摘要:
There is provided a wireless measuring apparatus that efficiently measures the frequency characteristics of a sensor unit mounted on an object to be measured. The wireless measuring apparatus is a wireless measuring apparatus that measures the frequency characteristics of a sensor unit (10) mounted on an object (40) to be measured, including the sensor unit (10) having a piezo-resonator (11), an antenna (20) that forms a circuitry with the sensor unit (10), and a measuring element (30) that supplies high frequency electricity changed in different frequency to the circuitry and measures the frequency characteristics of the reflected electricity strength received from the circuitry.
摘要:
A bonding method of bonding two base members together through a bonding film is provided. The bonding method is a method for forming a bonded body in which a first base member and a second base member are bonded together through the bonding film. The bonding method includes: applying a liquid material containing a silicone material composed of silicone compounds onto a surface of at least one of the first and second base members to form a liquid coating on the surface; drying the liquid coating so that it is transformed into the bonding film on the surface of the at least one of the first and second base members; and applying energy to the bonding film so that a bonding property is developed in the vicinity of a surface thereof, to thereby bond the first and second base members together through the bonding film.
摘要:
A semiconductor memory device according to an embodiment includes: first lines provided on a substrate; second lines provided between the first lines and the substrate so as to intersect the first lines; and a first memory cell array including first memory cells, each of the first memory cells being provided at respective intersections of the first lines and the second lines and including a current rectifying element and a variable resistor connected in series. The variable resistor of the first memory cell includes a first recording layer and a second recording layer, the first recording layer being made of an oxide of a first metal material, the second recording layer being made of the first metal material and being formed so as to contact with the first recording layer. The second recording layer is closer to the first line than the first recording layer is.
摘要:
A separating method of a bonded body, the bonded body including two base members and a bonding film through which the base members are boded together, enabling to easily and efficiently separating the bonded body into the two original base members is provided. Further, the bonding film contains a silicone material composed of silicone compounds. The separating method includes: preparing the bonded body with the bonding film; and applying energy for separation to the bonding film so that cleavage is generated within the bonding film due to breakage of a part of molecular bonds of the silicone compounds, to thereby separate the bonded body into the first and second base members.
摘要:
A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.
摘要:
A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
摘要:
A method of forming a bonded body comprised of a first base member, a second base member, and a first bonding film and a second bonding film provided between the first base member and the second base member is provided. The first bonding film and the second bonding film are constituted mainly of copper. The method is comprised of: forming the first bonding film on the first base member by using a chemical vapor-film formation method; forming the second bonding film on the second base member by using a chemical vapor-film formation method; bringing the first bonding film formed on the first base member into contact with the second bonding film formed on the second base member so that the first bonding film faces the second bonding film; and applying a compressive force to the first base member and the second base member so that the first bonding film and the second bonding film are bonded together to thereby obtain the bonded body. Two base members can be firmly and efficiently bonded together with high dimensional accuracy at a low temperature, and the two base members can be efficiently separated (peeled off) to each other after use of the bonded body. Further, a bonded body is also provided.
摘要:
A method for fabricating a semiconductor device, comprising: forming a semiconductor film on a substrate; and recrystallizing the semiconductor film using as a heat source flame of a gas burner that uses hydrogen and oxygen gas mixture as a fuel.
摘要:
A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
摘要:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a plurality of memory devices each having: a resistance change element, and a diode connected serially to the resistance change element; and a source conductive layer spreading two-dimensionally to be connected to one ends of the plurality of memory devices.