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    ION BEAM TUNING
    91.
    发明申请
    ION BEAM TUNING 有权
    离子束调谐

    公开(公告)号：US20120068081A1

    公开(公告)日：2012-03-22

    申请号：US12887068

    申请日：2010-09-21

    Applicant: Shengwu Chang ,  Joseph C. Olson ,  Frank Sinclair ,  Matthew P. McClellan

    Inventor： Shengwu Chang ,  Joseph C. Olson ,  Frank Sinclair ,  Matthew P. McClellan

    IPC: H01J37/317 ,  H01J37/12 ,  H01J37/147

    CPC classification number: H01J37/3171 ,  H01J37/21 ,  H01J2237/216 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

    Abstract: A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.

    Abstract translation: 束线离子注入机包括被配置为产生离子束的离子源，扫描器，被配置为扫描离子束以产生具有从扫描原点发散的轨迹的扫描离子束;以及聚焦元件，其具有位于 扫描器被配置为将离子束聚焦到扫描原点处的焦点。 离子束调谐的方法包括产生离子束，将离子束聚焦到位于扫描原点的焦点，并扫描离子束以产生具有与扫描原点分离的轨迹的扫描离子束。

    MELT PURIFICATION AND DELIVERY SYSTEM
    96.
    发明申请
    MELT PURIFICATION AND DELIVERY SYSTEM 有权
    熔融净化和输送系统

    公开(公告)号：US20100050686A1

    公开(公告)日：2010-03-04

    申请号：US12487119

    申请日：2009-06-18

    Applicant: Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson ,  Julian G. Blake

    Inventor： Peter L. Kellerman ,  Frank Sinclair ,  Frederick Carlson ,  Julian G. Blake

    IPC: B01D9/04 ,  F27D11/00

    CPC classification number: C30B11/003 ,  C01B33/037 ,  C30B11/001 ,  C30B28/06 ,  C30B29/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/406 ,  C30B29/60

    Abstract: An apparatus to purify a melt is disclosed. A first portion of a melt in a chamber is frozen in a first direction. A fraction of the first portion is melted in the first direction. A second portion of the melt remains frozen. The melt flows from the chamber and the second portion is removed from the chamber. The freezing concentrates solutes in the melt and second portion. The second portion may be a slug with a high solute concentration. This system may be incorporated into a sheet forming apparatus with other components such as, for example, pumps, filters, or particle traps.

    Abstract translation: 公开了一种净化熔体的设备。 室中的熔体的第一部分在第一方向上被冷冻。 第一部分的一部分在第一方向熔化。 熔体的第二部分保持冷冻。 熔体从腔室流出，第二部分从腔室中移出。 冷冻浓缩物溶解在熔体和第二部分中。 第二部分可以是高溶质浓度的塞子。 该系统可以结合到具有其它部件例如泵，过滤器或颗粒捕集器的片材成形设备中。

    PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS
    97.
    发明申请
    PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
    细粒束辅助修饰薄膜材料

    公开(公告)号：US20090124065A1

    公开(公告)日：2009-05-14

    申请号：US12269327

    申请日：2008-11-12

    Applicant: Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

    Inventor： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

    IPC: H01L21/20

    CPC classification number: H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

    Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

    Abstract translation: 公开了用于处理衬底的方法的几个实例。 在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。

    Serial wafer handling mechanism
    99.
    发明授权
    Serial wafer handling mechanism 失效
    串行晶片处理机构

    公开(公告)号：US06429139B1

    公开(公告)日：2002-08-06

    申请号：US09466628

    申请日：1999-12-17

    Applicant: Kevin Thomas Ryan ,  Peter Lawrence Kellerman ,  Frank Sinclair ,  Ernest Everett Allen ,  Roger Bradford Fish

    Inventor： Kevin Thomas Ryan ,  Peter Lawrence Kellerman ,  Frank Sinclair ,  Ernest Everett Allen ,  Roger Bradford Fish

    IPC: H01L21302

    CPC classification number: H01L21/68707 ,  H01L21/67742 ,  H01L21/67745 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/141 ,  Y10S438/908 ,  Y10S438/913 ,  Y10T29/41

