公开(公告)号：US08591755B2

公开(公告)日：2013-11-26

申请号：US12882560

申请日：2010-09-15

申请人： Rajinder Dhindsa

发明人： Rajinder Dhindsa

IPC分类号： G01L21/30 ,  C23F1/00

CPC分类号： H01L21/67069 ,  C23F1/08 ,  G05B19/418 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67248

摘要： A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

摘要翻译： 确定在等离子体工艺期间施加的时间依赖衬底温度。 基于在给定时间的等离子体成分的粘附系数的控制来确定任何给定时间的时间依赖衬底温度。 还确定了在等离子体处理期间施加的上等离子体边界和衬底之间的时间依赖性温差。 在给定时间内，基于对基板的等离子体成分的通量的控制来确定任何给定时间的时间依赖性温度差。 时间依赖衬底温度和随时间变化的温差存储在数字格式中，适用于被定义并连接到上等离子体边界和衬底的直接温度控制的温度控制装置。 还提供了一种用于在等离子体处理期间实现上等离子体边界和衬底温度控制的系统。

公开(公告)号：US08573152B2

公开(公告)日：2013-11-05

申请号：US12875869

申请日：2010-09-03

申请人： Anthony de la Llera ,  Pratik Mankidy ,  Michael C. Kellogg ,  Rajinder Dhindsa

发明人： Anthony de la Llera ,  Pratik Mankidy ,  Michael C. Kellogg ,  Rajinder Dhindsa

IPC分类号： C23C16/455 ,  C23C16/505 ,  C23C16/509 ,  B23P19/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01R13/20

摘要： A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

摘要翻译： 在用于蚀刻半导体衬底的等离子体反应室中的喷头电极，垫圈组件及其组件设置有改进的气体注入孔图案，定位精度和减小的翘曲，这导致等离子体处理速率的均匀性提高。 将内部电极和垫圈组装在支撑构件上的方法包括凸轮锁的同时接合。

公开(公告)号：US08563619B2

公开(公告)日：2013-10-22

申请号：US11770664

申请日：2007-06-28

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： G01L21/30 ,  B44C1/22

CPC分类号： H01J37/21 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32697

摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing RF power to the chuck. The method also includes providing a tunable capacitance arrangement. The tunable capacitance arrangement is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.

摘要翻译： 提供了一种在等离子体处理室中处理衬底的方法。 基板设置在卡盘上方并被边缘环包围。 边缘环与卡盘电隔离。 该方法包括向卡盘提供RF功率。 该方法还包括提供可调谐电容布置。 可调谐电容布置耦合到边缘环以提供与边缘环的RF耦合，导致边缘环具有边缘环电位。 该方法还包括在等离子体处理室内产生等离子体以处理衬底。 处理衬底，同时可调电容布置被配置为使得边缘环电位在处理衬底的同时能够动态地调谐到衬底的DC电位。

公开(公告)号：US20130134876A1

公开(公告)日：2013-05-30

申请号：US13616641

申请日：2012-09-14

申请人： Anthony de la Llera ,  Michael C. Kellogg ,  Alexei Marakhtanov ,  Rajinder Dhindsa

发明人： Anthony de la Llera ,  Michael C. Kellogg ,  Alexei Marakhtanov ,  Rajinder Dhindsa

IPC分类号： H05H1/24 ,  H05K13/00

CPC分类号： H01J37/32082 ,  H01J37/32577

摘要： A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.

摘要翻译： 一种具有至少一个等离子体处理室的等离子体处理系统，包括可移动接地部件，RF接触部件，其被配置为当RF源向RF接触部件提供RF能量时从RF源接收RF能量;以及接地部件 加上地面。 等离子体处理系统还包括可操作地耦合到可移动接地部件的致动器，用于将可移动接地部件设置在第一位置和第二位置。 第一位置表示可移动接地部件不与RF接触部件和接地部件中的至少一个接触的位置。 第二位置表示可移动接地部件与RF接触部件和接地部件接触的位置。

公开(公告)号：US08449679B2

公开(公告)日：2013-05-28

申请号：US12222789

申请日：2008-08-15

申请人： Rajinder Dhindsa

发明人： Rajinder Dhindsa

IPC分类号： H05H1/00

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  H01J37/32724 ,  H01L21/67248

摘要： A temperature-controlled hot edge ring assembly adapted to surround a semiconductor substrate supported in a plasma reaction chamber is provided. A substrate support with an annular support surface surrounds a substrate support surface. A radio-frequency (RF) coupling ring overlies the annular support surface. A lower gasket is between the annular support surface and the RF coupling ring. The lower gasket is thermally and electrically conductive. A hot edge ring overlies the RF coupling ring. The substrate support is adapted to support a substrate such that an outer edge of the substrate overhangs the hot edge ring. An upper thermally conductive medium is between the hot edge ring and the RF coupling ring. The hot edge ring, RF coupling ring and annular support surface can be mechanically clamped. A heating element can be embedded in the RF coupling ring.

