公开(公告)号：US11673796B2

公开(公告)日：2023-06-13

申请号：US17196329

申请日：2021-03-09

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Jengping Lu

IPC: B81B7/00 ,  H01L29/40 ,  H01L29/786 ,  H01L31/0376 ,  H01L31/108

CPC classification number: B81B7/008 ,  H01L29/402 ,  H01L29/78669 ,  H01L29/78696 ,  H01L31/03762 ,  H01L31/108 ,  B81B2201/03 ,  B81B2207/03

Abstract: A device includes a first stage having a first optical switch, a first transistor connected to the first optical switch, and a second transistor connected to the first optical switch and the first transistor. The device also includes a second stage having a second optical switch, a third transistor connected to the second transistor and the second optical switch, and a fourth transistor connected to the second transistor, the second optical switch, and the third transistor.

公开(公告)号：US09507142B2

公开(公告)日：2016-11-29

申请号：US14410211

申请日：2013-06-12

Applicant: SILEX MICROSYSTEMS AB

Inventor： Peter Agren

IPC: G02B26/08 ,  H01L23/48 ,  B81B3/00 ,  B81C1/00 ,  G01D5/24 ,  H01L23/522

CPC classification number: G02B26/0841 ,  B81B3/0021 ,  B81B3/0045 ,  B81B2201/02 ,  B81B2201/03 ,  B81B2203/04 ,  B81C1/00357 ,  B81C1/00619 ,  G01D5/24 ,  G02B26/085 ,  H01L23/481 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.

Abstract translation: 半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。 提供至少一个通过具有第一（16a）和第二（16b）端面的基板延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极， 布置在基板（10）的第一侧（12a）处。 在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b） 在所述基板（10）和所述导电层（19a）之间。 掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。 优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。

公开(公告)号：US20150226066A1

公开(公告)日：2015-08-13

申请号：US14696266

申请日：2015-04-24

Applicant: Lee Ervin

Inventor： Lee Ervin

IPC: F01D1/18 ,  F01D25/14 ,  F01D25/00

CPC classification number: F01D1/18 ,  B81B5/00 ,  B81B2201/03 ,  B81B2201/034 ,  B81B2203/06 ,  F01D25/005 ,  F01D25/14 ,  F03B17/00 ,  Y02E10/20 ,  Y02E10/28

Abstract: A device for converting the kinetic energy of molecules into useful work includes an actuator configured to move within a fluid or gas due to collisions with the molecules of the fluid or gas. The actuator has dimensions that subject it to the Brownian motion of the surrounding molecules. The actuator utilizes objects having multiple surfaces where the different surfaces result in differing coefficients of restitution. The Brownian motion of surrounding molecules produce molecular impacts with the surfaces. Each surface then experiences relative differences in transferred energy from the kinetic collisions. The sum effect of the collisions produces net velocity in a desired direction. The controlled motion can be utilized in a variety of manners to perform work, such as generating electricity or transporting materials.

Abstract translation: 用于将分子的动能转换为有用功的装置包括致动器，其构造成由于与流体或气体的分子碰撞而在流体或气体内移动。 致动器具有使其受到周围分子的布朗运动的尺寸。 致动器利用具有多个表面的物体，其中不同的表面导致不同的恢复系数。 周围分子的布朗运动与表面产生分子冲击。 每个表面然后经历来自动力学碰撞的转移能量的相对差异。 碰撞的总和效应产生所需方向的净速度。 受控运动可以以各种方式用于执行工作，例如发电或运输材料。

公开(公告)号：US09061891B2

公开(公告)日：2015-06-23

申请号：US14508715

申请日：2014-10-07

Applicant: Honeywell International Inc.

