公开(公告)号：US20180323334A1

公开(公告)日：2018-11-08

申请号：US16032531

申请日：2018-07-11

申请人： First Solar, Inc.

发明人： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC分类号： H01L31/18 ,  H01L31/073 ,  H01L31/065 ,  H01L31/0224 ,  H01L31/0296

CPC分类号： H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

摘要： Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US20170345962A1

公开(公告)日：2017-11-30

申请号：US15680426

申请日：2017-08-18

申请人： EpiWorks, Inc.

发明人： David Ahmari ,  Swee Lim ,  Shiva Rai ,  David Forbes

IPC分类号： H01L31/18 ,  H01L31/0336 ,  H01L31/065 ,  H01L31/0735 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/076

CPC分类号： H01L31/18 ,  H01L31/0336 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/076 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing process and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

公开(公告)号：US09722120B2

公开(公告)日：2017-08-01

申请号：US14853463

申请日：2015-09-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Talia S. Gershon ,  Marinus J. P. Hopstaken ,  Jeehwan Kim ,  Yun Seog Lee

IPC分类号： H01L31/032 ,  H01L31/0368 ,  H01L31/065 ,  H01L31/18

CPC分类号： H01L31/065 ,  H01L31/022466 ,  H01L31/0326 ,  H01L31/0368 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/50

摘要： A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.

公开(公告)号：US09685580B2

公开(公告)日：2017-06-20

申请号：US15265374

申请日：2016-09-14

申请人： Sandia Corporation ,  The Board of Regents of the University of Texas System

发明人： Jose Luis Cruz-Campa ,  Xiaowang Zhou ,  David Zubia

IPC分类号： H01L31/18 ,  H01L31/0725 ,  H01L31/0352 ,  H01L31/06 ,  H01L31/065 ,  H01L31/073

CPC分类号： H01L31/1832 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/06 ,  H01L31/065 ,  H01L31/0725 ,  H01L31/073 ,  Y02E10/543

摘要： A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

公开(公告)号：US20170084770A1

公开(公告)日：2017-03-23

申请号：US15365742

申请日：2016-11-30

申请人： Paul Loscutoff ,  Gabriel Harley

发明人： Paul Loscutoff ,  Gabriel Harley

IPC分类号： H01L31/065 ,  H01L31/0224

CPC分类号： H01L31/065 ,  H01L21/2225 ,  H01L21/228 ,  H01L21/268 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter.

公开(公告)号：US20170077338A1

公开(公告)日：2017-03-16

申请号：US15342618

申请日：2016-11-03

申请人： International Business Machines Corporation

发明人： Liang-Yi Chang ,  Talia S. Gershon ,  Richard A. Haight ,  Yun Seog Lee

IPC分类号： H01L31/065 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/0392

CPC分类号： H01L31/065 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02505 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02628 ,  H01L21/02631 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/0326 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/0749 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/50

摘要： A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.

摘要翻译： 提供了一种混合气相 - 溶液相CZT（S，Se）生长技术。 一方面，在基材上形成kesterite吸收体材料的方法包括以下步骤：使用气相沉积工艺在基材上沉积第一泡沫材料层，其中所述第一Kesterite材料包括Cu，Zn，Sn， 和S和Se中的至少一个; 退火第一泡沸石材料以使第一泡壳材料结晶; 以及使用溶液相沉积工艺在与所述基材相对的所述第一kesterite材料的一侧上沉积第二Kesterite材料层，其中所述第二Kesterite材料包括Cu，Zn，Sn和S和Se中的至少一种，其中所述 第一凯斯特石料和第二泡壳石材料在基材上形成吸收材料的多层叠层。 还提供了一种光电器件及其形成方法。

公开(公告)号：US20160099368A1

公开(公告)日：2016-04-07

申请号：US14890603

申请日：2014-05-13

申请人： SEGTON ADVANCED TECHNOLOGY SAS

发明人： ZBIGNIEW KUZNICKI

IPC分类号： H01L31/065 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/065 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/036 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very-high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron beam irradiation and suitable thermal treatment and is industrially easily available.

摘要翻译： 本发明涉及在硅材料内纳米结构形成的基本纳米级单元和实现它们的制造过程。 通过在晶体基本单元之外的两个Si原子的有限位移产生每个基本纳米尺度单元。 结晶物质的局部纳米尺度变换通过将其特定的物理效应聚焦在特定的物理效应上而获得不寻常的功能，这是为太阳能光谱转换为电而优化的高度有用的另外一组电子能级。 经调整的能量组允许半导体中的低能量二次电子产生，优选硅材料，特别用于非常高效率的全硅光电转换器。 基于局部能量沉积（如离子注入或电子束照射）和合适的热处理在半导体材料中产生这种变换的制造工艺在工业上容易获得。

公开(公告)号：US20160056322A1

公开(公告)日：2016-02-25

申请号：US14830480

申请日：2015-08-19

申请人： LG ELECTRONICS INC.

