公开(公告)号：US08142678B2

公开(公告)日：2012-03-27

申请号：US11499722

申请日：2006-08-07

申请人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： C04B35/00

CPC分类号： C04B35/499 ,  C04B35/472 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/79 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316

摘要： A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of .

摘要翻译： 由ABO3表示单晶结构或单轴取向晶体结构的钙钛矿型氧化物。 场地A包括Pb作为主要成分，场地B包括多个元素。 钙钛矿型氧化物包括选自四方晶系，菱方晶，斜方晶，立方晶，假立方晶系和单斜晶系的多个结晶相，多个结晶相朝<100>方向取向。

公开(公告)号：US07999441B2

公开(公告)日：2011-08-16

申请号：US12237933

申请日：2008-09-25

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC分类号： H01L41/04

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by PδMAX; and a point located on a circumference of a reference-circle having PδMAX as a center and having a minimum difference in displacement from PδMAX is expressed by PδA, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining PδMAX and PδA, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

摘要翻译： 压电致动器包括在两个电极层和隔膜之间的压电膜。 假设：所有材料的每个弹性系数是各向同性的，并且通过电场的压电膜的失真量在所有面内方向都是各向同性的; 当施加预定电场以使压电膜失真时，位于膜片表面上并具有最大位移的点由PδMAX表示; 以PδMAX为中心并且具有与PδMAX的位移的最小差异的基准圆的圆周上的点由PδA表示，所述隔膜具有能够确定在直线接合PδMAX中设定的轴A1的形状 和PδA，所述隔膜包括其中与A1正交并垂直于所述膜表面上的轴线A2的平面为{110}面的单晶材料，并且所述压电膜为{100} - 单晶材料， 定向电影。

公开(公告)号：US07646140B2

公开(公告)日：2010-01-12

申请号：US12364429

申请日：2009-02-02

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

IPC分类号： H01L41/187

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  C01G23/003 ,  C01G29/006 ,  C01G45/006 ,  C01G45/1221 ,  C01G49/009 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2006/40 ,  C04B35/44 ,  C04B35/4682 ,  C04B35/475 ,  C04B35/49 ,  C04B35/495 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3236 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  H01L41/0805 ,  H01L41/1871 ,  H01L41/1878 ,  H02N2/106 ,  H02N2/163

摘要： There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3  (1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta and W, or a combination of the atoms of the plurality of elements.

摘要翻译： 公开了一种在基板上具有与压电体接触的压电体和一对电极的压电元件，其中，压电体由下式（1）表示的钙钛矿型氧化物构成：（Bi ，Ba）（M，Ti）O 3（1），其中M是选自Mn，Cr，Cu，Sc，In，Ga，Yb，Al，Mg，Zn，Co，Zr中的一种元素的原子 ，Sn，Nb，Ta和W，或多个元素的原子的组合。

公开(公告)号：US20090091215A1

公开(公告)日：2009-04-09

申请号：US12237933

申请日：2008-09-25

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC分类号： H01L41/00

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by PδMAX; and a point located on a circumference of a reference-circle having PδMAX as a center and having a minimum difference in displacement from PδMAX is expressed by PδA, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining PδMAX and PδA, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

摘要翻译： 压电致动器包括在两个电极层和隔膜之间的压电膜。 假设：所有材料的每个弹性系数是各向同性的，并且通过电场的压电膜的失真量在所有面内方向都是各向同性的; 位于膜片表面上并且当施加预定电场以使压电膜失真时具有最大位移的点由PdeltaMAX表示; 并且位于具有PdeltaMAX作为中心并且具有与PdeltaMAX的位移的最小差异的参考圆的圆周上的点由PdeltaA表示，所述隔膜具有能够确定在连接PdeltaMAX的直线中设置的轴A1的形状 和PdeltaA，隔膜包括其中与A1正交并垂直于膜片表面上的轴线A2的平面为{110}面的单晶材料，并且压电膜为{100} - 单晶材料， 定向电影。

公开(公告)号：US20080211881A1

公开(公告)日：2008-09-04

申请号：US12031176

申请日：2008-02-14

申请人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Kenichi Takeda ,  Hiroshi Funakubo ,  Hiroshi Nakaki ,  Rikyu Ikariyama ,  Osami Sakata

发明人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Kenichi Takeda ,  Hiroshi Funakubo ,  Hiroshi Nakaki ,  Rikyu Ikariyama ,  Osami Sakata

IPC分类号： H01L41/187 ,  B41J2/045

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

摘要翻译： 本发明提供一种压电性能大的压电膜，以及压电元件，液体排出头和利用该压电元件的液体排出装置。 压电膜由具有至少四方晶系结构的<100>取向的外延氧化物形成，其中氧化物是由通式ABO 3 N表示的钙钛矿型复合氧化物，并且至少包含 [100]取向的结构域C，D和E在晶体方向上具有相互偏离，其中域C和D中的结构域C和D中的结构域D和E中，域C和E以及结构域D和E中的[100]方向之间的角度偏差 分别为5°以下，5°以下，0.3°以下，0.3°以上，区域C和E以及区域D，E的[001]方向的角度偏差分别为1.0°以上， 和1.0°以上。

