Abstract:
A method for fabricating transparent substrate vertical cavity surface emitting lasers ("VCSEL"s) using wafer bonding is described. The VCSELs have their active layers located much more closely to a heat sink than is possible in known absorbing substrate VCSELs. The improved heat transport from the active layer to the heat sink permits higher current operation with increased light output as a result of the lower thermal impedance of the system. Alternatively, the same light output can be obtained from the wafer bonded VCSEL at lower drive currents. Additional embodiments use wafer bonding to improve current crowding, current and/or optical confinement in a VCSEL and to integrate additional optoelectronic devices with the VCSEL.
Abstract:
A method for forming an ohmic interface between unipolar (isotype) compound semiconductor wafers without a metallic interlayer and the semiconductor devices formed with these ohmic interfaces are disclosed. The ohmic interface is formed by simultaneously matching the crystallographic orientation of the wafer surfaces and the rotational alignment within the surfaces of the two wafers and then subjecting them to applied uniaxial pressure under high temperatures to form the bonded ohmic interface. Such an ohmic interface is required for the practical implementation of devices wherein electrical current is passed from one bonded wafer to another.
Abstract:
A method for forming an ohmic interface between unipolar (isotype) compound semiconductor wafers without a metallic interlayer and the semiconductor devices formed with these ohmic interfaces are disclosed. The ohmic interface is formed by simultaneously matching the crystallographic orientation of the wafer surfaces and the rotational alignment within the surfaces of the two wafers and then subjecting them to applied uniaxial pressure under high temperatures to form the bonded ohmic interface. Such an ohmic interface is required for the practical implementation of devices wherein electrical current is passed from one bonded wafer to another.
Abstract:
A semiconductor monolithic transmitter photonic integrated circuit (TxPIC) comprises two different situations, either at least one signal channel in the PIC having a modulated source with the channel also extended to include at least one additional element or a plurality of modulated sources comprising N signal channels in the PIC of different transmission wavelengths, where N is equal to or greater than two (2), which may also approximate emission wavelengths along a standardized wavelength grid. In these two different situations, a common active region for such modulated sources and additional channel elements is identified as an extended identical active layer (EIAL), as it extends from a single modulated source to such additional channel elements in the same channel and/or extends to additional modulated sources in separate channels where the number of such channels is N equal to two or greater. The emission wavelength of laser sources in the modulated sources have different positively detuned offsets of the laser emission wavelength relative to the laser active region wavelength, i.e., (λL,i−λPL,L,j>0), and their emission wavelengths form a wavelength grid which may substantially conform to a standardized wavelength grid, such as the ITU grid. These laser sources in the modulated sources with an EIAL are preferentially detuned in the range, for example, of about 20 nm to about 70 nm, preferentially from about 25 nm to about 50 nm, from the active region wavelength of the modulated sources.
Abstract:
An optical device may include a slab, a first waveguide extending from a first portion of the slab to supply multiple first optical signals to the first portion of the slab, multiple second waveguides coupled to a second portion and to a third portion of the slab. The optical device may include multiple third waveguides provided extending from a fourth portion of the slab to direct a corresponding one of the multiple first optical signals away from the slab, a fourth waveguide extending from the fourth portion of the slab to supply multiple second optical signals to the fourth portion of the slab, and multiple fifth waveguides extending from the first portion of the slab to direct a corresponding one of the multiple second optical signals away from the slab. The optical device may include circuits to receive the first optical signals, the second optical signals, and local oscillator signals.
Abstract:
A Raman pump may include a dual output laser configured to output two optical signals; a delay interferometer configured to delay a first of the two optical signals to decorrelate the two optical signals from each other; and a combiner configured to combine the delayed first of the two optical signals and a second of the two optical signals to provide a Raman amplification signal.
Abstract:
The present invention provides for a transceiver comprising a transmitter portion and a receiver portion. The transmitter portion includes a laser, the laser providing an optical signal having one of a plurality of wavelengths. The optical signal from the laser is modulated to create a first wavelength-division multiplexed signal at an output of the transceiver. The optical signal from the laser is also used by a demultiplexer to demultiplexer a second wavelength-division multiplexed signal at an input of the transceiver. The use of the optical signal from the laser in both modulation and demodulation of wavelength-division multiplexed signals results in a transceiver having fewer discrete components resulting in a compact design and reduced costs.
Abstract:
A forward error correction (FEC) communication device that includes a transmitter photonic integrated circuit (TxPIC) or a receiver photonic integrated circuit (RxPIC) and a FEC device for FEC coding at least one channel with a first error rate and at least one additional channel with a second error rate, wherein the first error rate is greater than the second error rate. The TxPIC chip is a monolithic multi-channel chip having an array of modulated sources integrated on the chip, each operating at a different wavelength, wherein at least one of the modulated sources is modulated with a respective FEC encoded signal. The TxPIC also includes an integrated wavelength selective combiner for combining the channels for transport over an optical link.
Abstract:
An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.
Abstract:
A forward error correction (FEC) communication device that includes a transmitter photonic integrated circuit (TxPIC) or a receiver photonic integrated circuit (RxPIC) and a FEC device for FEC coding at least one channel with a first error rate and at least one additional channel with a second error rate, wherein the first error rate is greater than the second error rate. The TxPIC chip is a monolithic multi-channel chip having an array of modulated sources integrated on the chip, each operating at a different wavelength, wherein at least one of the modulated sources is modulated with a respective FEC encoded signal. The TxPIC also includes an integrated wavelength selective combiner for combining the channels for transport over an optical link.