公开(公告)号：US20070231523A1

公开(公告)日：2007-10-04

申请号：US11727888

申请日：2007-03-28

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Jiro Yamanaka ,  Kengo Iwahara ,  Kouji Fukae

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Jiro Yamanaka ,  Kengo Iwahara ,  Kouji Fukae

IPC分类号： B32B1/08

CPC分类号： B32B1/08 ,  B29K2027/12 ,  B29K2995/0067 ,  B29L2023/005 ,  B32B27/08 ,  B32B27/304 ,  B32B27/322 ,  B32B27/34 ,  B32B2307/7244 ,  B32B2597/00 ,  C08L27/16 ,  Y10T428/139 ,  Y10T428/1393 ,  C08L2666/04

摘要： In a resin pipe, PVDF being a fluororesin is softened by adding a perfluoromonomer thereto, so that the oxygen permeability can be significantly reduced. The oxygen permeability can also be reduced by providing a nylon tube as an outer layer.

摘要翻译： 在树脂管中，作为氟树脂的PVDF通过向其中加入全氟单体而软化，从而可以显着降低透氧性。 也可以通过提供尼龙管作为外层来降低透氧性。

公开(公告)号：US20070227567A1

公开(公告)日：2007-10-04

申请号：US11631671

申请日：2005-07-11

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hirohisa Kikuyama ,  Keiichi Nii ,  Masashi Yamamoto

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hirohisa Kikuyama ,  Keiichi Nii ,  Masashi Yamamoto

IPC分类号： B08B3/00 ,  C11D9/44 ,  H01L21/302

CPC分类号： H01L21/02063

摘要： Disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface and enables to form a clean and flat semiconductor surface. Also disclosed are a processing method and an apparatus for manufacturing a semiconductor. Specifically disclosed is a process liquid-which causes only little dissolution of atoms from a semiconductor surface by using an aqueous solution containing at least one alcohol or ketone, thereby realizing a clean and flat surface.

摘要翻译： 公开了一种处理液体，其仅使半导体表面的原子几乎不溶解，并且能够形成清洁且平坦的半导体表面。 还公开了一种用于制造半导体的处理方法和装置。 具体公开了一种处理液体，其通过使用含有至少一种醇或酮的水溶液使半导体表面的原子几乎不溶解，从而实现清洁和平坦的表面。

公开(公告)号：US20060214224A1

公开(公告)日：2006-09-28

申请号：US10553416

申请日：2004-04-13

申请人： Tadahiro Ohmi ,  Akinobu Teramoto

发明人： Tadahiro Ohmi ,  Akinobu Teramoto

IPC分类号： H01L27/12

CPC分类号： H01L21/049

摘要： A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.

摘要翻译： 一种半导体器件，包括通过等离子体处理设置有绝缘膜的SiC的衬底。 稀有气体被并入绝缘膜中。 优选地，使用氪（Kr），氩（Ar）和氙（Xe）中的至少一种作为稀有气体。 氧气和氪（Kr）的组合是特别优选的。

公开(公告)号：US20060139821A1

公开(公告)日：2006-06-29

申请号：US10560646

申请日：2004-06-11

申请人： Takefumi Nishimuta ,  Hiroshi Miyagi ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto

发明人： Takefumi Nishimuta ,  Hiroshi Miyagi ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto

IPC分类号： H02H9/00

CPC分类号： H03G1/0029 ,  H01L21/823807 ,  H01L21/82385 ,  H01L27/092 ,  H01L29/66795 ,  H03G1/0023 ,  H03G7/00 ,  H03K5/08

摘要： A rectangular parallelepiped p-channel MOS transistor 21 having a height of HB and a width of WB is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the p-channel MOS transistor 21. A source and a drain are formed on both sides of a gate electrode 26 to form a MOS transistor. A differential amplification circuit including MOS transistors 61 and 62 configures a limiter circuit. Thus, the gain of the limiter circuit can be designed large.

