公开(公告)号：US07151015B2

公开(公告)日：2006-12-19

申请号：US09852672

申请日：2001-05-11

申请人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

发明人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/124 ,  H01L21/32136 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78684 ,  H01L2029/7863

摘要： There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.

摘要翻译： 当形成具有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程复杂并且处理次数增加的问题。 在制造半导体器件的方法中，在第二掺杂工艺中形成低浓度杂质区（24,25）之后，与第三电极（18c）重叠的低浓度杂质区的宽度和 可以通过第四蚀刻工艺来自由地控制不与第三电极重叠的低浓度杂质区域。 因此，在与第三电极重叠的区域中，实现电场浓度的松弛，然后可以防止热载流子注入。 并且，在不与第三电极重叠的区域中，可以抑制截止电流值。

公开(公告)号：US20060214306A1

公开(公告)日：2006-09-28

申请号：US11420390

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L23/52 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01003 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.

摘要翻译： 通过转印技术提供具有形成为集成薄膜的多个器件形成层的半导体芯片。 根据本发明，可以通过转移厚度最多为50um的器件形成层，通过技术将其从衬底分离成另一衬底而制成形成薄膜并且高度集成的半导体芯片 用于转移和转移厚度至多为50um的另一器件形成层，其从另一衬底分离到上述器件形成层，并且重复该转印过程。

公开(公告)号：US20060208263A1

公开(公告)日：2006-09-21

申请号：US11433084

申请日：2006-05-12

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC分类号： H01L31/12 ,  H01L21/00

CPC分类号： H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

公开(公告)号：US20060186399A1

公开(公告)日：2006-08-24

申请号：US11206000

申请日：2005-08-18

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L29/08

CPC分类号： H01L23/12 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3281 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

公开(公告)号：US07045438B2

公开(公告)日：2006-05-16

申请号：US10199496

申请日：2002-07-22

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Mayumi Mizukami

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Mayumi Mizukami

IPC分类号： H01L21/30

CPC分类号： H01L51/529 ,  G02F1/133305 ,  G02F2001/13613 ,  H01L21/3143 ,  H01L21/31616 ,  H01L21/318 ,  H01L27/3244 ,  H01L27/3295 ,  H01L51/0004 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368

摘要： A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.

公开(公告)号：US07015505B2

公开(公告)日：2006-03-21

申请号：US10684936

申请日：2003-10-14

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

公开(公告)号：US07015154B2

公开(公告)日：2006-03-21

申请号：US10750854

申请日：2004-01-05

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Takeshi Fukunaga

IPC分类号： H01L21/26

CPC分类号： C23C14/564 ,  C23C14/04 ,  C23C14/12 ,  C23C14/243 ,  C23C14/54

摘要： A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

摘要翻译： 提供了一种清除附着在不暴露于大气中的设备的气相沉积材料的方法。 将附着在设置在成膜室上的设备（成膜装置的部件）如基板保持器，蒸镀掩模，掩模保持器或防粘附屏蔽物的气相沉积材料进行热处理 。 因此，附着的气相沉积材料被重新升华，并通过真空泵通过排气除去。 通过在制造电光装置的步骤中包括这种清洁方法，缩短了制造步骤，并且可以实现具有高可靠性的电光装置。

公开(公告)号：US06997985B1

公开(公告)日：2006-02-14

申请号：US08768535

申请日：1996-12-18

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

IPC分类号： C30B1/06

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78696

摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

摘要翻译： 通过在低于非晶硅的正常结晶温度或低于基板的玻璃化转变点的温度下退火基本上非晶硅膜以使硅膜结晶的方法来制造诸如薄膜晶体管的半导体器件。 镍，铁，钴或铂的岛，条纹，线或点，镍，铁，钴或铂的硅化物，乙酸盐或硝酸盐，含有各种盐，包含至少一种镍， 铁，钴和铂用作结晶的起始原料。 这些材料形成在非晶硅膜上或下方。

公开(公告)号：US20050282357A1

公开(公告)日：2005-12-22

申请号：US11199084

申请日：2005-08-09

申请人： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  G03C3/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.

摘要翻译： 本发明的目的是提供一种剥离方法，而不会损坏剥离层，并且不仅可以分离具有小表面积的剥离层，而且可以分离具有大表面积的剥离层的整个表面。 此外，本发明的目的是通过将剥离层粘贴到各种基板上提供轻量的半导体器件及其制造方法。 特别地，本发明的目的是通过将诸如TFT的各种元件粘贴到柔性膜上来提供轻量的半导体器件及其制造方法。 即使在第一材料层11形成在基板上并且第二材料层12形成在与上述第一材料层11相邻的情况下，此外，层压膜形成，500℃以上的加热处理或激光束 进行辐射处理，如果第一材料层在剥离之前具有拉伸应力，并且第二材料层具有压缩应力，则可以通过物理手段容易地在第二材料层12的中间层或界面中进行优异的分离。

公开(公告)号：US20050127371A1

公开(公告)日：2005-06-16

申请号：US11043283

申请日：2005-01-27

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Mai Akiba

IPC分类号： H05B33/00 ,  H01L27/32 ,  H01L51/52 ,  H01L29/04

CPC分类号： H01L51/0097 ,  H01L27/3244 ,  H01L27/326 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/529 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5315 ,  H01L2251/5338

摘要： The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.