公开(公告)号：US20120063209A1

公开(公告)日：2012-03-15

申请号：US13231155

申请日：2011-09-13

申请人： Jun Koyama ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Shunpei Yamazaki

IPC分类号： G11C11/24 ,  G11C8/08

CPC分类号： G11C5/10 ,  G11C7/12 ,  G11C7/18 ,  G11C11/4085 ,  G11C11/4094 ,  G11C11/4097 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/10885 ,  H01L27/10897 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/7869

摘要： An object of one embodiment of the present invention is to propose a memory device in which a period in which data is held is ensured and memory capacity per unit area can be increased. In the memory device of one embodiment of the present invention, bit lines are divided into groups, and word lines are also divided into groups. The word lines assigned to one group are connected to the memory cell connected to the bit lines assigned to the one group. Further, the driving of each group of bit lines is controlled by a dedicated bit line driver circuit of a plurality of bit line driver circuits. In addition, cell arrays are formed on a driver circuit including the above plurality of bit line driver circuits and a word line driver circuit. The driver circuit and the cell arrays overlap each other.

摘要翻译： 本发明的一个实施例的目的是提出一种存储器件，其中确保了保持数据的周期并且可以增加每单位面积的存储器容量。 在本发明的一个实施例的存储器件中，位线被分成组，字线也被分成组。 分配给一个组的字线连接到连接到分配给该组的位线的存储单元。 此外，每组位线的驱动由多位位线驱动电路的专用位线驱动电路控制。 此外，在包括上述多个位线驱动电路的驱动电路和字线驱动电路上形成单元阵列。 驱动器电路和单元阵列彼此重叠。

公开(公告)号：US20120062561A1

公开(公告)日：2012-03-15

申请号：US13229934

申请日：2011-09-12

申请人： Jun KOYAMA

发明人： Jun KOYAMA

IPC分类号： G06T15/00

CPC分类号： H04N13/341 ,  H04N13/398

摘要： An object is to provide a three-dimensional display device capable of displaying bright images with low power consumption. The display device includes: an image display portion including a pixel portion provided with a plurality of pixels; a light-blocking portion including a first shutter and a second shutter; a signal source outputting the common potential; and a controller controlling transmittances of the first shutter and the second shutter and level of the common potential output from the signal source to bring the transmittances and the level into synchronism with supply of an image signal, display of a right-eye image, or display of a left-eye image performed in the pixel portion.

摘要翻译： 目的在于提供能够以低功耗显示亮图像的三维显示装置。 显示装置包括：图像显示部分，包括设置有多个像素的像素部分; 遮光部分，包括第一遮板和第二遮板; 输出公共电位的信号源; 以及控制器，其控制第一快门和第二快门的透射率以及从信号源输出的公共电位的电平，以使透射率和电平与图像信号的提供，右眼图像或显示器的显示同步 在像素部分中执行的左眼图像。

公开(公告)号：US20120061673A1

公开(公告)日：2012-03-15

申请号：US13226845

申请日：2011-09-07

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kaoru Hatano

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kaoru Hatano

IPC分类号： H01L33/08 ,  H01L21/336 ,  H01L33/16

CPC分类号： H01L27/127 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/41733

摘要： It is an object of one embodiment of the present invention to manufacture a light-emitting display device by simplifying a manufacturing process of a transistor, without an increase in the number of steps as well as the number of photomasks as compared to those in the conventional case. A step for processing a semiconductor layer into an island shape is omitted by using a high-resistance oxide semiconductor which is intrinsic or substantially intrinsic for the semiconductor layer, used to form transistors. Formation of an opening in the semiconductor layer or an insulating layer formed over the semiconductor layer and etching of an unnecessary portion of the semiconductor layer are performed at the same time; thus, the number of photolithography steps is reduced.

摘要翻译： 本发明的一个实施方案的目的是通过简化晶体管的制造工艺来制造发光显示装置，而不增加步骤数量以及光掩模的数量，与常规的相比 案件。 通过使用用于形成晶体管的半导体层的固有或本质上的高电阻氧化物半导体来省略将半导体层加工成岛状的步骤。 在半导体层上形成开口或在半导体层上形成的绝缘层和对半导体层的不需要部分进行蚀刻的同时进行; 因此，光刻步骤的数量减少。

公开(公告)号：US20120057396A1

公开(公告)日：2012-03-08

申请号：US13223490

申请日：2011-09-01

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC分类号： G11C11/24

CPC分类号： G11C5/025

摘要： An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is provided with both a memory circuit including a transistor including an oxide semiconductor (in a broader sense, a transistor whose off-state current is sufficiently small) and a peripheral circuit such as a driver circuit including a transistor including a material other than an oxide semiconductor (in other words, a transistor capable of operating at sufficiently high speed). The peripheral circuit is provided in a lower portion and the memory circuit is provided in an upper portion; thus, the area and size of the semiconductor device can be decreased.

