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91.发明授权
公开(公告)号：US5504526A
公开(公告)日：1996-04-02
申请号：US155833
申请日：1993-11-23
IPC分类号： H01L27/148 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/369 , H04N5/3728 , H04N5/376
CPC分类号： H04N5/3728 , H01L27/14831 , H04N5/3597
摘要： A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode. A potential controller is provided which forces, when a signal charge packet is read out of the storage diode toward the CCD register layer, the storage diode to decrease in potential so that the storage diode becomes potentially less than its potential as set during the reset operation, while causing the channel region to be fixed at almost the same potential during the read operation and the reset operation.
摘要翻译： 固态成像装置包括基板和布置在基板上的电荷分组存储单元或像素（或“像素”）的阵列，每个包括存储二极管，其中存储指示入射光的信号电荷分组 。 电荷转移部分与图像元素阵列耦合。 转印部分包括与存储二极管间隔开以限定它们之间的沟道区域的电荷耦合器件（CCD）寄存器层，以及覆盖寄存器层和沟道区域的第一绝缘电极。 复位部分耦合到存储二极管，用于通过额外地将额外的电荷分组注入到存储二极管中并通过使电荷从存储二极管排出来潜在地复位存储二极管。 提供了一种电位控制器，当将信号电荷分组从存储二极管朝向CCD寄存器层读出时，存储二极管降低电位，使得存储二极管潜在地小于其在复位操作期间设置的电位 同时在读取操作和复位操作期间使通道区域固定在几乎相同的电位。
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公开(公告)号：US5437921A
公开(公告)日：1995-08-01
申请号：US773818
申请日：1991-10-09
申请人： Yasuo Kogo , Takefumi Ito , Mitsuhiro Okumura , Kiyoshi Yoshizaki , Takeji Fujihara , Hirofumi Yamashita
发明人： Yasuo Kogo , Takefumi Ito , Mitsuhiro Okumura , Kiyoshi Yoshizaki , Takeji Fujihara , Hirofumi Yamashita
IPC分类号： C22C49/00 , C22C47/00 , C22C49/06 , C22C49/14 , H01L23/14 , H01L23/373 , H01L23/492 , H05K1/05 , B32B5/06
CPC分类号： H01L24/29 , C22C49/14 , H01L23/3733 , H01L23/4922 , H01L2224/29298 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01058 , H01L2924/01061 , H01L2924/01079 , H01L2924/01082 , H01L2924/01094 , H01L2924/0132 , H01L2924/0133 , H01L2924/10253 , H01L2924/351 , H05K1/05 , Y10T442/624 , Y10T442/654
摘要： A base material for mounting electronic components is provided which has a low density and a coefficient of thermal expansion close to that of aluminum and can be processed with ease. The base material essentially consists of aluminum or an aluminum alloy reinforced with carbon fibers with a volume fraction ranging from 0.15 to 0.55, the carbon fibers in the base material being arranged at random on a surface for mounting an electronic component and being arranged in layer in a direction vertical to the above-described surface.
摘要翻译： 提供了一种用于安装电子部件的基材，其具有接近于铝的低密度和热膨胀系数，并且可以容易地加工。 基体材料基本上由铝或铝合金组成，其体积分数为0.15-0.55的碳纤维增强，基材中的碳纤维被随机地布置在用于安装电子部件的表面上并且被布置在 垂直于上述表面的方向。
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公开(公告)号：US5343061A
公开(公告)日：1994-08-30
申请号：US67966
申请日：1993-05-27
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/361 , H04N5/369 , H04N5/3722 , H04N5/3728 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14893
摘要： An FIT or IT solid-state imaging device comprising a p-type Si substrate in which n-type regions forming storage diode portions, signal read-out portions, n-type CCD channels, and p.sup.+ -type element isolating regions are formed, a solid-state imaging element chip on the top of the substrate in which pixel electrodes are formed, a photo-conductive film stacked above the solid-state imaging element chip, and a transparent electrode formed above the photo-conductive film, wherein a drain for charge injection is further provided in or at one end of the pixel region of the substrate, the potential of the storage diode portion is set to a value almost equal to the potential of the element isolating region immediately before the accumulation of the signal charge, by injecting a specified amount of charge from the drain into the storage diode portion, and during the accumulation of the signal charge, the potential applied to the transparent electrode is set to a value higher than the potential of the storage diode portion set immediately before the accumulation of the signal charge, and the potential of the storage diode portion is made close to the potential of the element isolating layer and the substrate in the vicinity particularly in a case where the amount of incident light is small so that variations in dark current are conspicuous, by injecting holes of the carriers generated by the incident light in the photo-conductive film into the storage diode portion.
