜。 在非晶硅膜上生长铝膜。 铝膜和非晶硅膜退火，因此分别转化为铝 - 硅合金膜和p +多晶硅膜。 在低温等离子体沉积工艺中，在p +多晶硅膜上涂覆p多晶硅膜，在p多晶硅膜上涂覆n +多晶硅膜。 在透明导电ITO膜上提供欧姆接触。 在n +多晶硅膜上提供其他欧姆接触。 在n +多晶硅膜上涂布防反射膜。

公开(公告)号：US09099593B2

公开(公告)日：2015-08-04

申请号：US13616299

申请日：2012-09-14

申请人： Zhen-Yu Li ,  Hon-Way Lin ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

发明人： Zhen-Yu Li ,  Hon-Way Lin ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

IPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  F21K99/00 ,  F21S6/00 ,  F21V3/04 ,  F21V7/22 ,  F21Y101/02 ,  H01L21/02 ,  H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  F21V29/74

CPC分类号： H01L33/06 ,  B82Y20/00 ,  F21K9/00 ,  F21S6/00 ,  F21V3/049 ,  F21V7/22 ,  F21V29/74 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L21/02458 ,  H01L21/02507 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/3407 ,  H01S5/34333

摘要： The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.

摘要翻译： 本公开涉及一种照明装置。 照明装置包括n掺杂半导体化合物层，与n掺杂半导体化合物层间隔开的p掺杂半导体化合物层和设置在第一半导体化合物层和第二半导体化合物层之间的多量子阱（MQW） 半导体复合层。 MQW包括多个交替的第一和第二层。 MQW的第一层具有基本均匀的厚度。 第二层相对于与p掺杂半导体化合物层的距离具有渐变厚度。 位于与p掺杂半导体化合物层最相邻的第二层的子集中掺杂有p型掺杂剂。 掺杂的第二层具有相对于从p掺杂半导体层的距离而变化的渐变掺杂浓度水平。

公开(公告)号：US09312432B2

公开(公告)日：2016-04-12

申请号：US13418663

申请日：2012-03-13

申请人： Ming-Hua Lo ,  Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

发明人： Ming-Hua Lo ,  Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

IPC分类号： H01L33/36 ,  H01L33/32 ,  H01L33/02 ,  H01L33/00

CPC分类号： H01L33/025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/36

摘要： The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region.

摘要翻译： 本公开涉及一种装置。 该装置包括包括发光二极管（LED）裸片的光子管芯结构。 在一些实施例中，LED管芯是垂直LED管芯。 LED管芯包括衬底。 p型掺杂的III-V化合物层和n掺杂的III-V化合物层分别设置在衬底上。 在P掺杂的III-V化合物层和n掺杂的III-V化合物层之间设置多量子阱（MQW）层。 p掺杂的III-V化合物层包括具有非指数掺杂浓度特性的第一区域和具有指数掺杂浓度特性的第二区域。 在一些实施例中，使用比第一区域更低的压力形成第二区域。

公开(公告)号：US20140077224A1

公开(公告)日：2014-03-20

申请号：US13616415

申请日：2012-09-14

申请人： Zhen-Yu Li ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo ,  Cindy Huichun Shu ,  Hsin-Chieh Huang

发明人： Zhen-Yu Li ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo ,  Cindy Huichun Shu ,  Hsin-Chieh Huang

IPC分类号： H01L29/12 ,  H01L33/02 ,  H01L21/20 ,  H01L29/165

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L21/02035 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/268 ,  H01L21/30604 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/12 ,  H01L33/20 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/34333

摘要： The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).

摘要翻译： 本公开涉及一种装置。 该装置包括具有前侧与前侧相对的后侧的基板。 基板包括从基板的背面形成的多个开口。 这些开口从平面图中共同地在基板的背面上限定图案。 在一些实施例中，衬底是硅衬底或碳化硅衬底。 与开口垂直对准的硅衬底的部分具有约100微米至约300微米的垂直尺寸。 在硅衬底的正面上形成III-V族化合物层。 III-V族化合物层是发光二极管（LED），激光二极管（LD）和高电子迁移率晶体管（HEMT）之一的组分。

公开(公告)号：US20130240831A1

公开(公告)日：2013-09-19

申请号：US13418663

申请日：2012-03-13

申请人： Ming-Hua Lo ,  Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

发明人： Ming-Hua Lo ,  Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L33/025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/36

摘要： The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region.

摘要翻译： 本公开涉及一种装置。 该装置包括包括发光二极管（LED）裸片的光子管芯结构。 在一些实施例中，LED管芯是垂直LED管芯。 LED管芯包括衬底。 p型掺杂的III-V化合物层和n掺杂的III-V化合物层分别设置在衬底上。 在P掺杂的III-V化合物层和n掺杂的III-V化合物层之间设置多量子阱（MQW）层。 p掺杂的III-V化合物层包括具有非指数掺杂浓度特性的第一区域和具有指数掺杂浓度特性的第二区域。 在一些实施例中，使用比第一区域更低的压力形成第二区域。

公开(公告)号：US20130221320A1

公开(公告)日：2013-08-29

申请号：US13405906

申请日：2012-02-27

申请人： Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

发明人： Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

IPC分类号： H01L33/04

CPC分类号： H01L33/145 ,  H01L21/2654

摘要： The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a plurality of layers. A current blocking layer is embedded in one of the plurality of layers. The current blocking layer is a doped layer. The present disclosure also involves a method of fabricating a light-emitting diode (LED). As a part of the method, an LED is provided. The LED includes a plurality of layers. A patterned mask is then formed over the LED. The patterned mask contains an opening. A dopant is introduced through the opening to a layer of the LED through either an ion implantation process or a thermal diffusion process. As a result of the dopant being introduced, a doped current blocking component is formed to be embedded within the layer of the LED.

摘要翻译： 本公开涉及一种装置。 该装置包括包含多个层的光子管芯结构。 电流阻挡层嵌入在多个层之一中。 电流阻挡层是掺杂层。 本公开还涉及一种制造发光二极管（LED）的方法。 作为该方法的一部分，提供LED。 LED包括多个层。 然后在LED上形成图案化掩模。 图案面具包含开口。 通过离子注入工艺或热扩散工艺将掺杂剂通过开口引入LED层。 作为引入掺杂剂的结果，形成掺杂电流阻挡组分以嵌入LED的层内。