公开(公告)号：USRE34158E

公开(公告)日：1993-01-12

申请号：US744514

申请日：1991-08-13

申请人： Atsuo Watanabe ,  Takahiro Nagano ,  Takahide Ikeda ,  Naohiro Momma ,  Ryuichi Saito

发明人： Atsuo Watanabe ,  Takahiro Nagano ,  Takahide Ikeda ,  Naohiro Momma ,  Ryuichi Saito

IPC分类号： H01L21/762 ,  H01L21/763 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/092

CPC分类号： H01L27/0928 ,  H01L21/76224 ,  H01L21/763 ,  H01L21/823892 ,  H01L27/0623

摘要： A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried region which is located at the bottom of the well region and separates an active region in the wall from the substrate region. The isolation region is deeper than the buried region. The well-to-well isolation is enhanced by the combination of the buried region and the deep dielectric isolation region. Packing density and the high speed operation can also be improved.

公开(公告)号：US4862240A

公开(公告)日：1989-08-29

申请号：US85260

申请日：1987-08-12

申请人： Atsuo Watanabe ,  Takahiro Nagano ,  Takahide Ikeda ,  Naohiro Momma ,  Ryuichi Saito

发明人： Atsuo Watanabe ,  Takahiro Nagano ,  Takahide Ikeda ,  Naohiro Momma ,  Ryuichi Saito

IPC分类号： H01L29/78 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/092

CPC分类号： H01L21/76224 ,  H01L21/74 ,  H01L21/76205 ,  H01L21/763 ,  H01L21/823892 ,  H01L27/092 ,  H01L27/0623

摘要： A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried region which is located at the bottom of the well region and separates an active region in the well from the substrate region. The isolation region is deeper than the buried region. The well-to-well isolation is enhanced by the combination of the buried region and the deep dielectric isolation region. Packing density and the high speed operation can also be improved.

摘要翻译： 一种单片互补半导体器件，包括由从表面延伸到衬底区域的电介质隔离区隔开的n型和p型阱区。 阱区域包括高度掺杂的掩埋区域，其位于阱区域的底部并且将阱中的有源区域与衬底区域分离。 隔离区域比掩埋区域深。 通过掩埋区域和深介电隔离区域的组合增强了井对阱隔离。 包装密度和高速运转也可以提高。

公开(公告)号：US20210392550A1

公开(公告)日：2021-12-16

申请号：US17326817

申请日：2021-05-21

申请人： Ryuichi Saito

发明人： Ryuichi Saito

IPC分类号： H04W28/26 ,  H04B7/155 ,  H04L29/08 ,  H04L29/06

摘要： A resource management system includes a resource management device that manages a usage of a resource, a reservation management device that manages a reservation for the resource, and a communication relay device that communicates with the resource management device. The resource management device receives reservation information transmitted from the reservation management device. The reservation information is information on the reservation for the resource. The resource management device transmits, to the communication relay device, a request for identification information identifying the communication relay device. The resource management device receives the identification information, which is transmitted from the communication relay device in response to the request. The identification information is used to execute an event associated with the reservation information. The resource management device transmits, to an operation display terminal that displays a usage status of the resource, the identification information and a password that is associated with the identification information.

公开(公告)号：US08097745B2

公开(公告)日：2012-01-17

申请号：US12749735

申请日：2010-03-30

申请人： Yohei Nobe ,  Kang-go Chung ,  Ryuichi Saito

发明人： Yohei Nobe ,  Kang-go Chung ,  Ryuichi Saito

IPC分类号： C07F7/18

CPC分类号： C07F7/188 ,  C07F7/1876

摘要： A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.

摘要翻译： 公开了制备式R 2n（OR 4）m Si-R 1 -Si（OR 4）m R 2n的有机硅化合物的简单方法。 该方法包括以下两个步骤：Y-R1-Y + SiXm + 1R2n-> R2nXmSi-R1-SiXmR2n R2nXmSi-R1-SiXmR2n + M（OR4）r - →R2n（OR4）mSi-R1-Si（OR4） mR2n在式中，R1是亚甲基，亚烷基或亚芳基，R2是烷基，烯基，炔基或芳基，m和n是0-3，如果m + n = 3，至少一个m是1或更大，Y 是卤素，X是氢或卤素，R4是烷基，烯基，炔基或芳基，M是金属，r是金属的价）。 有机硅化合物用于形成具有优异的耐热性，耐化学性，导电性和弹性模量的膜。

公开(公告)号：US20110042789A1

公开(公告)日：2011-02-24

申请号：US12934806

申请日：2009-03-24

申请人： Hisashi Nakagawa ,  Yohei Nobe ,  Kang-go Chung ,  Ryuichi Saito ,  Terukazu Kokubo

发明人： Hisashi Nakagawa ,  Yohei Nobe ,  Kang-go Chung ,  Ryuichi Saito ,  Terukazu Kokubo

IPC分类号： H01L21/31 ,  H01L23/28 ,  C07F7/08

CPC分类号： C23C16/401 ,  C07F7/1804 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/31695 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1). wherein R1 and R2 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R3 and R4 individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.

