摘要:
A delay value control circuit of a phase difference quantization circuit, wherein the phase difference quantization circuit has first to Nth (N is an integer equal to or greater than 2) delay units with binary weights. The delay value control circuit includes a replica delay unit replicating an Ath (2≦A≦N) delay unit; and a delay control unit configured to compare a phase of a first output signal generated from delaying an input signal with an A−1th delay unit and a phase of a second output signal generated from delaying the input signal with the Ath delay unit and the replica delay unit and configured to control a delay value of the Ath delay unit using a comparison result.
摘要:
A delay stage for a semiconductor device includes at least one delay branch and at least one controllable switching apparatus. The at least one controllable switching apparatus is configured to connect a predefined amount of the at least one delay branch to a supply voltage.
摘要:
A signal delay circuit includes a driving circuit for driving an output signal with a voltage swing voltage between a supply voltage and a ground voltage. The signal delay circuit further includes a varactor load which is coupled to the output signal and has a capacitance which increases according to the supply voltage within a variation range of the supply voltage. The varactor load keeps the delay characteristic of the signal propagation circuit independent of the change of the supply voltage, thereby ensuring high speed operation and improved reliability of the CMOS semiconductor integrated circuit.
摘要:
A controlled transconductance circuit (CTC) is disclosed. The CTC includes (i) a transistor comprising a drain terminal, a gate terminal, and a transistor source terminal, (ii) a biasing circuit element connected between the transistor source terminal and a CTC source terminal, and a variable capacitor connected between the transistor source terminal and a constant voltage terminal where the constant voltage terminal is adapted to receive a constant voltage, and (iii) a CTC control terminal adapted to control a transconductance of the CTC by controlling a capacitance of the variable capacitor.
摘要:
A delay value control circuit of a phase difference quantization circuit, wherein the phase difference quantization circuit has first to Nth (N is an integer equal to or greater than 2) delay units with binary weights. The delay value control circuit includes a replica delay unit replicating an Ath (2≦A≦N) delay unit; and a delay control unit configured to compare a phase of a first output signal generated from delaying an input signal with an A−1th delay unit and a phase of a second output signal generated from delaying the input signal with the Ath delay unit and the replica delay unit and configured to control a delay value of the Ath delay unit using a comparison result.
摘要:
Timing-signal delay equipment which provides an adjustable delay time, equal to a multiple of a predetermined time unit, to an input signal pulse is used as a timing source required in a circuit tester of LSIs (semiconductor large-scale integrated circuits). The timing-signal delay equipment has a plurality of delay elements (D.sub.ij 's) with weighted delay times arranged in a matrix form; a selector (S) coupled with the matrix for selecting one of the delay elements for each column of the matrix, wherein the selected delay elements are connected in series; and an arithmetic control circuit (M) that controls the selectors based on a set-up value of delay time and an error in delay time of each delay equipment. In order to provide a delay time which is equal to a multiple of a predetermined time unit in spite of an error in delay time of each delay element, either a correction matrix is connected in series to the matrix or the weight of each delay element is modified.
摘要:
The disclosure is directed to a simple, inexpensive circuit to extract the complementary metal-oxide-semiconductor (CMOS) threshold voltage (Vt) from an integrated circuit. The threshold voltage may be used elsewhere in the circuit for a variety of purposes. One example use of threshold voltage is to sense the temperature of the circuit. The CMOS Vt extraction circuit of this disclosure includes a current mirror and an arrangement of well-matched transistors and resistors that takes advantage of the square law equation. The structure of the circuit may make it well suited to applications that benefit from low-power radiation hardened circuits.
摘要:
The present invention relates to a delay control circuit and technology in which the amount of delay can be regularly maintained although Process, Voltage, and Temperature (PVT) conditions are changed. The delay control circuit of the present invention includes a ZQ calibration unit configured to generate an impedance code into which a change of PVT conditions has been incorporated, a voltage trimming unit configured to control a level of a trimming voltage at a calibration node, and a delay compensation unit configured to compensate for the amount of delay by controlling an effective capacitance value of a capacitor.
摘要:
A delay circuit is described having a variable capacitor and a triggering circuit. The variable capacitor and the triggering circuit may both comprise transistors. With both the variable capacitor and the triggering circuit dependent on the threshold voltage, the delay circuit may be less sensitive to process variations. The delay circuit may also include a capacitor, a first triggering circuit, a second triggering circuit, and a pull down circuit. The capacitor may discharge at a first rate, triggering the first triggering circuit which, in turn, activates the pull down circuit to pull down the capacitor at a second rate that is faster than the first rate. The second triggering circuit is triggered as the capacitor is pulled down, thereby reducing the effect of input signal noise on the output of the delay circuit. The discharging of the capacitor may be adjusted by a control input thereby making the delay of the delay circuit programmable.
摘要:
A method and apparatus for increasing the delays in transitions at controlled terminals in a non-linear integrated circuit by increasing the effective capacitance at the controlled terminals. This can be accomplished by capacitively cross-coupling at opposing phase controlled terminals. The capacitive crosscoupling is effected by connecting two P/N junction diodes in series with opposite directions of conductivity such that the capacitances across the junctions of the diodes are effectively connected in series.