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公开(公告)号：US20050007217A1
公开(公告)日：2005-01-13
申请号：US10604278
申请日：2003-07-08
申请人： Hariklia Deligianni , Panayotis Andricacos , L. Buchwalter , John Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John Magerlein , Kenneth Stein , Richard Volant , James Tornello , Jennifer Lund
发明人： Hariklia Deligianni , Panayotis Andricacos , L. Buchwalter , John Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John Magerlein , Kenneth Stein , Richard Volant , James Tornello , Jennifer Lund
CPC分类号： H01H59/0009 , H01H2001/0052 , Y10T29/49156 , Y10T29/49165 , Y10T29/49204
摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400°C）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。
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公开(公告)号：US20060164194A1
公开(公告)日：2006-07-27
申请号：US11358823
申请日：2006-02-21
申请人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John Magerlein , Kenneth Stein , Richard Volant , James Tornello , Jennifer Lund
发明人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John Magerlein , Kenneth Stein , Richard Volant , James Tornello , Jennifer Lund
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2001/0052 , Y10T29/49156 , Y10T29/49165 , Y10T29/49204
摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。
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公开(公告)号：US07581314B2
公开(公告)日：2009-09-01
申请号：US11358823
申请日：2006-02-21
申请人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John M. Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John H. Magerlein , Kenneth Stein , Richard P. Volant , James A. Tornello , Jennifer Lund
发明人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John M. Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John H. Magerlein , Kenneth Stein , Richard P. Volant , James A. Tornello , Jennifer Lund
IPC分类号： H01K3/10
CPC分类号： H01H59/0009 , H01H2001/0052 , Y10T29/49156 , Y10T29/49165 , Y10T29/49204
摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。
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公开(公告)号：US07202764B2
公开(公告)日：2007-04-10
申请号：US10604278
申请日：2003-07-08
申请人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John M. Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John H. Magerlein , Kenneth Stein , Richard P. Volant , James A. Tornello , Jennifer Lund
发明人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John M. Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John H. Magerlein , Kenneth Stein , Richard P. Volant , James A. Tornello , Jennifer Lund
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2001/0052 , Y10T29/49156 , Y10T29/49165 , Y10T29/49204
摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。
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公开(公告)号：US20050167780A1
公开(公告)日：2005-08-04
申请号：US10768773
申请日：2004-01-29
申请人： Daniel Edelstein , Panayotis Andricacos , John Cotte , Hariklia Deligianni , John Magerlein , Kevin Petrarca , Kenneth Stein , Richard Volant
发明人： Daniel Edelstein , Panayotis Andricacos , John Cotte , Hariklia Deligianni , John Magerlein , Kevin Petrarca , Kenneth Stein , Richard Volant
IPC分类号： H01F41/04 , H01F17/00 , H01L21/02 , H01L23/485 , H01L23/522 , H01L23/532 , H01L27/08 , H01L23/48 , H01L21/8222
CPC分类号： H01L24/12 , H01L23/5227 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L27/08 , H01L28/10 , H01L2224/0401 , H01L2224/04042 , H01L2224/05007 , H01L2224/05014 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05084 , H01L2224/05555 , H01L2224/05557 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/13007 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48744 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19042 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： An inductor and a method of forming and the inductor, the method including: (a) providing a semiconductor substrate; (b) forming a dielectric layer on a top surface of the substrate; (c) forming a lower trench in the dielectric layer; (d) forming a resist layer on a top surface of the dielectric layer; (e) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (f) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
摘要翻译： 一种电感器及其形成方法和电感器，所述方法包括：（a）提供半导体衬底; （b）在所述基板的顶表面上形成电介质层; （c）在介电层中形成下沟槽; （d）在介电层的顶表面上形成抗蚀剂层; （e）在所述抗蚀剂层中形成上沟槽，所述上沟槽对准所述下沟槽，所述上沟槽的底部通向所述下沟槽; 和（f）用导体完全填充下沟槽至少部分地填充上沟槽，以形成电感器。 所述电感器包括顶表面，底表面和侧壁，所述电感器的下部将固定距离延伸到形成在半导体衬底上的电介质层和在所述电介质层上方延伸的上部; 以及用于电接触所述电感器的装置。
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公开(公告)号：US20060105534A1
公开(公告)日：2006-05-18
申请号：US11320375
申请日：2005-12-28
申请人： Daniel Edelstein , Panayotis Andricacos , John Cotte , Hariklia Deligianni , John Magerlein , Kevin Petrarca , Kenneth Stein , Richard Volant
发明人： Daniel Edelstein , Panayotis Andricacos , John Cotte , Hariklia Deligianni , John Magerlein , Kevin Petrarca , Kenneth Stein , Richard Volant
IPC分类号： H01L21/8222
CPC分类号： H01L24/12 , H01L23/5227 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L27/08 , H01L28/10 , H01L2224/0401 , H01L2224/04042 , H01L2224/05007 , H01L2224/05014 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05084 , H01L2224/05555 , H01L2224/05557 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/13007 , H01L2224/13022 , H01L2224/13023 , H01L2224/13099 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48744 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19042 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： An inductor and a method of forming and the inductor, the method including: (a) forming a dielectric layer on a top surface of a substrate; (b) forming a lower trench in the dielectric layer; (c) forming a resist layer on a top surface of the dielectric layer; (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (e) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.