发明人： Youngsung YANG ,  Junghoon CHOI ,  Chungyi KIM

IPC分类号： H01L31/068 ,  H01L31/0352 ,  H01L31/065 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035209 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

摘要： A solar cell is discussed, and the solar cell includes: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; a buffer layer on the tunneling layer, wherein the buffer layer is a separate layer from the tunneling layer and includes an intrinsic buffer portion, and wherein at least one of a material, a composition and a crystalline structure of the buffer layer is different from those of the tunneling layer; a conductive type region on the tunneling layer, and including a first conductive type region having a first conductive type and a second conductive type region having a second conductive type; and an electrode connected to the conductive type region. The buffer layer is positioned adjacent to the tunneling layer and is apart from the electrode.

摘要翻译： 讨论太阳能电池，太阳能电池包括：半导体衬底; 在所述半导体衬底的表面上的隧穿层; 在所述隧道层上的缓冲层，其中所述缓冲层是与所述隧穿层分离的层，并且包括本征缓冲部分，并且其中所述缓冲层的材料，组成和晶体结构中的至少一种与所述缓冲层的材料， 的隧道层; 在隧穿层上的导电型区域，并且包括具有第一导电类型的第一导电类型区域和具有第二导电类型的第二导电类型区域; 以及连接到导电类型区域的电极。 缓冲层位于隧道层附近并与电极分开。

公开(公告)号：US20150380598A1

公开(公告)日：2015-12-31

申请号：US14318374

申请日：2014-06-27

申请人： Paul Loscutoff ,  Gabriel Harley

发明人： Paul Loscutoff ,  Gabriel Harley

IPC分类号： H01L31/18 ,  H01L31/065

CPC分类号： H01L31/065 ,  H01L21/2225 ,  H01L21/228 ,  H01L21/268 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A system and method of patterning dopants of opposite polarity to form a solar cell is described. Two dopant films are deposited on a substrate. A laser is used to pattern the N-type dopant, by mixing the two dopant films into a single film with an exposure to the laser and/or drive the N-type dopant into the substrate to form an N-type emitter. A thermal process drives the P-type dopant from the P-type dopant film to form P-type emitters and further drives the N-type dopant from the single film to either form or further drive the N-type emitter.

摘要翻译： 描述了以相反极性构图掺杂剂以形成太阳能电池的系统和方法。 在衬底上沉积两个掺杂剂膜。 使用激光来对N型掺杂剂进行图案化，通过将两种掺杂剂膜混合成单一膜并暴露于激光器和/或将N型掺杂剂驱动到衬底中以形成N型发射体。 热处理从P型掺杂剂膜驱动P型掺杂剂以形成P型发射体，并进一步从单一膜驱动N型掺杂剂以形成或进一步驱动N型发射极。

公开(公告)号：US20150357501A1

公开(公告)日：2015-12-10

申请号：US14828197

申请日：2015-08-17

申请人： SolAero Technologies Corp.

发明人： Daniel DERKACS ,  Mark STAN

IPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/065

CPC分类号： H01L31/06875 ,  H01L31/03046 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

摘要： A multijunction solar cell which includes: an upper first solar subcell having a first band gap; a second solar subcell adjacent to said upper first solar subcell and having a second band gap smaller than said first band gap; a third solar subcell adjacent to said second solar subcell and having a third band gap smaller than said second band gap; a graded interlayer adjacent to said third solar subcell, said graded interlayer having a fourth band gap greater than said third band gap; and a lower fourth solar subcell adjacent to said graded interlayer, said lower fourth solar subcell having a fifth band gap smaller than said third band gap such that said lower fourth solar subcell is lattice mismatched with respect to said third solar subcell.

摘要翻译： 一种多结太阳能电池，包括：具有第一带隙的上部第一太阳能子电池; 与所述上部第一太阳能子电池相邻并且具有小于所述第一带隙的第二带隙的第二太阳能子电池; 与所述第二太阳能子电池相邻并且具有小于所述第二带隙的第三带隙的第三太阳能子电池; 与所述第三太阳能子电池相邻的渐变中间层，所述渐变中间层具有大于所述第三带隙的第四带隙; 以及与所述梯度中间层相邻的较低的第四太阳能子电池，所述下部第四太阳能子电池具有小于所述第三带隙的第五带隙，使得所述下部第四太阳能子电池相对于所述第三太阳能子电池晶格失配。