摘要:
A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.
摘要:
A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.
摘要:
A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.
摘要:
A chip package including a chip extension for containing thermal interface material (TIM) and improves chip cooling, and a related method, are disclosed. In particular, the chip package includes a chip, a cooling structure coupled to the chip via a TIM, and a chip extension may be thermally coupled to an outer edge of the chip. A TIM placed between the chip and the cooling structure is contained during thermal cycling by the chip extension such that void formation at the edge of the chip, which can move between the chip and cooling structure, is suppressed. The chip extension also improves lateral heat dissipation by providing a greater thermal contact area between the cooling structure and the chip and, if needed, the substrate at a much lower cost than using larger die with lower production unit output from a wafer.
摘要:
An optoelectronic assembly for an electronic system includes a support electronic chip set configured for at least one of providing multiplexing, demultiplexing, coding, decoding and optoelectronic transducer driving and receive functions. A first substrate having a first surface and an opposite second surface is in communication with the support electronic chip set via the first surface while a second substrate is in communication with the second surface of the first substrate. The second substrate is configured for mounting at least one of data processing, data switching and data storage chips. An optoelectronic transducer is in signal communication with the support electronic chip set and an optical fiber array is aligned at a first end with the optoelectronic transducer and with an optical signaling medium at a second end. An electrical signal from the support electronic chip set is communicated to the optoelectronic transducer via an electrical signaling medium, and the support electronic chip set and the optoelectronic transducer share a common thermal path for cooling.
摘要:
A light guide system has a light guide having a first end portion opposite a second end portion. The light guide provides a first surface and a second surface between the first and second end portions, and the second surface is inclined relative to the first surface. A light source is disposed along the first end portion on a first axis. A light redistribution device is disposed on an entrance of the light guide for receiving light from the light source and redistributing a portion of the light perpendicular to the first axis to provide a uniform light distribution from the first surface.
摘要:
In accordance with the present invention, a liquid crystal display cell includes a first substrate having a light absorbent material patterned thereon. The light absorbent material includes a portion disposed within a pixel area. A conductive layer is formed on the light absorbent material for forming a first transparent electrode. A second electrode is spaced apart from the first electrode by a gap. The gap includes liquid crystal. A ridge or a trench is formed in the pixel area and projects into the liquid crystal. The ridge or trench is self-aligned to the portions of the light absorbent material in the pixel area. The first electrode and the second electrode provide an electric field therebetween wherein the ridge or trench provides pretilt control for the liquid crystal to provide an improved wide viewing angle and the portions of the light absorbent material absorb light leaked from the ridge. Other embodiments for active and passive displays are included as well as a method for employing the invention.
摘要:
A structural principle is described for control of the gap and the area around the periphery of a liquid crystal display by the formation of an insulating layer out of which, gap dimension maintaining posts and contaminant diffusion inhibiting segmented walls, remain after the display area is etched back out of the layer.
摘要:
The present invention features a process and a resulting article in which copper-based multilevel interconnects are fabricated. The copper-based multilevel interconnect formed by the inventive process first includes the process step of depositing a pattern of copper lines upon or in an applicable substrate, such as silicon dioxide. The copper lines are approximately one micron thick. The lines are coated with approximately 50 to 100 nm of titanium by sputter deposition, and undergo subsequent annealing at approximately 300.degree. C. to 400.degree. C. in an argon ambient. The titanium and copper layers are annealed to provide a Cu.sub.3 Ti alloy at the copper/titanium junction. The unreacted titanium between the copper features is then stripped away by dry etching with fluorine-based etch. The remaining Cu.sub.3 Ti alloy is subsequently transformed into TiN(O) and copper by a rapid thermal annealing in an NH.sub.3 atmosphere at an approximate temperature of below 650.degree. C., and then usually at temperatures ranging from between 550.degree. C. to 650.degree. C. for approximately five minutes. The copper lines are thereby capped with a layer of TiN(O), since oxygen is incorporated into the TiN layer during the heat treatment. The TiN(O) layer is more effective as a diffusion barrier than is TiN.
摘要:
The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.