摘要翻译： 目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也能够保存存储的数据。 一种半导体器件具有包括包括氧化物半导体（在更广泛的意义上为截止电流足够小的晶体管）的晶体管的存储器电路以及诸如包括晶体管的驱动电路的外围电路，该晶体管包括其他材料 比氧化物半导体（换句话说，能够以足够高的速度运行的晶体管）。 外围电路设置在下部，存储电路设置在上部; 因此，可以减小半导体器件的面积和尺寸。

公开(公告)号：US20120051119A1

公开(公告)日：2012-03-01

申请号：US13216562

申请日：2011-08-24

申请人： Shunpei Yamazaki ,  Jun Koyama

发明人： Shunpei Yamazaki ,  Jun Koyama

IPC分类号： G11C11/24 ,  G11C8/10 ,  H01L27/07

CPC分类号： H01L27/11517 ,  G11C11/403 ,  G11C11/565 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/003 ,  G11C16/0433 ,  G11C16/08 ,  H01L27/1225

摘要： An object is to provide a semiconductor device which includes a memory cell capable of holding accurate data even when the data is multilevel data. The semiconductor device includes a memory cell holding data in a node to which one of a source and a drain of a transistor whose channel region is formed from an oxide semiconductor. Note that the value of off-state current (leakage current) of the transistor is extremely small. Thus, after being set to have a predetermined value, the potential of the node can be kept constant or substantially constant by turning the transistor off. In this manner, accurate data can be stored in the memory cell.

摘要翻译： 目的是提供一种半导体器件，其包括即使当数据是多电平数据时也能够保持精确数据的存储单元。 半导体器件包括存储单元，其保持在沟道区域由氧化物半导体形成的晶体管的源极和漏极之一的节点中的数据。 注意，晶体管的截止电流（漏电流）的值非常小。 因此，在被设置为具有预定值之后，通过关闭晶体管可以使节点的电位保持恒定或基本恒定。 以这种方式，可以将精确的数据存储在存储单元中。

公开(公告)号：US20120051118A1

公开(公告)日：2012-03-01

申请号：US13215489

申请日：2011-08-23

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC分类号： G11C11/24 ,  H01L29/12

CPC分类号： G11C14/0018 ,  G11C8/08 ,  G11C11/401 ,  G11C11/403 ,  G11C16/02 ,  G11C16/0408 ,  G11C16/0433 ,  G11C16/34 ,  H01L27/1156 ,  H01L27/1225

摘要： A memory device in which data can be retained for a long time is provided. The memory device includes a memory element and a transistor which functions as a switching element for controlling supply, storage, and release of electrical charge in the memory element. The transistor includes a second gate electrode for controlling the threshold voltage in addition to a normal gate electrode. Further, the off-state current of the transistor is extremely low because an active layer thereof includes an oxide semiconductor. In the memory device, data is stored not by injection of electrical charge to a floating gate surrounded by an insulating film at high voltage but by control of the amount of electrical charge of the memory element through the transistor whose off-state current is extremely low.

摘要翻译： 提供了能够长时间保持数据的存储装置。 存储器件包括存储元件和用作控制存储元件中电荷的供应，存储和释放的开关元件的晶体管。 晶体管包括用于除正常栅电极之外控制阈值电压的第二栅电极。 此外，晶体管的截止电流极低，因为其有源层包括氧化物半导体。 在存储装置中，数据不是通过将电荷注入到由绝缘膜高压包围的浮动栅极而是通过截止状态电流非常低的晶体管控制存储元件的电荷量来存储的 。

公开(公告)号：US08124922B2

公开(公告)日：2012-02-28

申请号：US12467001

申请日：2009-05-15

申请人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido ,  Seiko Amano ,  Makoto Yanagisawa

发明人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido ,  Seiko Amano ,  Makoto Yanagisawa

IPC分类号： H01J40/14

CPC分类号： H04N5/37455 ,  G01J1/4204 ,  G01J1/46

摘要： Objects are to accumulate electric charge in a capacitor so that light intensity can be detected even when the amount of incident light is small, and to operate a photoelectric conversion device without increasing the number of elements such as a constant current source or a switch. The photoelectric conversion device includes a photoelectric conversion circuit, a capacitor, and a comparator for comparing a potential of one electrode of the capacitor with a second potential. The photoelectric conversion circuit includes a photoelectric conversion element and an amplifier circuit for amplifying an output current from the photoelectric conversion element In the capacitor, a first potential is supplied through a first switch, and charging or discharging is performed through a second switch in accordance with the current amplified by the amplifier circuit.

