公开(公告)号：US20120153251A1

公开(公告)日：2012-06-21

申请号：US13353091

申请日：2012-01-18

Applicant: Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

Inventor： Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

IPC: H01L29/06 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L31/035227 ,  H01L31/02167 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y10S977/762

Abstract: Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.

Abstract translation: 本公开的另一方面涉及包括具有顶表面和底表面的基底的装置; 具有基底和顶表面的纳米线阵列，所述基底接触所述基底的顶表面; 接触结构包括与衬底相同的材料，其具有适于形成电接触的尺寸的非纳米结构化表面，位于与硅纳米线阵列相同的衬底侧; 其中所述接触结构被掺杂有比所述纳米线阵列更大的杂质浓度，由此形成选择性发射极。

公开(公告)号：US20120153250A1

公开(公告)日：2012-06-21

申请号：US13353087

申请日：2012-01-18

Applicant: Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

Inventor： Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

IPC: H01L31/0352

CPC classification number: H01L31/035227 ,  H01L31/02167 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y10S977/762

Abstract: In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.

Abstract translation: 一方面，本发明涉及包括硅衬底的器件，其中衬底表面的至少一部分可以是硅纳米线阵列; 以及覆盖硅纳米线阵列的氧化铝层。 在一些实施例中，该装置可以是太阳能电池。 在一些实施例中，该装置可以是p-n结。 在一些实施例中，p-n结可以位于纳米线阵列的底表面下方。

公开(公告)号：US20120145880A1

公开(公告)日：2012-06-14

申请号：US12967880

申请日：2010-12-14

Applicant: Munib WOBER

Inventor： Munib WOBER

IPC: H01L31/0352 ,  H01L31/18 ,  H01L27/146 ,  B82Y40/00 ,  B82Y99/00

CPC classification number: H01L31/035227 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  G02B6/107 ,  G02B6/4298 ,  H01L27/14601 ,  H01L27/14607 ,  Y10S977/954

Abstract: An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.

Abstract translation: 一种图像传感器，包括基板和其上的一个或多个像素。 像素在其中具有子像素，其中包含对不同颜色的光敏感的纳米线。 纳米线用于将其敏感的颜色的光转换成电信号。

公开(公告)号：US20120145230A1

公开(公告)日：2012-06-14

申请号：US13390530

申请日：2010-07-16

Applicant: Kazushi Hiraoka ,  Iwao Sugimoto ,  Toshio Takiya ,  Kouji Takanabe

Inventor： Kazushi Hiraoka ,  Iwao Sugimoto ,  Toshio Takiya ,  Kouji Takanabe

IPC: H01L31/02 ,  B82Y99/00

CPC classification number: H01L31/035281 ,  H01L31/0352 ,  H01L31/035227 ,  H01L31/0543 ,  H01L31/0549 ,  Y02E10/52

Abstract: Provided is a solar cell including: a transparent electrode (2) formed as an n-type semiconductor; a plurality of carbon nanotube groups (3) placed in parallel to each other on and perpendicularly to the lower surface of the transparent electrode (2); and metal electrodes (4) placed on the lower surfaces of the carbon nanotube groups (3) opposite to the electrode (2). The diameters of the carbon nanotubes of the carbon nanotube groups (3) in parallel to each other are varied from one side of the electrode (2) to the other side thereof, and the group III atoms are doped into the carbon nanotube groups to form p-type semiconductors.

Abstract translation: 提供一种太阳能电池，包括：形成为n型半导体的透明电极（2） 在所述透明电极（2）的下表面上并且垂直于所述透明电极（2）彼此平行放置的多个碳纳米管组（3）; 以及放置在与电极（2）相对的碳纳米管组（3）的下表面上的金属电极（4）。 碳纳米管组（3）彼此平行的碳纳米管的直径从电极（2）的一侧到另一侧变化，并且将III族原子掺杂到碳纳米管组中以形成 p型半导体。

公开(公告)号：US08158254B2

公开(公告)日：2012-04-17

申请号：US12546804

申请日：2009-08-25

Applicant: Dunwei Wang ,  Sa Zhou

Inventor： Dunwei Wang ,  Sa Zhou

IPC: H01B5/00 ,  H05K3/00 ,  B05D5/12

CPC classification number: C01B33/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L29/413 ,  H01L31/035227 ,  H01M4/1395 ,  H01M4/386 ,  Y10T428/2913

Abstract: The embodiments disclosed herein relate to the fabrication of complex two-dimensional conductive silicide nanostructures, and methods of fabricating the nanostructures. In an embodiment, a conductive silicide includes a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle, the plurality of nanobeams forming a two-dimensional nanostructure having a mesh-like appearance. In an embodiment, a method of fabricating a two-dimensional conductive silicide includes performing chemical vapor deposition, wherein one or more gas or liquid precursor materials carried by a carrier gas stream react to form a nanostructure having a mesh-like appearance and including a plurality of connected and spaced-apart nanobeams linked together at an about 90-degree angle.

