FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR MANUFACTURING FERROELECTRIC FILM
    91.
    发明申请
    FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR MANUFACTURING FERROELECTRIC FILM 审中-公开
    电解膜,溶胶凝胶溶液,薄膜形成方法和制造电磁膜的方法

    公开(公告)号:US20130165313A1

    公开(公告)日:2013-06-27

    申请号:US13809264

    申请日:2010-07-12

    IPC分类号: C04B35/49 B05D5/12

    摘要: To produce a ferroelectric film including a non-lead material. An embodiment of the present invention is a ferroelectric film characterized by being represented by (Baaα1-a)(Tibβ1-b(α: one or more metal elements among Mg (magnesium), Ca2+ (calcium), Sr (strontium), Li (lithium), Na (sodium), K (potassium), Rb (rubidium), Cs (cesium), Mg (magnesium), Ca2+ (calcium) and Sr (strontium), β: one or more metal elements among Ti (titanium), V (vanadium), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (copper), Zr (zirconium), Nb (niobium), Mo (molybdenum), Ru (ruthenium), Rh (rhodium), Pd (palladium), Ag (silver), Sc (scandium), Y (yttrium), La (lanthanum), Ce (cerium), Pr (praseodymium), Nd (neodymium), Sm (samarium), Eu (europium), Gd (gadolinium), Tb (terbium), Dy (dysprosium), Ho (holmium), Er (erbium), Tm (thulium), Yb (ytterbium), Lu (lutetium), Ha (hafnium) and Ta (tantalum)).

    摘要翻译: 制造包含非铅材料的铁电体膜。 本发明的一个实施方案是由(Baaalpha1-a)(Tibbeta1-b(α:Mg(镁))中的一种或多种金属元素,Ca 2+(钙),Sr(锶),Li( 锂(钠),钾(钾),Rb(铷),Cs(铯),Mg(镁),Ca2 +(钙)和Sr(锶),β:钛(钛) ,钒(钒),铬(铬),锰(锰),铁(Fe),钴(钴),镍(镍),铜(铜),锆(锆),铌(铌) ,Ru(钌),Rh(铑),Pd(钯),Ag(银),Sc(钪),Y(钇),La(镧),Ce(铈),Pr(镨) ,钐(钐),铕(铕),钆(铽),铽(铽),钆(钆),铽(铽),镝(镝),钬(钬) ,铪(铪)和钽(钽))。

    Piezoelectric material and piezoelectric element
    92.
    发明授权
    Piezoelectric material and piezoelectric element 有权
    压电材料和压电元件

    公开(公告)号:US08395302B2

    公开(公告)日:2013-03-12

    申请号:US13328302

    申请日:2011-12-16

    IPC分类号: H01L41/09

    摘要: A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x) % of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+x Tc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.

    摘要翻译: 压电元件包括​​第一电极,设置在第一电极上的压电膜和设置在压电膜上的第二电极。 该压电膜由无铅化的压电材料构成,并且通过混合100(1-x)%的在25℃下具有0.5C / m 2以上的自发极化的材料A和100​​%的具有 压电特性和介电常数在25℃下为1000以上,其中(1-x)Tc(A)+ x Tc(B)≥300℃,其中Tc(A)是材料的居里温度 A和Tc(B)是材料B的居里温度。

    PRESSURIZING-TYPE LAMP ANNEALING DEVICE, METHOD FOR PRODUCING THIN FILM, AND METHOD FOR USING PRESSURIZING-TYPE LAMP ANNEALING DEVICE
    93.
    发明申请
    PRESSURIZING-TYPE LAMP ANNEALING DEVICE, METHOD FOR PRODUCING THIN FILM, AND METHOD FOR USING PRESSURIZING-TYPE LAMP ANNEALING DEVICE 有权
    压力型灯泡退火装置,薄膜​​生产方法,以及使用加压型灯具退火装置的方法

    公开(公告)号:US20130026152A1

    公开(公告)日:2013-01-31

    申请号:US13579394

    申请日:2010-08-02

    IPC分类号: H01L21/26 H05B6/00

    摘要: Provided is a pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment is a pressurizing-type lamp annealing device which includes: a treatment chamber 25; a holding part 23 disposed into the treatment chamber to hold a substrate to be treated 22; a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube 20 disposed into the treatment chamber; and a lamp heater 19 placed in the treatment chamber to irradiate the substrate to be treated with a lamp light, through the transparent tube.

