Semiconductor laser device
    91.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号:US08571084B2

    公开(公告)日:2013-10-29

    申请号:US12671550

    申请日:2008-08-01

    IPC分类号: H01S5/0625 H01S5/40 H01S3/082

    摘要: The present invention is directed to a semiconductor laser device comprising a first resonator section for resonating an optical resonator signal for providing an optical output signal at an output of said laser device, wherein said first resonator section is arranged for selectively resonating at a plurality of discrete output wavelengths, and wherein said laser device further comprises a second resonator section operatively connected to said first resonator section, said second resonator section being arranged for providing an optical feedback signal at a feedback wavelength to said first resonator section for locking said first resonator section into resonating at a selected output wavelength of said discrete output wavelengths, which selected output wavelength corresponds to said feedback wavelength for providing said optical output signal.

    摘要翻译: 本发明涉及一种半导体激光器件,其包括:第一谐振器部分,用于谐振用于在所述激光器件的输出处提供光输出信号的光谐振器信号,其中所述第一谐振器部分布置成以多个离散的方式选择性谐振 输出波长,并且其中所述激光装置还包括可操作地连接到所述第一谐振器部分的第二谐振器部分,所述第二谐振器部分被布置成将反馈波长的光反馈信号提供给所述第一谐振器部分,用于将所述第一谐振器部分锁定 在所述离散输出波长的选定输出波长处谐振,所选择的输出波长对应于用于提供所述光输出信号的所述反馈波长。

    Semiconductor laser device and circuit for and method of driving same
    92.
    发明授权
    Semiconductor laser device and circuit for and method of driving same 有权
    半导体激光器件及其驱动电路及其驱动方法

    公开(公告)号:US08265112B2

    公开(公告)日:2012-09-11

    申请号:US12748357

    申请日:2010-03-26

    IPC分类号: H01S3/00 H01S5/00

    摘要: A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.

    摘要翻译: 直接驱动的激光器包括多个触点,其中至少一个触点用于将电流注入到激光器中,使得激光器至少达到激光阈值和用于向激光器提供数据信号的触点中的至少一个。 在一些实施例中,差分数据信号被有效地提供给激光器的前部和后部,而激光阈值电流被提供给激光器的中心部分。

    Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser
    93.
    发明授权
    Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser 失效
    半导体光学元件,使用半导体光学元件的半导体激光器,以及使用该半导体激光器的光学应答器

    公开(公告)号:US08184671B2

    公开(公告)日:2012-05-22

    申请号:US11992980

    申请日:2007-10-09

    申请人: Hiroshi Mori

    发明人: Hiroshi Mori

    IPC分类号: H01S5/00 H01S3/10

    摘要: A semiconductor optical element includes an n-type substrate, an n-type clad layer formed upward of the n-type substrate, a p-type clad layer formed upward of the n-type substrate, a guide layer, formed between the p-type clad layer and the n-type clad layer, for waveguiding a light, first and second electrodes respectively formed on the bottom surface of the n-type substrate and the upper surface of the p-type clad layer, and a plurality of electric current regulating members provided in the vicinity of the guide layer and regularly arranged along a light waveguide direction in the guide layer. The plurality of electric current regulating members generate an even distribution of a refractive index in the guide layer along the light waveguide direction in the guide layer. The guide layer reflects light with a wavelength which is determined in accordance with the even refractive index distribution.

    摘要翻译: 半导体光学元件包括n型衬底,由n型衬底向上形成的n型覆盖层,由n型衬底向上形成的p型覆盖层,形成在p型衬底之间的引导层, 型覆盖层和n型覆盖层,用于波导分别形成在n型衬底的底表面和p型覆盖层的上表面上的光,第一和第二电极以及多个电流 调节构件设置在引导层附近,并且沿导光层中的光波导方向规则排列。 多个电流调节部件在引导层中沿引导层的光波导方向产生导向层中的折射率的均匀分布。 引导层反射具有根据均匀折射率分布确定的波长的光。

    Optical device and method for manufacturing the same
    94.
    发明授权
    Optical device and method for manufacturing the same 有权
    光学装置及其制造方法

    公开(公告)号:US07899283B2

    公开(公告)日:2011-03-01

    申请号:US12868163

    申请日:2010-08-25

    IPC分类号: G02B6/34

    摘要: An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided.

    摘要翻译: 一种光学装置,包括:光波导; 以及沿着光波导设置的多个衍射光栅层,其中每个衍射光栅层包括衍射光栅,每个衍射光栅包括不连续的第一半导体层和埋入第一半导体层的第二半导体层,第一和第二半导体 具有不同折射率的层,多个衍射光栅层包括至少两个衍射光栅层相对于设置有衍射光栅的区域的长度而彼此不同,并且多个衍射光栅层的重叠区域中的衍射光栅 的衍射光栅层具有相同的相位和周期。

    ELECTRO-ABSORPTION MODULATED LASER (EML) ASSEMBLY HAVING A 1/4 WAVELENGTH PHASE SHIFT LOCATED IN THE FORWARD PORTION OF THE DISTRIBUTED FEEDBACK (DFB) OF THE EML ASSEMBLY, AND A METHOD
    95.
    发明申请
    ELECTRO-ABSORPTION MODULATED LASER (EML) ASSEMBLY HAVING A 1/4 WAVELENGTH PHASE SHIFT LOCATED IN THE FORWARD PORTION OF THE DISTRIBUTED FEEDBACK (DFB) OF THE EML ASSEMBLY, AND A METHOD 审中-公开
    具有位于EML组件的分布式反馈(DFB)的前向部分中的1/4波长相位移动的电吸收式调制激光器(EML)组件,以及方法

