公开(公告)号：USD541987S1

公开(公告)日：2007-05-01

申请号：US29262876

申请日：2006-07-13

申请人： Akira Sugawara

设计人： Akira Sugawara

公开(公告)号：US20050153489A1

公开(公告)日：2005-07-14

申请号：US11078440

申请日：2005-03-14

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US06699337B2

公开(公告)日：2004-03-02

申请号：US10007432

申请日：2001-12-03

申请人： Koichi Hatakeyama ,  Akira Sugawara

发明人： Koichi Hatakeyama ,  Akira Sugawara

IPC分类号： C22F108

CPC分类号： C22C9/02 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  C22F1/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ingot of a copper-base alloy containing a total of 0.01-30 wt % of at least one element selected from among Sn, Ni, P, Zn, Si, Fe, Co, Mg, Ti, Cr, Zr and Al, with the balance being Cu and incidental impurities, is homogenized by annealing, subjected to repeated cycles of cold rolling and annealing, then cold rolled at a reduction ratio Z which satisfies the following relation: Z≧100−10X−Y  (1) [where Z is the percent reduction by cold rolling; X is the content in wt % of Sn; Y is the total content in wt % of any elements other than Sn], and thereafter subjected to cold annealing at a temperature below the recrystallization temperature to produce a copper-base alloy having a surface X-ray diffraction intensity ratio SND of at least 10 [SND=I{220}/I{200}; I{220} is the X-ray diffraction intensity of {220} and I{200} is the X-ray diffraction intensity of {200}] while exhibiting improved punching properties on press due to the balance between electrical conductivity, strength, spring property, hardness and bending properties.

摘要翻译： 含有0.01-30重量％的选自Sn，Ni，P，Zn，Si，Fe，Co，Mg，Ti，Cr，Zr和Al中的至少一种元素的铜基合金锭， 余量为Cu和杂质，通过退火均质化，经过冷轧和退火的重复循环，然后以满足以下关系式的折算率Z进行冷轧; [Z为冷轧减少率; X为Sn的重量％含量; Y是除Sn以外的任何元素的重量％的总含量，然后在低于再结晶温度的温度下进行冷退火，得到表面X射线衍射强度比SND为至少10的铜基合金 [SND = I {220} / I {200}; I {220}是{220}的X射线衍射强度，I {200}是{200}的X射线衍射强度，同时由于导电性，强度，弹簧之间的平衡，在冲压时表现出改善的冲压性能 性能，硬度和弯曲性能。

公开(公告)号：US06312762B1

公开(公告)日：2001-11-06

申请号：US09496697

申请日：2000-02-02

申请人： Akira Sugawara ,  Yoshitake Hana ,  Takayoshi Endo

发明人： Akira Sugawara ,  Yoshitake Hana ,  Takayoshi Endo

IPC分类号： B05D302

CPC分类号： C23C28/322 ,  C22F1/02 ,  C22F1/08 ,  C23C26/00 ,  C23C28/325 ,  C23C28/345 ,  C25D5/505 ,  H01R13/03

摘要： A process for the production of copper or a copper base alloy that provides a surface having improved characteristics suitable for the production of a connector or a charging-socket of an electric automobile by having a decreased coefficient of friction on the surface and improved resistance to abrasion. The process comprises coating copper or a copper alloy with Sn, followed by heat treating the resulting Sn-plated copper or copper base in an atmosphere having an oxygen content of no more than 5%, thereby forming on an outermost surface thereof an oxide film and beneath the surface a layer of an intermetallic compound mainly comprising Cu—Sn.

摘要翻译： 一种制造铜或铜基合金的方法，其通过在表面上具有降低的摩擦系数和改善的耐磨性来提供具有适于生产电动汽车的连接器或充电插座的改善特性的表面 。 该工艺包括用Sn涂覆铜或铜合金，然后在氧含量不超过5％的气氛中热处理所得到的镀Sn的铜或铜基，从而在其最外表面上形成氧化膜， 在表面下方有一层主要包含Cu-Sn的金属间化合物。

公开(公告)号：US6155455A

公开(公告)日：2000-12-05

申请号：US434295

申请日：1999-11-05

申请人： Hidekazu Yajima ,  Akira Sugawara ,  Seiji Ebukuro ,  Takeo Igarashi ,  Masaki Nakayama ,  Hiroshi Ogomori

发明人： Hidekazu Yajima ,  Akira Sugawara ,  Seiji Ebukuro ,  Takeo Igarashi ,  Masaki Nakayama ,  Hiroshi Ogomori

IPC分类号： G07F9/02 ,  G07F9/10 ,  G07F11/08 ,  G07F11/32 ,  G07F11/00

CPC分类号： G07F9/10 ,  G07F11/08 ,  G07F11/32 ,  G07F9/02

摘要： There is disclosed a vending machine in which a plurality of article columns are slant to be directed to a plurality of vending mechanisms, respectively. Each of the article columns is composed of a plurality of shelves for accommodating a row of articles. Each of the article columns is provided with a vending mechanism, so that articles of different kinds can be sold dependent on the number of the article columns. For this structure, at least one vending mechanism is set for an arbitrary one of article selection buttons. Thus, when the number of the article columns for accommodating the same kind of articles is set in accordance with the sales amount of the articles, different kinds of articles are sold out at an approximately same time.