    摘要翻译: 提供一种可以容易地处理具有大表面积的待处理基板的加压型灯退火装置。 一个实施例是一种加压型灯退火装置,包括:处理室25; 设置在处理室中以保持要处理的基板22的保持部23; 用于将加压气体引入处理室的气体导入机构; 用于排出处理室中的气体的气体排出机构; 设置在处理室中的透明管20; 以及放置在处理室中的灯加热器19,以通过透明管照射待处理的基板。

    Piezoelectric material and piezoelectric element
    94.
    发明授权
    Piezoelectric material and piezoelectric element 有权
    压电材料和压电元件

    公开(公告)号:US08102100B2

    公开(公告)日:2012-01-24

    申请号:US12413796

    申请日:2009-03-30

    IPC分类号: H01L41/09

    摘要: A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+xTc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.

    摘要翻译: 压电元件包括​​第一电极,设置在第一电极上的压电膜和设置在压电膜上的第二电极。 该压电膜由无铅化的压电材料构成,并且通过混合100(1-x)%的在25℃下具有0.5C / m 2以上的自发极化的材料A和100​​%的具有 压电特性和在25℃下介电常数为1000以上的介电常数,其中(1-x)Tc(A)+ xTc(B)≥300℃,其中Tc(A)是材料A的居里温度 Tc(B)是材料B的居里温度。

    Method for manufacturing a ferroelectric film
    99.
    发明授权
    Method for manufacturing a ferroelectric film 有权
    铁电体膜的制造方法

    公开(公告)号:US07419579B2

    公开(公告)日:2008-09-02

    申请号:US11085603

    申请日:2005-03-21

    申请人: Takeshi Kijima

    发明人: Takeshi Kijima

    摘要: A method for manufacturing a ferroelectric film includes the steps of causing, in a solution containing sol-gel raw materials, hydrolysis and polycondensation to the sol-gel raw materials to form a liquid containing particulate gels dispersed therein, and forming a ferroelectric film by a migration electrodeposition method, using the liquid containing particulate gels, through electrodepositing the particulate gels on an electrode.

    摘要翻译: 制造铁电体膜的方法包括以下步骤:在含有溶胶 - 凝胶原料的溶液中,使溶胶 - 凝胶原料进行水解和缩聚以形成分散在其中的含有颗粒状凝胶的液体,并且通过以下步骤形成铁电体膜: 迁移电沉积法,使用含有颗粒凝胶的液体,通过将电极上的颗粒凝胶电沉积。

    FERROELECTRIC CAPACITOR
    100.
    发明申请
    FERROELECTRIC CAPACITOR 审中-公开
    电磁电容器

    公开(公告)号:US20080123243A1

    公开(公告)日:2008-05-29

    申请号:US11946366

    申请日:2007-11-28

    IPC分类号: H01G4/00

    摘要: A ferroelectric capacitor includes: an electrode including a platinum film; a seed layer that is formed above the electrode and is composed of oxide having a perovskite structure expressed by a general formula, A(B1-xCx)O3; and a ferroelectric layer formed above the seed layer, wherein A is composed of at least one of Sr and Ca, B is composed of at least one of Ti, Zr and Hf, C is composed of at least one of Nb and Ta, and X is in a range of 0

    摘要翻译: 铁电电容器包括:包含铂膜的电极; 形成在电极上方并由具有由通式表示的钙钛矿结构的氧化物组成的晶种层A(B 1-x C x X)O 3 ; 以及形成在种子层上的铁电层,其中A由Sr和Ca中的至少一种构成,B由Ti,Zr和Hf中的至少一种构成,C由Nb和Ta中的至少一种构成,以及 X在0