TRANSACTIONAL MULTI-VERSION CONTROL ENABLED UPDATE OF CACHED GRAPH INDICES

    公开(公告)号:US20230185714A1

    公开(公告)日:2023-06-15

    申请号:US17547686

    申请日:2021-12-10

    Applicant: SAP SE

    CPC classification number: G06F12/0802 G06F16/9024 G06F2212/60

    Abstract: A method may include accessing a cache storing a graph index corresponding to a graph data in response to a transaction operating on the graph data. A cache miss triggered by a change to the underlying graph data may be detected. In response to detecting the cache miss, the graph index may be updated by at least replaying or rewinding one or more other changes made to the graph data by one or more other transactions between a first time of the transaction and a second time of a current version of the graph index in the cache. The graph index may be updated to avoid a full rebuild of the graph index. The transaction may be executed based on the updated graph index. Related systems and computer program products are also provided.

    Ghost list cache eviction
    93.
    发明授权

    公开(公告)号:US11669449B1

    公开(公告)日:2023-06-06

    申请号:US17457000

    申请日:2021-11-30

    CPC classification number: G06F12/0802 G06F2212/60

    Abstract: One example method includes a cache eviction operation. Entries in a cache are maintained in an entry list that includes a recent list, a recent ghost list, a frequent list, and a frequent ghost list. When an eviction operation is initiated or triggered, timestamps of last access for the entries in the entry list are adjusted by corresponding adjustment values. Candidate entries for eviction are identified based on the adjusted timestamps of last access. At least some of the candidates are evicted from the cache.

    Memory access gate
    94.
    发明授权

    公开(公告)号:US11657185B2

    公开(公告)日:2023-05-23

    申请号:US17559484

    申请日:2021-12-22

    CPC classification number: G06F21/74 G06F12/0802 G06F12/14 G06F21/30

    Abstract: Methods, systems, and devices for a memory access gate are described. A memory device may include a controller, memory dice, and a pad for receiving an externally provided control signal, such as a chip enable signal. The memory device may include a switching component for selecting the externally provided control signal or an internally generated control signal. The controller may provide the selected control signal to a memory die. The memory device may determine whether it is operating in a first mode or a second mode, and select the externally provided control signal or the internally generated control signal based on the determination. The first mode may be a diagnostic mode in some cases. The controller may include a secure register whose value may impact or control the switching. An authenticated host device may direct the controller to write the value to the secure register.

    PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME

    公开(公告)号:US20230143829A1

    公开(公告)日:2023-05-11

    申请号:US17965004

    申请日:2022-10-13

    CPC classification number: G11C16/24 G06F12/0802 G11C16/0483

    Abstract: A memory device includes a memory cell array and a page buffer circuit, wherein the page buffer circuit includes page buffer units including upper page buffer units and lower page buffer units and cache units arranged between the upper page buffer unit and the lower page buffer units. The cache units include upper cache units and lower cache units. Each page buffer unit includes a sensing node and a pass transistor. The upper cache units share a first combined sensing node, and, the lower cache units share a second combined sensing node. In a data transmission period, sensing nodes respectively included the page buffer units are electrically connected to one another through serial connections of the pass transistors respectively included in the page buffer units.

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