公开(公告)号：US4570091A

公开(公告)日：1986-02-11

申请号：US592717

申请日：1984-03-23

申请人： Hiroshi Yasuda ,  Kiyofumi Ochii

发明人： Hiroshi Yasuda ,  Kiyofumi Ochii

IPC分类号： G11C11/417 ,  G11C7/10 ,  G11C11/409 ,  H03K19/017 ,  H03K19/0175 ,  H03K17/04 ,  H03K5/153 ,  H03K17/687 ,  H03K19/096

CPC分类号： G11C7/1057 ,  G11C7/1051 ,  G11C7/106 ,  H03K19/01707 ,  H03K19/01721

摘要： An output buffer circuit has a data input terminal which receives logic data, load and drive transistors, a driver for selectively turning on the transistors in accordance with the logic value of the logic data, a data output terminal which is connected to a power source terminal of the VDD level through a current path of the load transistor and is grounded through a current path of the drive transistor, and a capacitor connected as a load to the data output terminal. The output buffer circuit further has a transistion detector circuit for generating a pulse signal in response to a change in level of each of address signals, and a preset circuit for supplying, in response to the pulse signal, a charge or discharge current to the capacitor while a voltage at the data output terminal is not at the VDD/2 level.

摘要翻译： 输出缓冲电路具有接收逻辑数据的数据输入端子，负载和驱动晶体管，根据逻辑数据的逻辑值有选择地导通晶体管的驱动器，连接到电源端子的数据输出端子 的VDD电平通过负载晶体管的电流路径并通过驱动晶体管的电流路径接地，并且将电容器作为负载连接到数据输出端子。 输出缓冲器电路还具有用于响应于每个地址信号的电平变化而产生脉冲信号的转移检测器电路，以及用于响应脉冲信号向电容器提供充电或放电电流的预设电路 而数据输出端子的电压不为VDD / 2电平。

公开(公告)号：US4545942A

公开(公告)日：1985-10-08

申请号：US597817

申请日：1984-04-09

申请人： Mitsuo Nagano ,  Koichi Hirai ,  Kouichi Kitamura ,  Kenkichi Shinkai ,  Hiroshi Yasuda

发明人： Mitsuo Nagano ,  Koichi Hirai ,  Kouichi Kitamura ,  Kenkichi Shinkai ,  Hiroshi Yasuda

IPC分类号： A61K31/275 ,  A61K20060101 ,  A61K31/165 ,  A61K31/19 ,  A61K31/195 ,  A61K31/215 ,  A61P35/00 ,  A61P37/04 ,  C07C20060101 ,  C07C67/00 ,  C07C253/00 ,  C07C255/24 ,  C07C255/26 ,  C07C255/29 ,  C07C255/32 ,  C07C255/44 ,  C07C255/56 ,  C07C255/66 ,  C07D317/68 ,  C07C121/78

CPC分类号： C07C255/00

摘要： New compounds useful as immunoregulatory and antineoplastic agents are amino-acid derivatives of formula: ##STR1## wherein: n is an integer from 1 to 5;R.sup.1 is a hydrogen atom, an alkyl group, a haloalkyl group, a halogen atom, a mercapto group, an alkylmercapto group, a hydroxy group, an alkoxy group, an acyloxy group, a carboxyl group, an alkoxycarbonyl group, an amino group, an alkyl-substituted amino group, an aryl-substituted amino group, an acylamino group, a haloalkoxycarbonylamino group, an alkanesulphonyl group, a nitro group or a cyano group (and, when n is an integer from 2 to 5, the radicals R.sup.1 may be the same or different);R.sup.2 and R.sup.3 may be the same or different and each is a hydrogen atom or an alkyl group;R.sup.4 is a hydrogen atom, an alkyl group, a cyano group, a cyanoalkyl group, a hydroxyalkyl group, an alkoxycarbonyl group, a carboxyl group, an aryl group, an aralkyl group, a mercaptoalkyl group, an alkylthioalkyl group, or a thioalkyl group (the free bond of the sulphur in said thioalkyl group being joined to the sulphur of another moiety of the same formula); andA is a hydroxy group, an alkoxy group, an amino group, an alkyl-substituted amino group (optionally halogen- or carbamoyl- substituted in the alkyl moiety), a hydrazino group, an alkyl- or aryl- substituted hydrazino group, a hydroxylamino group, an alkoxyamino group or an aralkyloxyamino group;and the pharmaceutically acceptable salts thereof.