摘要翻译： 目的是在电容器中蓄积电荷，使得即使入射光量较小也能够检测光强度，并且在不增加诸如恒流源或开关的元件数量的情况下操作光电转换装置。 光电转换装置包括光电转换电路，电容器和用于将电容器的一个电极的电位与第二电位进行比较的比较器。 光电转换电路包括光电转换元件和用于放大来自电容器中的光电转换元件的输出电流的放大电路，通过第一开关提供第一电位，并且通过第二开关执行充电或放电 电流由放大电路放大。

公开(公告)号：US20120044763A1

公开(公告)日：2012-02-23

申请号：US13288383

申请日：2011-11-03

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC分类号： G11C16/04

CPC分类号： G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/0433 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/32

摘要： There is provided a non-volatile memory which enables high accuracy threshold control in a writing operation. In the present invention, a drain voltage and a drain current of a memory transistor are controlled to carry out a writing operation of a hot electron injection system, which is wherein a charge injection speed does not depend on a threshold voltage. FIGS. 1A and 1B are views of a circuit structure for controlling the writing. In FIGS. 1A and 1B, an output of an operational amplifier 103 is connected to a control gate of a memory transistor 101, a constant current source 102 is connected to a drain electrode, and a source electrode is grounded. The constant current source 102 and a voltage Vpgm are respectively connected to two input terminals of the operational amplifier 103.

摘要翻译： 提供了一种在写入操作中实现高精度阈值控制的非易失性存储器。 在本发明中，控制存储晶体管的漏极电压和漏极电流，进行热电子注入系统的写入动作，其中电荷注入速度不依赖于阈值电压。 图 图1A和1B是用于控制写入的电路结构的视图。 在图 如图1A和1B所示，运算放大器103的输出连接到存储晶体管101的控制栅极，恒流源102连接到漏电极，源电极接地。 恒流源102和电压Vpgm分别连接到运算放大器103的两个输入端。

公开(公告)号：US08120557B2

公开(公告)日：2012-02-21

申请号：US12760598

申请日：2010-04-15

申请人： Jun Koyama

发明人： Jun Koyama

IPC分类号： G09G3/32

CPC分类号： G09G3/3208 ,  C09K11/06 ,  C09K2211/1088 ,  C09K2211/185 ,  G09G3/2022 ,  G09G3/3241 ,  G09G3/3266 ,  G09G3/3283 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/027 ,  G09G2320/0247 ,  G09G2320/0266 ,  G09G2320/041 ,  H01L27/1222 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3279 ,  H01L51/0096 ,  H01L51/5259 ,  H01L2251/301 ,  H05B33/14

摘要： The present invention is to provide a light emitting device capable of obtaining a certain luminance without influence by the temperature change, and a driving method thereof. A current mirror circuit formed by using a transistor is provided for each pixel. The first transistor and the second transistor of the current mirror circuit are connected such that the drain currents thereof are maintained at proportional values regardless of the load resistance value. Thereby, a light emitting device capable of controlling the OLED driving current and the luminance of the OLED by controlling the drain current of the first transistor at a value corresponding to a video signal in a driving circuit, and supplying the drain current of the second transistor to the OLED, is provided.

摘要翻译： 本发明是提供一种不受温度变化影响而获得一定亮度的发光装置及其驱动方法。 为每个像素提供使用晶体管形成的电流镜电路。 连接电流镜电路的第一晶体管和第二晶体管，使得其漏极电流保持在比例值，而不管负载电阻值如何。 由此，能够通过将第一晶体管的漏极电流控制在对应于驱动电路中的视频信号的值，并且提供第二晶体管的漏极电流的能够控制OLED的OLED驱动电流和OLED的亮度的发光器件 提供给OLED。

公开(公告)号：US20120032730A1

公开(公告)日：2012-02-09

申请号：US13196250

申请日：2011-08-02

申请人： Jun Koyama

发明人： Jun Koyama

IPC分类号： G11C5/14

CPC分类号： H03K3/012 ,  G11C5/147 ,  G11C8/04 ,  H01L21/823412 ,  H01L21/8258 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78693 ,  H03K3/0372 ,  H03K3/0375 ,  H03K19/0008

摘要： To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved.

摘要翻译： 为了降低半导体集成电路的功耗并减少半导体集成电路中的工作延迟，包括在存储电路中的多个时序电路各自包括其沟道形成区域形成有氧化物半导体的晶体管，以及电容器 其一个电极电连接到当晶体管截止时处于浮置状态的节点。 通过使用氧化物半导体用于晶体管的沟道形成区域，可以实现具有极低截止电流（漏电流）的晶体管。 因此，通过在不向存储电路供给电源电压的期间内关断晶体管，电容器的一个电极所连接的节点的期间的电位可以保持恒定或几乎恒定。 因此，可以实现上述目的。