摘要翻译： 一种FIT或IT固态成像装置，包括形成存储二极管部分，信号读出部分，n型CCD通道和p +型元件隔离区域的n型区域的p型Si衬底， 在其上形成有像素电极的基板的顶部上的固态成像元件芯片，在固体摄像元件芯片上方堆叠的导电膜，以及形成在导电膜上方的透明电极，其中， 电荷注入还设置在衬底的像素区域的一端或其一端，存储二极管部分的电位被设置为几乎等于信号电荷积累之前的元件隔离区的电位的值， 将指定量的电荷从漏极注入存储二极管部分，并且在积累信号电荷期间，施加到透明电极的电位被设置为高于电位 存储二极管部分在紧靠信号电荷的累积之前设置，并且使存储二极管部分的电位接近元件隔离层和基板附近的电位，特别是在入射光量为 通过将由光入射光产生的载流子的空穴注入到存储二极管部分中，使得暗电流的变化明显。
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公开(公告)号：US08390707B2
公开(公告)日：2013-03-05
申请号：US12869799
申请日：2010-08-27
申请人： Hirofumi Yamashita
发明人： Hirofumi Yamashita
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L27/14687 , H01L31/18
摘要： According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.
摘要翻译： 根据一个实施例，固态成像装置包括被配置为使得光电转换单元和信号扫描电路单元包括在半导体衬底中并且设置单位像素的矩阵的像素区域，以及驱动电路 区域，其被配置为使得用于驱动信号扫描电路单元的器件驱动电路设置在半导体衬底上，其中光电转换单元设置在半导体衬底的与前表面相对的背面侧上 半导体衬底，其中形成信号扫描电路单元，并且单位像素包括绝缘膜，该绝缘膜以与邻近的单位像素围绕边界部分并且限定器件隔离区域的方式设置。
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公开(公告)号：US08319873B2
公开(公告)日：2012-11-27
申请号：US12504136
申请日：2009-07-16
申请人： Hirofumi Yamashita , Junji Naruse
发明人： Hirofumi Yamashita , Junji Naruse
IPC分类号： H04N5/335
CPC分类号： H04N5/37457 , H04N5/3741
摘要： A solid-state imaging device includes a photodiode array having a plurality of photodiodes, read transistors each having one terminal and the other terminal of a current path, one terminal of the current path being connected to one of four photodiodes corresponding to two photodiodes adjacent in a row direction and two photodiodes adjacent in a column direction, the other terminal of the current path being connected in common to a first node, the first node provided as a set of four photodiodes being in a floating-state, read control lines to connect the gate of the read transistor corresponding to each set of the read transistors in common, and independently supplied with a read signal, and vertical signal lines supplied with a signal converted by two photodiodes adjacent in a row direction of the photodiodes for an independent period within one horizontal blanking period of image scanning.
摘要翻译： 固体摄像器件包括具有多个光电二极管的光电二极管阵列，每个具有一个端子的读取晶体管和电流路径的另一个端子，电流路径的一个端子连接到与两个相邻的两个光电二极管相对应的四个光电二极管中的一个 行方向和在列方向上相邻的两个光电二极管，电流路径的另一端共同连接到第一节点，第一节点被设置为一组四个光电二极管，处于浮置状态，读取控制线连接 读取晶体管的栅极对应于读取晶体管的每一组，并且独立地提供读取信号，以及垂直信号线，被提供有由在光电二极管的行方向上相邻的两个光电二极管转换的信号在独立时段内 图像扫描的一个水平消隐期。
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96.发明申请METHOD OF FORMING THROTTLE PASSAGE, EXPANSION VALVE WITH THROTTLE PASSAGE, AND PIPE WITH THROTTLE PASSAGE 有权形成通路的方法，具有通路的膨胀阀和带有通路的管道公开(公告)号：US20110259968A1
公开(公告)日：2011-10-27
申请号：US13088522
申请日：2011-04-18
CPC分类号： F25B41/062 , B23P11/005 , F25B2341/063 , Y10T29/49908
摘要： A throttle passage is formed by providing a step portion by expanding an open end side of a refrigerant passage of the refrigeration cycle, placing a throttle passage member on the step portion, and squashing the throttle passage member using a columnar squashing jig to widen a rim of the outer periphery, thereby causing the throttle passage member to be fixedly engaged to an inner wall of the refrigerant passage. The throttle passage member has a simple shape formed only by machining a circular plate having a hole formed in a center thereof into a truncated conical shape, and therefore can be made at low cost. Throttle passage member is only squashed to be fixedly engaged in the refrigerant passage, and therefore can be easily formed.