摘要翻译： 可用作免疫调节和抗肿瘤剂的新化合物是下式的氨基酸衍生物：其中：n是1至5的整数; R1是氢原子，烷基，卤代烷基，卤素原子，巯基，烷基巯基，羟基，烷氧基，酰氧基，羧基，烷氧基羰基，氨基， 烷基取代的氨基，芳基取代的氨基，酰氨基，卤代烷氧基羰基氨基，链烷磺酰基，硝基或氰基（当n为2至5的整数时，基团R 1可以 相同或不同）; R2和R3可以相同或不同，各自为氢原子或烷基; R4是氢原子，烷基，氰基，氰基烷基，羟基烷基，烷氧基羰基，羧基，芳基，芳烷基，巯基烷基，烷硫基烷基或硫代烷基 （所述硫代烷基中的硫的游离键与相同式的另一部分的硫连接）; 并且A是羟基，烷氧基，氨基，烷基取代的氨基（在烷基部分中任选被卤素取代或氨基甲酰基取代），肼基，烷基或芳基取代的肼基， 羟基氨基，烷氧基氨基或芳烷氧基氨基; 及其药学上可接受的盐。

公开(公告)号：US4490697A

公开(公告)日：1984-12-25

申请号：US386091

申请日：1982-06-07

申请人： Hiroshi Yasuda ,  Kiyofumi Ochii

发明人： Hiroshi Yasuda ,  Kiyofumi Ochii

IPC分类号： G11C11/41 ,  G11C5/06 ,  G11C11/407 ,  H01L23/522 ,  H03H7/30 ,  H01P9/00

CPC分类号： G11C5/063 ,  H01L23/5222 ,  H01L2924/0002

摘要： There is provided a signal propagating device for receiving an input signal at an input end thereof and supplying the input signal to a plurality of memory cells arranged in one row. The signal propagating device includes a word line connected to transmit the input signal and having a plurality of line segments electrically coupled to the memory cells. A preceding one of the line segments is formed to have a larger average width than a succeeding one of the line segments.

摘要翻译： 提供了一种信号传播装置，用于在其输入端接收输入信号，并将输入信号提供给排列成一排的多个存储单元。 信号传播装置包括连接成传输输入信号并具有电耦合到存储器单元的多个线段的字线。 线段中的前一个被形成为具有比后面的一个线段更大的平均宽度。

公开(公告)号：US4487795A

公开(公告)日：1984-12-11

申请号：US363857

申请日：1982-03-31

申请人： Hiroshi Yasuda ,  Yasutaka Ban

发明人： Hiroshi Yasuda ,  Yasutaka Ban

IPC分类号： H01L21/3213 ,  H01L21/027 ,  H01L21/30 ,  H01L21/768 ,  H01L23/528 ,  B32B3/24 ,  G03C5/00

CPC分类号： H01L21/30 ,  H01L21/0277 ,  H01L21/76885 ,  H01L23/5283 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/24331 ,  Y10T428/24802 ,  Y10T428/24917

摘要： A conductor pattern consisting of conductor lines is formed in an electronic device by an electron-beam lithography process using a positive resist. After the formation of a positive resist layer on a conductive layer, a linear pattern of latent images is formed by exposure of an electron-beam along the contours of the conductor lines to be formed. The positive resist layer is developed and then serves as a mask against an etchant. The conductive layer is selectively etched to divide it into the patterned conductor lines and remaining conductor portions.

摘要翻译： 通过使用正性抗蚀剂的电子束光刻工艺在电子器件中形成由导体线组成的导体图案。 在导电层上形成正的抗蚀剂层之后，通过沿着要形成的导体线的轮廓电子束的曝光来形成潜像的线性图案。 显影正性抗蚀剂层，然后作为抵抗蚀刻剂的掩模。 选择性地蚀刻导电层以将其分成图案化的导体线和剩余的导体部分。

公开(公告)号：US4362942A

公开(公告)日：1982-12-07

申请号：US213681

申请日：1980-12-05

申请人： Hiroshi Yasuda

发明人： Hiroshi Yasuda

IPC分类号： H01L21/027 ,  H01J37/147 ,  H01J37/153 ,  H01J37/302 ,  H01J37/304 ,  H01J37/00 ,  H01J3/26

CPC分类号： H01J37/302 ,  H01J37/1475 ,  H01J37/153 ,  H01J37/304

摘要： An electron beam exposure system for projecting an electron beam onto a medium placed on a continuously moving stage, comprises a correction memory storing correction data for at least one of a field curvature, an astigmatism, and a distortion which changes in accordance with a deflection amount of the electron beam. An amount of actual deflection of the electron beam is obtained from the difference between a position data of the medium and the beam deflection position data with the electron beam then being controlled by the corresponding correction data read from the correction memory according to the amount of beam deflection.

