公开(公告)号：US20160042924A1

公开(公告)日：2016-02-11

申请号：US14820440

申请日：2015-08-06

Applicant: Applied Materials, Inc.

Inventor： Sung Je Kim ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  C23C14/08

CPC classification number: H01J37/32559 ,  C23C14/081 ,  C23C14/083 ,  C23C14/28 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449

Abstract: A faceplate or a selectivity modulation device (SMD) for a plasma generation chamber has a plasma resistant ceramic coating on a surface of the faceplate or SMD, wherein the plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%.

Abstract translation: 用于等离子体发生室的面板或选择性调制装置（SMD）在面板或SMD的表面上具有耐等离子体陶瓷涂层，其中耐等离子体陶瓷涂层包括小于约30微米的厚度，孔隙率较小 超过1％，厚度不均匀度小于4％。

公开(公告)号：US20150241362A1

公开(公告)日：2015-08-27

申请号：US14628733

申请日：2015-02-23

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Yufei Zhu ,  Saurabh Garg ,  Soonam Park ,  Dmitry Lubomirsky

IPC: G01N22/00

CPC classification number: G01N22/00

Abstract: A test device for testing an electrical property of a chamber component, such as a ceramic ring, includes an outer conductor and an inner conductor disposed within and electrically isolated from the outer conductor. The outer conductor has a base, a top, and an interior sidewall disposed between the base and the top. The inner conductor has a top portion having a first diameter and a bottom portion having a second diameter, in which the second diameter is greater than the first diameter. A sample area is defined between the base of the outer conductor and the bottom portion of the inner conductor, and is configured to receive a chamber component. The electrical property of the chamber component and wherein an electrical property of the chamber component is measurable based on application of a signal to at least one of the outer conductor or the inner conductor.

Abstract translation: 用于测试诸如陶瓷环的腔室部件的电性能的测试装置包括外部导体和布置在外部导体中并与外部导体电隔离的内部导体。 外部导体具有设置在基部和顶部之间的基部，顶部和内部侧壁。 内部导体具有具有第一直径的顶部部分和具有第二直径的底部部分，其中第二直径大于第一直径部分。 样品区域被限定在外部导体的底部和内部导体的底部之间，并被构造成容纳腔室部件。 基于将信号施加到外部导体或内部导体中的至少一个可以测量室部件的电性能并且其中室部件的电特性是可测量的。

公开(公告)号：US12146219B2

公开(公告)日：2024-11-19

申请号：US16745141

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib M. Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  C23C16/452 ,  H01J37/32

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US12009228B2

公开(公告)日：2024-06-11

申请号：US18175104

申请日：2023-02-27

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/687 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/31116 ,  H01L21/31138

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

公开(公告)号：US11915950B2

公开(公告)日：2024-02-27

申请号：US17583935

申请日：2022-01-25

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/67103 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/002 ,  H01J2237/332

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

公开(公告)号：US11355317B2

公开(公告)日：2022-06-07

申请号：US16218848

申请日：2018-12-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Lance Scudder ,  David Britz ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J37/32 ,  H01L21/67

Abstract: Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.

公开(公告)号：US20220148894A1

公开(公告)日：2022-05-12

申请号：US17583935

申请日：2022-01-25

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

公开(公告)号：US20220093364A1

公开(公告)日：2022-03-24

申请号：US17542781

申请日：2021-12-06

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

公开(公告)号：US11264213B2

公开(公告)日：2022-03-01

申请号：US16511990

申请日：2019-07-15

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/40 ,  H01J37/32 ,  B05B1/00 ,  C23C16/455 ,  C23C16/452 ,  B05B1/18 ,  C23C16/50 ,  H01L21/67

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US11062887B2

公开(公告)日：2021-07-13

申请号：US16132806

申请日：2018-09-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Soonam Park ,  David Benjaminson ,  Xikun Wang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/458 ,  C23C16/455

Abstract: Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.