摘要翻译： 在硅衬底上形成具有H B高度和W B B的高度的长方体p沟道MOS晶体管21，并且在 p沟道MOS晶体管21的顶表面和侧表面的一部分。 源极和漏极形成在栅电极26的两侧以形成MOS晶体管。 包括MOS晶体管61和62的差分放大电路配置限幅器电路。 因此，限制电路的增益可以设计得很大。

公开(公告)号：US20060138538A1

公开(公告)日：2006-06-29

申请号：US11285772

申请日：2005-11-22

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii ,  Takanori Watanabe

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii ,  Takanori Watanabe

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

摘要翻译： 在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。

公开(公告)号：US09105450B2

公开(公告)日：2015-08-11

申请号：US13145398

申请日：2009-11-02

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/32238 ,  H05H1/46 ,  H05H2001/4622

摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

摘要翻译： 微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。 同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

公开(公告)号：US20140186162A1

公开(公告)日：2014-07-03

申请号：US14131299

申请日：2012-06-27

申请人： Masamichi Iwaki ,  Tadahiro Ohmi ,  Kenji Ohyama ,  Isao Akutsu ,  Hajime Iizuka

发明人： Masamichi Iwaki ,  Tadahiro Ohmi ,  Kenji Ohyama ,  Isao Akutsu ,  Hajime Iizuka

IPC分类号： F01D5/02

CPC分类号： F01D5/02 ,  F04C18/16 ,  F04C25/02 ,  F04C27/009 ,  F04C29/023 ,  F04C2220/30 ,  F04C2230/91 ,  Y10T29/49236

摘要： In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.

摘要翻译： 在排气泵中，设置有能够确保安全旋转的旋转机构，能够大幅度减少密封气体的使用。 本发明的旋转机构由旋转轴和密封壳构成。 在旋转轴和密封壳体之间，提供预定间隙。 在旋转轴的外表面和密封壳体的内表面中的至少一个上，设置有PFA膜。 对于至少一个旋转轴和密封壳体的表面上的PFA膜，在用PFA涂覆之后，旋转机构构件的壁表面至少限定间隙，然后熔融和重熔过程，PFA膜是 形成在其自由表面上具有高平滑度。

公开(公告)号：US08714188B2

公开(公告)日：2014-05-06

申请号：US13239715

申请日：2011-09-22

申请人： Tadahiro Ohmi ,  Kouji Nishino ,  Masaaki Nagase ,  Ryousuke Dohi ,  Nobukazu Ikeda ,  Ryutaro Nishimura

发明人： Tadahiro Ohmi ,  Kouji Nishino ,  Masaaki Nagase ,  Ryousuke Dohi ,  Nobukazu Ikeda ,  Ryutaro Nishimura

IPC分类号： G05D7/06

CPC分类号： F16K47/02 ,  Y10T137/0324 ,  Y10T137/0396 ,  Y10T137/7761 ,  Y10T137/7762 ,  Y10T137/7842 ,  Y10T137/86389 ,  Y10T137/86397 ,  Y10T137/86461

摘要： The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.

摘要翻译： 无水锤打开装置包括安装在流体通道上的致动器操作型阀，向上述致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置，可拆卸地固定到 在致动器操作型阀的上游侧的管道通道和输入了由振动传感器检测到的振动检测信号Pr的调谐箱，通过该调谐箱控制控制信号Sc以控制前述的操作压力Ps' 将上述的2步执行器工作压力Pa输出到电动气动变换装置，将使振动检测信号Pr接近零的阶梯操作压力Ps'的2级致动器工作压力Pa'从 通过调节控制信号Sc进行电 - 气转换。

公开(公告)号：US08551830B2

公开(公告)日：2013-10-08

申请号：US12110800

申请日：2008-04-28

申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。

公开(公告)号：US20130140700A1

公开(公告)日：2013-06-06

申请号：US13814950

申请日：2011-08-04

申请人： Tadahiro Ohmi

发明人： Tadahiro Ohmi

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/76843 ,  H01L21/76898 ,  H01L25/0657 ,  H01L2224/16

摘要： Provided is a method of manufacturing a TSV structure, which prevents a substrate from warping even if it is made thin. A method of manufacturing a semiconductor device comprises integrating semiconductor elements on a surface of a semiconductor substrate to form at least a part of a circuit, forming holes from the surface of the semiconductor substrate, forming an insulating film and a barrier film on an inner surface of each hole, forming a conductive metal on a surface of the barrier film to fill each hole, processing a back surface of the semiconductor substrate to reduce the thickness thereof to thereby protrude the conductive metal, and providing a SiCN film on the back surface of the semiconductor substrate.

摘要翻译： 提供一种制造TSV结构的方法，即使其变薄，也可防止基板翘曲。 一种制造半导体器件的方法包括：在半导体衬底的表面上集成半导体元件以形成电路的至少一部分，从半导体衬底的表面形成空穴，在内表面上形成绝缘膜和阻挡膜 的每个孔，在阻挡膜的表面上形成导电金属以填充每个孔，处理半导体衬底的背面以减小其厚度，从而突出导电金属，并在导电金属的背面提供SiCN膜 半导体衬底。