DETERMINING DATA STATES OF MEMORY CELLS
    101.
    发明申请

    公开(公告)号:US20190066804A1

    公开(公告)日:2019-02-28

    申请号:US16043259

    申请日:2018-07-24

    Abstract: Methods of operating a memory include determining a voltage level of a plurality of voltage levels at which a memory cell is deemed to first activate in response to applying the to a control gate of that memory cell for each memory cell of a plurality of memory cells, determining a plurality of voltage level distributions from numbers of memory cells of a first subset of memory cells deemed to first activate at each voltage level of the plurality of voltage levels, determining a transition between a pair of voltage level distributions for each adjacent pair of voltage level distributions, and assigning a respective data state to each memory cell of a second subset of memory cells responsive to the determined voltage level at which that memory cell is deemed to first activate and respective voltage levels of the transitions for each adjacent pair of voltage level distributions.

    METHODS AND APPARATUS FOR PATTERN MATCHING
    102.
    发明申请

    公开(公告)号:US20180322922A1

    公开(公告)日:2018-11-08

    申请号:US16019650

    申请日:2018-06-27

    CPC classification number: G11C15/046 G11C16/0483 G11C16/10 G11C29/52

    Abstract: Methods include receiving a pattern to be searched in a memory having a plurality of sets of memory elements with each set coupled to a separate data line and corresponding to a same set of bit positions of the pattern. Methods further include receiving a pattern of data to be programmed into a memory, programming a first data state into one memory cell of each cell pair of a plurality of cell pairs of a memory array, and programing a second data state into another memory cell of each cell pair of the plurality of cell pairs for each bit position of the pattern. Memory configured to facilitate such methods include a plurality of cell pairs, each cell pair of the plurality of cell pairs programmed to store a same bit of data corresponding to a particular bit position of a pattern to be searched in the memory.

    Determining data states of memory cells

    公开(公告)号:US10062441B1

    公开(公告)日:2018-08-28

    申请号:US15692154

    申请日:2017-08-31

    Abstract: Methods of operating a memory include determining a respective raw data value for each memory cell of a plurality of memory cells; determining the numbers of memory cells of a first subset of the plurality of memory cells having each raw data value as their respective raw data value; determining a respective raw data values representative of transition between each pair of adjacent data states responsive to the determined numbers of memory cells of the first subset of the plurality of memory cells for each raw data value; and determining a respective data state of the plurality of data states for each memory cell of a second subset of the plurality of memory cells responsive to its respective raw data value and to the determined raw data values representative of the transitions between adjacent data states.

    Memory as a programmable logic device
    108.
    发明授权
    Memory as a programmable logic device 有权
    存储器作为可编程逻辑器件

    公开(公告)号:US09343155B1

    公开(公告)日:2016-05-17

    申请号:US13774636

    申请日:2013-02-22

    CPC classification number: G11C16/10 G11C16/0483 G11C16/26 G11C16/3418

    Abstract: Methods for programming, methods for operating, and memories are disclosed. One such method for programming includes programming a group of memory cells such that a series string of memory cells of the group of memory cells is programmed to provide a logical function responsive to an input minterm whose variables are coupled to respective, associated memory cells.

    Abstract translation: 公开了编程方法,操作方法和存储器。 用于编程的一种这样的方法包括对一组存储器单元进行编程,使得存储器单元组的一系列存储器单元被编程为响应于其变量耦合到相应的存储单元的输入minter来提供逻辑功能。

    ERASING PHYSICAL MEMORY BLOCKS OF NON-VOLATILE MEMORY
    110.
    发明申请
    ERASING PHYSICAL MEMORY BLOCKS OF NON-VOLATILE MEMORY 有权
    擦除非易失性存储器的物理存储块

    公开(公告)号:US20140133226A1

    公开(公告)日:2014-05-15

    申请号:US14159041

    申请日:2014-01-20

    CPC classification number: G11C16/16 G06F12/0246 G06F2212/7202 G11C2211/5641

    Abstract: Apparatus and methods are disclosed, such as those that provide dynamic block allocations in NAND flash memory between single-level cells (SLC) and multi-level cells (MLC) based on characteristics. In one embodiment, a memory controller dynamically switches between programming and/or reprogramming blocks between SLC mode and MLC mode based on the amount of memory available for use. When memory usage is low, SLC mode is used. When memory usage is high, MLC mode is used. Dynamic block allocation allows a memory controller to obtain the performance and reliability benefits of SLC mode while retaining the space saving benefits of MLC mode.

    Abstract translation: 公开了装置和方法,例如基于特性在单级单元(SLC)和多级单元(MLC)之间的NAND闪速存储器中提供动态块分配的装置和方法。 在一个实施例中,存储器控制器基于可用于使用的存储器的量,在SLC模式和MLC模式之间的编程和/或重新编程块之间动态切换。 当内存使用量低时,使用SLC模式。 当内存使用率高时,使用MLC模式。 动态块分配允许内存控制器获得SLC模式的性能和可靠性优势,同时保持MLC模式的节省空间的优势。

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