摘要翻译： 提供了一种适于围绕支撑在等离子体反应室中的半导体衬底的温度控制的热边缘环组件。 具有环形支撑表面的基板支撑件围绕基板支撑表面。 射频（RF）耦合环覆盖环形支撑表面。 下垫圈在环形支撑表面和RF联接环之间。 下垫圈是导电和导电的。 热边缘环覆盖RF耦合环。 衬底支撑件适于支撑衬底，使得衬底的外边缘突出于热边缘环。 上热传导介质位于热边缘环和RF耦合环之间。 热边缘环，RF耦合环和环形支撑表面可以机械夹紧。 加热元件可嵌入RF耦合环中。

公开(公告)号：US20130127476A1

公开(公告)日：2013-05-23

申请号：US13301580

申请日：2011-11-21

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi

IPC分类号： G01R27/28

CPC分类号： H01J37/32532 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32706

摘要： A system and method of measuring a self bias DC voltage on a semiconductor wafer in a plasma chamber includes generating a plasma between a top electrode and a top surface of an electrostatic chuck in a plasma chamber including applying one or more RF signals to one or both of the top electrode and electrostatic chuck. The wafer is supported on the top surface of an electrostatic chuck. The self bias DC voltage is developed on the wafer. A vibrating electrode is oscillated to produce a variable capacitance, the vibrating electrode is located in the electrostatic chuck. An electrical current is developed in a sensor circuit. An output voltage is measured across a sampling resistor in the sensor circuit, a second DC potential is applied to the vibrating electrode to nullify the output voltage. The second DC potential is equal to the self bias DC voltage on the wafer.

摘要翻译： 测量等离子体室中的半导体晶片上的自偏压DC电压的系统和方法包括在等离子体室中的顶电极和静电卡盘的顶表面之间产生等离子体，包括将一个或多个RF信号施加到一个或两个 的顶部电极和静电吸盘。 晶片被支撑在静电卡盘的顶表面上。 在晶圆上开发出自偏压直流电压。 振动电极振荡以产生可变电容，振动电极位于静电卡盘中。 在传感器电路中产生电流。 在传感器电路中的采样电阻两端测量输出电压，向振动电极施加第二个直流电位，使输出电压无效。 第二直流电位等于晶片上的自偏压直流电压。

公开(公告)号：US20130126475A1

公开(公告)日：2013-05-23

申请号：US13301725

申请日：2011-11-21

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H05H1/24 ,  C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32165

摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

公开(公告)号：US20130062321A1

公开(公告)日：2013-03-14

申请号：US13670350

申请日：2012-11-06

申请人： Rajinder Dhindsa

发明人： Rajinder Dhindsa

IPC分类号： B23K10/00

CPC分类号： C23C16/52 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32816 ,  H05H1/24 ,  H05H2001/466

摘要： A plasma processing system has an upper electrode and a lower electrode. The upper electrode includes a first and a second upper electrode portions. The first upper electrode portion annularly surrounds the second upper electrode portion. The lower electrode includes a first and a second lower electrode portions, and the first lower electrode portion annularly surrounds the second lower electrode portion. A radio frequency (RF) power source provides RF energy to the second lower electrode portion. The lower surface of the first upper electrode portion is non-planar with a substrate-facing surface of the second upper electrode portion such that the first gap between the lower surface of the first upper electrode portion and the upper surface of the first lower electrode portion is smaller than the second gap between the substrate bearing surface of the second lower electrode portion and the substrate-facing surface of the second upper electrode portion.

摘要翻译： 等离子体处理系统具有上电极和下电极。 上电极包括第一和第二上电极部分。 第一上电极部分环绕第二上电极部分。 下电极包括第一和第二下电极部分，第一下电极部分环绕第二下电极部分。 射频（RF）电源向第二下电极部分提供RF能量。 第一上部电极部分的下表面与第二上部电极部分的与基板相对的表面是非平面的，使得第一上部电极部分的下表面和第一下部电极部分的上表面之间的第一间隙 小于第二下部电极部的基板承载面与第二上部电极部的与面向基板的表面之间的第二间隙。

公开(公告)号：US08342122B2

公开(公告)日：2013-01-01

申请号：US12367450

申请日：2009-02-06

申请人： Rajinder Dhindsa

发明人： Rajinder Dhindsa

IPC分类号： C23C4/12

CPC分类号： C23C16/52 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32568 ,  H05H1/24 ,  H05H2001/466

摘要： A plasma processing system having an upper electrode and a lower electrode is provided. The tipper electrode and lower electrode form two regions with different gaps. By moving one or both of the upper electrode and the lower electrode, it is possible to vary the ratio area of RF coupling depending on whether plasma is permitted to sustain in the first region or in both the first region and the second region.

摘要翻译： 提供具有上电极和下电极的等离子体处理系统。 翻转电极和下电极形成具有不同间隙的两个区域。 通过移动上部电极和下部电极中的一个或两个，可以根据等离子体是否允许在第一区域或第一区域和第二区域两者中维持来改变RF耦合的比率面积。

公开(公告)号：US20120312475A1

公开(公告)日：2012-12-13

申请号：US13526391

申请日：2012-06-18

申请人： Rajinder Dhindsa ,  Hudson Eric ,  Alexei Marakhtanov ,  Andreas Fischer

发明人： Rajinder Dhindsa ,  Hudson Eric ,  Alexei Marakhtanov ,  Andreas Fischer

IPC分类号： H01L21/3065

CPC分类号： H01J37/32174 ,  G03F7/427 ,  H01J37/32091 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/32532 ,  H01L21/306 ,  H01L21/31138

摘要： A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode.

摘要翻译： 提供了具有用于处理衬底的等离子体处理室的电容耦合等离子体处理系统。 等离子体处理系统至少包括用于处理衬底的上电极和下电极，衬底在等离子体处理期间设置在下电极上。 等离子体处理系统还包括用于向下电极提供至少第一RF信号的装置，第一RF信号具有第一RF频率。 第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。 等离子体处理系统还包括用于整流感应RF信号以产生经整流的RF信号的装置，使得整流的RF信号比负偏置更积极地偏置，其中衬底被配置为在被整流的RF信号被提供给 上电极。