公开(公告)号：US20190139886A1

公开(公告)日：2019-05-09

申请号：US15877398

申请日：2018-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Yu Chen ,  Chih-Hua Chen ,  Ching-Hua Hsieh ,  Hsiu-Jen Lin ,  Yu-Chih Huang ,  Yu-Peng Tsai ,  Chia-Shen Cheng ,  Chih-Chiang Tsao ,  Jen-Jui Yu

IPC: H01L23/528 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01L23/522

Abstract: A package structure includes an insulating encapsulation, at least one die, and conductive structures. The at least one die is encapsulated in the insulating encapsulation. The conductive structures are located aside of the at least one die and surrounded by the insulating encapsulation, and at least one of the conductive structures is electrically connected to the at least one die. Each of the conductive structures has a first surface, a second surface opposite to the first surface and a slant sidewall connecting the first surface and the second surface, and each of the conductive structures has a top diameter greater than a bottom diameter thereof, and wherein each of the conductive structures has a plurality of pores distributed therein.

公开(公告)号：US10157862B1

公开(公告)日：2018-12-18

申请号：US15662266

申请日：2017-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Yu Chen ,  Ching-Hua Hsieh ,  Chung-Shi Liu ,  Hsiu-Jen Lin ,  Chia-Lun Chang

IPC: H01L23/52 ,  H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56

Abstract: An integrated fan-out package including an integrated circuit component, an insulating encapsulation, a redistribution circuit structure and a plurality of conductive terminals is provided. The insulating encapsulation laterally encapsulates sidewalls of the integrated circuit component. The redistribution circuit structure is disposed on the insulating encapsulation and the integrated circuit component. The redistribution circuit structure is electrically connected to the integrated circuit component and the redistribution circuit structure includes a plurality of ball pads. Each of the conductive terminals includes a conductive ball and a ring-shaped flux structure, wherein each of the conductive balls is disposed on and electrically connected to one of the ball pads. Each of the ring-shaped flux structures is disposed on the redistribution circuit structure. Each of the ring-shaped flux structure is disposed around and in contact with a bottom portion of the conductive ball. A method of fabricating an integrated fan-out package is also provided.

公开(公告)号：US20160351463A1

公开(公告)日：2016-12-01

申请号：US14724811

申请日：2015-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Wei Chen ,  Wei-Yu Chen ,  Cheng-Hsien Hsieh

IPC: H01L23/31 ,  H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/3121 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/06572 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Package structures and methods of forming the same are disclosed. A package structure includes a die, a dielectric layer, an encapsulant and a plurality of supports. The die includes, over a first side thereof, a plurality of connectors. The dielectric layer is formed over the first side of the die aside the connectors. The encapsulant is aside the die. The supports penetrate through the dielectric layer. The grinding rate of the supports is substantially the same as that of the encapsulant but different from that of the dielectric layer.

Abstract translation: 公开了包装结构及其形成方法。 封装结构包括管芯，电介质层，密封剂和多个支撑件。 模具在其第一侧上包括多个连接器。 电介质层形成在模具的第一侧上，而不是连接器。 密封剂在模具旁边。 支撑体穿过介电层。 载体的研磨速率与密封剂的研磨速度基本相同，但与介电层的磨削速率不同。

公开(公告)号：US09443758B2

公开(公告)日：2016-09-13

申请号：US14102548

申请日：2013-12-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiang-Jen Tseng ,  Wei-Yu Chen ,  Ting-Wei Chiang ,  Li-Chun Tien

IPC: H01L23/00 ,  H01L21/768 ,  H01L25/065 ,  H01L23/528 ,  H01L25/00 ,  H01L23/48 ,  H01L21/822 ,  H01L27/06 ,  H01L23/535 ,  H01L21/74 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L24/25 ,  H01L21/743 ,  H01L21/76838 ,  H01L21/8221 ,  H01L23/481 ,  H01L23/522 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/535 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: A stacked integrated circuit includes multiple tiers vertically connecting together. A multi-layer horizontal connecting structure is fabricated inside a substrate of a tier. Layers of the horizontal connecting structure have different patterns as viewed from above the substrate.

Abstract translation: 堆叠集成电路包括垂直连接在一起的多层。 在层的衬底内制造多层水平连接结构。 水平连接结构的层从衬底上方观察到不同的图案。