公开(公告)号：US5580800A

公开(公告)日：1996-12-03

申请号：US213060

申请日：1994-03-15

申请人： Hongyong Zhang ,  Yasuhiko Takemura ,  Hideki Uochi ,  Itaru Koyama ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Hongyong Zhang ,  Yasuhiko Takemura ,  Hideki Uochi ,  Itaru Koyama ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/49 ,  H01L21/306

CPC分类号： H01L21/02071 ,  H01L21/28079 ,  H01L21/32134 ,  H01L29/4908 ,  H01L29/66757 ,  Y10S148/051

摘要： A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.

摘要翻译： 根据本发明的薄膜晶体管具有包括高纯度超过99.5％的低铝层的下电极和含有超过0.5％硅的上层铝的栅电极。 或者，其具有通过将IIIa族元素添加到IIIb族元素而制成的栅电极。 通过蚀刻含硅铝栅电极产生的残留物用氢氟酸，硝酸和乙酸的混合溶液进行蚀刻。 在层间绝缘膜中形成接触孔之后，进行激光退火，此后在接触孔中形成金属电极。

公开(公告)号：US5561081A

公开(公告)日：1996-10-01

申请号：US190846

申请日：1994-02-03

申请人： Akira Takenouchi ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Hongyong Zhang ,  Shunpei Yamazaki

发明人： Akira Takenouchi ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Hongyong Zhang ,  Shunpei Yamazaki

IPC分类号： H01L21/265 ,  B23K26/073 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L21/306

CPC分类号： H01L29/66757 ,  B23K26/0738 ,  Y10S117/904

摘要： An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.

摘要翻译： 描述了在玻璃基板上形成半导体器件的改进方法。 该方法包括在玻璃基板上形成半导体膜，通过加热器将半导体膜加热到预定温度，在通过加热步骤将半导体膜加热到预定温度之后将半导体膜暴露于脉冲激光。 由于预热步骤而导致的急剧的温度变化导致的热冲击减轻。 脉冲激光的宽度大于垂直于长度的横截面时的高度。

公开(公告)号：US5533040A

公开(公告)日：1996-07-02

申请号：US138066

申请日：1993-10-20

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： B23K26/06 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01S5/20 ,  H01S3/10

CPC分类号： H01L21/3105 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01S3/005 ,  H01S3/10038 ,  H01S3/104 ,  H01S3/2256 ,  H01S3/2316 ,  H01S3/2383

摘要： Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize the processing. To achieve a pulse width exceeding 30 nsec, plural lasers are connected in series or in parallel and excited successively.

公开(公告)号：US5481121A

公开(公告)日：1996-01-02

申请号：US248682

申请日：1994-05-25

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L23/544 ,  H01L27/01 ,  H01L29/167

CPC分类号： H01L21/2022 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/78675 ,  G02F1/13454

摘要： Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film crystal-grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the crystalline silicon film crystal-grown in the direction vertical to the flow of carriers can be obtained.

摘要翻译： 将镍引入到非晶硅膜上的外围电路部分和像素部分以使它们结晶。 在形成栅电极等之后，通过掺杂杂质形成源极，漏极和沟道，并且照射激光以改善结晶。 之后，形成电极/电线。 由此，在周边电路部中的薄膜晶体管（TFT）由沿着与载流子流动平行的方向晶体生长的晶体硅膜构成的有源矩阵型液晶显示器，其像素部的TFT由 可以获得在垂直于载流子的方向上晶体生长的晶体硅膜。

公开(公告)号：US5313075A

公开(公告)日：1994-05-17

申请号：US44883

申请日：1993-04-09

申请人： Hongyong Zhang ,  Shunpei Yamazaki

发明人： Hongyong Zhang ,  Shunpei Yamazaki

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L27/01

CPC分类号： H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  Y10S148/118

摘要： A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

摘要翻译： 公开了一种栅极绝缘薄膜晶体管。 一个改进是薄膜晶体管通过其间的阻挡层形成在衬底上，使得可以防止晶体管被存在于衬底中的诸如碱离子的杂质污染。 此外，为阻止层和晶体管的栅极绝缘体中的任一个或两者添加卤素，以便可以中和诸如碱性离子，悬挂键等的杂质，因此提高了器件的可靠性。