摘要翻译： 化学气相沉积材料包括由以下通式（1）表示的有机硅烷化合物。 其中R1和R2各自表示氢原子，具有1至4个碳原子的烷基，乙烯基或苯基，R 3和R 4各自表示具有1至4个碳原子的烷基，乙酰基或 苯基，m为0〜2的整数，n为1〜3的整数。

公开(公告)号：US20090033441A1

公开(公告)日：2009-02-05

申请号：US11814946

申请日：2006-03-22

申请人： Ryuichi Saito ,  Hiroshi Kagata ,  Hidenori Katsumura ,  Muneyuki Sawada

发明人： Ryuichi Saito ,  Hiroshi Kagata ,  Hidenori Katsumura ,  Muneyuki Sawada

IPC分类号： H01P7/10 ,  C04B35/468

CPC分类号： H01G4/30 ,  C04B35/462 ,  C04B35/468 ,  C04B35/6262 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3287 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/78 ,  C04B2235/96 ,  C04B2235/9623 ,  C04B2235/9669 ,  H01B3/12 ,  H01G4/1227

摘要： A dielectric porcelain composition of the present invention includes a first component and second component. If the first component is represented by the general formula of xBaO—yNd2O3-zTiO2-wBi2O3 (provided that x+y+z+w=100), x, y, z, and w satisfy 12≦x≦16, 12≦y≦16, 65≦z≦69, and 2≦w≦5, respectively. The second component includes 30 to 37 wt % of BaO, 33 to 46 wt % of SiO2, 8 to 12 wt % of La2O3, 3 to 7 wt % of Al2O3, 0 to 1 wt % of SrO, 0 to 10 wt % of Li2O, 0 to 20 wt % of ZnO, and 7 wt % or less of B203. The compounding ratio of the second component is between 10 wt % and 30 wt % when the sum of the first and second components is 100. In addition, 0.1 to 1 parts by weight of Li2O and 3 to 10 parts by weight of ZnO, relative to 100 parts by weight of the sum of the first and second components, is also contained as a third component. An average particle diameter of the dielectric mixed powder forming dielectric porcelain composition before firing is 0.9 μm or less.

摘要翻译： 本发明的电介质瓷组合物包括第一组分和第二组分。 如果第一组分由通式xBaO-yNd2O3-zTiO2-wBi2O3（条件是x + y + z + w =​​ 100）表示，x，y，z和w满足12 <= x <= 16,12 <= y <= 16,65 <= z <= 69，2 <= w <= 5。 第二组分包括30至37重量％的BaO，33至46重量％的SiO 2，8至12重量％的La 2 O 3，3至7重量％的Al 2 O 3，0至1重量％的SrO，0至10重量％的 Li 2 O，0〜20重量％的ZnO和7重量％以下的B 2 O 3。 当第一和第二组分的总和为100时，第二组分的配合比例为10重量％至30重量％。此外，相对于0.1重量份的Li 2 O 3和10重量份的Li 2 O 3和10重量份 至100重量份的第一和第二组分的总和也被包含为第三组分。 烧成前的介电混合粉末形成介电瓷组合物的平均粒径为0.9μm以下。

公开(公告)号：US07231712B2

公开(公告)日：2007-06-19

申请号：US10952476

申请日：2004-09-29

申请人： Ryuichi Saito ,  Hiroshi Kagata ,  Masaaki Katsumata

发明人： Ryuichi Saito ,  Hiroshi Kagata ,  Masaaki Katsumata

IPC分类号： H01R43/00

CPC分类号： H01L25/16 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49822 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H03H9/0542 ,  H03H9/0557 ,  H03H9/1085 ,  H05K1/0306 ,  H05K3/284 ,  H05K3/305 ,  H05K2201/09036 ,  H05K2201/10636 ,  H05K2201/10674 ,  Y02P70/611 ,  Y02P70/613 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49163 ,  Y10T29/49165 ,  Y10T29/49171 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A module includes a ceramic substrate, first and second electrodes provided on the ceramic substrate, a component having third and fourth electrodes connected to the first and second electrodes, respectively, and a resin filled in a space between the component and the ceramic substrate. The ceramic substrate has a surface thereof having a recess formed therein. The first and second electrodes are provided on the surface of the ceramic substrate so that the recess is located between the first and second electrodes. The component is located over the recess and spaced from the ceramic substrate with a space including the recess. The space including the recess is filled with the resin. The module allows each component to be surface mounted at higher bonding strength, thus preventing short-circuit between the electrodes on the substrate and improving the operation reliability.