Abstract translation: 本文公开的实施例涉及复杂的二维导电硅化物纳米结构的制造，以及制造纳米结构的方法。 在一个实施方案中，导电硅化物包括以约90度角度连接在一起的多个连接和间隔开的纳米片，多个纳米束形成具有网状外观的二维纳米结构。 在一个实施例中，制造二维导电硅化物的方法包括执行化学气相沉积，其中由载气流携带的一种或多种气体或液体前体材料反应以形成具有网状外观的纳米结构，并且包括多个 以约90度的角度连接在一起的连接和间隔开的纳米片。

公开(公告)号：US20120006390A1

公开(公告)日：2012-01-12

申请号：US13065710

申请日：2011-03-28

Applicant: Yijie Huo ,  Anjia Gu ,  James S. Harris, JR. ,  Shu Hu ,  Paul C. Mclntyre

Inventor： Yijie Huo ,  Anjia Gu ,  James S. Harris, JR. ,  Shu Hu ,  Paul C. Mclntyre

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035227 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02546 ,  H01L21/02587 ,  H01L21/02631 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/03925 ,  H01L31/0687 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

Abstract: Solar cells or photodetectors having one or more single-crystal shell layers conformally deposited on Ge nano-wires are provided. This approach can provide higher efficiency and/or reduced material cost compared to conventional planar approaches for multi-junction solar cells having the same thickness of active solar absorption materials. Shell layers deposited on the Ge nano-wires and including pn junctions can be grown such that they end up with single-crystal faceted tips, which can significantly improve optical collection efficiency and can improve the electron collection efficiency because of the high crystal quality.

Abstract translation: 提供具有一个或多个保形地沉积在Ge纳米线上的单晶壳层的太阳能电池或光电探测器。 与具有相同厚度的活性太阳能吸收材料的多结太阳能电池相比，该方法可以提供更高的效率和/或降低的材料成本。 可以生长沉积在Ge纳米线上并包括pn结的壳层，使得它们结束于单晶刻面，这可以显着提高光学收集效率，并且由于高的晶体质量而可以提高电子收集效率。

公开(公告)号：US20110309237A1

公开(公告)日：2011-12-22

申请号：US12910664

申请日：2010-10-22

Applicant: Kwanyong SEO ,  Munib Wober ,  Paul Steinvurzel ,  Ethan Schonbrun ,  Yaping Dan ,  Kenneth B. Crozier

Inventor： Kwanyong SEO ,  Munib Wober ,  Paul Steinvurzel ,  Ethan Schonbrun ,  Yaping Dan ,  Kenneth B. Crozier

IPC: G01J1/42 ,  G02B5/22 ,  F21K99/00 ,  B32B5/08 ,  B05D1/32 ,  B05D5/00 ,  G01J3/51 ,  C23F1/00 ,  B82Y20/00 ,  B82Y15/00 ,  B82Y40/00

CPC classification number: H01L27/14607 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  F21V9/08 ,  G02B5/22 ,  G09F13/00 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14629 ,  H01L27/14692 ,  H01L31/035227 ,  H01L31/107 ,  H01L31/18 ,  Y10S977/762 ,  Y10S977/888 ,  Y10S977/954 ,  Y10T428/24174 ,  Y10T428/24893

Abstract: A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.

Abstract translation: 本文描述了纳米线阵列。 纳米线阵列包括基底和从基底基本垂直延伸的多个纳米线; 其中：每个纳米线沿其整个长度均匀化学化学; 纳米线的折射率是纳米线的包层的折射率的至少两倍。 该纳米线阵列可用作光电检测器，亚微米滤色器，静态彩色显示器或动态彩色显示器。

公开(公告)号：US20110308564A1

公开(公告)日：2011-12-22

申请号：US13092512

申请日：2011-04-22

Applicant: Krzysztof J. Kempa ,  Michael J. Naughton ,  Zhifeng Ren ,  Jakub A. Rybczynski

Inventor： Krzysztof J. Kempa ,  Michael J. Naughton ,  Zhifeng Ren ,  Jakub A. Rybczynski

