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145 条记录 (耗时 0.04 秒)

    Image pickup apparatus performing autofocus processing and image enlargement in a common selected image plane region
    91.
    发明授权
    Image pickup apparatus performing autofocus processing and image enlargement in a common selected image plane region 失效
    图像拾取装置在公共选择的图像平面区域中执行自动聚焦处理和图像放大

    公开(公告)号：US06522360B1

    公开(公告)日：2003-02-18

    申请号：US08806314

    申请日：1997-02-26

    申请人： Mamoru Miyawaki ,  Mahito Shinohara ,  Isamu Ueno

    发明人： Mamoru Miyawaki ,  Mahito Shinohara ,  Isamu Ueno

    IPC分类号： G03B1300

    CPC分类号： H04N5/23293 ,  G03B2213/025 ,  H04N5/23212

    摘要： An image pickup apparatus is provided with a visual line detecting device for detecting the position of a fixation point of the eye of the operator obtained within the image plane of an electronic viewfinder which displays an image of an object of shooting, and an image processing circuit for processing and enlarging the image with the detected position of the fixation point as the center of the enlarging action.

    摘要翻译： 图像拾取装置设置有用于检测在显示拍摄对象的图像的电子取景器的图像平面内获得的操作者的眼睛的固定点的位置的视线检测装置，以及图像处理电路 用于以检测到的定位点的位置作为放大动作的中心来处理和放大图像。

    Charge transfer device and a semiconductor circuit including the device
    92.
    发明授权
    Charge transfer device and a semiconductor circuit including the device 失效
    电荷转移装置和包括该装置的半导体电路

    公开(公告)号：US06510193B1

    公开(公告)日：2003-01-21

    申请号：US08739786

    申请日：1996-10-30

    申请人： Tetsunobu Kochi ,  Mamoru Miyawaki

    发明人： Tetsunobu Kochi ,  Mamoru Miyawaki

    IPC分类号： G11C1928

    CPC分类号： H01L29/76816 ,  G11C19/282

    摘要： By providing a semiconductor device including a charge transfer channel to one end of which electric charges supplied from a charge supply unit are input, and which includes a plurality of branching regions at an intermediate portion, a plurality of gate electrodes provided on the corresponding branching regions of the charge transfer channel via insulating films, an input-signal supply unit for supplying each of the gate electrodes with an input signal, a transfer electrode, provided on the charge transfer channel via a gate insulating film, for performing control so that the electric charges are transferred in a predetermined direction within the charge transfer channel, a conversion unit for coverting the transferred electric charges into a voltage, and a sense amplifier to which an output signal from the conversion unit is input, and by providing a semiconductor circuit which includes such a device, it is possible to reduce the scale of circuitry, increase the calculation speed, and reduce electric power consumption.

    摘要翻译： 通过提供包括电荷转移通道的半导体器件，其一端输入从电荷供给单元提供的电荷，并且在中间部分包括多个分支区域，设置在相应分支区域上的多个栅极电极 的电荷转移通道，用于向每个栅电极提供输入信号的输入信号提供单元，经由栅极绝缘膜设置在电荷转移通道上的转移电极，用于执行电 电荷在电荷转移通道内被传送到预定方向，用于将转移的电荷覆盖成电压的转换单元，以及输入来自转换单元的输出信号的读出放大器，以及提供包括 这样的设备，可以减小电路规模，增加计算速度，一 d降低电力消耗。

    Semiconductor device with insulated gate transistor
    93.
    发明授权
    Semiconductor device with insulated gate transistor 失效
    具有绝缘栅晶体管的半导体器件

    公开(公告)号：US06242783B1

    公开(公告)日：2001-06-05

    申请号：US08126757

    申请日：1993-09-27

    申请人： Tadahiro Ohmi ,  Mamoru Miyawaki

    发明人： Tadahiro Ohmi ,  Mamoru Miyawaki

    IPC分类号： H01L2976

    CPC分类号： H01L29/78 ,  H01L29/1079 ,  H01L29/1087 ,  H01L29/4236 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7851

    摘要： An insulated gate transistor comprises source regions; drain regions; channel regions provided between the source and drain regions; a gate electrode; and gate insulative film provided between the channel regions and the gate electrode. The device has a semiconductor region which is provided so as to be in contact with the channel regions and has the same conductivity type as that of the channel region and has an impurity concentration higher than that of the channel region. The gate electrode has at least two opposite portions which face each other.

    摘要翻译： 绝缘栅晶体管包括源区; 漏区; 设置在源区和漏区之间的沟道区; 栅电极; 以及设置在沟道区和栅电极之间的栅极绝缘膜。 该器件具有设置成与沟道区相接触并具有与沟道区相同的导电类型并且杂质浓度高于沟道区的杂质浓度的半导体区。 栅电极具有彼此面对的至少两个相对部分。

    Method of making a semiconductor device
    96.
    发明授权
    Method of making a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US6001727A

    公开(公告)日：1999-12-14

    申请号：US827464

    申请日：1997-03-28

    申请人： Tadahiro Ohmi ,  Mamoru Miyawaki

    发明人： Tadahiro Ohmi ,  Mamoru Miyawaki

    IPC分类号： H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L21/4763

    CPC分类号： H01L21/76882 ,  H01L21/32115 ,  H01L2924/0002

    摘要： In a semiconductor device in which a wiring layer is formed on the surface of a layer having a stepped portion, the wiring layer formed contains hydrogen at least at its surface portion. In a process for fabricating the semiconductor device, hydrogen is incorporated in the wiring layer in the course of, or after, the formation of the wiring layer. In particular, the wiring is heated at a temperature of from 150.degree. C. to 450.degree. C. in an atmosphere containing hydrogen gas, radical hydrogen or plasma hydrogen, without the step of exposure to the atmosphere, in the course of, or after, the formation of the wiring layer. The wiring layer is formed in an Ar and/or Xe plasma containing from 0.1% to 10% of at least one of hydrogen, radical hydrogen and plasma hydrogen.

    摘要翻译： 在其中在具有阶梯部分的层的表面上形成布线层的半导体器件中，形成的布线层至少在其表面部分含有氢。 在制造半导体器件的过程中，在形成布线层的过程中或之后，在布线层中并入氢。 特别地，在包含氢气，自由基氢或等离子体氢的气氛中，将配线在150℃〜450℃的温度下加热，而不是暴露于大气中的步骤，在或之后 ，形成布线层。 布线层形成在含有0.1％至10％的氢，自由基氢和等离子体氢中的至少一种的Ar和/或Xe等离子体中。