公开(公告)号：US10600624B2

公开(公告)日：2020-03-24

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Sanjeev Baluja ,  Mayur G. Kulkarni ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Alvin Zhou ,  Amit Kumar Bansal ,  Priyanka Dash ,  Zhijun Jiang ,  Ganesh Balasubramanian ,  Qiang Ma ,  Kaushik Alayavalli ,  Yuxing Zhang ,  Daniel Hwung ,  Shawyon Jafari

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/458

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US08657961B2

公开(公告)日：2014-02-25

申请号：US13856962

申请日：2013-04-04

Applicant: Applied Materials, Inc.

Inventor： Bo Xie ,  Alexandros T. Demos ,  Scott A. Hendrickson ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez

IPC: C25F1/00

CPC classification number: B08B7/0021 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32862

Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.

Abstract translation: 本发明的实施例通常提供用于清洁UV处理室的方法。 在一个实施方案中，该方法包括使含氧气体通过形成在UV透明气体分配喷头中的多个通道流入位于UV透明气体分配喷头和位于热处理室内的基板支架之间的处理区域中， 在包含低压级和高压级的压力方案下将含氧气体暴露于紫外线辐射以产生活性氧自由基，以及从在热处理室中呈现的腔室组分的暴露表面去除不需要的残留物或沉积物 使用活性氧自由基。

公开(公告)号：US12276344B2

公开(公告)日：2025-04-15

申请号：US18212238

申请日：2023-06-21

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: F16K15/02 ,  F16K17/04

Abstract: Variable orifice check valves comprising a flange with a guide pin, spring and movable plate are described. The flange has a body with at least one guide pin opening in the top surface. A guide pin is positioned within the at least one guide pin opening and a spring is positioned around the guide pin. The movable plate has an opening and slides along the guide pins with the spring between the top surface of the flange body and the bottom surface of the movable plate.

公开(公告)号：US20240337318A1

公开(公告)日：2024-10-10

申请号：US18131212

申请日：2023-04-05

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: F16J15/10 ,  C23C16/44 ,  C23C16/455

CPC classification number: F16J15/104 ,  C23C16/4409 ,  C23C16/45544

Abstract: Embodiments of the present disclosure are related to directed to a pressure seal for a process chamber. The pressure seal comprises a bottom portion, a compressible middle portion on the bottom portion, and a top portion on the compressible middle portion. The disclosed pressure seal is configured to reduce pumping time of a process region in an interior volume of a processing chamber compared to a process chamber that does not include a pressure seal. Processing chambers including the disclosed pressure seal are configured to process a semiconductor substrate at high temperatures, such as a temperature of greater than or equal to 350° C. Methods of sealing a processing chamber using the disclosed pressure seal are also described.

公开(公告)号：US12077861B2

公开(公告)日：2024-09-03

申请号：US17025025

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/45544 ,  C23C16/52

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

公开(公告)号：US20240170254A1

公开(公告)日：2024-05-23

申请号：US17991379

申请日：2022-11-21

Applicant: Applied Materials, Inc.

Inventor： Jianming Fu ,  Tza-Jing Gung ,  Sanjeev Baluja ,  Haitao Wang ,  Mandyam Sriram ,  Srinivas Gandikota ,  Steven V. Sansoni

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/509

CPC classification number: H01J37/3211 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/509 ,  H01J37/32715 ,  H01J2237/332

Abstract: Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power source. Some embodiments are directed to processing chambers having a wafer cassette comprising a plurality of platforms, each platform configured to support at least one wafer for processing, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette. In some embodiments, the plurality of platforms have a first set of electrodes having a first polarity and a second set of electrodes having a second polarity, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette.

公开(公告)号：US20240068095A1

公开(公告)日：2024-02-29

申请号：US17897452

申请日：2022-08-29

Applicant: Applied Materials, Inc.

Inventor： Youngki Chang ,  Dhritiman Subha Kashyap ,  Rakesh Ramadas ,  Ashutosh Agarwal ,  Shashidhara Patel H B ,  Muhannad Mustafa ,  Sanjeev Baluja

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45589

Abstract: Gas distribution apparatuses described herein include a mixing plate adjacent a back plate of a showerhead. The mixing plate has a back surface and a front surface defining a thickness of the mixing plate. The mixing plate has a mixing channel comprising a top portion and a bottom portion defining a mixing channel length and at least two gas inlets in fluid communication with the top portion of the mixing channel. The gas distribution apparatus also includes a mixer disposed within the thickness of the mixing plate in the top portion of the mixing channel. The mixer has a top plate and a mixer stem extending from the top plate and a plurality of blades positioned along the mixer stem length. Also provided are processing chambers including the gas distribution apparatuses described herein.

公开(公告)号：US11894257B2

公开(公告)日：2024-02-06

申请号：US16171785

申请日：2018-10-26

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Mandyam Sriram

IPC: H01L21/68 ,  H01L21/687 ,  C23C16/44 ,  C23C16/458 ,  H01L21/67 ,  C23C16/46 ,  H01L21/683 ,  C23C16/455

CPC classification number: H01L21/68785 ,  C23C16/4409 ,  C23C16/4584 ,  C23C16/45525 ,  C23C16/46 ,  H01L21/6719 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68764 ,  H01L21/68771

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

公开(公告)号：US20230407473A1

公开(公告)日：2023-12-21

申请号：US18209026

申请日：2023-06-13

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: C23C16/455

CPC classification number: C23C16/45544

Abstract: Embodiments of the present disclosure are related to directed to a pump liner for a process chamber. The pump liner is aligned with particular components in the process chamber so that there is an upper gap and a lower gap between the pump liner and the particular processing chamber components (e.g., an edge ring). The pump liner advantageously reduces side to side variation in temperature and gas flow based on its alignment with particular components in the process chamber (e.g., the edge ring) and the size of the upper gap and the lower gap. Some embodiments advantageously provide better precursor flow distribution for various process spacing between the showerhead and wafer.

公开(公告)号：US11791190B2

公开(公告)日：2023-10-17

申请号：US17314714

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Mike Murtagh ,  Sanjeev Baluja

IPC: H01L21/683 ,  H02N13/00 ,  G01R27/26 ,  H01L21/67

CPC classification number: H01L21/6833 ,  G01R27/2605 ,  H01L21/67242 ,  H02N13/00

Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.