公开(公告)号：US11747195B2

公开(公告)日：2023-09-05

申请号：US17801004

申请日：2021-02-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuya Hashi ,  Shinya Iwashina ,  Takashi Baba ,  Shigeyuki Nakamura

IPC: G01J1/44 ,  G01S7/481 ,  G01S7/487 ,  G01S7/493 ,  H01L27/144

CPC classification number: G01J1/44 ,  G01S7/4816 ,  G01S7/4876 ,  G01S7/493 ,  H01L27/1446 ,  G01J2001/448 ,  G01J2001/4466

Abstract: In a light detection device, a circuit substrate includes a plurality of signal processing units which process a detection signal output from a corresponding pixel. Light-receiving regions of a plurality of avalanche photodiodes are two-dimensionally arranged for every pixel. In each of the signal processing units, a timing measurement unit measures timing at which light is incident on a corresponding pixel, based on the detection signal. An energy measurement unit measures energy of light incident on a corresponding pixel, based on the detection signal. A storage unit stores a measurement result in the timing measurement unit and the energy measurement unit. A light detection region where a plurality of the pixels are provided and a signal processing region where a plurality of the signal processing units are provided overlap each other at least at a part.

公开(公告)号：US20230170359A1

公开(公告)日：2023-06-01

申请号：US17990600

申请日：2022-11-18

Applicant: HENSOLDT Sensors GmbH

Inventor： Michael Assel

IPC: H01L27/146 ,  H04N5/378 ,  G01J1/44

CPC classification number: H01L27/14607 ,  G01J1/44 ,  H01L27/14683 ,  H04N5/378 ,  G01J2001/446 ,  G01J2001/448

Abstract: A semiconductor detector for tracking of point-like sources comprises a plurality of pixels. The pixels are arranged in a rectangular lattice. Each pixel has a surface with a photosensitive region for detecting light. The photosensitive region has a geometric layout adapted to reduce a signal variation if the point source moves from a first pixel to a second pixel, wherein the second pixel is located at an adjacent lattice position with respect to the first pixel.

公开(公告)号：US20230161009A1

公开(公告)日：2023-05-25

申请号：US18158448

申请日：2023-01-23

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED

Inventor： Christopher Townsend ,  Thineshwaran Gopal Krishnan ,  James Peter Drummond Downing ,  Kevin Channon

IPC: G01S7/481 ,  G01J1/44 ,  G01S17/10 ,  G02B27/30 ,  H01S5/42 ,  H01S5/02253

CPC classification number: G01S7/4814 ,  G01J1/44 ,  G01S7/4816 ,  G01S17/10 ,  G02B27/30 ,  H01S5/423 ,  H01S5/02253 ,  G01J2001/4466 ,  G01J2001/448

Abstract: An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.

公开(公告)号：US20180358391A1

公开(公告)日：2018-12-13

申请号：US16002816

申请日：2018-06-07

Applicant: ARGO AI, LLC

Inventor： Mark Allen ITZLER ,  Brian PICCIONE ,  Xudong JIANG ,  Krystyna SLOMKOWSKI

IPC: H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44 ,  H01C7/00

CPC classification number: H01L27/1446 ,  G01J1/44 ,  G01J2001/4466 ,  G01J2001/448 ,  H01C7/006 ,  H01L27/14609 ,  H01L31/02027 ,  H01L31/107

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

公开(公告)号：US20180111356A1

公开(公告)日：2018-04-26

申请号：US15737675

申请日：2016-11-14

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Christian EFFERTZ ,  Klaus SCHMALBUCH ,  Dirk WOHLFEIL ,  Detlev DUERKOP ,  Guido SCHWINGES

IPC: B32B17/10 ,  B60Q1/00

CPC classification number: B32B17/10165 ,  B32B17/10036 ,  B32B17/10293 ,  B32B17/10761 ,  B32B17/1077 ,  B32B17/10788 ,  B32B2457/08 ,  B32B2605/00 ,  B60Q1/00 ,  B60Q1/0023 ,  B60Q1/1423 ,  B60Q3/80 ,  B60Q2300/314 ,  B60R16/0237 ,  G01J1/44 ,  G01J2001/446 ,  G01J2001/448 ,  G02F1/0126

Abstract: A vehicle composite pane with an integrated light sensor is presented. The vehicle composite pane includes an outer pane and an inner pane that are bonded to one another via a thermoplastic intermediate layer. A photodiode situated on a circuit board is arranged between the outer pane and the inner pane, wherein the photodiode is a surface-mounted device (SMD) component.

公开(公告)号：US09954124B1

公开(公告)日：2018-04-24

申请号：US15600301

申请日：2017-05-19

Applicant: Evgeny N. Kuznetsov

Inventor： Evgeny N. Kuznetsov

IPC: G01T1/24 ,  H01L31/024 ,  H01L27/144 ,  H01L31/02 ,  H01L31/028 ,  H01L31/107 ,  G01J1/44

CPC classification number: H01L31/024 ,  G01J1/44 ,  G01J2001/444 ,  G01J2001/4466 ,  G01J2001/448 ,  G01T1/244 ,  G01T1/248 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/028 ,  H01L31/107

Abstract: A silicon photomultiplier (SiPM) device is provided with a SiPM matrix and a temperature compensation circuit fabricated on a substrate. The temperature compensation circuit can include a temperature sensor, a bias adjustment circuit and a current source. The current source can provide a current to the temperature sensor and the temperature sensor can provide a temperature dependent signal to the bias adjustment circuit. The bias adjustment circuit can adjust a bias voltage provided to the SiPM matrix in response to the signal from the temperature sensor in order to maintain a predefined overvoltage value at the SiPM matrix.