摘要翻译： 模块包括陶瓷基板，设置在陶瓷基板上的第一和第二电极，分别具有连接到第一和第二电极的第三和第四电极以及填充在部件和陶瓷基板之间的空间中的树脂。 陶瓷基板的表面具有形成在其中的凹部。 第一和第二电极设置在陶瓷基板的表面上，使得凹槽位于第一和第二电极之间。 所述部件位于所述凹部之上并与所述陶瓷基板间隔开并具有包括所述凹部的空间。 包含凹部的空间用树脂填充。 该模块允许每个部件以更高的接合强度进行表面安装，从而防止基板上的电极之间的短路并提高操作可靠性。

公开(公告)号：US07200954B2

公开(公告)日：2007-04-10

申请号：US11209192

申请日：2005-08-20

申请人： Masao Watanabe ,  Ximeng Jiang ,  Ryuichi Saito

发明人： Masao Watanabe ,  Ximeng Jiang ,  Ryuichi Saito

IPC分类号： F26B5/06

CPC分类号： F26B5/06

摘要： The object is to provide a method for drying and storing activated aluminum fine particles which can be a hydrogen source for fuel cells for a long term without being deactivated. A thermal shock treatment as an activation of the aluminum fine particles, which repeats rapid heating and cooling, is performed to aluminum fine particles obtained by milling aluminum alloy; moisture contained in the activated aluminum fine particles is filtrated; said aluminum fine particles are pre-frozen; and the aluminum fine particles are freeze-dried and then stored in nitrogen atmosphere or vacuum-packed.

摘要翻译： 本发明的目的是提供一种用于干燥和储存活性铝细颗粒的方法，所述活性铝微粒可长期燃料电池的氢源而不被去活化。 对通过研磨铝合金获得的铝微粒进行热冲击处理，作为重复快速加热和冷却的铝微粒的活化， 活性铝微粒中含有的水分被过滤; 所述铝微粒预冷冻; 将铝细颗粒冷冻干燥，然后在氮气气氛中储存或真空包装。

公开(公告)号：US07046155B2

公开(公告)日：2006-05-16

申请号：US10856833

申请日：2004-06-01

申请人： Yutaka Sato ,  Masahiro Nagasu ,  Katsumi Ishikawa ,  Ryuichi Saito ,  Satoru Inarida

发明人： Yutaka Sato ,  Masahiro Nagasu ,  Katsumi Ishikawa ,  Ryuichi Saito ,  Satoru Inarida

IPC分类号： G08B17/02 ,  G08B17/06 ,  H02H3/24 ,  H02H5/04

CPC分类号： H02M7/00 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00

摘要： A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.

公开(公告)号：US20060034756A1

公开(公告)日：2006-02-16

申请号：US11197782

申请日：2005-08-04

申请人： Masao Watanabe ,  Ximeng Jiang ,  Ryuichi Saito

发明人： Masao Watanabe ,  Ximeng Jiang ,  Ryuichi Saito

IPC分类号： C01B3/08

CPC分类号： C01B3/08 ,  Y02E60/36

摘要： By activating aluminum fine particles obtained by milling aluminum alloy in water, reactivity of the aluminum fine Particles at low temperature is improved. The activation comprises a thermal shock treatment wherein the aluminum fine particles are repeatedly heated and cooled down rapidly, and subsequently these activated aluminum fine particles are stored in a refrigerator. By reaction between the activated aluminum fine particles and water molecules, a large amount of hydrogen gas can be generated at room temperature, therefore hydrogen gas or fuel for a portable-type fuel cells can be produced in large quantities at room temperature in a short period of time.

摘要翻译： 通过活化通过在水中研磨铝合金获得的铝微粒，铝微粒在低温下的反应性得到改善。 激活包括热冲击处理，其中铝微粒被快速地反复加热和冷却，随后将这些活化的铝细颗粒储存在冰箱中。 通过活化的铝微粒与水分子之间的反应，室温下可产生大量的氢气，因此可以在短时间内在室温下大量生产用于便携式燃料电池的氢气或燃料 的时间。