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公开(公告)号：US09859361B2
公开(公告)日：2018-01-02
申请号：US15016680
申请日：2016-02-05
IPC分类号： H01L29/06 , H01L21/04 , H01L21/265 , H01L21/266 , H01L29/16 , H01L29/20
CPC分类号： H01L29/0634 , H01L21/046 , H01L21/0465 , H01L21/26546 , H01L21/266 , H01L29/0615 , H01L29/1608 , H01L29/2003
摘要： A semiconductor device includes a semiconductor body having a semiconductor body material with a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon, at least one first semiconductor region doped with dopants of a first conductivity type and having a columnar shape that extends into the semiconductor body along an extension direction, wherein a respective width of the at least one first semiconductor region continuously increases along the extension direction; and at least one second semiconductor region included in the semiconductor body. The at least one second semiconductor region is arranged adjacent to the at least one first semiconductor region, and is doped with dopants of a second conductivity type complementary to the first conductivity type.
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92.发明申请公开(公告)号：US20170345818A1
公开(公告)日：2017-11-30
申请号：US15681607
申请日：2017-08-21
发明人： Roland Rupp , Romain Esteve , Dethard Peters
IPC分类号： H01L27/06 , H01L29/739 , H01L29/16 , H01L29/10 , H01L29/04 , H01L29/40 , H01L29/861
CPC分类号： H01L27/0664 , H01L29/045 , H01L29/1095 , H01L29/1608 , H01L29/407 , H01L29/7397 , H01L29/8613
摘要： A semiconductor device includes trench gate structures in a semiconductor body with hexagonal crystal lattice. A mean surface plane of a first surface is tilted to a crystal direction by an off-axis angle, wherein an absolute value of the off-axis angle is in a range from 2 degree to 12 degree. The trench gate structures extend oriented along the crystal direction. Portions of the semiconductor body between neighboring trench gate structures form transistor mesas. Sidewalls of the transistor mesas deviate from a normal to the mean surface plane by not more than 5 degree.
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公开(公告)号：US09704750B2
公开(公告)日：2017-07-11
申请号：US15224099
申请日：2016-07-29
CPC分类号： H01L21/7813 , H01L21/02002 , H01L21/76251 , H01L21/78 , H01L22/14 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/7395 , H01L29/8611 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A method of forming a semiconductor device and a semiconductor device are provided. The method includes providing a wafer stack including a carrier wafer comprising graphite and a device wafer comprising a wide band-gap semiconductor material and having a first side and a second side opposite the first side, the second side being attached to the carrier wafer, defining device regions of the wafer stack, partly removing the carrier wafer so that openings are formed in the carrier wafer arranged within respective device regions and that the device wafer is supported by a residual of the carrier wafer; and further processing the device wafer while the device wafer remains supported by the residual of the carrier wafer.
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94.发明申请Method for Forming a Wafer Structure, a Method for Forming a Semiconductor Device and a Wafer Structure 有权形成晶片结构的方法，形成半导体器件的方法和晶片结构公开(公告)号：US20170033010A1
公开(公告)日：2017-02-02
申请号：US15224076
申请日：2016-07-29
CPC分类号： H01L21/7813 , H01L21/02002 , H01L21/76254 , H01L21/78 , H01L29/1608 , H01L29/861
摘要： A method of producing a semiconductor device and a wafer structure are provided. The method includes attaching a donor wafer comprising silicon carbide to a carrier wafer comprising graphite, splitting the donor wafer along an internal delamination layer so that a split layer comprising silicon carbide and attached to the carrier wafer is formed, removing the carrier wafer above an inner portion of the split layer while leaving a residual portion of the carrier wafer attached to the split layer to form a partially supported wafer, and further processing the partially supported wafer.
摘要翻译： 提供了制造半导体器件和晶片结构的方法。 该方法包括将包含碳化硅的施主晶片附接到包括石墨的载体晶片，沿着内部分层分离施主晶片，使得形成包含碳化硅并附着到载体晶片的分裂层，将载体晶片移除在内部 同时留下附着到分离层的载体晶片的残留部分以形成部分支撑的晶片，并且进一步处理部分支撑的晶片。
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公开(公告)号：US20170018614A1
公开(公告)日：2017-01-19
申请号：US15210106
申请日：2016-07-14
发明人： Roland Rupp , Guenther Ruhl , Hans-Joachim Schulze
IPC分类号： H01L29/16 , H01L29/08 , H01L21/324 , H01L23/535 , H01L21/02 , H01L21/265 , H01L29/36 , H01L29/417
CPC分类号： H01L29/1608 , H01L21/02444 , H01L21/02494 , H01L21/02529 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L21/26506 , H01L21/324 , H01L29/0804 , H01L29/0821 , H01L29/083 , H01L29/1606 , H01L29/36 , H01L29/413 , H01L29/41725
摘要： A method for forming a semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate. The method further includes forming a silicon carbide layer on the at least one graphene layer.