摘要翻译： 一种电感器及其形成方法和电感器，所述方法包括：（a）在基板的顶表面上形成电介质层; （b）在介电层中形成下沟槽; （c）在介电层的顶表面上形成抗蚀剂层; （d）在抗蚀剂层中形成上沟槽，上沟槽与下沟槽对准，上沟槽的底部通向下沟槽; 和（e）用导体完全填充下沟槽至少部分地填充上沟槽，以形成电感器。 所述电感器包括顶表面，底表面和侧壁，所述电感器的下部将固定距离延伸到形成在半导体衬底上的电介质层和在所述电介质层上方延伸的上部; 以及用于电接触所述电感器的装置。
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公开(公告)号：US20050156695A1
公开(公告)日：2005-07-21
申请号：US11053732
申请日：2005-02-08
申请人： Panayotis Andricacos , L. Buchwalter , Hariklia Deligianni , Robert Groves , Christopher Jahnes , Jennifer Lund , Michael Meixner , David Seeger , Timothy Sullivan , Ping-Chuan Wang
发明人： Panayotis Andricacos , L. Buchwalter , Hariklia Deligianni , Robert Groves , Christopher Jahnes , Jennifer Lund , Michael Meixner , David Seeger , Timothy Sullivan , Ping-Chuan Wang
CPC分类号： H01H59/0009 , H01H2001/0078
摘要： A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.
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公开(公告)号：US20060076685A1
公开(公告)日：2006-04-13
申请号：US11265302
申请日：2005-11-03
申请人： Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
发明人： Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
IPC分类号： H01L23/48
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/6708 , H01L21/76849 , H01L21/7685 , H01L21/76874 , H01L21/76883
摘要： Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
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公开(公告)号：US20060163083A1
公开(公告)日：2006-07-27
申请号：US11038236
申请日：2005-01-21
申请人： Panayotis Andricacos , Donald Canaperi , Emanuel Cooper , John Cotte , Hariklia Deligianni , Laertis Economikos , Daniel Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew Mansson , Erick Walton , Alan West , Caliopi Andricacos
发明人： Panayotis Andricacos , Donald Canaperi , Emanuel Cooper , John Cotte , Hariklia Deligianni , Laertis Economikos , Daniel Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew Mansson , Erick Walton , Alan West , Caliopi Andricacos
IPC分类号： B23H3/00
CPC分类号： C25F3/02 , B23H5/08 , C09G1/04 , H01L21/32125
摘要： Methods and compositions for electro-chemical-mechanical polishing (e-CMP) of silicon chip interconnect materials, such as copper, are provided. The methods include the use of compositions according to the invention in combination with pads having various configurations.
摘要翻译： 提供了诸如铜之类的硅芯片互连材料的电化学机械抛光（e-CMP）的方法和组合物。 所述方法包括使用根据本发明的组合物与具有各种构型的垫组合。
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公开(公告)号：US20050001325A1
公开(公告)日：2005-01-06
申请号：US10611931
申请日：2003-07-03
申请人： Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
发明人： Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
IPC分类号： H01L21/00 , H01L21/288 , H01L21/768 , H01L23/48
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/6708 , H01L21/76849 , H01L21/7685 , H01L21/76874 , H01L21/76883
摘要： Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
摘要翻译： 通过在衬垫材料的存在下使用选择性蚀刻和/或选择性电镀选择性地封盖铜来制造图案化的铜结构。 提供了用于解决在电蚀和/或电镀过程中作为电解质增加的电阻路径从晶片边缘向内流动的问题的装置。
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