IPC: H01L31/042 ,  H01L31/18

CPC classification number: B82Y30/00 ,  B01J23/755 ,  B01J37/348 ,  B82Y20/00 ,  H01L31/035227 ,  H01L31/07 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: An apparatus and methods for solar conversion using nanoscale cometal structures are disclosed herein. The cometal structures may be coaxial and coplanar. A nanoscale optics apparatus for use as a solar cell comprises a plurality of nanoscale cometal structures each including a photovoltaic material located between a first electrical conductor and a second electrical conductor. A method of fabricating solar cells comprises preparing a plurality of nanoscale planar structures; coating a plurality of planar surfaces of the plurality of planar structures with a photovoltaic semiconductor while leaving space between the plurality of planar surfaces; and coating the photovoltaic semiconductor with an outer electrical conductor layer, wherein a portion of the outer electrical conductor layer is located between the planar structures to form coplanar structures.

Abstract translation: 本文公开了一种使用纳米级游离体结构的太阳能转换装置和方法。 所述的cometal结构可以是同轴的和共面的。 用作太阳能电池的纳米尺度光学装置包括多个纳米尺度的乙炔结构，每个包括位于第一电导体和第二电导体之间的光伏材料。 制造太阳能电池的方法包括制备多个纳米级平面结构; 用光伏半导体涂覆多个平面结构的多个平面表面，同时留下多个平面之间的空间; 以及用外部电导体层涂覆光电半导体，其中外部电导体层的一部分位于平面结构之间以形成共面结构。

公开(公告)号：US20110204330A1

公开(公告)日：2011-08-25

申请号：US13011352

申请日：2011-01-21

Applicant: Melburne C. LeMieux ,  Ajay Virkar ,  Zhenan Bao

Inventor： Melburne C. LeMieux ,  Ajay Virkar ,  Zhenan Bao

IPC: H01L29/15 ,  H01L21/04 ,  B82Y40/00 ,  B82Y30/00

CPC classification number: H01L29/15 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L31/035227 ,  H01L31/1804 ,  H01L51/0048 ,  H01L51/442 ,  Y02E10/547 ,  Y02E10/549 ,  Y02P70/521

Abstract: Nanostructures are joined using one or more of a variety of materials and approaches. As consistent with various example embodiments, two or more nanostructures are joined at a junction between the nanostructures. The nanostructures may touch or be nearly touching at the junction, and a joining material is deposited and nucleates at the junction to couple the nanostructures together. In various applications, the nucleated joining material facilitates conductivity (thermal and/or electric) between the nanostructures. In some embodiments, the joining material further enhances conductivity of the nanostructures themselves, such as by growing along the nanostructures and/or doping the nanostructures.

Abstract translation: 使用各种材料和方法中的一种或多种连接纳米结构。 与各种示例性实施方案一致，两个或多个纳米结构在纳米结构之间的连接处连接。 纳米结构可以在接合处接触或接近接触，并且连接材料被沉积并在结处成核以将纳米结构耦合在一起。 在各种应用中，有核接合材料有利于纳米结构之间的导电性（热和/或电）。 在一些实施方案中，接合材料进一步增强纳米结构本身的导电性，例如通过沿纳米结构生长和/或掺杂纳米结构。

公开(公告)号：US20110162698A1

公开(公告)日：2011-07-07

申请号：US12926125

申请日：2010-10-27

Applicant: Xianyu Wenxu ,  Yeon-hee Kim ,  Jung-hyun Lee

Inventor： Xianyu Wenxu ,  Yeon-hee Kim ,  Jung-hyun Lee

IPC: H01L31/0256 ,  H01L31/18 ,  H01L31/0224 ,  B82Y30/00

CPC classification number: B82Y30/00 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Solar cells and methods of manufacturing the same, the solar cells include a plurality of nanowire heterostructures, wherein each of the plurality of nanowire heterostructures includes a nanowire including at least one p-type nanowire layer and at least one n-type nanowire layer, and a semiconductor material layer disposed on the nanowire. The semiconductor material layer constitutes a p-n junction with the p-type or n-type nanowire layer. The semiconductor material layer includes at least one of the p-type material layer and the n-type material layer.

Abstract translation: 太阳能电池及其制造方法，太阳能电池包括多个纳米线异质结构，其中，所述多个纳米线异质结构中的每一个都包括包含至少一个p型纳米线层和至少一个n型纳米线层的纳米线，以及 设置在纳米线上的半导体材料层。 半导体材料层与p型或n型纳米线层构成p-n结。 半导体材料层包括p型材料层和n型材料层中的至少一种。