摘要:
The present invention is directed to a semiconductor laser device comprising a first resonator section for resonating an optical resonator signal for providing an optical output signal at an output of said laser device, wherein said first resonator section is arranged for selectively resonating at a plurality of discrete output wavelengths, and wherein said laser device further comprises a second resonator section operatively connected to said first resonator section, said second resonator section being arranged for providing an optical feedback signal at a feedback wavelength to said first resonator section for locking said first resonator section into resonating at a selected output wavelength of said discrete output wavelengths, which selected output wavelength corresponds to said feedback wavelength for providing said optical output signal.
摘要:
A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.
摘要:
A semiconductor optical element includes an n-type substrate, an n-type clad layer formed upward of the n-type substrate, a p-type clad layer formed upward of the n-type substrate, a guide layer, formed between the p-type clad layer and the n-type clad layer, for waveguiding a light, first and second electrodes respectively formed on the bottom surface of the n-type substrate and the upper surface of the p-type clad layer, and a plurality of electric current regulating members provided in the vicinity of the guide layer and regularly arranged along a light waveguide direction in the guide layer. The plurality of electric current regulating members generate an even distribution of a refractive index in the guide layer along the light waveguide direction in the guide layer. The guide layer reflects light with a wavelength which is determined in accordance with the even refractive index distribution.
摘要:
An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided.
摘要:
An EML assembly is provided that has and EAM and a DFB, with the DFB having an asymmetric ¼ wavelength phase shift positioned at a location that is in front of the center of the periodic structure of the DFB. In addition, the EML assembly has a tilted or bent waveguide that reduces reflections occurring at the front end facet, thereby enabling the EAM to produce a relatively high POUT level while also achieving reduced chirp and high single-mode yield in the DFB. By providing the EML assembly with a tilted or bent waveguide, the reflections at the front end facet are reduced without having to use an AR coating on the front end facet that has an extremely low reflectivity. By avoiding the need to use an AR coating on the front end facet that has an extremely low reflectivity, the AR coating that is used on the front end facet can be made using standard sputter deposition techniques to enable higher manufacturing yields to be achieved.
摘要:
A semiconductor laser includes an active region including an active layer, and a diffraction grating and a phase shift which determine an oscillation wavelength, and a distributed reflector region including a light guide layer and a refection diffraction grating. The distributed reflector region has an effective diffraction grating period which varies along a direction of a cavity.
摘要:
A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.
摘要:
A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.
摘要:
A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region.
摘要:
A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and provided along the optical waveguide over the overall length of the optical waveguide on the semiconductor substrate. The semiconductor laser is configured such that a Bragg wavelength in a region in the proximity of each of the opposite ends of the optical waveguide is longer than a Bragg wavelength in a region in the proximity of the phase shift in a state in which current injection is not performed for the optical waveguide.