公开(公告)号：US20050085058A1

公开(公告)日：2005-04-21

申请号：US10690029

申请日：2003-10-20

申请人： Garo Derderian ,  Cem Basceri

发明人： Garo Derderian ,  Cem Basceri

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/42 ,  C23C16/56 ,  H01L21/20 ,  H01L21/285 ,  H01L21/44 ,  H01L21/768

CPC分类号： C23C16/0227 ,  C23C16/0254 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/42 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855

摘要： The invention includes methods of forming conductive metal suicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising an exposed elemental silicon containing surface. At least one of a crystalline form TiN, WN, elemental form W, or SiC comprising layer is deposited onto the exposed elemental silicon containing surface to a thickness no greater than 50 Angstroms. Such layer is exposed to plasma and a conductive reaction layer including at least one of an elemental metal or metal rich silicide is deposited onto the plasma exposed layer. At least one of metal of the conductive reaction layer or elemental silicon of the substrate is diffused along columnar grain boundaries of the crystalline form layer effective to cause a reaction of metal of the conductive reaction layer with elemental silicon of the substrate to form a conductive metal silicide comprising contact region electrically connecting the conductive reaction layer with the substrate. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括通过金属与硅的反应形成导电金属硅化物的方法。 在一个实施方案中，这种方法包括提供包括暴露的含元素硅的表面的半导体衬底。 将结晶形态TiN，WN，元素形式W或包含SiC的层中的至少一种沉积到暴露的含元素硅表面上至不大于50埃的厚度。 这种层暴露于等离子体，并且包含元素金属或富金属硅化物中的至少一种的导电反应层沉积到等离子体暴露层上。 基板的导电性反应层或元素硅的金属中的至少一种沿结晶层的柱状晶界扩散，有效地导致导电性反应层的金属与基板的元素硅反应形成导电性金属 硅化物，其包括将导电反应层与基底电连接的接触区域。 考虑了其他方面和实现。

公开(公告)号：US20050064725A1

公开(公告)日：2005-03-24

申请号：US10671922

申请日：2003-09-24

申请人： Garo Derderian ,  Gurtej Sandhu

发明人： Garo Derderian ,  Gurtej Sandhu

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/31 ,  H01L21/44 ,  H01L21/469

CPC分类号： C23C16/45536 ,  C23C16/44 ,  H01L21/28562

摘要： The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least one of the precursors is asymmetric with respect to a physical property. A field influencing the asymmetric physical property is oriented within the reaction chamber, and is utilized to affect alignment of the precursor having the asymmetric property as the material is formed. The asymmetric physical property can, for example, be an anisotropic charge distribution associated with the precursor, and in such aspect, the field utilized to influence the asymmetric physical property can be an electric field provided within the reaction chamber and/or a magnetic field provided within the reaction chamber. The methodology of the present invention can be utilized in atomic layer deposition processes.

公开(公告)号：US20050045100A1

公开(公告)日：2005-03-03

申请号：US10959448

申请日：2004-10-05

申请人： Garo Derderian

发明人： Garo Derderian

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/4412 ,  C23C16/45508 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/4558

摘要： Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a method for depositing material onto a micro-device workpiece includes flowing a first gas along a first vector across a first portion and toward a center of the micro-device workpiece and flowing a second gas along a second vector across a second portion and toward the center of the micro-device workpiece. The second vector is transverse to the first vector. The method can further include exhausting the first gas from a region proximate to the center of the micro-device workpiece and exhausting the second gas from the region proximate to the center of the micro-device workpiece. Flowing the first gas can include depositing the first gas uniformly from a perimeter region to a center region of the micro-device workpiece.

摘要翻译： 本文公开了反应器，具有反应室的系统以及将材料沉积到微器件工件上的方法。 在一个实施例中，用于将材料沉积到微器件工件上的方法包括使第一气体沿着第一向量跨越微器件工件的第一部分并朝着微器件工件的中心流动，并使第二气体沿着第二向量横穿第二 部分并朝向微器件工件的中心。 第二个向量横向于第一个向量。 该方法还可以包括从靠近微器件工件的中心的区域排出第一气体，并从靠近微器件工件的中心的区域排出第二气体。 流动第一气体可以包括从第一气体均匀地沉积从微器件工件的周边区域到中心区域。