公开(公告)号：US20170370769A1

公开(公告)日：2017-12-28

申请号：US15682546

申请日：2017-08-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKUYA ASANO ,  YOSHINOBU SATO

IPC: G01J1/42 ,  G01S7/486 ,  G01J1/44 ,  H04N5/378 ,  H01L27/148

CPC classification number: G01J1/4228 ,  G01J1/44 ,  G01J2001/448 ,  G01S7/486 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14843 ,  H01L27/14856 ,  H01L27/14875 ,  H01L27/14887 ,  H04N5/3592 ,  H04N5/378

Abstract: A solid-state image sensor including photoelectric conversion parts having a vertical overflow drain structure is made usable as, for example, a distance measuring sensor with high accuracy. In the solid-state image sensor, a pixel array part is formed in a well region of a second conductive type formed at a surface part of a semiconductor substrate of a first conductive type. In the pixel array part, photoelectric conversion parts each of which converts incident light into signal charges and has the vertical overflow drain structure (VOD) are arranged in a matrix form. Substrate discharge pulse signal φSub for controlling potential of the VOD is applied to a signal terminal. An impurity induced part into which impurity of the first type is induced is formed below a connecting part in the semiconductor substrate.

公开(公告)号：US20170363467A1

公开(公告)日：2017-12-21

申请号：US15617398

申请日：2017-06-08

Applicant: SICK AG

Inventor： Klaus CLEMENS ,  Gottfried HUG ,  Stefan SEITZ

IPC: G01J1/46 ,  H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44

CPC classification number: G01J1/46 ,  G01J1/44 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2001/448 ,  H01L27/1446 ,  H01L31/02027

Abstract: A light receiver (50) is provided having a plurality of avalanche photodiode elements (10) that are each biased by a bias above a breakdown voltage and that are thus operated in a Geiger mode to trigger a Geiger current on light reception, wherein the avalanche photodiode elements (10) have a first connector (20, 22, 28a-b) and a second connector (20, 22, 28a-b); and wherein a first signal tapping circuit (12) for reading out the avalanche photodiode elements is connected to one of the connectors (20, 22, 28a-b). In this respect, a second signal tapping circuit (12) for reading out the avalanche photodiode elements (10) is connected to the other connector (20, 22, 28a-b).

公开(公告)号：US09813644B1

公开(公告)日：2017-11-07

申请号：US14744779

申请日：2015-06-19

Applicant: LOCKHEED MARTIN CORPORATION

Inventor： Paul E. Jackson ,  Clara R. Baleine ,  Christopher P. Voita

IPC: G01J1/04 ,  H04N5/33 ,  G01J1/42 ,  G01J1/44

CPC classification number: H04N5/33 ,  G01J1/0407 ,  G01J1/0448 ,  G01J1/4228 ,  G01J1/44 ,  G01J5/046 ,  G01J5/0825 ,  G01J5/0837 ,  G01J5/0896 ,  G01J2001/448 ,  G01J2005/0077 ,  G01J2005/202

Abstract: An infrared imager includes a first optical component, a second optical component, and at least one thin film dielectric layer. The first optical component has multiple first parallel conductors with a first spacing pattern, aligned in a plane perpendicular to an axis. The second optical component has multiple second parallel conductors with a second spacing pattern, aligned in a plane perpendicular to the axis, angularly offset from the first direction. The thin film dielectric layer includes a refractive index change (RIC) material disposed between and in contact with the first and second parallel conductors. The first optical component, second optical component, and at least one thin film dielectric layer form an antenna array configured to detect one or more predetermined infrared wavelengths based on at least one of the first spacing pattern or the second spacing pattern or the angular offset.

公开(公告)号：US20170108375A1

公开(公告)日：2017-04-20

申请号：US15317592

申请日：2015-06-09

Applicant: STC.UNM

Inventor： Steven R.J. BRUECK ,  Alexander NEUMANN ,  Payman ZARKESH-HA

IPC: G01J1/06 ,  G01J3/18 ,  G01J1/44 ,  H01L27/144 ,  G02B6/124 ,  H01L31/103 ,  H01L31/02 ,  H01L31/0216 ,  G02B6/122 ,  G02B6/12 ,  G01J3/28 ,  H01L31/0232

CPC classification number: G01J1/06 ,  G01J1/44 ,  G01J3/0218 ,  G01J3/0259 ,  G01J3/18 ,  G01J3/1895 ,  G01J3/2803 ,  G01J2001/448 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/124 ,  G02B2006/12061 ,  G02B2006/12107 ,  G02B2006/12138 ,  H01L27/1446 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/103

Abstract: A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.