摘要翻译： 通过使制冷循环的制冷剂通路的开口端侧膨胀，在台阶部分上设置节流通道构件，并且使用柱状挤压夹具来挤压节流通道构件来形成节流通道，以加宽边缘 从而使节流通道部件与制冷剂通道的内壁固定接合。 节流通道构件具有仅通过将具有形成在其中心的孔的圆形板加工成截头圆锥形状而形成的简单形状，因此可以以低成本制造。 节气门通道构件仅被压扁以固定地接合在制冷剂通道中，因此可以容易地形成。
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公开(公告)号：US07700676B2
公开(公告)日：2010-04-20
申请号：US12158199
申请日：2006-12-19
CPC分类号： C09D5/02 , C08L33/08 , C08L51/06 , C08L75/04 , C09D133/02 , C09D175/04 , C08L2666/02
摘要： It is an object of the present invention to provide a water-based one-pack-type coating composition which can form a coating film having a satisfactory feel of achieving a soft feel and coating film performance simultaneously and further maintains common performance of paint such as excellent design (a matt appearance, etc.), an adhesion property, coating film strength, abrasion resistance, water resistance, oil and grease-contamination resistance. A water-based one-pack-type coating composition of the present invention comprises: an ionomer resin emulsion (A), a polyolefin resin emulsion (B), resin particles (C), and a urethane dispersion (D), wherein a solid content mass ratio (mass ratio as converted into a solid content) of (C)/{(A)+(B)+(D)} is 40/100 to 100/100, a solid content mass ratio of (A)/(B) is 1/3 to 3/1, and a solid content mass ratio of {(A)+(B)}/(D) is 40/60 to 70/30.
摘要翻译： 本发明的目的是提供一种水性单组分型涂料组合物，其可以形成具有令人满意的达到柔软手感和涂膜性能的手感的涂膜，并进一步保持涂料的共同性能，例如 优异的设计（无光泽外观等），粘合性，涂膜强度，耐磨性，耐水性，油和油脂污染性。 本发明的水性单组分涂料组合物包括：离聚物树脂乳液（A），聚烯烃树脂乳液（B），树脂颗粒（C）和氨基甲酸酯分散体（D），其中固体 （C）/ {（A）+（B）+（D）}的含量质量比（转化为固体成分的质量比）为40/100〜100/100，固体成分质量比（A）/ （B）为1/3〜3/1，{（A）+（B）} /（D）的固体成分质量比为40/60〜70/30。
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公开(公告)号：US07554141B2
公开(公告)日：2009-06-30
申请号：US11392616
申请日：2006-03-30
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
IPC分类号： H01L31/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.
摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。
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公开(公告)号：US07553442B2
公开(公告)日：2009-06-30
申请号：US11727438
申请日：2007-03-27
IPC分类号： B28B3/20
CPC分类号： B01D53/944 , B01D39/2075 , B01J35/10 , C04B38/0006 , C04B2111/00793 , C04B2111/0081 , F01N3/0222 , F01N3/035 , F01N3/2828 , Y10T29/49345 , C04B35/195 , C04B38/0054 , C04B38/0074 , C04B38/068 , C04B35/565 , C04B38/064 , C04B35/447 , C04B38/02
摘要： An exhaust gas purifying filter is made of a ceramic material in a honeycomb structure having introduction passages for introducing exhaust gas that includes particulate matter emitted from an internal combustion engine, porous walls that collect the particulate matter and exhaust passages for exhausting the exhaust gas after the particulate matter has been removed therefrom, with the porous walls supporting a catalyst for oxidizing and removing the particulate matter. The porosity of the porous wall is in a range from 55 to 80%, the mean pore size is in-a range from 30 to 50 μm, and the total volume X of the pores included in the exhaust gas purifying filter and the volume Y of the pores that are not smaller than 100 μm satisfy the relation of inequality Y/X≦0.05.
摘要翻译： 废气净化过滤器由陶瓷材料制成，蜂窝结构体具有用于引入废气的引入通道，所述引入通道包括从内燃机排出的颗粒物质，收集颗粒物质的多孔壁和排出废气的废气通道 已经从其中除去颗粒物质，多孔壁支撑用于氧化和除去颗粒物质的催化剂。 多孔壁的孔隙率在55〜80％的范围内，平均孔径在30〜50μm的范围内，排气净化过滤器中所含的孔的体积X和体积Y 的不小于100μm的孔满足不等式Y / X <= 0.05的关系。
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公开(公告)号：US07369169B2
公开(公告)日：2008-05-06
申请号：US10916409
申请日：2004-08-12
IPC分类号： H04N5/335
CPC分类号： H04N5/3658 , H01L27/14609 , H01L27/14643 , H04N5/3575 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要翻译： MOS型固态成像装置包括：通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域，沿着成像区域的行方向布置的多个垂直地址线，以选择行 要被寻址的单位单元，沿着成像区域的列方向布置的多条垂直信号线，以从每列中的单位单元读出信号;多个负载晶体管，每个连接到每个垂直信号的一端 线，以及多个水平选择晶体管，每个连接到每个垂直信号线的另一端。 在该装置中，每个单位单元包括用作光电转换部分的光电二极管，具有栅极的放大晶体管，来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器，以及与地址电容器并联连接的复位晶体管。
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