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19 条记录 (耗时 0.016 秒)

    Demultiplexing photodetector
    2.
    发明授权
    Demultiplexing photodetector 失效
    解复用光电探测器

    公开(公告)号：US4301463A

    公开(公告)日：1981-11-17

    申请号：US128305

    申请日：1980-03-07

    申请人： Charles A. Burrus, Jr. ,  Joe C. Campbell ,  Andrew G. Dentai ,  Tien P. Lee

    发明人： Charles A. Burrus, Jr. ,  Joe C. Campbell ,  Andrew G. Dentai ,  Tien P. Lee

    IPC分类号： H01L31/11 ,  H04B10/158 ,  H01L27/14

    CPC分类号： H01L31/11

    摘要： A three terminal, totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary layers (203 and 205) of indium, gallium, arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a buffer layer (204) of n type indium phosphide. Operation at longer wavelengths is achieved by causing the bottom quaternary layer to have the higher bandgap energy thereby permitting it to detect the shorter wavelengths in the radiation and causing the topmost quaternary layer (205) to have the lower bandgap energy thereby permitting it to detect the longer wavelengths. The bottom contact (213) on the substrate has an opening thereby providing a window (230) through which incoming radiation (250) can be coupled through the substrate to the two quaternary layers.

    摘要翻译： 公开了三端，全集成解复用光电二极管，其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。 通过n型磷化铟的缓冲层（204）分离具有不等带隙并且各具有pn结的铟，镓，砷化磷的两个四元层（203和205）。 通过使底部四周层具有较高的带隙能量从而允许其检测到辐射中的较短波长并且使最顶层的四分层（205）具有较低的带隙能量从而允许其检测到 波长较长。 衬底上的底部触点（213）具有开口，从而提供窗口（230），入射辐射（250）可以通过该窗口通过衬底耦合到两个四层。

    Semiconductor heterointerface optical waveguide
    3.
    发明授权
    Semiconductor heterointerface optical waveguide 失效
    半导体异质界面光波导

    公开(公告)号：US4751555A

    公开(公告)日：1988-06-14

    申请号：US48286

    申请日：1987-05-11

    申请人： Rodney C. Alferness ,  Andrew G. Dentai ,  Charles H. Joyner, Jr.

    发明人： Rodney C. Alferness ,  Andrew G. Dentai ,  Charles H. Joyner, Jr.

    IPC分类号： G02B6/12 ,  C30B25/02 ,  C30B29/40 ,  G02B6/122 ,  G02F1/025 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323 ,  H01L29/161

    CPC分类号： H01S5/0422 ,  G02F1/025 ,  H01S5/32325 ,  G02F2202/102 ,  H01S5/3201

    摘要： Low loss semiconductor waveguides for supporting propagation of optical signals over a wide range of wavelengths are achieved by growing at least two epitaxial layers of dopant material contiguous along a major surface of each layer to form a heterointerface therebetween. At least one of the epitaxial layers includes a sufficient concentration of semiconductor material to cause strain via lattice mismatch substantially at and near the heterointerface. The strain induces a change in refractive index such that the heterointerface exhibits a substantially higher refractive index than a portion of each epitaxial layer proximate to the heterointerface. The resulting waveguide is capable of supporting propagation of optical signals substantially along the heterointerface. In one example, contiguous epitaxial layers of InP and InGaP form a waveguide for optical signals at wavelengths greater than 0.93 .mu.m. The concentration of Ga in the InGaP epitaxial layer is varied from 10.sup.18 to 10.sup.20 cm.sup.-3 to increase the refractive index difference between the heterointerface and the immediate surrounding layers.

    High-speed double-heterostructure bipolar transistor devices
    4.
    发明授权
    High-speed double-heterostructure bipolar transistor devices 失效
    高速双异质结双极晶体管器件

    公开(公告)号：US5625206A

    公开(公告)日：1997-04-29

    申请号：US657255

    申请日：1996-06-03

    申请人： S. Chandrasekhar ,  Andrew G. Dentai ,  Yasuyuki Miyamoto

    发明人： S. Chandrasekhar ,  Andrew G. Dentai ,  Yasuyuki Miyamoto

    IPC分类号： H01L29/737 ,  H01L29/201

    CPC分类号： H01L29/7371

    摘要： The total base-collector capacitance of a double-heterostructure bipolar transistor device is reduced by removing semiconductor material from the extrinsic regions and replacing the removed material with a relatively-low-dielectric-constant material, The base-collector capacitance is further reduced by using a composite subcollector structure that permits the extrinsic regions to be made thicker than the intrinsic region of the device.

    摘要翻译： 通过从外部区域去除半导体材料并用相对低介电常数的材料代替去除的材料，可以减少双异质结双极晶体管器件的总基极 - 集电极电容。基极 - 集电极电容通过使用 复合子集电极结构，其允许外部区域被制成比该器件的本征区域更厚。

    Integrated-circuit optical network unit
    5.
    发明授权
    Integrated-circuit optical network unit 失效
    集成电路光网络单元

    公开(公告)号：US5577138A

    公开(公告)日：1996-11-19

    申请号：US516472

    申请日：1995-08-17

    申请人： S. Chandrasekhar ,  Andrew G. Dentai

    发明人： S. Chandrasekhar ,  Andrew G. Dentai

    IPC分类号： H01L27/15 ,  G02B6/12 ,  G02B6/42 ,  H04B10/02 ,  H04B10/28 ,  H04B10/00

    CPC分类号： G02B6/4246 ,  G02B6/12004

    摘要： An optical network unit designed to be connected to incoming and outgoing fibers at a customer location is made in integrated-circuit form. One portion of the integrated circuit includes a thin-film waveguiding layer and functions as an optical splitter, a photodetector and a modulator. Another portion of the circuit serves as an amplifier..

    摘要翻译： 设计为在客户位置连接到输入和输出光纤的光网络单元以集成电路形式。 集成电路的一部分包括薄膜波导层，并且用作光分路器，光电检测器和调制器。 电路的另一部分用作放大器。