    公开(公告)号:US20100290489A1

    公开(公告)日:2010-11-18

    申请号:US12466439

    申请日:2009-05-15

    IPC分类号: H01S3/10 H01S3/08

    摘要: An EML assembly is provided that has and EAM and a DFB, with the DFB having an asymmetric ¼ wavelength phase shift positioned at a location that is in front of the center of the periodic structure of the DFB. In addition, the EML assembly has a tilted or bent waveguide that reduces reflections occurring at the front end facet, thereby enabling the EAM to produce a relatively high POUT level while also achieving reduced chirp and high single-mode yield in the DFB. By providing the EML assembly with a tilted or bent waveguide, the reflections at the front end facet are reduced without having to use an AR coating on the front end facet that has an extremely low reflectivity. By avoiding the need to use an AR coating on the front end facet that has an extremely low reflectivity, the AR coating that is used on the front end facet can be made using standard sputter deposition techniques to enable higher manufacturing yields to be achieved.

    摘要翻译: 提供了一种EML组件,其具有EAM和DFB,其中DFB具有位于DFB的周期性结构的中心前方的位置处的不对称的1/4波长相移。 此外,EML组件具有倾斜或弯曲的波导,其减小在前端小面处发生的反射,从而使得EAM能够产生相对较高的POUT电平,同时还实现DFB中的啁啾和高单模产量的降低。 通过为EML组件提供倾斜或弯曲的波导,前端小面处的反射减小,而不必在具有极低反射率的前端小面上使用AR涂层。 通过避免在具有极低反射率的前端小面上使用AR涂层的需要,可以使用标准溅射沉积技术制造用于前端小面的AR涂层,以实现更高的制造成品率。

    SEMICONDUCTOR LASER DEVICE AND CIRCUIT FOR AND METHOD OF DRIVING SAME
    97.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND CIRCUIT FOR AND METHOD OF DRIVING SAME 有权
    半导体激光器件及其驱动电路及其驱动方法

    公开(公告)号:US20100260220A1

    公开(公告)日:2010-10-14

    申请号:US12748357

    申请日:2010-03-26

    IPC分类号: H01S5/06 H01S5/30

    摘要: A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.

    摘要翻译: 直接驱动的激光器包括多个触点,其中至少一个触点用于将电流注入到激光器中,使得激光器至少达到激光阈值和用于向激光器提供数据信号的触点中的至少一个。 在一些实施例中,差分数据信号被有效地提供给激光器的前部和后部,而激光阈值电流被提供给激光器的中心部分。

    Semiconductor optical element
    98.
    发明授权
    Semiconductor optical element 失效
    半导体光学元件

    公开(公告)号:US07706422B2

    公开(公告)日:2010-04-27

    申请号:US11626507

    申请日:2007-01-24

    申请人: Kazuhisa Takagi

    发明人: Kazuhisa Takagi

    IPC分类号: H01S5/00

    摘要: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

    摘要翻译: 半导体光学元件具有包括量子点的有源层。 光子密度相对较高的有源层部分中的谐振器方向的量子点的密度相对于有源层的一部分中的光子的密度相对较低的部分的量子点的密度而增加 。

    Laser device, laser module, semiconductor laser and fabrication method of semiconductor laser
    99.
    发明授权
    Laser device, laser module, semiconductor laser and fabrication method of semiconductor laser 有权
    激光器件,激光器模块,半导体激光器和半导体激光器的制造方法

    公开(公告)号:US07620093B2

    公开(公告)日:2009-11-17

    申请号:US11616530

    申请日:2006-12-27

    申请人: Takuya Fujii

    发明人: Takuya Fujii

    IPC分类号: H01S3/08

    摘要: A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region.

    摘要翻译: 半导体激光器具有第一和第二衍射光栅区域。 第一衍射光栅区具有段,具有增益,并且具有反射光谱的第一离散峰。 第二衍射光栅区域具有彼此组合的段,并且具有反射光谱的第二离散峰。 每个段具有衍射光栅和空间区域。 衍射光栅的间距基本相等。 第二离散峰的波长间隔与第一离散峰的波长间隔不同。 当第一离散峰和第二离散峰的给定峰之间的关系发生变化时,第一离散峰的给定峰的一部分与第二离散峰的一部分重叠。 位于第一衍射光栅区域或第二衍射光栅区域中的第一段具有比第一衍射光栅区域和第二衍射光栅区域的其他区段更短或更长的光学长度,其中衍射的间距的一半的奇数倍 第一衍射光栅区域的光栅。

    SEMICONDUCTOR LASER AND SEMICONDUCTOR OPTICAL INTEGRATED DEVICE
    100.
    发明申请
    SEMICONDUCTOR LASER AND SEMICONDUCTOR OPTICAL INTEGRATED DEVICE 有权
    半导体激光器和半导体光学集成器件

    公开(公告)号:US20090059988A1

    公开(公告)日:2009-03-05

    申请号:US12199099

    申请日:2008-08-27

    IPC分类号: H01S5/125

    摘要: A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and provided along the optical waveguide over the overall length of the optical waveguide on the semiconductor substrate. The semiconductor laser is configured such that a Bragg wavelength in a region in the proximity of each of the opposite ends of the optical waveguide is longer than a Bragg wavelength in a region in the proximity of the phase shift in a state in which current injection is not performed for the optical waveguide.

    摘要翻译: 半导体激光器包括形成在半导体衬底上并能够通过电流注入产生增益的光波导,以及具有相移的衍射光栅,并且沿着光波导在半导体衬底上的光波导的整个长度上提供。 半导体激光器被配置为使得在光波导的每个相对端附近的区域中的布拉格波长比在当前注入的状态下的相移附近的区域中的布拉格波长长 不对光波导执行。