摘要翻译： 一种用于将电子束投影到放置在连续移动台上的介质上的电子束曝光系统，包括校正存储器，其存储校正数据，用于根据偏转量而变化的场曲率，像散和失真中的至少一个 的电子束。 根据介质的位置数据和光束偏转位置数据之间的差异，电子束的实际偏转量由电子束然后由根据光束的量从校正存储器读取的对应的校正数据来控制 偏转。

公开(公告)号：US4076783A

公开(公告)日：1978-02-28

申请号：US532466

申请日：1974-12-13

申请人： Hiroshi Yasuda ,  Susumu Omori

发明人： Hiroshi Yasuda ,  Susumu Omori

IPC分类号： D01F6/84 ,  C08G63/688 ,  D01F6/62 ,  D06P5/22 ,  D01F1/04

CPC分类号： C08G63/6886 ,  D01F6/84 ,  Y10S8/922

摘要： A method for producing polyester fibers having excellent dyeability with basic dyes or disperse dyes, which comprises melt-spinning a polyester comprising predominantly (at least 80% by mol) repeating units of ethylene terephthalate and containing 0.5% by mol or more, preferably 1.5 to 5% by mol of an ester unit derived from a dicarboxylic acid or diol containing at least one metal sulfonate group under the condition of being highly oriented so as to give filaments having a birefringence (.DELTA.n) of 0.015 to 0.100 and drawing the resulting filaments at a fixed temperature and in a fixed draw ratio, and the polyester fibers which can be dyed with basic dyes or disperse dyes at a temperature of less than 100.degree. C at a sufficiently high dye adsorption rate to give dyed fibers.

摘要翻译： 一种生产与碱性染料或分散染料具有优异染色性的聚酯纤维的方法，其包括熔融纺丝主要包含（至少80摩尔％）对苯二甲酸乙二醇酯的重复单元和含有0.5摩尔％以上，优选1.5至1.5重量％ 在高度取向的条件下，衍生自含有至少一种金属磺酸盐基团的二羧酸或二醇的酯单元为5摩尔％，得到双折射（DELTA n）为0.015〜0.100的长丝，并将所得长丝 在固定的温度和固定的拉伸比下，可以用足够高的染料吸附速率在低于100℃的温度下用碱性染料或分散染料染色的聚酯纤维，得到染色的纤维。

公开(公告)号：US08012842B2

公开(公告)日：2011-09-06

申请号：US12137817

申请日：2008-06-12

申请人： Scott Balster ,  Badih El-Kareh ,  Hiroshi Yasuda

发明人： Scott Balster ,  Badih El-Kareh ,  Hiroshi Yasuda

IPC分类号： H01L21/331

CPC分类号： H01L27/0623 ,  H01L21/82285 ,  H01L21/8249 ,  H01L21/84 ,  H01L27/0826 ,  H01L27/1203

摘要： An integrated semiconductor structure that has first and second bipolar transistor structures. The first bipolar transistor structure has a doped tank region in contact with a doped tank region located underneath a contacting sinker. The second bipolar transistor structure has a doped buried region that is the same dopant type as its doped tank region. A method for fabricating an integrated semiconductor structure in a bulk semiconductor wafer. A first patterned photomask is used to form a doped buried region and a doped tank region within the first bipolar transistor structure. A second patterned photomask is used to form a doped buried region and a doped tank region within the second bipolar transistor, plus a doped buried region and a doped tank region underneath a contacting sinker adjacent to the first bipolar transistor.

摘要翻译： 具有第一和第二双极晶体管结构的集成半导体结构。 第一双极晶体管结构具有与位于接触沉降片下方的掺杂槽区接触的掺杂槽区。 第二双极晶体管结构具有与其掺杂槽区相同的掺杂剂类型的掺杂掩埋区。 一种用于在体半导体晶片中制造集成半导体结构的方法。 第一图案化光掩模用于在第一双极晶体管结构内形成掺杂掩埋区和掺杂槽区。 第二图案化光掩模用于在第二双极晶体管内形成掺杂掩埋区和掺杂槽区，加上与第一双极晶体管相邻的接触沉积片下方的掺杂掩埋区和掺杂槽区。