Inventor： Ryan Supino ,  Eugen Cabuz ,  Burgess R. Johnson ,  Robert D. Horning

IPC: G01P21/00 ,  B81C1/00 ,  G01D5/34

CPC classification number: B81C1/00134 ,  B81B2201/03 ,  B81C2203/03 ,  G01D5/34 ,  G01P21/00 ,  Y10T29/49002

Abstract: Systems and methods for two degree of freedom dithering for micro-electromechanical system (MEMS) sensor calibration are provided. In one embodiment, a method for a device comprises forming a MEMS sensor layer, the MEMS sensor layer comprising a MEMS sensor and an in-plane rotator to rotate the MEMS sensor in the plane of the MEMS sensor layer. Further, the method comprises forming a first and second rotor layer and bonding the first rotor layer to a top surface and the second rotor layer to the bottom surface of the MEMS sensor layer, such that a first and second rotor portion of the first and second rotor layers connect to the MEMS sensor. Also, the method comprises separating the first and second rotor portions from the first and second rotor layers, wherein the first and second rotor portions and the MEMS sensor rotate about an in-plane axis of the MEMS sensor layer.

Abstract translation: 提供了用于微机电系统（MEMS）传感器校准的两自由度抖动的系统和方法。 在一个实施例中，用于器件的方法包括形成MEMS传感器层，所述MEMS传感器层包括MEMS传感器和面内旋转器以在MEMS传感器层的平面内旋转MEMS传感器。 此外，该方法包括形成第一转子层和第二转子层，并将第一转子层结合到顶表面，将第二转子层结合到MEMS传感器层的底表面，使得第一和第二转子部分的第一和第二转子部分 转子层连接到MEMS传感器。 此外，该方法包括从第一和第二转子层分离第一和第二转子部分，其中第一和第二转子部分和MEMS传感器围绕MEMS传感器层的面内轴线旋转。

公开(公告)号：US11970388B2

公开(公告)日：2024-04-30

申请号：US17550607

申请日：2021-12-14

Applicant: Winbond Electronics Corp.

Inventor： Jin-Neng Wu

IPC: B81B3/00 ,  B81C3/00

CPC classification number: B81B3/0018 ,  B81C3/001 ,  B81B2201/0214 ,  B81B2201/03 ,  B81B2203/033 ,  B81B2207/09

Abstract: A package structure and its manufacturing method are provided. The package structure includes a substrate with a recess, and a first MEMS chip, a first intermediate chip, a second MEMS chip and a first capping plate sequentially formed on the substrate. The lower surface of the first MEMS chip has a first sensor or a microactuator. The upper surface of the second MEMS chip has a second sensor or a microactuator. The first intermediate chip has a through-substrate via, and includes a signal conversion unit, a logic operation unit, a control unit, or a combination thereof. The package structure includes at least one of the first sensor and the second sensor.

公开(公告)号：US20230312337A1

公开(公告)日：2023-10-05

申请号：US18023904

申请日：2021-09-01

Applicant: 3C PROJECT MANAGEMENT LIMITED

Inventor： Gregory John MCAVOY

IPC: B81B7/02 ,  B41J2/14 ,  H10N30/20 ,  B81C1/00 ,  B41J2/045

CPC classification number: B81C1/00246 ,  B41J2/04581 ,  B41J2/14 ,  B81B7/02 ,  H10N30/20 ,  B81B2201/03 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0132 ,  B81C2201/016

Abstract: A method of manufacturing a MEMS device, the MEMS device comprising a movable Micro-Electro-Mechanical piezoelectric component and a CMOS circuit configured to be in conductive communication with the Micro-Electro-Mechanical component. A plurality of CMOS circuit layers are formed on a substrate to form the CMOS circuit, the plurality of CMOS circuit layers comprising a plurality of CMOS passivation and metallisation layers. A portion of at least one of the plurality of CMOS passivation and metallisation layers is removed in a component region of the device. One or more component region layers are formed in place of the removed portion in the component region to form the movable Micro-Electro-Mechanical piezoelectric component. The one or more component region layers are different from the portion of the at least one of the plurality of CMOS passivation and metallisation layers.