摘要翻译： 一种形成半导体器件的方法包括在半导体衬底的表面上形成至少一个石墨烯层。 该方法还包括在至少一个石墨烯层上形成碳化硅层。
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96.发明授权Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching 有权通过局部加热一个或多个金属化层并通过选择性蚀刻来制造器件的方法公开(公告)号：US09391154B2
公开(公告)日：2016-07-12
申请号：US14934877
申请日：2015-11-06
发明人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
IPC分类号： H01L29/47 , H01L29/80 , H01L29/872
CPC分类号： H01L29/47 , H01L21/0485 , H01L21/0495 , H01L21/268 , H01L21/32134 , H01L23/528 , H01L29/1608 , H01L29/417 , H01L29/41725 , H01L29/42316 , H01L29/6606 , H01L29/66068 , H01L29/66901 , H01L29/66909 , H01L29/808 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.
摘要翻译： 一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包含蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层， 通过用蚀刻介质蚀刻以形成该器件。
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97.发明申请公开(公告)号：US20160104779A1
公开(公告)日：2016-04-14
申请号：US14974553
申请日：2015-12-18
发明人： Roland Rupp , Christian Hecht , Jens Konrath , Wolfgang Bergner , Hans-Joachim Schulze , Rudolf Elpelt
CPC分类号： H01L29/1608 , H01L21/045 , H01L21/046 , H01L21/047 , H01L21/0495 , H01L21/565 , H01L23/291 , H01L23/293 , H01L23/3135 , H01L23/3171 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/6606 , H01L29/66068 , H01L29/7811 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.
摘要翻译： 碳化硅器件包括碳化硅衬底，无机钝化层结构和成型材料层。 无机钝化层结构至少部分地覆盖碳化硅衬底的主表面，并且模制材料层被布置成与无机钝化层结构相邻。
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公开(公告)号：US20150144966A1
公开(公告)日：2015-05-28
申请号：US14548709
申请日：2014-11-20
IPC分类号： H01L29/36 , H01L29/16 , H01L29/872
CPC分类号： H01L29/36 , H01L29/1608 , H01L29/66143 , H01L29/872
摘要： A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface. A doping concentration of the first conduction type on the contact surface varies along a direction of the contact surface.
摘要翻译： 半导体部件包括半导体主体上的第一导电型半导体本体和金属层，其中，金属层与半导体本体沿接触面形成肖特基接触。 接触表面上的第一导电类型的掺杂浓度沿着接触表面的方向变化。
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99.发明申请公开(公告)号：US20150008447A1
公开(公告)日：2015-01-08
申请号：US13933686
申请日：2013-07-02
CPC分类号： H01L29/0607 , H01L29/1608 , H01L29/32 , H01L29/34 , H01L29/66068 , H01L29/7827
摘要： A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including a doping of ions of a transition metal or including an increased density of intrinsic point defects in comparison to a density of intrinsic point defects of the buried lateral silicon carbide edge termination region.
摘要翻译： 碳化硅器件包括在外延碳化硅层内具有第一导电类型和掩埋侧向碳化硅边缘终止区的外延碳化硅层并且具有第二导电类型。 掩埋的横向碳化硅边缘终止区域被碳化硅表面层覆盖，该碳化硅表面层包括掺杂过渡金属的离子，或者与埋入的侧向碳化硅边缘的固有点缺陷的密度相比包括增加的本征点缺陷密度 终止区域。
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公开(公告)号：US20140353667A1
公开(公告)日：2014-12-04
申请号：US13906738
申请日：2013-05-31
IPC分类号： H01L29/812 , H01L29/04 , H01L29/66 , H01L29/16
CPC分类号： H01L29/66909 , H01L29/04 , H01L29/1608 , H01L29/267 , H01L29/47 , H01L29/66068 , H01L29/66431 , H01L29/66734 , H01L29/66787 , H01L29/66848 , H01L29/7827 , H01L29/8122 , H01L29/872
摘要： A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and having two side walls, and two second semiconductor regions of a second conductivity type arranged next to the semiconductor mesa. Each of the two second semiconductor regions forms a pn-junction at least with the drift layer. A rectifying junction is formed at least at one of the two side walls of the mesa. Further, a method for producing a heterojunction semiconductor device is provided.
摘要翻译： 提供了具有主表面的半导体本体的场效应半导体器件。 半导体本体在基本上垂直于主表面的垂直横截面中包括第一导电类型的漂移层，邻接漂移层的第一导电类型的半导体台面，基本上延伸到主表面并具有两个侧面 壁，以及布置在半导体台面旁边的第二导电类型的两个第二半导体区域。 两个第二半导体区域中的每一个至少与漂移层形成pn结。 在台面的两个侧壁中的至少一个侧面上形成整流结。 此外，提供了一种异质结半导体器件的制造方法。
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