公开(公告)号：US20110172421A1

公开(公告)日：2011-07-14

申请号：US13121048

申请日：2009-10-01

申请人： Isao Yamagami ,  Yoshihiko Maeda ,  Hiroshi Yasuda ,  Katsumi Murofushi

发明人： Isao Yamagami ,  Yoshihiko Maeda ,  Hiroshi Yasuda ,  Katsumi Murofushi

IPC分类号： C07D265/30 ,  C07C269/00 ,  C07D211/06 ,  C07C271/06

CPC分类号： C07D295/205 ,  C07C269/00 ,  C07C269/02 ,  C07C271/24 ,  C07D211/06 ,  C07D211/16 ,  C07D317/52 ,  C07D317/62

摘要： An object of the present invention is to provide a novel photobase generator which can sensitively generate a base even by h-ray in place of a conventional 2-nitro-4,5-dimethoxybenzyloxycarbonylamine compound. Disclosed is an N-(α-aromatic group-substituted-2-nitro-4,5-dialkoxybenzyloxycarbonyl)amine compound represented by the following general formula (I). (In the above formula (I), R1 to R9 denote specific groups.)

摘要翻译： 本发明的目的是提供一种新的光碱产生剂，其可以通过h射线代替常规的2-硝基-4,​​5-二甲氧基苄氧羰基胺化合物敏感地产生碱。 公开了由以下通式（I）表示的N-（α-芳族基团取代-2-硝基-4,​​5-二烷氧基苄氧基羰基）胺化合物。 （上式（I）中，R 1〜R 9表示具体的基团。）

公开(公告)号：US07947876B2

公开(公告)日：2011-05-24

申请号：US11662650

申请日：2004-09-14

申请人： Koichi Sugita ,  Saori Kasahara ,  Hiroyasu Ebinuma ,  Humio Takaiwa ,  Hiroshi Yasuda ,  Takahito Jomori ,  Yuji Hayashi ,  Akira Tashita

发明人： Koichi Sugita ,  Saori Kasahara ,  Hiroyasu Ebinuma ,  Humio Takaiwa ,  Hiroshi Yasuda ,  Takahito Jomori ,  Yuji Hayashi ,  Akira Tashita

IPC分类号： A01H5/00 ,  C12N15/82

CPC分类号： A61K38/26 ,  A23L33/105 ,  C12N15/8257

摘要： The present invention is regarding plants and plant storage organs thereof in which GLP-1 derivatives are accumulated, and methods of producing them. The transgenic plants and plant storage organs thereof accumulate tandem repeated GLP-1 derivatives cleavable with intestinal digestive enzyme to monomeric molecules and are produced by methods comprising: integrating into vectors linked DNAs which comprise tandem repeated DNAs encoding the GLP-1 derivative with trypsin resistance in which the amino acid in the 26th position is Gln, the amino acid in the 34th position is Asn or Asp, and C-terminal consists of Arg or Lys to produce monomeric molecules; introducing the vectors into plant cells; and redifferentiating the obtained transformants. The edible transgenic plants and plant storage organs are useful for treating diabetes and can be ingested by diabetic patients.

摘要翻译： 本发明涉及其中积累GLP-1衍生物的植物和植物贮藏器官及其生产方法。 其转基因植物和植物储存器官将可与肠消化酶切割的串联重复的GLP-1衍生物积聚到单体分子中，并通过以下方法产生：包括：将包含编码GLP-1衍生物的串联重复DNA与胰蛋白酶抗性的连锁DNA连接 其中第26位的氨基酸是Gln，第34位的氨基酸是Asn或Asp，C末端由Arg或Lys组成以产生单体分子; 将载体导入植物细胞; 并重新分化获得的转化体。 可食用的转基因植物和植物贮藏器官可用于治疗糖尿病并可被糖尿病患者摄入。

公开(公告)号：US07919750B2

公开(公告)日：2011-04-05

申请号：US12151500

申请日：2008-05-07

申请人： Hiroshi Yasuda ,  Takeshi Haraguchi ,  Yoshihisa Ooae ,  Takamasa Satoh ,  Yoshinori Terui ,  Seiichi Sakawa ,  Ryozo Nonogaki

发明人： Hiroshi Yasuda ,  Takeshi Haraguchi ,  Yoshihisa Ooae ,  Takamasa Satoh ,  Yoshinori Terui ,  Seiichi Sakawa ,  Ryozo Nonogaki

IPC分类号： H01J29/48 ,  H01J37/073

CPC分类号： H01J37/073 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/3175

摘要： An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.

摘要翻译： 电子枪包括被配置为发射电子的电子源。 电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。 电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上，并被与电子源不同的材料覆盖。 电子枪通过向尖端施加电场而发射热场发射的电子，同时保持足够低的温度以避免电子源的材料的升华。 电子源的材料可以是六硼化镧（LaB 6）或六硼化铈（CeB 6）。 电子发射限制区域可以被碳覆盖。