公开(公告)号：US20050022739A1

公开(公告)日：2005-02-03

申请号：US10933605

申请日：2004-09-02

申请人： Craig Carpenter ,  Allen Mardian ,  Ross Dando ,  Kimberly Tschepen ,  Garo Derderian

发明人： Craig Carpenter ,  Allen Mardian ,  Ross Dando ,  Kimberly Tschepen ,  Garo Derderian

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

公开(公告)号：US06833576B2

公开(公告)日：2004-12-21

申请号：US10002779

申请日：2001-10-29

申请人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

发明人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

IPC分类号： H01L27108

CPC分类号： H01L28/84 ,  H01L21/31637 ,  H01L28/55 ,  H01L28/65

摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.

摘要翻译： 具有增加的电容的电容器包括增强的表面积（粗糙表面）导电层或与高介电常数材料相容的其它层。 在一种方法中，用于这种电容器的增强表面积导电层是通过在高温或高于500℃，低压75托或更低，最理想的5托或更低的高温下处理氧化钌层形成的， 产生具有至少约100埃的平均特征尺寸的纹理表面的粗糙钌层。 初始氧化钌层可以通过化学气相沉积技术或溅射技术等来提供。 该层可以形成在下面的导电层上。 处理可以在惰性环境或还原环境中进行。 可以在处理期间或之后使用供氮环境或供氮还原环境以钝化钌以改善与高介电常数电介质材料的相容性。 氧化环境中的处理也可以进行以钝化粗糙层。 可以使用粗糙化的钌层来形成增强表面积的导电层。 所形成的增强表面积导电层可以在诸如DRAM等的存储单元中的集成电路中形成存储电容器的板。 在另一种方法中，提供氮化钨层作为这种电容器的第一电极。 电容器或至少氮化钨层被退火以增加电容器的电容。

公开(公告)号：US06696745B2

公开(公告)日：2004-02-24

申请号：US10087535

申请日：2002-02-27

申请人： Gurtej S. Sandhu ,  Garo Derderian

发明人： Gurtej S. Sandhu ,  Garo Derderian

IPC分类号： H01L21425

CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/75

摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

摘要翻译： 用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第 高介电材料。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

公开(公告)号：US06429127B1

公开(公告)日：2002-08-06

申请号：US09589849

申请日：2000-06-08

申请人： Garo Derderian ,  Vishnu K. Agarwal

发明人： Garo Derderian ,  Vishnu K. Agarwal

IPC分类号： H01L2144

CPC分类号： H01L28/84 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75

摘要： A method for forming a rough ruthenium-containing layer on the surface of a substrate assembly includes providing a ruthenium-containing precursor into the reaction chamber. A rough ruthenium layer may be deposited on the surface of the substrate assembly at a rate of about 100 Å/minute to about 500 Å/minute using the ruthenium-containing precursor. Further, a rough ruthenium oxide layer may be formed by providing a ruthenium-containing precursor and an oxygen-containing precursor into the reaction chamber to deposit the rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute. An anneal of the layers may be performed to further increase the roughness. In addition, conductive structures including a rough ruthenium layer or a rough ruthenium oxide layer are provided. Such layers may be used in conjunction with non-rough ruthenium and/or non-rough ruthenium oxide layers to form conductive structures. For example, such structures may be part of a capacitor structure, e.g., bottom electrode of a capacitor.

公开(公告)号：US06200874B1

公开(公告)日：2001-03-13

申请号：US08918634

申请日：1997-08-22

申请人： Gurtej S. Sandhu ,  Garo Derderian

发明人： Gurtej S. Sandhu ,  Garo Derderian

IPC分类号： H01L2120

CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/75

摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

摘要翻译： 用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第 高介电材料。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

公开(公告)号：US6124626A

公开(公告)日：2000-09-26

申请号：US383052

申请日：1999-08-25

申请人： Gurtej S. Sandhu ,  Garo Derderian

发明人： Gurtej S. Sandhu ,  Garo Derderian

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/31 ,  H01L21/425 ,  H01L21/469 ,  H01L21/8242 ,  H01L23/58

CPC分类号： H01L28/40 ,  H01L28/65 ,  H01L28/75 ,  H01L27/1085

摘要： Formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

摘要翻译： 电容器的形成包括通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在高电介质材料上形成第二电极。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。