    Abstract: A wafer handling system for a wafer processing apparatus includes a wafer load lock chamber, a wafer processing chamber and a transfer chamber operatively coupled to the wafer load lock chamber and the wafer processing chamber. The transfer chamber includes a wafer transfer mechanism comprising a transfer arm pivotably coupled to a portion of the transfer chamber which forms an axis. The transfer arm is operable to rotate about the axis to transfer a wafer between the wafer load lock chamber and the process chamber in a single axis wafer movement. The invention also includes a method of transferring a wafer to a wafer processing apparatus. The method includes loading a wafer into a wafer load lock chamber and rotating a transfer arm into the wafer load lock chamber to retrieve the wafer therein. The method further includes rotating the transfer arm out of the wafer load lock chamber and into a process chamber to deposit the wafer therein, wherein the rotating of the transfer arm occurs in a single axis wafer movement.

    Abstract translation: 用于晶片处理设备的晶片处理系统包括晶片加载锁定室，晶片处理室和可操作地耦合到晶片加载锁定室和晶片处理室的传送室。 传送室包括晶片传送机构，其包括可枢转地联接到形成轴的传送室的一部分的传送臂。 传送臂可操作以围绕轴线旋转，以在单轴晶片运动中在晶片加载锁定室和处理室之间传送晶片。 本发明还包括将晶片转移到晶片处理装置的方法。 该方法包括将晶片加载到晶片加载锁定室中并将转移臂旋转到晶片加载锁定室中以在其中回收晶片。 该方法还包括将传送臂旋转离开晶片装载锁定室并进入处理室以将晶片沉积在其中，其中转印臂的旋转以单轴晶片运动发生。

    Seam welder
    100.
    发明授权
    Seam welder 失效
    接缝焊工

    公开(公告)号：US5865942A

    公开(公告)日：1999-02-02

    申请号：US861275

    申请日：1997-05-21

    Applicant: Frank Sinclair

    Inventor： Frank Sinclair

    IPC: B29C65/20 ,  B32B35/00 ,  B44C7/00

    CPC classification number: B29C66/4322 ,  B29C65/20 ,  B29C66/1122 ,  B29C66/133 ,  B29C66/135 ,  B29C66/43 ,  B29C66/431 ,  B29C66/8167 ,  B29C66/8362 ,  B29C66/86523 ,  B29C66/4332 ,  B29C66/81417 ,  B29C66/81422 ,  Y10T156/1715 ,  Y10T156/1741 ,  Y10T156/1788 ,  Y10T156/18

    Abstract: A hot wedge, automatic seam welder is disclosed. The welder is comprised of a chassis having a base plate, a motor housing and a support arm extending from the motor housing. An S-shaped guide for guiding opposing sheets of material is between the base plate and the motor housing. Disposed downstream from the motor housing, depending from the support arm, is vertically-movable suspension for a driven upper pressure roller which is occludable with a driven lower pressure roller on the base plate. Also depending from the support arm is vertically-movable and adjustable suspension for the hot wedge. A horn-shaped shroud for guiding material over and under the wedge, and for shrouding the wedge when in its disengaged mode, is disposed upstream from the wedge. Guides for performing lap welds, fin welds and hem welds, as well as many variations thereupon, are also disclosed.

    Abstract translation: 公开了一种热楔，自动缝焊机。 焊机由具有基板，马达壳体和从马达壳体延伸的支撑臂的底盘组成。 用于引导相对的材料片材的S形引导件位于基板和马达壳体之间。 从支撑臂悬挂的电动机壳体的下游设置有用于被驱动的上压辊的可垂直移动的悬架，该驱动上压辊可与基板上的从动下压辊闭塞。 也可以从支撑臂垂直移动和可调节悬挂的热楔。 用于在楔形物之上和之下引导材料的角形护罩，以及当处于其脱离模式时用于遮蔽楔形物的楔形护罩设置在楔形物的上游。 还公开了用于执行搭接焊接，翅片焊接和折边焊接的指导，以及其上的许多变化。

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