摘要翻译： 公开了一种自动售货机，其中多个物品列分别倾斜以指向多个销售机构。 每个文章列由用于容纳一排物品的多个搁架组成。 每个文章列都提供有自动售货机构，以便可以根据文章列的数量出售不同种类的物品。 对于这种结构，至少一个售货机构被设置用于任意一个物品选择按钮。 因此，当根据物品的销售量设定用于容纳同一种物品的物品列的数量时，不同种类的物品在大致相同的时间被售出。

公开(公告)号：US6049092A

公开(公告)日：2000-04-11

申请号：US838783

申请日：1997-04-10

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31144 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L21/31116 ,  H01L21/31683

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an loff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间设置具有较高电阻率的区域以便减小漏电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US5885888A

公开(公告)日：1999-03-23

申请号：US800184

申请日：1997-02-13

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C23F1/20 ,  H01L21/311 ,  H01L21/336 ,  H01L29/423 ,  H01L21/302

CPC分类号： H01L29/66757 ,  H01L21/31111 ,  H01L29/42372 ,  Y10S438/97

摘要： An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide layer formed on the surface of a material containing aluminum as the principal component thereof.

摘要翻译： 至少包含磷酸，乙酸和硝酸的蚀刻材料，其中加入铬酸。 还要求保护的是使用上述蚀刻材料的蚀刻工艺，条件是该方法包括通过使用溶液选择性地蚀刻形成在包含铝的材料的表面上的氧化铝层作为其主要成分。

公开(公告)号：US5856853A

公开(公告)日：1999-01-05

申请号：US839936

申请日：1997-04-18

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/136

CPC分类号： G02F1/136204

摘要： In an active matrix type liquid crystal electro-optical device using thin-film transistors, a metal film is formed on a transparent electrode that is opposed to the thin-film transistors. The metal film is oxidized by anode oxidation method using the electrode as an anode, to form a metal oxide film that serves as a short circuit preventing film. Alternatively, after a grid-shaped mask is formed on the metal film, the metal film is oxidized using the electrode as an anode, the mask is removed, and the metal film is again anode-oxidized, to form a non-oxidized portion. Thus, transparent and opaque regions, i.e., a black matrix is formed.

摘要翻译： 在使用薄膜晶体管的有源矩阵型液晶电光装置中，在与薄膜晶体管相对的透明电极上形成金属膜。 通过使用电极作为阳极的阳极氧化法将金属膜氧化，形成用作防短路膜的金属氧化物膜。 或者，在金属膜上形成栅格状掩模之后，使用电极作为阳极氧化金属膜，除去掩模，再次阳极氧化金属膜，形成非氧化部分。 因此，形成透明和不透明区域，即黑矩阵。

公开(公告)号：US5849604A

公开(公告)日：1998-12-15

申请号：US613372

申请日：1996-03-11

申请人： Akira Sugawara ,  Toshimitsu Konuma

发明人： Akira Sugawara ,  Toshimitsu Konuma

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L27/124

摘要： A resist mask is formed on an electrode mainly made of aluminum. An anodic oxide film is formed on the electrode excluding the masked region by performing anodization in an electrolyte. A contact hole can easily be formed in the masked region because the anodic oxide film is not formed there. By removing a portion of the gate electrode which corresponds to an opening in forming a contact electrode, the gate electrode can be divided at the same time as the contact electrode is formed.

摘要翻译： 在主要由铝制成的电极上形成抗蚀剂掩模。 通过在电解质中进行阳极氧化，在除了被掩蔽区域之外的电极上形成阳极氧化膜。 由于阳极氧化膜不形成在掩模区域，所以容易形成接触孔。 通过在形成接触电极时去除与开口相对应的栅电极的一部分，可以在形成接触电极的同时分割栅电极。

公开(公告)号：US5830786A

公开(公告)日：1998-11-03

申请号：US654030

申请日：1996-05-28

申请人： Hongyong Zhang ,  Hideki Uochi ,  Shunpei Yamazaki ,  Yasuhiko Takemura ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Hongyong Zhang ,  Hideki Uochi ,  Shunpei Yamazaki ,  Yasuhiko Takemura ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/76 ,  H01L29/49 ,  H01L21/3215

CPC分类号： H01L21/02071 ,  H01L21/28079 ,  H01L21/32134 ,  H01L29/4908 ,  H01L29/66757

摘要： A process for fabricating an electronic circuit by oxidizing the surroundings of a metallic interconnection such as of aluminum, tantalum, and titanium, wherein anodic oxidation is effected at a temperature not higher than room temperature, preferably, at 10.degree. C. or lower, and more preferably, at 0.degree. C. or lower. The surface oxidation rate of a metallic interconnection can be maintained constant to provide a surface free of irregularities.

摘要翻译： 通过氧化诸如铝，钽和钛的金属互连的周围来制造电子电路的方法，其中阳极氧化在不高于室温，优选在10℃或更低的温度下进行，以及 更优选在0℃以下。 金属互连的表面氧化速率可以保持恒定，以提供没有凹凸的表面。