公开(公告)号：US07217655B2

公开(公告)日：2007-05-15

申请号：US11047652

申请日：2005-02-02

申请人： Cyril Cabral, Jr. ,  Stefanie R. Chiras ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Andrew J. Kellock ,  Judith M. Rubino ,  Roger Y. Tsai

发明人： Cyril Cabral, Jr. ,  Stefanie R. Chiras ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Andrew J. Kellock ,  Judith M. Rubino ,  Roger Y. Tsai

IPC分类号： H01L21/4763

CPC分类号： H01L21/2885 ,  C25D9/08 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2224/05007

摘要： A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

公开(公告)号：US20060283709A1

公开(公告)日：2006-12-21

申请号：US11155495

申请日：2005-06-20

申请人： Panayotis Andricacos ,  Emanuel Cooper ,  John Cotte ,  Hariklia Deligianni ,  Caliopo Andricacos

发明人： Panayotis Andricacos ,  Emanuel Cooper ,  John Cotte ,  Hariklia Deligianni ,  Caliopo Andricacos

IPC分类号： C25C7/02

CPC分类号： C25D17/10 ,  C25D11/02 ,  C25D17/12

摘要： Various counter-electrodes for electroplating, electrodeposition or anodizing of substrates are disclosed. According to certain embodiments, multi-segmented counter-electrodes are provided. According to additional embodiments, counter-electrodes having concave or convex top surfaces are provided. The disclosed counter-electrodes enable greater control over electrodeposition, electroetching and anodizing processes for resistive substrates, as well as more uniform plating and etching of resistive substrates. Methods for electroplating, electrodeposition or anodizing of resistive substrates using multi-segmented counter-electrodes are also provided.

摘要翻译： 公开了用于电镀，电沉积或阳极氧化基板的各种对电极。 根据某些实施例，提供多段对置电极。 根据另外的实施例，提供具有凹面或凸面顶面的对电极。 所公开的对电极能够更好地控制电沉积，电蚀和阳极氧化工艺的电阻衬底，以及更均匀的电镀和蚀刻电阻衬底。 还提供了使用多分段对电极的电镀，电沉积或阳极氧化电阻基板的方法。

公开(公告)号：US20060166474A1

公开(公告)日：2006-07-27

申请号：US11050790

申请日：2005-01-27

申请人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

发明人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

IPC分类号： H01L21/20

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。

公开(公告)号：US20060164194A1

公开(公告)日：2006-07-27

申请号：US11358823

申请日：2006-02-21

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20060017169A1

公开(公告)日：2006-01-26

申请号：US11168559

申请日：2005-06-29

申请人： Panayotis Andricacos ,  Hariklia Deligianni ,  John Dukovic ,  Daniel Edelstein ,  Wilma Horkans ,  Chao-Kun Hu ,  Jeffrey Hurd ,  Kenneth Rodbell ,  Cyprian Uzoh ,  Kwong-Hon Wong

发明人： Panayotis Andricacos ,  Hariklia Deligianni ,  John Dukovic ,  Daniel Edelstein ,  Wilma Horkans ,  Chao-Kun Hu ,  Jeffrey Hurd ,  Kenneth Rodbell ,  Cyprian Uzoh ,  Kwong-Hon Wong

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： C25D3/38 ,  C25D5/022 ,  H01L21/2885 ,  H01L21/76877 ,  H01L21/76885

摘要： A process is described for the fabrication of submicton interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

摘要翻译： 描述了用于集成电路芯片的亚微米互连结构的制造的过程。 通过从包含添加剂的浴中电镀Cu获得无空隙和无缝导体，并且通常用于沉积水平，光亮，延展性和低应力Cu金属。 这种方法在不留下空隙或接缝的情况下超滤特征的能力是独一无二的，优于其他沉积方法。 以这种方式电镀Cu的结构的电迁移阻力优于AlCu结构或使用不是电镀方法沉积的Cu制造的结构的电迁移电阻。

公开(公告)号：US20050199502A1

公开(公告)日：2005-09-15

申请号：US11123117

申请日：2005-05-06

申请人： Panayotis Andricacos ,  Hariklia Deligianni ,  Wilma Horkans ,  Keith Kwietniak ,  Michael Lane ,  Sandra Malhotra ,  Fenton McFeely ,  Conal Murray ,  Kenneth Rodbell ,  Philippe Vereecken

发明人： Panayotis Andricacos ,  Hariklia Deligianni ,  Wilma Horkans ,  Keith Kwietniak ,  Michael Lane ,  Sandra Malhotra ,  Fenton McFeely ,  Conal Murray ,  Kenneth Rodbell ,  Philippe Vereecken

IPC分类号： C25D5/18 ,  C25D7/12 ,  C25D5/02

CPC分类号： C25D5/18 ,  C25D7/12 ,  Y10S428/926 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12771 ,  Y10T428/12778 ,  Y10T428/12903

摘要： A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.