公开(公告)号：US20190219193A1

公开(公告)日：2019-07-18

申请号：US15869562

申请日：2018-01-12

Applicant: International Business Machines Corporation

Inventor： Yongchun XIN ,  Jonathan FRY ,  Daniel PIPER ,  Jang SIM

IPC: F16K99/00 ,  B81B7/02 ,  B81C1/00 ,  B01L3/00

CPC classification number: F16K99/0005 ,  B01L3/502769 ,  B01L2200/027 ,  B81B7/02 ,  B81B2201/03 ,  B81B2201/054 ,  B81C1/00119 ,  F16K99/0011 ,  F16K99/0026 ,  F16K2099/0074

Abstract: A micro electrical mechanical system (MEMS) valve is provided. The MEMS valve includes first and second bodies, a medium and a thermal element. The first body defines a first channel and a second channel intersecting the first channel. The second body defines a third channel and is movable within the first channel between first and second positions. When the second body is at the first positions, the second and third channels align and permit flow through the second and third channels. When the second body is at the second positions, the second and third channels misalign and inhibit flow through the second channel. The medium is charged into the first channel at opposite sides of the second body. The thermal element is proximate to the first channel and is operable to cause the medium to drive movements of the second body to the first or the second positions.

公开(公告)号：US20180159446A1

公开(公告)日：2018-06-07

申请号：US15550875

申请日：2016-02-13

Applicant: Guenter BECKMANN

Inventor： Enrico BISCHUR ,  Norbert SCHWESINGER ,  Sandy ZAEHRINGER

IPC: H02N1/08 ,  H02N2/18 ,  H01G7/02 ,  H01H13/28

CPC classification number: H02N1/08 ,  B81B3/0018 ,  B81B2201/03 ,  H01G7/02 ,  H01H13/28 ,  H02N2/181

Abstract: An electrostatic microgenerator having electret films which are arranged above one another in a double layer and each have a metal layer arranged on one side thereof as an electrode. The films are embedded in a hermetically sealed casing in a loosely wound manner. Applying pressure to a first desired pressure surface, which is provided on the outside parallel to the capacitor plates formed in this manner, makes it possible to generate an electrical voltage by changing the distance between the capacitor plates.

公开(公告)号：US08975104B2

公开(公告)日：2015-03-10

申请号：US14185160

申请日：2014-02-20

Applicant: The Royal Institution for the Advancement of Learning/McGill University

Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

IPC: H01L21/00 ,  H01L27/14 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience while also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供了增强的材料性能，增加了环境和化学弹性，同时还允许利用结构层的非导电材料实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

公开(公告)号：US20150024534A1

公开(公告)日：2015-01-22

申请号：US14508715

申请日：2014-10-07

Applicant: Honeywell International Inc.

Inventor： Ryan Supino ,  Eugen Cabuz ,  Burgess R. Johnson ,  Robert D. Horning

IPC: B81C1/00 ,  G01P21/00

CPC classification number: B81C1/00134 ,  B81B2201/03 ,  B81C2203/03 ,  G01D5/34 ,  G01P21/00 ,  Y10T29/49002

Abstract: Systems and methods for two degree of freedom dithering for micro-electromechanical system (MEMS) sensor calibration are provided. In one embodiment, a method for a device comprises forming a MEMS sensor layer, the MEMS sensor layer comprising a MEMS sensor and an in-plane rotator to rotate the MEMS sensor in the plane of the MEMS sensor layer. Further, the method comprises forming a first and second rotor layer and bonding the first rotor layer to a top surface and the second rotor layer to the bottom surface of the MEMS sensor layer, such that a first and second rotor portion of the first and second rotor layers connect to the MEMS sensor. Also, the method comprises separating the first and second rotor portions from the first and second rotor layers, wherein the first and second rotor portions and the MEMS sensor rotate about an in-plane axis of the MEMS sensor layer.

Abstract translation: 提供了用于微机电系统（MEMS）传感器校准的两自由度抖动的系统和方法。 在一个实施例中，用于器件的方法包括形成MEMS传感器层，所述MEMS传感器层包括MEMS传感器和面内旋转器以在MEMS传感器层的平面内旋转MEMS传感器。 此外，该方法包括形成第一转子层和第二转子层，并将第一转子层结合到顶表面，将第二转子层结合到MEMS传感器层的底表面，使得第一和第二转子部分的第一和第二转子部分 转子层连接到MEMS传感器。 此外，该方法包括从第一和第二转子层分离第一和第二转子部分，其中第一和第二转子部分和MEMS传感器围绕MEMS传感器层的面内轴线旋转。