公开(公告)号：US10727045B2

公开(公告)日：2020-07-28

申请号：US15967480

申请日：2018-04-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wan-Lin Tsai ,  Jung-Hau Shiu ,  Ching-Yu Chang ,  Jen Hung Wang ,  Shing-Chyang Pan ,  Tze-Liang Lee

IPC: H01L21/768 ,  C23C16/02 ,  H01L21/311 ,  H01L23/528 ,  H01L21/02 ,  H01L21/033 ,  H01L21/8238 ,  C23C16/04 ,  C23C16/30 ,  C23C16/455 ,  C23C16/40 ,  C23C14/08 ,  C23C14/06 ,  H01L21/308 ,  H01L29/66 ,  H01J37/32 ,  C23C14/22

Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.

公开(公告)号：US10539878B2

公开(公告)日：2020-01-21

申请号：US15588773

申请日：2017-05-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Lilin Chang ,  Ching-Yu Chang

IPC: G03F7/32 ,  G03F7/20

Abstract: A lithography developing composition is disclosed. In an exemplary aspect, the composition comprises an alkaline aqueous solution having a first organic base and a second organic base, wherein the first organic base is a quaternary ammonium hydroxide with pendant groups on its side chains and the second organic base is another quaternary ammonium hydroxide with electron withdrawing groups on its side chains. In another exemplary aspect, the composition comprises an alkaline aqueous solution having an organic base that is a quaternary ammonium hydroxide with at least one electron withdrawing group on its side chains and the organic base has basicity weaker than Tetramethylammonium hydroxide (TMAH). In yet another exemplary aspect, the composition comprises an alkaline aqueous solution having an organic base that is Trimethylphenylammonium hydroxide or Benzyldimethyltetradecylammonium hydroxide.

公开(公告)号：US10421867B2

公开(公告)日：2019-09-24

申请号：US14791877

申请日：2015-07-06

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang

IPC: B05D3/12 ,  C09D5/00 ,  H01L21/027 ,  H01L21/67 ,  G03F7/16 ,  H01L21/02 ,  B05D3/10 ,  B05D7/00 ,  B05D1/00

Abstract: A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and identifying a material of the substrate upon which a layer is to be formed. A priming material is dispensed on the material of the substrate, and a film-forming material is applied to the priming material. The priming material includes a molecule containing a first group based on an attribute of the substrate material and a second group based on an attribute of the film-forming material. Suitable attributes of the substrate material and the film-forming material include water affinity and degree of polarity and the first and second groups may be selected to have a water affinity or degree of polarity that corresponds to that of the substrate material and the film-forming material, respectively.

公开(公告)号：US10249570B2

公开(公告)日：2019-04-02

申请号：US16048018

申请日：2018-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chen-Yu Chen ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L23/544 ,  H01L29/06 ,  G03F7/20 ,  H01L21/302 ,  H01L29/78

Abstract: An overlay mark includes a first feature of a plurality of first alignment segments extending along a first direction in a first layer, a second feature of a plurality of second alignment segments extending along a second direction in a second layer over the first layer, and a third feature of a plurality of third alignment segments extending along the first direction and a plurality of fourth alignment segments extending along the second direction in a third layer over the second layer. In a plan view, each first alignment segment of the plurality of first alignment segments is adjacent to a corresponding third alignment segment of the plurality of third alignment segments along the first direction, and each second alignment segment of the plurality of second alignment segments is adjacent to a corresponding forth alignment segment of the plurality of fourth alignment segments along the second direction.

公开(公告)号：US20190041749A1

公开(公告)日：2019-02-07

申请号：US16154292

申请日：2018-10-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Han Lai ,  Ching-Yu Chang ,  Chen-Hau Wu

IPC: G03F7/039 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0397 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325

Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.

公开(公告)号：US10168625B2

公开(公告)日：2019-01-01

申请号：US15639272

申请日：2017-06-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Burn Jeng Lin ,  Ching-Yu Chang

IPC: G03B27/52 ,  G03B27/42 ,  G03F7/20

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.

公开(公告)号：US10157739B2

公开(公告)日：2018-12-18

申请号：US15875788

申请日：2018-01-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsung-Han Ko ,  Ching-Yu Chang ,  Kuan-Hsin Lo

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  G03F7/00

Abstract: Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.

公开(公告)号：US10095113B2

公开(公告)日：2018-10-09

申请号：US14334612

申请日：2014-07-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Han Lai ,  Ching-Yu Chang

IPC: G03F7/039 ,  G03F7/32 ,  G03F7/20

Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.

公开(公告)号：US20180226293A1

公开(公告)日：2018-08-09

申请号：US15942947

申请日：2018-04-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Bo-Jiun Lin ,  Ching-Yu Chang ,  Hai-Ching Chen ,  Tien-I Bao

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532

CPC classification number: H01L21/76837 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2221/1047

Abstract: A device includes a substrate; a first layer over the substrate, the first layer containing a metallic material, wherein the first layer includes a trench; and a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

公开(公告)号：US10043759B2

公开(公告)日：2018-08-07

申请号：US14551653

申请日：2014-11-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chen-Yu Chen ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L23/544 ,  G03F7/20 ,  H01L21/302 ,  H01L29/06 ,  H01L29/78

Abstract: An overlay mark comprises a first feature in a first layer. The first feature has a length extending in a first longitudinal direction and a width extending in a second longitudinal direction. The length of the first feature is greater than the width of the first feature. The overlay mark also comprises a second feature in a second layer over the first layer. The second feature has a length extending in the second longitudinal direction and a width extending in the first longitudinal direction. The length of the second feature is greater than the width of the second feature. The overlay mark further comprises a third feature in a third layer over the second layer. The third feature is a box-shaped opening in the third layer.