摘要翻译： 导电材料电镀在可镀敷的电阻金属阻挡层上，该层使用任选地包含超填充添加剂和抑制剂的电镀槽，并且通过改变作为电镀金属面积的函数的电流或电压。 还提供了一种结构，其包括衬底，位于衬底上的可镀金属阻挡层和位于可镀电阻金属阻挡层上的导电材料的相对连续的均匀电镀层。

公开(公告)号：US20050077173A1

公开(公告)日：2005-04-14

申请号：US10930823

申请日：2004-09-01

申请人： Keiichi Kurashina ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Brett Baker ,  Hariklia Deligianni ,  Phillipe Vereecken

发明人： Keiichi Kurashina ,  Mizuki Nagai ,  Satoru Yamamoto ,  Hiroyuki Kanda ,  Koji Mishima ,  Brett Baker ,  Hariklia Deligianni ,  Phillipe Vereecken

IPC分类号： C25D17/14 ,  C25D7/12 ,  C25D17/00 ,  H01L21/288

CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D17/004 ,  C25D17/008 ,  H01L21/2885

摘要： The present invention provides a plating apparatus for a substrate which can plate a substrate under uniform pressure without increasing a load to be applied while holding the entire surface of a porous member in contact with the surface, to be plated, of the substrate. The plating apparatus for a substrate, including: a substrate holder for holding a substrate; a cathode unit having a seal member for abutting against and sealing, in a water-tight manner, a peripheral portion of a surface, to be plated, of the substrate held by the substrate holder, and a cathode electrode which is brought into contact with the substrate to supply current to the substrate; an anode vertically moveable disposed in confronting relation to the surface, to be plated, of the substrate; a plating solution impregnated material disposed between the anode and the surface, to be plated, of the substrate, the plating solution impregnated material being made of a water-retentive material; and a porous member disposed between the plating solution impregnated material and the surface, to be plated, of the substrate; wherein the plating solution impregnated material is constructed of a plurality of separate members.

摘要翻译： 本发明提供了一种用于基板的电镀装置，其能够在保持多孔构件的整个表面与基板的被镀表面接触的同时，在均匀的压力下对基板进行平板化，而不增加要施加的载荷。 一种基板电镀装置，包括：用于保持基板的基板支架; 阴极单元，具有密封构件，该密封构件以水密方式邻接并密封被基板保持件保持的基板的待镀表面的周边部分，以及与基板保持件接触的阴极电极 所述基板向所述基板提供电流; 可垂直移动的阳极，其被布置成与所述基板的要被电镀的表面相对; 电镀溶液浸渍材料，其设置在阳极和要被电镀的表面之间，所述电镀液浸渍材料由保水材料制成; 以及设置在所述电镀溶液浸渍材料和要被电镀的所述表面的多孔构件之间; 其中所述电镀溶液浸渍材料由多个分开的构件构成。

公开(公告)号：US20050024169A1

公开(公告)日：2005-02-03

申请号：US10915742

申请日：2004-08-11

申请人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

发明人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

IPC分类号： H01H59/00 ,  H01H53/00

CPC分类号： H01H59/0009 ,  H01H2001/0068 ,  H01H2001/0078

摘要： A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

摘要翻译： 一种开关，其包括基板，细长可动部分，设置在所述部分一侧的一对电触点，设置在该部分的一侧并与所述一对电触头分离的致动电极，其中所述部分，所述触点 并且所述电极设置在所述基板上，其中所述细长可动部分被布置和尺寸设定成使得所述部件能够沿大致横向方向朝向所述触点移动; 可移动部分包括固定到头部的中心细长构件，其具有设置在一侧的电触头。 可移动部分的一端通过各种锚定装置附接到基板。

公开(公告)号：US20050007217A1

公开(公告)日：2005-01-13

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Buchwalter ,  John Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John Magerlein ,  Kenneth Stein ,  Richard Volant ,  James Tornello ,  Jennifer Lund

IPC分类号： H01H59/00 ,  H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400°C）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US5874199A

公开(公告)日：1999-02-23

申请号：US946797

申请日：1997-10-08

申请人： Hariklia Deligianni ,  William Hsioh-Lien Ma

发明人： Hariklia Deligianni ,  William Hsioh-Lien Ma

IPC分类号： H01L21/48 ,  H01L21/60 ,  H05K3/34 ,  G03C5/00

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H05K3/3473 ,  H01L2224/13099 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H05K2203/043 ,  H05K2203/054 ,  H05K2203/0577

摘要： Ball limited metallurgy is used in conjunction with defining a solder deposit volume using an aperture in a resist layer and reflow of electroplated solder materials deposited in that aperture, possibly with planarization after deposition to enhance volume accuracy, to develop solder deposits extending up to 10 .mu.m or more above the surface on which solder is deposited. Such deposits can be made at fine pitch and provide solder connections of high reliability even when the distance which must be bridged by the solder connection is not easily or reliably regulated.

摘要翻译： 结合使用球限制冶金，使用抗蚀剂层中的孔和沉积在该孔中的电镀焊料的回流来限定焊料沉积体积，可能在沉积之后进行平面化以提高体积精度，以开发延伸至10μm的焊料沉积 m以上的焊料沉积在表面上方。 这样的沉积物可以以细间距制造，并提供高可靠性的焊接连接，即使当焊接连接必须桥接的距离不容易或可靠地调节时。