公开(公告)号：US20070215715A1

公开(公告)日：2007-09-20

申请号：US11683100

申请日：2007-03-07

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

IPC分类号： B05B1/08

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

摘要： The invention is to provide an optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode; wherein the piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

摘要翻译： 本发明提供一种作为光调制元件的透明性和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极; 其中所述压电物质膜不包含层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

公开(公告)号：US07262544B2

公开(公告)日：2007-08-28

申请号：US11024961

申请日：2004-12-30

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shoji Okamoto ,  Goji Asano

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shoji Okamoto ,  Goji Asano

IPC分类号： B41J2/01 ,  H01L41/047

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0477 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/319

摘要： To provide a dielectric layer of crystal structure preferentially or uniaxially oriented on a common substrate.A dielectric element of desired quality can be stably produced even on a common substrate for film-making by forming a lower electrode layer, dielectric layer and upper electrode layer in this order on a substrate, wherein each of these layers are designed to be preferentially or uniaxially oriented, and to have a specific half bandwidth, determined by fitting a pseudo-Voigt function.

摘要翻译： 提供在公共基板上优先或单向取向的晶体结构的介电层。 通过在基板上依次形成下电极层，电介质层和上电极层，即使在通常的薄膜制造用基板上也可以稳定地制造所需品质的电介质元件，其中，各层被设计为优选地 通过拟合伪Voigt函数确定具有特定的半带宽。

公开(公告)号：US20050168112A1

公开(公告)日：2005-08-04

申请号：US11024961

申请日：2004-12-30

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shoji Okamoto ,  Goji Asano

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shoji Okamoto ,  Goji Asano

IPC分类号： B41J2/01 ,  B41J2/045 ,  B41J2/14 ,  H01L41/047 ,  H01L41/09 ,  H01L41/316 ,  H01L41/319 ,  H01L41/187

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0477 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/319

摘要： To provide a dielectric layer of crystal structure preferentially or uniaxially oriented on a common substrate. A dielectric element of desired quality can be stably produced even on a common substrate for film-making by forming a lower electrode layer, dielectric layer and upper electrode layer in this order on a substrate, wherein each of these layers are designed to be preferentially or uniaxially oriented, and to have a specific half bandwidth, determined by fitting a pseudo-Voigt function.

摘要翻译： 提供在公共基板上优先或单向取向的晶体结构的介电层。 通过在基板上依次形成下电极层，电介质层和上电极层，即使在通常的薄膜制造用基板上也可以稳定地制造所需品质的电介质元件，其中，各层被设计为优选地 通过拟合伪Voigt函数确定具有特定的半带宽。

公开(公告)号：US06841490B2

公开(公告)日：2005-01-11

申请号：US10694053

申请日：2003-10-28

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： B81C1/00 ,  C23C14/08 ,  H01L21/20 ,  H01L21/203 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/12 ,  H01L29/788 ,  H01L29/792 ,  H01L21/283 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7624 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  Y10S438/90

摘要： A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

摘要翻译： 用于半导体器件的衬底包括晶体硅衬底; 其上的绝缘硅化合物层和绝缘硅化合物层上的结晶绝缘层，其中所述绝缘硅化合物层含有不超过构成所述结晶绝缘层的材料的组分元素的10at％，所述组分元素设置在 绝缘硅化合物层通过扩散。

公开(公告)号：US06830783B2

公开(公告)日：2004-12-14

申请号：US10397294

申请日：2003-03-27

申请人： Tetsuro Fukui ,  Akira Unno ,  Yutaka Kagawa

发明人： Tetsuro Fukui ,  Akira Unno ,  Yutaka Kagawa

IPC分类号： B05D104

CPC分类号： B32B15/16 ,  B32B7/02 ,  B32B15/12 ,  B32B2307/206 ,  Y10T428/256 ,  Y10T428/259 ,  Y10T428/273 ,  Y10T428/31935

摘要： An electromagnetic-wave absorber comprising a base material and an electromagnetic-wave absorption layer provided on the base material. The electromagnetic-wave absorption layer contains at least i) a polymeric material having a glass transition temperature (Tg) of from −15° C. to 110° C. and a number-average molecular weight (Mn) of from 3,000 to 1,000,000 and ii) an inorganic material. Also provided is a process for producing the absorber.

摘要翻译： 一种包括基材的电磁波吸收体和设置在基材上的电磁波吸收层。 电磁波吸收层至少包含i）玻璃化转变温度（Tg）为-15℃至110℃，数均分子量（Mn）为3,000至1,000,000的聚合材料，以及 ii）无机材料。 还提供了制造吸收体的方法。