公开(公告)号：US5210050A

公开(公告)日：1993-05-11

申请号：US774852

申请日：1991-10-11

申请人： Shunpei Yamazaki ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Hongyong Zhang

IPC分类号： H01L29/786

CPC分类号： H01L29/78675

摘要： A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diameter of 30 .ANG. to 4 .mu.m as viewed from the upper surface of said semiconductor film and contains oxygen impurity and concentration of said oxygen impurity is not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 at an inside position of said semiconductor film. Also is disclosed a method for fabricating semiconductor devices mentioned hereinbefore, which comprises depositing an amorphous semiconductor film containing oxygen impurity at a concentration not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 by sputtering from a semiconductor target containing oxygen impurity at a concentration not higher than 5.times.10.sup.18 atoms.multidot.cm.sup.-3 in an atmosphere comprising hydrogen at not less than 10% in terms of partial pressure; and crystallizing said amorphous semiconductor film at a temperature of from 450.degree. C. to 700.degree. C.

摘要翻译： 公开了至少具有微晶结构的半导体膜的高质量的半导体器件，其中所述半导体膜在其中具有晶格畸变，并且从所述半导体膜的上表面观察，平均直径为30至4μm的晶粒 并且在所述半导体膜的内部位置含有氧杂质且所述氧杂质的浓度不高于7×10 19 atoms×cm -3。 还公开了一种用于制造上述半导体器件的方法，其包括通过溅射从含有氧浓度不高于5×1018原子×cm -3的氧杂质的半导体靶沉积含有浓度不高于7×1019原子×cm -3的氧杂质的非晶半导体膜， 3在包含不低于分压10％的氢的气氛中; 并在450℃至700℃的温度下使所述非晶半导体膜结晶。

公开(公告)号：US20140248633A1

公开(公告)日：2014-09-04

申请号：US14130909

申请日：2012-07-09

申请人： Chong-xian Pan ,  Hongyong Zhang

发明人： Chong-xian Pan ,  Hongyong Zhang

IPC分类号： C07K7/06 ,  G01N33/574

CPC分类号： C07K7/06 ,  A61K47/62 ,  A61K47/6907 ,  A61K51/08 ,  C07K2319/30 ,  G01N33/57426 ,  G01N2333/7056

摘要： The present invention is directed to C-type lectin-like molecule-1 (CLL1) specific ligand peptides, comprising the amino acid motif LR(S/T), and methods of their use, e.g., for imaging detection for diagnosis of leukemia and the presence of leukemic stem cells (LSCs) and targeted therapy against leukemia mediated at least in part by CLL1-expressing LSCs.

摘要翻译： 本发明涉及包含氨基酸基序LR（S / T）的C型凝集素样分子-1（CLL1）特异性配体肽及其使用方法，例如用于诊断白血病的成像检测和 白细胞干细胞（LSCs）的存在和至少部分由CLL1表达的LSCs介导的针对白血病的靶向治疗。

公开(公告)号：US08536577B2

公开(公告)日：2013-09-17

申请号：US13587958

申请日：2012-08-17

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F1/136209 ,  G02F1/136213

摘要： The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

公开(公告)号：US08283788B2

公开(公告)日：2012-10-09

申请号：US12883526

申请日：2010-09-16

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： H01L23/48

CPC分类号： H01L29/66757 ,  H01L21/31111 ,  H01L21/76804

摘要： Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to widen the contact holes. Thus, tapering section are obtained, and the covering of connection wiring is improved.

摘要翻译： 制造与连接电极的接触变得可靠的薄膜晶体管的制造方法。 当形成接触孔时，对底部绝缘层进行湿蚀刻处理，从而在接触孔内产生底切。 为了去除底切，进行光蚀刻工艺以加宽接触孔。 因此，获得了锥形部分，并且改善了连接布线的覆盖。

公开(公告)号：US08198683B2

公开(公告)日：2012-06-12

申请号：US12958739

申请日：2010-12-02

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。