利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

52 条记录 (耗时 0.022 秒)

    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM
    1.
    发明申请
    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM 审中-公开
    用于生产质量分析离子束的系统和方法

    公开(公告)号：US20120168622A1

    公开(公告)日：2012-07-05

    申请号：US12981002

    申请日：2010-12-29

    申请人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    发明人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    IPC分类号： H01J49/30

    CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/20 ,  H01J49/30 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/20221

    摘要： An implantation system includes an ion extraction plate having a set of apertures configured to extract ions from an ion source to form a plurality of beamlets. A magnetic analyzer is configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to a principle axis of the beamlets. A mass analysis plate includes a set of apertures wherein first ion species having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species having a second mass/charge ratio are blocked by the mass analysis plate. A workpiece holder is configured to move with respect to the mass analysis plate in a second direction perpendicular to the first direction, wherein a pattern of ions transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate.

    摘要翻译： 植入系统包括具有一组孔口的离子提取板，其被配置为从离子源提取离子以形成多个子束。 磁分析器被配置为提供磁场，以在大体上垂直于子束的主轴的第一方向上偏转子束中的离子。 质量分析板包括一组孔，其中具有第一质量/荷率的第一离子种类通过质量分析板传输，具有第二质量/荷重比的第二离子种被质量分析板阻挡。 工件保持器构造成在与第一方向垂直的第二方向上相对于质量分析板移动，其中通过质量分析板传输的离子图案在衬底处沿着第一方向形成连续的离子束电流。

    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION
    2.
    发明申请
    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION 审中-公开
    用于生产用于高通量运行的质量分析离子束的系统和方法

    公开(公告)号：US20130001414A1

    公开(公告)日：2013-01-03

    申请号：US13175404

    申请日：2011-07-01

    申请人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    发明人： Victor M. Benveniste ,  Frank Sinclair ,  Svetlana Radovanov ,  Bon-Woong Koo

    IPC分类号： H01J49/10

    CPC分类号： H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/055 ,  H01J2237/057

    摘要： A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.

    摘要翻译： 用于生产用于植入工件的质量分析离子束的系统包括具有一组具有孔的纵向轴线的孔的抽出板。 该组孔被构造成从离子源提取离子以形成多个子束。 该系统还包括分析磁体区域，其被配置为提供磁场以沿着大致垂直于孔的纵向轴线的第一方向偏转子束中的离子。 该系统还包括质量分析板，该质量分析板具有一组孔口，其被配置为透射具有第一质量/带电比的第一离子种类并阻挡具有第二质量/加料比的第二离子种类和被配置为相对于 质量分析板沿第一方向。

    Deceleration lens
    6.
    发明授权
    Deceleration lens 有权
    减速镜

    公开(公告)号：US08481960B2

    公开(公告)日：2013-07-09

    申请号：US13167399

    申请日：2011-06-23

    申请人： Svetlana Radovanov ,  Jason Schaller ,  Richard White ,  Kevin Verrier ,  James Blanchette ,  Bon-Woong Koo ,  Eric Hermanson ,  Kevin Daniels

    发明人： Svetlana Radovanov ,  Jason Schaller ,  Richard White ,  Kevin Verrier ,  James Blanchette ,  Bon-Woong Koo ,  Eric Hermanson ,  Kevin Daniels

    IPC分类号： G21K1/08 ,  H01J3/14 ,  H01J3/26 ,  H01J49/42

    CPC分类号： H01J37/12 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/032 ,  H01J2237/0475

    摘要： A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.

    摘要翻译： 公开了用于控制离子束的系统和方法。 公开了用于离子注入机的减速透镜。 透镜可以包括抑制电极，第一和第二聚焦电极以及第一和第二屏蔽。 屏蔽件可以位于抑制电极的上部和下部之间。 第一和第二屏蔽件位于离子注入机的第一聚焦电极和端电极之间。 如此定位，第一和第二屏蔽件保护所述第一和第二聚焦电极的支撑表面不会沉积从所述离子束产生的回流颗粒。 在一些实施例中，第一和第二聚焦电极可以是可调节的，以使电极表面相对于离子束的方向被调整。 通过调整聚焦电极的角度，可以控制离子束的平行度。 描述和要求保护其他实施例。

    DECELERATION LENS
    7.
    发明申请
    DECELERATION LENS 有权
    减光镜

    公开(公告)号：US20120001087A1

    公开(公告)日：2012-01-05

    申请号：US13167399

    申请日：2011-06-23

    申请人： Svetlana Radovanov ,  Jason Schaller ,  Richard M. White ,  Kevin R. Verrier ,  James Blanchette ,  Bon-Woong Koo ,  Eric d. Hermanson ,  Kevin Daniels

    发明人： Svetlana Radovanov ,  Jason Schaller ,  Richard M. White ,  Kevin R. Verrier ,  James Blanchette ,  Bon-Woong Koo ,  Eric d. Hermanson ,  Kevin Daniels

    IPC分类号： H01J3/14

    CPC分类号： H01J37/12 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/032 ,  H01J2237/0475

    摘要： A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.

    摘要翻译： 公开了用于控制离子束的系统和方法。 公开了用于离子注入机的减速透镜。 透镜可以包括抑制电极，第一和第二聚焦电极以及第一和第二屏蔽。 屏蔽件可以位于抑制电极的上部和下部之间。 第一和第二屏蔽件位于离子注入机的第一聚焦电极和端电极之间。 如此定位，第一和第二屏蔽件保护所述第一和第二聚焦电极的支撑表面不会沉积从所述离子束产生的回流颗粒。 在一些实施例中，第一和第二聚焦电极可以是可调节的，以使电极表面相对于离子束的方向被调整。 通过调整聚焦电极的角度，可以控制离子束的平行度。 描述和要求保护其他实施例。

    Plasma potential modulated ion implantation system
    8.
    发明授权
    Plasma potential modulated ion implantation system 有权
    等离子体电位调制离子注入系统

    公开(公告)号：US09297063B2

    公开(公告)日：2016-03-29

    申请号：US13457451

    申请日：2012-04-26

    申请人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    发明人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    IPC分类号： H01J37/317 ,  H01J37/16 ,  C23C14/48 ,  C23C16/04 ,  H01J37/32

    CPC分类号： C23C14/48 ,  C23C16/042 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0817 ,  H01J2237/083

    摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.

    摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。

    Plasma Potential Modulated ION Implantation System
    9.
    发明申请
    Plasma Potential Modulated ION Implantation System 有权
    等离子体电位调制离子注入系统

    公开(公告)号：US20130287964A1

    公开(公告)日：2013-10-31

    申请号：US13457451

    申请日：2012-04-26

    申请人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    发明人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    IPC分类号： C23C14/04 ,  C23C14/48

    CPC分类号： C23C14/48 ,  C23C16/042 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0817 ,  H01J2237/083

    摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.

    摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。